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    METHODS FOR FABRICATION OF MEMS DEVICE
    172.
    发明公开
    METHODS FOR FABRICATION OF MEMS DEVICE 审中-公开

    公开(公告)号：US20240327206A1

    公开(公告)日：2024-10-03

    申请号：US18409384

    申请日：2024-01-10

    Applicant: Omnitron Sensors

    Inventor： Trent Huang

    IPC: B81C1/00

    CPC classification number: B81C1/00301 ,  B81C2201/0133

    Abstract: A system and method for fabricating a micro-electromechanical system (MEMS) device is disclosed. A device layer, a handle layer and a buried oxide layer between the handle layer and the device wafer are formed. A top trench is created in a top surface of the device layer. An oxide layer is created over the top surface of the device layer and the top trench. The top of the device layer and the top trench is coated with a polysilicon layer. The oxide layer of the top trench or the top of the device layer is selectively etched away to create a structure. A bottom trench is created through the handle layer under the structure.

    Bipolar transistor type MEMS pressure sensor and preparation method thereof
    175.
    发明授权
    Bipolar transistor type MEMS pressure sensor and preparation method thereof 有权

    公开(公告)号：US11965797B1

    公开(公告)日：2024-04-23

    申请号：US18372687

    申请日：2023-09-25

    Applicant: Wuxi Sencoch Semiconductor Co., Ltd.

    Inventor： Tongqing Liu

    IPC: G01L9/06 ,  B81C1/00

    CPC classification number: G01L9/065 ,  B81C1/00539 ,  B81C2201/0133 ,  B81C2201/016 ,  B81C2201/0171

    Abstract: The present disclosure discloses a bipolar transistor type MEMS pressure sensor and a preparation method thereof. The bipolar transistor type MEMS pressure sensor includes a thin film, a cantilever beam and a bipolar transistor. The bipolar transistor includes a base region, a collector region and an emitter region. The base region is configured to sense deformation of the thin film through a change in resistance value. For the bipolar transistor type MEMS pressure sensor of the disclosure, sensitivity of the sensor can be effectively improved without changing the performance indicators such as the measurement range and nonlinearity. Meanwhile, the bipolar transistor is used as a pressure-sensitive element, so that temperature drift of the sensor can be effectively inhibited.

    Method for ablating or roughening wafer surfaces
    176.
    发明授权
    Method for ablating or roughening wafer surfaces 有权

    公开(公告)号：US11958739B2

    公开(公告)日：2024-04-16

    申请号：US17188985

    申请日：2021-03-01

    Applicant: University of Rhode Island Board of Trustees

    Inventor： Jason Rodger Dwyer ,  Y. M. Nuwan D. Y. Bandara ,  Brian Sheetz

    IPC: B81C1/00

    CPC classification number: B81C1/00547 ,  B81C1/00071 ,  B81C2201/0133 ,  B81C2201/0145

    Abstract: The present invention provides a simple method for ablating a protective thin film on a bulk surface and roughening the underlying bulk. In an embodiment, silicon nitride thin films, which are useful as etch-stop masks in micro- and nano-fabrication, is removed from a silicon wafer's surface using a hand-held “flameless” Tesla-coil lighter. Vias created by a spatially localized electron beam from the lighter allow a practitioner to perform micro- and nano-fabrication without the conventional steps of needing a photoresist and photolithography. Patterning could be achieved with a hard mask or rastering of the spatially confined discharge, offering—with low barriers to rapid use—particular capabilities that might otherwise be out of reach to researchers without access to conventional, instrumentation-intensive micro- and nano-fabrication workflows.

    MICROCHIPS FOR USE IN ELECTRON MICROSCOPES AND RELATED METHODS
    177.
    发明公开
    MICROCHIPS FOR USE IN ELECTRON MICROSCOPES AND RELATED METHODS 审中-公开

    公开(公告)号：US20240120172A1

    公开(公告)日：2024-04-11

    申请号：US18479994

    申请日：2023-10-03

    Applicant: Northwestern University

    Inventor： Vinayak P. Dravid ,  Xiaobing Hu ,  Kunmo Koo

    IPC: H01J37/244 ,  B81C1/00 ,  H01J37/26

    CPC classification number: H01J37/244 ,  B81C1/00119 ,  H01J37/26 ,  B81C2201/0133 ,  H01J2237/24455

    Abstract: Method for fabricating a microchip are provided which may comprise forming a dopant mask layer on a front side surface of a silicon substrate having the front side surface and an opposing back side surface; removing a portion of the dopant mask layer according to a pattern to form a first exposed silicon region in the silicon substrate and a first unexposed silicon region in the silicon substrate; doping the first exposed silicon region in the silicon substrate with a p-type dopant to form a first p-type doped silicon region in the silicon substrate; forming a silicon nitride layer on the front side surface of the silicon substrate comprising the first p-type doped silicon region and the first unexposed silicon region; and forming an opening in the silicon substrate from the opposing back side surface of the silicon substrate to provide a microchip comprising the silicon substrate having the opening, a first silicon nitride window positioned within the opening, and a support structure mounted to the first silicon nitride window, the support structure comprising the first p-type doped silicon region. The fabricated microchips and methods of using the microchips are also provided.

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