公开(公告)号：DE10393309T5

公开(公告)日：2005-12-29

申请号：DE10393309

申请日：2003-09-16

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： CABRAL CYRIL JR ,  IGGULDEN ROY C ,  MCSTAY IRENE LENNOX ,  CLEVENGER LAWRENCE A ,  WANG YUN YU ,  WONG KEITH KWONG HON ,  ROBL WERNER ,  GLUSCHENKOV OLEG ,  MALIK RAJEEV ,  SCHUTZ RONALD J

IPC: H01L20060101 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L29/40 ,  H01L29/51 ,  H01L29/78

Abstract: A conductive structure in an integrated circuit ( 12 ), and a method of forming the structure, is provided that includes a polysilicon layer ( 30 ), a thin layer containing titanium over the polysilicon, a tungsten nitride layer ( 34 ) over the titanium-containing layer and a tungsten layer over the tungsten nitride layer. The structure also includes a silicon nitride interfacial region ( 38 ) between the polysilicon layer and the titanium-containing layer. The structure withstands high-temperature processing without substantial formation of metal silicides in the polysilicon layer ( 30 ) and the tungsten layer ( 32 ), and provides low interface resistance between the tungsten layer and the polysilicon layer.

公开(公告)号：EP1911096A4

公开(公告)日：2008-10-22

申请号：EP06788341

申请日：2006-07-24

Applicant: IBM

Inventor： DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO ,  GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A

IPC: H01L27/22 ,  H01L21/768 ,  H01L21/8247 ,  H01L23/528 ,  H01L43/12

CPC classification number: B82Y10/00 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

公开(公告)号：EP1994563A4

公开(公告)日：2011-06-22

申请号：EP07797080

申请日：2007-01-16

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS C ,  RADENS CARL ,  WONG KWONG-HON ,  YANG CHIH-CHAO

IPC: H01L27/01 ,  H01L21/8234

CPC classification number: H01L27/1203 ,  H01L21/28114 ,  H01L21/823456 ,  H01L21/84 ,  H01L29/42376 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP2140458A4

公开(公告)日：2010-05-05

申请号：EP07867608

申请日：2007-12-04

Applicant: IBM

Inventor： GAIDIS MICHAEL C ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  DEBROSSE JOHN K ,  HSU LOUIS L C ,  RADENS CARL ,  WONG KEITH K H ,  YANG CHIH-CHAO

IPC: G11C19/08 ,  G11B5/008

CPC classification number: G11C19/0841 ,  B82Y10/00 ,  G11C5/02 ,  G11C11/161 ,  G11C11/1675 ,  Y10T29/53165

公开(公告)号：EP2235744A4

公开(公告)日：2011-12-14

申请号：EP09704513

申请日：2009-01-15

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  DORIS BRUCE B ,  HUANG ELBERT E ,  PURUSHOTHAMAN SAMPATH ,  RADENS CARL J

IPC: H01L29/78 ,  H01L21/311 ,  H01L21/336 ,  H01L21/8238

CPC classification number: H01L21/31144 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823871 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/665 ,  H01L29/7833 ,  H01L29/7843

公开(公告)号：EP1875499A4

公开(公告)日：2009-11-04

申请号：EP06749449

申请日：2006-04-07

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS C

IPC: H01L21/8242 ,  H01L21/20

CPC classification number: H01L23/5223 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1920493A4

公开(公告)日：2011-05-04

申请号：EP06802645

申请日：2006-08-30

Applicant: IBM

Inventor： HSU LOUIS C ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  RADENS CARL J ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

IPC: H01H50/00 ,  H01P1/10

CPC classification number: H01H50/005 ,  H01H2050/007 ,  Y10T29/4902 ,  Y10T29/49105 ,  Y10T29/49147

公开(公告)号：EP1869700A4

公开(公告)日：2010-12-15

申请号：EP06740771

申请日：2006-04-07

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  CLEVENGER LAWRENCE A ,  COWLEY ANDREW P ,  DALTON TIMOTHY J ,  YOON MEEYOUNG H

IPC: H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/76849 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76831 ,  H01L21/76843 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1836726A4

公开(公告)日：2010-07-28

申请号：EP05852629

申请日：2005-12-02

Applicant: IBM

Inventor： CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS C ,  RADENS CARL J ,  STANDAERT THEODORUS E ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

IPC: H01L21/4763

CPC classification number: H01L21/76852 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：WO2007016047A3

公开(公告)日：2008-01-03

申请号：PCT/US2006028718

申请日：2006-07-24

Applicant: IBM ,  GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

Inventor： GAIDIS MICHAEL C ,  RADENS CARL ,  CLEVENGER LAWRENCE A ,  DALTON TIMOTHY J ,  HSU LOUIS L C ,  WONG KEITH KWONG HON ,  YANG CHIH-CHAO

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC classification number: B82Y10/00 ,  H01L27/222 ,  H01L43/12

Abstract: A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.

Abstract translation: 磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。 上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。