公开(公告)号：KR1020120020553A

公开(公告)日：2012-03-08

申请号：KR1020100084224

申请日：2010-08-30

Applicant: 삼성전자주식회사

Inventor： 이호진 ,  장동현 ,  송호건 ,  정세영 ,  윤민승 ,  김정환

IPC: H01L21/60 ,  H01L23/12 ,  H01L23/48

CPC classification number: H01L21/76898

Abstract: PURPOSE: A semiconductor chip and a method for forming a semiconductor chip are provided to uniformly maintain the thickness of a semiconductor chip by etching the back side of a semiconductor chip by using an insulating layer included in the substrate as an etch stopping layer. CONSTITUTION: A semiconductor layer(105) has an active surface(10) and an non-active layer(20) which face each other. A first inter layer dielectric layer(110) is formed on the active surface of the semiconductor layer. An insulating layer(103) is arranged on the non-active layer of the semiconductor layer. A through hole(115) successively passes through the first inter layer dielectric layer, the semiconductor layer, and the insulating layer. A spacer(125) is interposed between the inner wall of the hole and a through electrode.

Abstract translation: 目的：提供一种半导体芯片和半导体芯片的形成方法，通过使用包含在基板中的绝缘层作为蚀刻停止层，通过蚀刻半导体芯片的背面来均匀地保持半导体芯片的厚度。 构成：半导体层（105）具有彼此面对的有源表面（10）和非有源层（20）。 在半导体层的有源表面上形成第一层间介电层（110）。 绝缘层（103）布置在半导体层的非有源层上。 通孔115依次通过第一层间介电层，半导体层和绝缘层。 间隔物（125）插入在孔的内壁和贯通电极之间。

公开(公告)号：KR1020120010616A

公开(公告)日：2012-02-06

申请号：KR1020100070471

申请日：2010-07-21

Applicant: 삼성전자주식회사

Inventor： 이충선 ,  김정환 ,  임윤혁 ,  황지환 ,  김현철 ,  최광철 ,  최은경 ,  민태홍

IPC: H01L23/00 ,  H01L23/29 ,  H01L25/065 ,  H01L25/10

CPC classification number: H01L25/0657 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0655 ,  H01L25/105 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2225/1094 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01087 ,  H01L2924/09701 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L23/29 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: PURPOSE: A stack package, a semiconductor package and a method of manufacturing the stack package are provided to improve the heat dissipation property of a stack package by using a support member as a heat discharging path. CONSTITUTION: A first semiconductor chip(100) comprises a semiconductor layer(110), a wiring layer(120), a connection bump(130), and a penetrating electrode(140). A second semiconductor chip(200) is laminated in the top side of the first semiconductor chip. The second semiconductor chip comprises a semiconductor layer(210), a wiring layer(220), and a micro connection bump(230). A supporting member(310) is attached to the top side of the first semiconductor chip through an adhesive layer. A molding member(330) covers the first semiconductor chip to cover the second semiconductor chip and the supporting member.

Abstract translation: 目的：提供堆叠封装，半导体封装和制造叠层封装的方法，以通过使用支撑构件作为放热路径来提高堆叠封装的散热性能。 构成：第一半导体芯片（100）包括半导体层（110），布线层（120），连接凸块（130）和穿透电极（140）。 第二半导体芯片（200）层压在第一半导体芯片的顶侧。 第二半导体芯片包括半导体层（210），布线层（220）和微连接凸块（230）。 支撑构件（310）通过粘合剂层附接到第一半导体芯片的顶侧。 模制构件（330）覆盖第一半导体芯片以覆盖第二半导体芯片和支撑构件。

公开(公告)号：KR1020110108136A

公开(公告)日：2011-10-05

申请号：KR1020100027467

申请日：2010-03-26

Applicant: 삼성전자주식회사

Inventor： 김동한 ,  박성우 ,  박진우 ,  임소영 ,  김정환 ,  배광진 ,  이파란

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  H01L21/683 ,  H01L25/065 ,  H01L25/10

CPC classification number: H01L25/105 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L29/0657 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/05171 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48235 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73277 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

Abstract: 반도체 하우징 패키지를 제공할 수 있다. 상기 반도체 하우징 패키지는 몰드막, 하우징 칩, 재배선 패턴 및 하우징 단자를 포함할 수 있다. 상기 몰드막은 하우징 칩을 감싸면서 하우징 칩을 부분적으로 노출시킬 수 있다. 상기 재배선 패턴은 하우징 칩과 전기적으로 접속하면서 몰드막 상에 배치될 수 있다. 상기 하우징 단자는 재배선 패턴과 접촉할 수 있다. 상기 반도체 하우징 패키지는 반도체 베이스 패키지 상에 위치하면서 반도체 베이스 패키지와 함께 반도체 패키지 구조물을 구성할 수 있다. 상기 반도체 패키지 구조물은 프로세서 베이스드 시스템에 배치될 수 있다.

Abstract translation: 可以提供半导体外壳封装。 半导体外壳封装可以包括模具层，壳体芯片，再分布结构和壳体节点。 模具层可围绕并部分地暴露外壳芯片。 再分布结构可以电连接到壳体芯片并且可以设置在模具层上。 壳体节点可以与再分布结构接触。 半导体外壳封装可以设置在半导体基底封装上，并且可以与半导体基底封装构成半导体封装结构。 半导体封装结构可以设置在基于处理器的系统上。

公开(公告)号：KR1020100011212A

公开(公告)日：2010-02-03

申请号：KR1020080072334

申请日：2008-07-24

Applicant: 삼성전자주식회사

Inventor： 김정환 ,  남궁현 ,  임헌형 ,  임한진 ,  이우성

IPC: H01L21/336 ,  H01L29/78

CPC classification number: H01L27/11531 ,  H01L21/28273 ,  H01L29/66825

Abstract: PURPOSE: A method of forming a gate in a semiconductor device are provided to reduce equivalent oxide thickness easily by implanting nitride on the sidewall of exposed oxide pattern after forming gate structure. CONSTITUTION: An oxide film(102b), a conductive film(104a), a hard mask layer(108a) are successively formed on a substrate(100) which is classified into a first and a second part. A photoresist pattern for selectively forming the gate electrode on the first area is formed. A hard mask layer, the conductive film, and oxide film are etched by using the photoresist pattern. A preliminary gate structure consisting of a preliminary oxidation film pattern, a conductive pattern, and hard mask is formed. The process of implanting the nitrogen into the sidewall of the preliminary oxidation film pattern is performed. The gate structure(112a) including the oxide film pattern reducing the effective oxide film thickness is formed.

Abstract translation: 目的：提供一种在半导体器件中形成栅极的方法，以在形成栅极结构之后，通过在暴露的氧化物图案的侧壁上注入氮化物来容易地降低等效的氧化物厚度。 构成：在被分类为第一部分和第二部分的基板（100）上依次形成氧化膜（102b），导电膜（104a），硬掩模层（108a）。 形成用于在第一区域上选择性地形成栅电极的光刻胶图形。 通过使用光致抗蚀剂图案来蚀刻硬掩模层，导电膜和氧化物膜。 形成由预氧化膜图案，导电图案和硬掩模构成的初步栅极结构。 执行将氮气注入预氧化膜图案的侧壁的过程。 形成包括减小有效氧化膜厚度的氧化膜图案的栅极结构（112a）。

公开(公告)号：KR1020090105452A

公开(公告)日：2009-10-07

申请号：KR1020080030906

申请日：2008-04-02

Applicant: 삼성전자주식회사

Inventor： 임헌형 ,  이상훈 ,  남석우 ,  임한진 ,  나기수 ,  이우성 ,  김정환 ,  김용석

IPC: H01L27/115 ,  H01L21/8247 ,  H01L21/20

CPC classification number: H01L21/0226 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/66825

Abstract: PURPOSE: A method for forming a polysilicon layer and a method for manufacturing a nonvolatile memory device using the same are provided to form the polysilicon layer with a smooth surface and a small grain by vertically injecting the deposition gas and the inert gas to the upper side of the substrate in a single chamber. CONSTITUTION: A substrate(10) is loaded in a single chamber. A polysilicon layer(12) is deposited by injecting the deposition gas and the inert gas to a vertical direction to an upper side of the loaded substrate. The pressure of the chamber is 1 to 200Torr.

Abstract translation: 目的：提供一种形成多晶硅层的方法以及使用其制造非易失性存储器件的方法，以通过将沉积气体和惰性气体垂直注入上侧来形成具有光滑表面和小颗粒的多晶硅层 的单个腔室中的衬底。 构成：衬底（10）装载在单个腔室中。 通过将沉积气体和惰性气体沿垂直方向注入到所加载的衬底的上侧来沉积多晶硅层（12）。 室的压力为1至200Torr。

公开(公告)号：KR1020090035938A

公开(公告)日：2009-04-13

申请号：KR1020070100987

申请日：2007-10-08

Applicant: 삼성전자주식회사

Inventor： 김정환 ,  안성준 ,  김영봉 ,  서영일 ,  박찬호

IPC: G06F9/06 ,  G06F3/06

CPC classification number: G06F3/0643 ,  G06F3/0613 ,  G06F3/064 ,  G06F3/068

Abstract: An apparatus and a method for disk defragment in a hybrid hard disk are provided to improve the performance of disk defragment without changing the structure of a hybrid disk by using a non-volatile memory embedded in the hybrid disk. A non-volatile memory(310) exists in a hybrid disk, and a loading unit(320) reads out the data of fragmented cluster and stores the data at the non-volatile memory temporarily. The loading unit reads out the data temporarily stored at the non-volatile memory and transfers the data to a recording unit(330). A recording unit records the temporarily stored data to a continuous cluster, and the recording records the data temporarily stored at the non-volatile memory at one time.

Abstract translation: 提供了一种用于混合硬盘中的磁盘碎片整理的装置和方法，以通过使用嵌入在混合磁盘中的非易失性存储器来改变磁盘碎片整理的性能而不改变混合磁盘的结构。 非易失性存储器（310）存在于混合盘中，并且加载单元（320）读出分散簇的数据，并将该数据临时存储在非易失性存储器中。 加载单元读出临时存储在非易失性存储器中的数据，并将数据传送到记录单元（330）。 记录单元将临时存储的数据记录到连续的集群，并且记录一次记录临时存储在非易失性存储器中的数据。

公开(公告)号：KR1020090032821A

公开(公告)日：2009-04-01

申请号：KR1020070098360

申请日：2007-09-28

Applicant: 삼성전자주식회사

Inventor： 안성준 ,  이형규 ,  김정환 ,  김영봉 ,  김신 ,  서영일 ,  박찬호

IPC: G11B20/10 ,  G11B20/12 ,  H04N5/765

CPC classification number: G06F12/0862 ,  G06F12/0866 ,  G06F12/0897 ,  G06F2212/221 ,  G06F2212/222

Abstract: A pre-fetching method of a hard disk drive, and a recording medium and an apparatus suitable for the same are provided to perform effective pre-fetch even when an external device makes a request of random type, by using the nonvolatile cache management message of the external device. A pre-fetching method of a hard disk drive comprises a step of searching whether the logical block address of data requested from an external device is stored in the history of a nonvolatile cache(102), and a step of storing data recorded in the logical block address stored next to the logical block address of the requested data in a buffer when the logical block address of the requested data is stored in the history(107).

Abstract translation: 提供硬盘驱动器的预取方法以及适用于其的装置的记录介质和装置，以便即使当外部设备进行随机类型的请求时，也可以通过使用非易失性高速缓存管理消息来执行有效的预取 外部设备。 硬盘驱动器的预取方法包括以下步骤：搜索从外部设备请求的数据的逻辑块地址是否存储在非易失性高速缓存（102）的历史中;以及步骤，存储记录在逻辑 当所请求的数据的逻辑块地址被存储在历史（107）中时，缓冲器中存储在所请求数据的逻辑块地址旁边的块地址。

公开(公告)号：KR1020080011582A

公开(公告)日：2008-02-05

申请号：KR1020060072314

申请日：2006-07-31

Applicant: 삼성전자주식회사

Inventor： 추현진 ,  김정환

IPC: B41J2/175 ,  B41J29/38

CPC classification number: B41J2/145 ,  B41J2/14153 ,  B41J25/001

Abstract: A head chip alignment sensing method for an array head of an inkjet printer is provided to control overlapped nozzles for compensating for overlapped regions of head chips. A head chip alignment sensing method for an array head of an inkjet printer comprises the steps of: discharging ink from overlapped nozzles of respective head chips and forming a plurality of image lines, scanning the image lines, calculating at least one of the thickness of the scanned image lines and the interval between the adjacent image lines, and determining an alignment state of the head chip using the calculation result.

Abstract translation: 提供一种用于喷墨打印机的阵列头的头芯片对准检测方法，以控制用于补偿头部芯片的重叠区域的重叠喷嘴。 一种用于喷墨打印机的阵列头的头芯片对准检测方法，包括以下步骤：从相应的头芯片的重叠喷嘴排出墨，并形成多个图像线，扫描图像线，计算图像的厚度中的至少一个 扫描图像线和相邻图像线之间的间隔，以及使用计算结果确定头部芯片的对准状态。

公开(公告)号：KR1020080008308A

公开(公告)日：2008-01-23

申请号：KR1020070133586

申请日：2007-12-18

Applicant: 삼성전자주식회사

Inventor： 오상미 ,  김정환

IPC: B41J2/01 ,  B41J2/135 ,  B41J2/05

Abstract: A scanning-type inkjet image forming apparatus is provided to improve printed image quality by preventing printing areas from being overlapped by adjacent nozzles. A scanning-type inkjet image forming apparatus comprises a nozzle group(NG) consisting of N nozzles, a print head(111) having at least one nozzle group, a driving unit(150) driving the N nozzles and printing an image, and a control unit(130) generating a control signal for driving the driving unit so as to perform time-division driving of the nozzles of the nozzle group and the N nozzles divided into M blocks. The control unit sequentially drives the nozzles of the nozzle group and then drives the nozzles of the M blocks, where a driving order for the nozzle group and a driving order for the M blocks are the same in direction, and N and M are an integer of 2 or more.

Abstract translation: 提供扫描型喷墨图像形成装置，以通过防止打印区域与相邻喷嘴重叠来提高打印图像质量。 扫描型喷墨图像形成装置包括由N个喷嘴构成的喷嘴组（NG），具有至少一个喷嘴组的打印头（111），驱动N个喷嘴的驱动单元（150）和打印图像;以及 控制单元（130）产生用于驱动驱动单元的控制信号，以便执行喷嘴组的喷嘴和分成M个块的N个喷嘴的时分驱动。 控制单元顺序地驱动喷嘴组的喷嘴，然后驱动M块的喷嘴，其中喷嘴组的驱动顺序和M块的驱动顺序在方向上相同，并且N和M是整数 为2以上。

公开(公告)号：KR100670040B1

公开(公告)日：2007-12-11

申请号：KR1019980030122

申请日：1998-07-27

Applicant: 삼성전자주식회사

Inventor： 김정환

IPC: G09G3/36

Abstract: 이 발명은 박막 트랜지스터 액정 표시 장치에 관한 것으로, 타이밍 제너레이터는 외부로부터 적녹청 데이터, 수평 및 수직 동기 신호, 데이터 인에이블 신호 및 메인 클럭 신호를 입력받아 데이터의 표시를 위한 제어신호를 출력한다. 게이트 구동부는 타이밍 컨트롤러로부터의 제어 신호에 따라 게이트 구동 신호를 출력한다. 데이터 구동부는 타이밍 컨트롤러로부터의 제어신호에 따라 상기 적녹청 데이터에 해당하는 전압을 게이트 구동전압이 인가되는 부분에서의 거리에 비례하여 지연하여 출력한다. 패널은 게이트 구동부의 게이트 구동 신호에 따라 상기 데이터 구동부로부터 출력되는 적녹청 데이터에 해당하는 전압을 화면에 표시한다.