公开(公告)号：FR2954587A1

公开(公告)日：2011-06-24

申请号：FR0957950

申请日：2009-11-10

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： MARTY MICHEL ,  LEVERD FRANCOIS

IPC: H01L27/146 ,  H01L21/768

Abstract: L'invention concerne un procédé de fabrication d'un capteur d'images éclairé par la face arrière, comprenant les étapes suivantes : (a) former, dans et sur une couche de silicium (14) de type SOI, des composants de capture et de transfert de porteurs photo-générés (24, 26, 27) et des régions d'isolement (28) ; (b) former un empilement de niveaux d'interconnexion (16) sur la couche de silicium (14) et fixer, sur l'empilement d'interconnexion, une poignée semiconductrice (22) ; (c) éliminer le support semiconducteur (10) ; (d) former, dans la couche isolante (12) et la couche de silicium (14), des tranchées (42, 44) atteignant les régions d'isolement ; (e) déposer une couche de silicium amorphe fortement dopée (46) sur les parois et le fond des tranchées et faire cristalliser ladite couche de silicium amorphe (48) ; et (f) remplir les tranchées d'un matériau réfléchissant (50).

公开(公告)号：FR2928490B1

公开(公告)日：2011-04-15

申请号：FR0851494

申请日：2008-03-07

Applicant: ST MICROELECTRONICS SA

Inventor： COUDRAIN PERCEVAL ,  CORONEL PHILIPPE ,  MARTY MICHEL ,  BOPP MATTHIEU

IPC: H01L21/00 ,  H01L31/0232

公开(公告)号：DE60239200D1

公开(公告)日：2011-03-31

申请号：DE60239200

申请日：2002-06-13

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  FORTUIN ARNOUD ,  ARNAL VINCENT

IPC: H01L21/3065 ,  H01L21/316 ,  H01L21/76 ,  H01L21/762 ,  H01L21/764

公开(公告)号：FR2905519B1

公开(公告)日：2008-12-19

申请号：FR0653524

申请日：2006-08-31

Applicant: ST MICROELECTRONICS SA ,  ST MICROELECTRONICS CROLLES 2

Inventor： CORONEL PHILIPPE ,  MARTY MICHEL

IPC: H01L21/8236 ,  H01L27/088

Abstract: A method for manufacturing an integrated circuit containing fully and partially depleted MOS transistors, including the steps of forming similar MOS transistors on a thin silicon layer formed on a silicon-germanium layer resting on a silicon substrate; attaching the upper surface of the structure to a support wafer; eliminating the substrate; depositing a mask and opening this mask at the locations of the fully-depleted transistors; oxidizing the silicon-germanium at the locations of the fully-depleted transistors in conditions such that a condensation phenomenon occurs; and eliminating the oxidized portion and the silicon-germanium portion, whereby there remain transistors with a thinned silicon layer.

公开(公告)号：FR2881273B1

公开(公告)日：2007-05-04

申请号：FR0500674

申请日：2005-01-21

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  AVENIER GREGORY

IPC: H01L21/762 ,  H01L21/84

公开(公告)号：DE69832008D1

公开(公告)日：2005-12-01

申请号：DE69832008

申请日：1998-06-25

Applicant: ST MICROELECTRONICS SA ,  FRANCE TELECOM

Inventor： JAOUEN HERVE ,  MARTY MICHEL

IPC: H01L23/12 ,  H01F17/00 ,  H01L23/64 ,  H01L25/00

公开(公告)号：FR2858877B1

公开(公告)日：2005-10-21

申请号：FR0350418

申请日：2003-08-11

Applicant: ST MICROELECTRONICS SA

Inventor： MARTINET BERTRAND ,  MARTY MICHEL ,  CHEVALIER PASCAL ,  CHANTRE ALAIN

IPC: H01L21/331 ,  H01L29/08 ,  H01L29/737

Abstract: A method for forming a heterojunction bipolar transistor including the steps of: forming in a semiconductor substrate a collector area of a first doping type; growing by epitaxy above a portion of the collector area a silicon/germanium layer of a second doping type forming a base area; forming above the silicon/germanium layer a sacrificial emitter formed of a material selectively etchable with respect to the silicon/germanium layer and with respect to the layers and consecutively-formed insulating spacers; forming first insulating spacers on the sides of the sacrificial emitter; growing by epitaxy a silicon layer above the exposed portions of the silicon/germanium layer; forming second insulating spacers adjacent to the first spacers and laid on the silicon layer; covering the entire structure with an insulating layer; partially removing the insulating layer above the sacrificial emitter and removing the sacrificial emitter; filling the space previously taken up by the sacrificial emitter with a semiconductor material of the first doping type.

公开(公告)号：FR2867610A1

公开(公告)日：2005-09-16

申请号：FR0450483

申请日：2004-03-10

Applicant: ST MICROELECTRONICS SA

Inventor： SAUTREUIL BERNARD ,  MARTY MICHEL ,  BONNOUVRIER JEROME ,  CARPENTIER JEAN FRANCOIS

IPC: H01L21/02 ,  H01L21/329 ,  H01L27/08 ,  H01L29/92 ,  H01L29/93

Abstract: The integral condenser, formed in the upper part of a semiconductor substrate (20) comprising at least one lightly-doped type N semiconductor layer (24) with its upper surface having a highly-doped type P region (35) bounded by an insulation zone (34), has one contact in the form of a metal layer (44) buried immediately beneath the type N semiconductor layer, and at least one vertical metal contact passing through the semiconductor layer as far as the metal layer and reaching the surface of the semiconductor layer outside the type P region. The metal layer and contact are of the same metal, selected from the group comprising tungsten, titanium nitrate, titanium, copper and their alloys. An independent claim is also included for the condenser fabrication process.

公开(公告)号：FR2830984B1

公开(公告)日：2005-02-25

申请号：FR0113375

申请日：2001-10-17

Applicant: ST MICROELECTRONICS SA

Inventor： MARTY MICHEL ,  LEVERD FRANCOIS ,  CORONEL PHILIPPE ,  TORRES JOAQUIM

IPC: H01L21/762 ,  H01L21/764

公开(公告)号：FR2779572B1

公开(公告)日：2003-10-17

申请号：FR9807059

申请日：1998-06-05

Applicant: ST MICROELECTRONICS SA

Inventor： CHANTRE ALAIN ,  MARTY MICHEL ,  DUTARTRE DIDIER ,  MONROY AUGUSTIN ,  LAURENS MICHEL ,  GUETTE FRANCOIS

IPC: H01L21/331 ,  H01L29/08 ,  H01L29/737 ,  H01L29/73 ,  H01L29/732

Abstract: A vertical bipolar transistor production process comprises epitaxy of a single crystal silicon emitter region in direct contact with the upper layer of a silicon germanium heterojunction base. Production of a vertical bipolar transistor comprises (a) forming an intrinsic collector (4) on an extrinsic collector layer buried in a semiconductor substrate (1); (b) forming a lateral insulation region (5) around the upper part of the intrinsic collector and an offset extrinsic collector well (60); (c) forming an silicon germanium heterojunction base above the intrinsic collector (4) and the lateral insulation region (5) by non-selective epitaxy of a multilayer (8) including a silicon germanium layer; and (e) forming an in-situ doped emitter by epitaxy on a window of the surface of the multilayer located above the intrinsic collector to obtain, above the window, a single crystal silicon emitter region in direct contact with the upper layer of the multilayer (8). An Independent claim is also included for a vertical bipolar transistor produced by the above process.