-
公开(公告)号：KR1020130123919A
公开(公告)日：2013-11-13
申请号：KR1020120047440
申请日：2012-05-04
Applicant: 한국화학연구원
CPC classification number: C07F3/00 , C23C16/409 , C23C16/45525
Abstract: The present invention relates to a strontium precursor which is represented by chemical formula 1, is thermally stable, and has good volatility, thereby easily forming a thin film including good quality strontium. In chemical formula 1, each of R1, R2, R3, R4, and R5 is independently H or a C1-C10 linear or branched alkyl group; each of R6 and R7 is independently a C1-C10 linear or branched alkyl group or a C1-C10 alkyl fluoride group.
Abstract translation: 本发明涉及由化学式1表示的锶前体，其热稳定性良好，挥发性良好，容易形成包含质量好的锶的薄膜。 在化学式1中，R 1，R 2，R 3，R 4和R 5各自独立地为H或C 1 -C 10直链或支链烷基; R6和R7各自独立地为C1-C10直链或支链烷基或C1-C10烷基氟基团。
-
公开(公告)号：KR1020130123918A
公开(公告)日：2013-11-13
申请号：KR1020120047439
申请日：2012-05-04
Applicant: 한국화학연구원
CPC classification number: C07F3/003 , C23C16/409 , C23C16/45525
Abstract: The present invention relates to a strontium precursor which is represented by chemical formula 1, is thermally stable, and has good volatility, thereby easily forming a thin film including good quality strontium. In chemical formula 1, each of R1, R2, and R3 is independently H or a C1-C10 linear or branched alkyl group; each of R4, R5, R6, and R7 is independently a C1-C10 linear or branched alkyl group or a C1-C10 alkyl fluoride group; and each of m and n is 1-3.
Abstract translation: 本发明涉及由化学式1表示的锶前体，其热稳定性良好，挥发性良好，容易形成包含质量好的锶的薄膜。 在化学式1中，R 1，R 2和R 3各自独立地为H或C 1 -C 10直链或支链烷基; R4，R5，R6和R7各自独立地为C1-C10直链或支链烷基或C1-C10烷基氟基团; m和n分别为1-3。
-
公开(公告)号：KR101306813B1
公开(公告)日：2013-09-10
申请号：KR1020120049235
申请日：2012-05-09
Applicant: 한국화학연구원
CPC classification number: C07F11/00 , C23C16/18 , C23C16/45553
Abstract: PURPOSE: A novel tungsten aminoamide azide compound is thermally stable and highly volatile, so that the novel tungsten aminoamide azide compound can be used in producing a thin film including quality tungsten. CONSTITUTION: A novel tungsten aminoamide azide compound is indicated as the chemical formula 1. A preparation method of the novel tungsten aminoamide azide compound indicated as the chemical formula 1 comprises a step of generating the reaction of a compound represented by the chemical formula 2 and a compound represented by the chemical formula 3. A method for growing a thin film containing tungsten by using the novel tungsten aminoamide azide compound is provided. The film growth process is performed by the chemical vapor deposition (CVD) method or the atomic layer deposition (ALD) method.
Abstract translation: 目的：新型钨氨基酰胺叠氮化合物具有热稳定性和高挥发性，因此新型钨氨基酰胺叠氮化合物可用于生产包含优质钨的薄膜。 构成：化学式1表示新的钨氨基酰胺叠氮化合物。作为化学式1表示的新型氨基酰胺叠氮化合物的制备方法，包括产生由化学式2表示的化合物与 化学式3表示的化合物。提供了使用新的氨基酰胺叠氮化合物生长含钨的薄膜的方法。 通过化学气相沉积（CVD）方法或原子层沉积（ALD）方法进行膜生长过程。
-
公开(公告)号：KR101242772B1
公开(公告)日：2013-03-12
申请号：KR1020110000493
申请日：2011-01-04
Applicant: 한국화학연구원
Abstract: 본 발명은 하기 화학식 1로 표시되는 아미노 알콕사이드 리간드를 갖는 신규의 비스무트 아미노 알콕사이드 화합물 및 그 제조 방법에 관한 것이다.
[화학식 1]
Bi[OA-NR
1 R
2 ]
3
[상기 화학식 1에서, A는 C
2 -C
5 의 알킬렌이고; 상기 A는 하나 이상의 C
1 -C
10 의 선형 또는 분지형 알킬기로 더 치환될 수 있고; R
1 및 R
2 는 서로 독립적으로 C
1 -C
10 의 선형 또는 분지형 알킬기이다.]
본 발명에 따르는 비스무트 아미노 알콕사이드 화합물은 비스무트 전구체로서 상온에서 고체 상태로 존재하며 증기압이 매우 높아 비스무트를 포함하는 물질의 박막의 증착 또는 여러 가지 합금 증착에 비스무트 원료 물질로 유용하게 사용될 수 있다.-
公开(公告)号：KR1020120121194A
公开(公告)日：2012-11-05
申请号：KR1020110039028
申请日：2011-04-26
Applicant: 한국화학연구원
CPC classification number: C07F9/902 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel antimony aminoalkoxide compound is provided to bind with oxygen ligand and to manufacture a thin film containing the antimony and to ensure excellent thermal stability and volatility. CONSTITUTION: An antimony aminoalkoxide compound is denoted by chemical formula 1(Sb[O-A-NR1R2]3). A compound of chemical formula 1 is denoted by chemical formula 2(Sb[O-CR3R4(CH2)m-NR1R2]3). A method for preparing the antimony amino alkoxide compounds comprises a step of reacting antimony halide compounds of chemical formula 3(SbX3) and alcohol alkali metal salt of chemical formula 4(M[O-A-NR1R2]). A method for forming a thin film comprises a step of forming a thin film containing antimony using an antimony amino alkoxide compounds as a precursor.
Abstract translation: 目的：提供新型的锑氨基烷氧基化合物与氧配位体结合并制造含有锑的薄膜，并确保优异的热稳定性和挥发性。 构成：化学式1（Sb [O-A-NR1R2] 3）表示锑氨基烷氧基化合物。 化学式1的化合物由化学式2（Sb [O-CR 3 R 4（CH 2）m -NR 1 R 2] 3）表示。 制备锑氨基醇盐化合物的方法包括使化学式3（SbX 3）的卤化锑化合物与化学式4的醇碱金属盐（M [O-A-NR1R2]）反应的步骤。 形成薄膜的方法包括使用锑氨基醇盐化合物作为前体形成含有锑的薄膜的步骤。
-
Patent Agency Ranking
公开(公告)号：KR1020120058762A
公开(公告)日：2012-06-08
申请号：KR1020100120197
申请日：2010-11-30
Applicant: 한국화학연구원
IPC: C07F9/00 , C07C211/65 , C23C16/40
CPC classification number: C07F9/00 , C23C16/405 , C23C16/45525
Abstract: PURPOSE: A tantalic compound and a method for preparing the same are provided to ensure excellent thermal stability and volatility. CONSTITUTION: A tantalic compound is denoted by chemical formula 1(R1N=Ta[O-A-NR2R3]x[R4]3-x), 2(R1N=Ta[O-CR5R6(CH2)m-NR2R3]x[R11]3-x), or 3(R1N=Ta[O-CR5R6(CH2)m-NR2R3]x[R12]3-x). The tantalic compound is Ta(NtBu)(OCMe2CH2NMe2)2Cl or Ta(NtBu)(OCMe2CH2NMe2)2Me. A method for preparing the tantanlic compounds comprises a step of reacting tantalic compounds of chemical formula 4(R1N=TaR113Py2) with metal amino alkoxide of chemical formula 5(MO-A-NR2R3).
Abstract translation: 目的：提供钽酸盐化合物及其制备方法以确保优异的热稳定性和挥发性。 构成：化学式1（R1N = Ta [OA-NR2R3] x [R4] 3-x），2（R1N = Ta [O-CR5R6（CH2）m-NR2R3] x [R11] 3 -x）或3（R1N = Ta [O-CR5R6（CH2）m-NR2R3] x [R12] 3-x）。 钽（NtBu）（OCMe2CH2NMe2）2Cl或Ta（NtBu）（OCMe2CH2NMe2）2Me的钽酸盐化合物。 制备钽酸钡化合物的方法包括使化学式4（R1N = TaR113Py2）的钽酸化合物与化学式5的金属氨基醇盐（MO-A-NR2R3）反应的步骤。
-
公开(公告)号：KR102210615B1
公开(公告)日：2021-02-02
申请号：KR1020190014811
申请日：2019-02-08
Applicant: 한국화학연구원
Abstract: 본발명은멀티비트연산을위해최적화된저항스위칭장치의제조방법을공개한다. 이방법은기판상에증착된하부전극의상부에가변저항막이증착되는단계; 및상기가변저항막상부에절연막이증착되고, 상기절연막상부에상부전극이증착되는단계; 를포함하고, 상기절연막은저항스위칭장치의셋 동작시자가전류제한(self-compliance) 전류특성을갖게하는것을특징으로한다. 본발명에의할경우, 하부전극과상부전극사이에절연막이삽입되어동작전류를억제함으로써, current and enlarged operation voltage.고속의멀티비트동작에유리한큰 증분전압스텝조건하에서에너지소비를절감한다. 또한, 저항스위칭장치의고속의멀티비트동작에유리한큰 증분전압스텝조건하에서증분단계펄스프로그래밍(ISPP) / 오류검사및 교정(ECC) 동안, 전류의점진적인변화가목표전류범위를초과하는비정상적인경우의발생빈도수가감소하여평균에너지소비량이절감된다.
-
-
-
公开(公告)号：KR101769338B1
公开(公告)日：2017-08-30
申请号：KR1020150136231
申请日：2015-09-25
Applicant: 한국화학연구원
Abstract: 본발명은전이금속함유전구체, 이의제조방법및 이를이용하여박막을제조하는방법에관한것으로, 본발명에따른전이금속함유전구체는열적안정성과휘발성이개선되어낮은온도에서도쉽게양질의코발트산화물또는망간산화물을포함하는박막의제조가가능하다.
-
-
-
-
-
-
-
-
-
Search Results
143
records
(took 0.02 seconds)
