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    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS
    1.
    发明申请
    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS 审中-公开
    使用自组装聚合物的光刻

    公开(公告)号：WO2012031818A2

    公开(公告)日：2012-03-15

    申请号：PCT/EP2011062554

    申请日：2011-07-21

    Applicant: ASML NETHERLANDS BV ,  KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    Inventor： KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    IPC: B81C1/00

    CPC classification number: B44C1/227 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0002 ,  H01L21/0337

    Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

    Abstract translation: 衬底上的光刻方法使用沉积在衬底上的自组装聚合物（SAP）层，其中第一和第二畴以整个层的图案排列。 平坦化层形成在SAP之上，并且显影蚀刻被施加以在第二域上基本上去除平坦化层的一部分，留下平坦化层的盖基本覆盖第一域。 然后通过穿透蚀刻从表面除去未封端的第二结构域，留下封盖的第一结构域作为表面上的图案特征。 然后可以使用转移蚀刻来使用封盖的第一结构域将图案特征转移到衬底。 封盖允许除去第二区域，例如，即使当第一和第二区域之间的耐蚀刻性差异小时，也不会对剩余的第一区域造成横向特征宽度的过度损失。

    IMPRINT LITHOGRAPHY APPARATUS AND METHOD
    2.
    发明申请
    IMPRINT LITHOGRAPHY APPARATUS AND METHOD 审中-公开
    印刷光刻设备和方法

    公开(公告)号：WO2010063504A2

    公开(公告)日：2010-06-10

    申请号：PCT/EP2009062963

    申请日：2009-10-06

    Applicant: ASML NETHERLANDS BV ,  KONINK PHILIPS ELECTRONICS B V ,  VAN DER TEMPEL LEENDERT ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  KRUIJT-STEGEMAN YVONNE ,  LAMMERS JEROEN ,  MUTSAERS CORNELIS

    Inventor： VAN DER TEMPEL LEENDERT ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  KRUIJT-STEGEMAN YVONNE ,  LAMMERS JEROEN ,  MUTSAERS CORNELIS

    IPC: G03F7/00

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: A method of imprint lithography involves the use of a void space in the substrate or imprint template. A gas pocket trapped between an imprint template and an imprintable, flowable medium on the substrate may lead to an irregularity once the imprintable medium has set. A void space allows the gas pocket to dissipate by flow or diffusion of gas into the void space, typically prior to setting the imprintable medium. A layer of solid porous medium as part of the imprint template, for instance as a layer forming or neighbouring the patterning surface of the template, may provide the void space. The void space of the porous layer acts as a void space into which the trapped gas can flow or diffuse. The substrate to be patterned may include a porous layer for the same purpose. A suitable solid porous medium includes a nanoporous silica.

    Abstract translation: 压印光刻的方法涉及在基板或压印模板中使用空隙空间。 一旦可压印介质凝固，被俘获在压印模板和衬底上的可压印的可流动介质之间的气袋可能导致不规则。 通常在设置可压印介质之前，空隙空间允许气穴通过气流或空气扩散进入空隙空间而消散。 作为压印模板的一部分的一层固体多孔介质，例如作为形成或邻近模板的图案化表面的层，可以提供空隙空间。 多孔层的空隙空间充当被捕获的气体可以流入或扩散到其中的空隙空间。 出于相同的目的，待图案化的衬底可以包括多孔层。 合适的固体多孔介质包括纳米多孔二氧化硅。

    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS.
    6.
    发明专利
    LITHOGRAPHY USING SELF-ASSEMBLED POLYMERS. 未知

    公开(公告)号：NL2007161A

    公开(公告)日：2012-03-12

    申请号：NL2007161

    申请日：2011-07-21

    Applicant: ASML NETHERLANDS BV

    Inventor： KOOLE ROELOF ,  DIJKSMAN JOHAN ,  WUISTER SANDER ,  PEETERS EMIEL

    IPC: G03F7/20

    Abstract: A method of lithography on a substrate uses a self-assembled polymer (SAP) layer deposited on the substrate, with first and second domains arranged in a pattern across the layer. A planarization layer is formed over the SAP and a development etch applied to substantially remove a portion of the planarization layer over the second domain leaving a cap of the planarization layer substantially covering the first domain. The uncapped second domain is then removed from the surface by a breakthrough etch leaving the capped first domain as a pattern feature on the surface. A transfer etch may then be used to transfer the pattern feature to the substrate using the capped first domain. The capping allows the second domain to be removed, e.g., without excessive loss of lateral feature width for the remaining first domain, even when the difference in etch resistance between the first and second domains is small.

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