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公开(公告)号：US09663357B2
公开(公告)日：2017-05-30
申请号：US14963362
申请日：2015-12-09
Applicant: Texas Instruments Incorporated
Inventor： Jie Mao , Hau Nguyen , Luu Nguyen , Anindya Poddar
IPC: H01L21/683 , B81C1/00 , B81B7/00
CPC classification number: B81C1/00873 , B81B7/007 , B81B2201/0214 , B81B2201/0235 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2201/047 , B81B2207/07 , B81B2207/098 , B81C1/00333 , B81C2201/0125 , B81C2201/0132 , B81C2201/0159 , B81C2201/0181 , B81C2201/0188 , B81C2203/0136 , H01L21/561 , H01L21/568 , H01L21/6836 , H01L23/3121 , H01L24/19 , H01L2221/68359 , H01L2224/04105 , H01L2224/96 , H01L2924/3511
Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.
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公开(公告)号：US20170001856A1
公开(公告)日：2017-01-05
申请号：US15162027
申请日：2016-05-23
Applicant: Honeywell International Inc.
Inventor： Gordon A. Shaw , Daniel Baseman , Chris Finn , Jim G. Hunter
CPC classification number: B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81B2207/015 , B81B2207/07 , B81C1/0015 , B81C2201/013 , B81C2201/0197
Abstract: Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.
Abstract translation: 本文描述了微结构电镀系统和方法。 一种方法包括在微结构和结合层之间沉积耐镀材料，其中微结构包括电镀工艺基材并将微结构浸入电镀液中。
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公开(公告)号：US20160341579A1
公开(公告)日：2016-11-24
申请号：US15226812
申请日：2016-08-02
Applicant: InvenSense, Inc.
Inventor： Taro KIMURA , William Kerry KEAL , Geo GAO
CPC classification number: G01D18/008 , B81B7/02 , B81B2201/0242 , B81B2201/0292 , G01C19/5776 , G01C21/165 , H03L1/00 , H03L7/00
Abstract: In a method of gyroscope operation, at an input of a gyroscope, a synchronization signal provided by an image sensor is received. The synchronization signal is associated with the capture of a portion of an image frame by the image sensor. Responsive to receipt of the synchronization signal by the gyroscope, the gyroscope generates gyroscope data that is substantially synchronized in time with the synchronization signal. The gyroscope outputs the gyroscope data for use in stabilization of the portion of the image frame.
Abstract translation: 在陀螺仪操作的方法中，在陀螺仪的输入处，接收由图像传感器提供的同步信号。 同步信号与由图像传感器捕获图像帧的一部分相关联。 陀螺仪响应于通过陀螺仪接收到同步信号，产生与同步信号基本上同步的陀螺仪数据。 陀螺仪输出陀螺仪数据，用于稳定图像帧的部分。
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公开(公告)号：US20160332866A1
公开(公告)日：2016-11-17
申请号：US15111044
申请日：2015-01-13
Applicant: NextInput, Inc.
Inventor： Amnon Brosh , Ryan Diestelhorst , Steven Nasiri
IPC: B81B3/00
CPC classification number: B81B3/0056 , B81B2201/0264 , B81B2201/0292 , B81C1/00626 , G01L1/18 , G01L1/205 , G01L9/0047 , G01L9/0048
Abstract: Described herein is a miniaturized and ruggedized wafer level MEMS force sensor composed of a base and a cap. The sensor employs multiple flexible membranes, a mechanical overload stop, a retaining wall, and piezoresistive strain gauges.
Abstract translation: 这里描述的是由基座和盖组成的小型化和加固的晶片级MEMS力传感器。 传感器采用多个柔性膜，机械过载停止，挡土墙和压阻应变计。
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公开(公告)号：US20160318757A1
公开(公告)日：2016-11-03
申请号：US14699094
申请日：2015-04-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou , Chih-Jen Chan , Chia-Shiung Tsai , Ru-Liang Lee , Yuan-Chih Hsieh
CPC classification number: B81C1/00595 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0109 , B81C1/00357 , B81C1/00801 , B81C2201/0132
Abstract: A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.
Abstract translation: 提供一种形成IC（集成电路）装置的方法。 该方法包括接收包括第一基板的第一晶片，并且包括设置在其上表面上的等离子体反射层。 等离子体反射层被配置为从其反射等离子体。 介电保护层形成在第二晶片的下表面上，其中第二晶片包括第二基板。 第二晶片被接合到第一晶片，使得在等离子体反射层和介电保护层之间形成空腔。 用等离子体进行蚀刻工艺以形成从第二晶片的上表面延伸并通过介电保护层进入空腔的开口。 还提供了上述方法的结果。
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Patent Agency Ranking
236.发明授权Miniaturized sensor comprising a heating element, and associated production method 有权微型传感器包括加热元件和相关联的制造方法公开(公告)号：US09476746B2
公开(公告)日：2016-10-25
申请号：US14232040
申请日：2012-07-12
Applicant: Romain Viard , Abdelkrim Talbi , Philippe Jacques Pernod , Alain Merlen , Vladimir Preobrazhensky
Inventor： Romain Viard , Abdelkrim Talbi , Philippe Jacques Pernod , Alain Merlen , Vladimir Preobrazhensky
IPC: G01F1/688 , B81B3/00 , G01F1/684 , G01L21/12 , H01L41/316 , H01L41/332
CPC classification number: G01F1/688 , B81B3/0081 , B81B2201/0264 , B81B2201/0292 , B81B2203/0109 , G01F1/6845 , G01F1/6882 , G01L21/12 , H01L41/316 , H01L41/332
Abstract: The invention relates to a miniaturized sensor having a heating element, and to an associated production method. The sensor includes a substrate, a cavity and a heat-insulating structure suspended above the cavity by areas connecting to the substrate. The heat-insulating structure includes at least two bridges extending above the cavity, the heating element being supported by said bridges, extending transversely thereto.
Abstract translation: 本发明涉及一种具有加热元件的微型传感器，以及相关的生产方法。 传感器包括基板，空腔和隔热结构，该结构通过连接到基板的区域悬挂在空腔上方。 隔热结构包括在空腔上方延伸的至少两个桥，加热元件由所述桥支撑，横向延伸。
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237.发明申请Actuator, Shutter Device, Fluid Control Device, Switch, and Two-Dimensional Scanning Sensor Device 审中-公开执行器，快门装置，流体控制装置，开关和二维扫描传感器装置公开(公告)号：US20160204716A1
公开(公告)日：2016-07-14
申请号：US14910622
申请日：2014-07-30
Applicant: NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY , OMRON CORPORATION , KABUSHIKI KAISHA SAGINOMIYA SEISAKUSHO
Inventor： Masato SUZUKI , Akito MORI , Gen HASHIGUCHI , Tatsuhiko SUGIYAMA , Hiroshi IMAMOTO , Masatoshi OBA , Hiroyuki MITSUYA , Hisayuki ASHIZAWA , Kazunori ISHIBASHI
CPC classification number: H02N1/008 , B81B3/0054 , B81B2201/018 , B81B2201/0292 , B81B2201/033 , B81B2201/036 , B81B2201/047 , B81B2203/0109 , B81B2203/0163 , B81B2203/051 , F16K31/02 , G02B26/02 , H01H59/00
Abstract: An actuator includes: an electrostatic actuation mechanism including a stationary electrode and a movable electrode; a first movable part driven by the electrostatic actuation mechanism; a first elastic support part that elastically supports the first movable part; an electret formed in at least one of the stationary electrode and the movable electrode; and a drive control unit that controls application of voltage to the electrostatic actuation mechanism. In the actuator a plurality of stable states are set in which the first movable part is positioned at a stable position at which an electrostatic force generated by the electret matches with an elastic force exerted by the first elastic support part or at a stable position near such stable position. By applying a voltage to the electrostatic actuation mechanism, the first movable part may be displaced from any stable position to another stable position.
Abstract translation: 致动器包括：静电致动机构，包括固定电极和可动电极; 由静电致动机构驱动的第一可动部; 第一弹性支撑部，其弹性地支撑所述第一可动部; 在所述固定电极和所述可动电极中的至少一个上形成的驻极体; 以及驱动控制单元，其控制对静电致动机构施加电压。 在致动器中，设置多个稳定状态，其中第一可移动部件位于由驻极体产生的静电力与由第一弹性支撑部分施加的弹力相匹配的稳定位置处，或者靠近这样的稳定位置 稳定的位置。 通过向静电致动机构施加电压，第一可动部件可以从任何稳定位置移动到另一个稳定位置。
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公开(公告)号：US09371222B2
公开(公告)日：2016-06-21
申请号：US13839923
申请日：2013-03-15
Applicant: Honeywell International Inc.
Inventor： Gordon A. Shaw , Daniel Baseman , Chris Finn , Jim G. Hunter
CPC classification number: B81B3/0021 , B81B2201/0292 , B81B2203/0118 , B81B2207/015 , B81B2207/07 , B81C1/0015 , B81C2201/013 , B81C2201/0197
Abstract: Microstructure plating systems and methods are described herein. One method includes depositing a plating-resistant material between a microstructure and a bonding layer, wherein the microstructure comprises a plating process base material and immersing the microstructure in a plating solution.
Abstract translation: 本文描述了微结构电镀系统和方法。 一种方法包括在微结构和结合层之间沉积耐镀材料，其中微结构包括电镀工艺基材并将微结构浸入电镀液中。
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公开(公告)号：US20150298966A1
公开(公告)日：2015-10-22
申请号：US14257553
申请日：2014-04-21
Applicant: PHILIP H. BOWLES , STEPHEN R. HOOPER
Inventor： PHILIP H. BOWLES , STEPHEN R. HOOPER
CPC classification number: B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0292 , B81B2207/07 , B81C1/0023 , B81C2203/0154 , B81C2203/0792 , H01L2224/05554 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A small area semiconductor device package containing two or more MEMS sensor device die and a controller die for the sensor devices is provided. The controller die is mounted on top of the largest MEMS sensor device die (e.g., a gyroscope) and over a second MEMS sensor device die (e.g., an accelerometer). In one embodiment, the controller die is also mounted on the top of the second MEMS sensor device die. In another embodiment, the controller die overhangs the second MEMS sensor device die, which is of a lesser thickness than the first MEMS sensor device die.
Abstract translation: 提供了一种包含两个或更多个MEMS传感器器件管芯和用于传感器器件的控制器管芯的小面积半导体器件封装。 控制器管芯安装在最大的MEMS传感器器件管芯（例如，陀螺仪）的顶部上，并且安装在第二MEMS传感器器件管芯（例如，加速度计）上。 在一个实施例中，控制器管芯也安装在第二MEMS传感器器件管芯的顶部上。 在另一个实施例中，控制器模具突出第二MEMS传感器器件管芯，该第二MEMS传感器器件管芯的厚度小于第一MEMS传感器器件管芯的厚度。
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公开(公告)号：US09157807B2
公开(公告)日：2015-10-13
申请号：US12456910
申请日：2009-06-24
Applicant: Walter B. Meinel , Kalin V. Lazarov , Brian E. Goodlin
Inventor： Walter B. Meinel , Kalin V. Lazarov , Brian E. Goodlin
CPC classification number: G01J5/12 , B81B2201/0292 , B81C1/00047 , G01J5/02 , G01J5/0225 , G01J5/024
Abstract: A semiconductor device includes a semiconductor layer (2) and a dielectric stack (3) on the semiconductor layer. A plurality of etchant openings (24-1,2 . . . ) are formed through the dielectric stack (3) for passage of etchant for etching a plurality of overlapping sub-cavities (4-1,2 . . . ), respectively. The etchant is introduced through the etchant openings to etch a composite cavity (4) in the semiconductor layer by simultaneously etching the plurality of overlapping sub-cavities into the semiconductor layer.
Abstract translation: 半导体器件包括在半导体层上的半导体层（2）和电介质叠层（3）。 多个蚀刻剂开口（24-1,2 ...）通过电介质叠层（3）形成，用于通过蚀刻剂，以分别蚀刻多个重叠的子腔（4-1,2 ...）。 通过蚀刻剂开口引入蚀刻剂，以通过同时将多个重叠子腔同时蚀刻到半导体层中来蚀刻半导体层中的复合空腔（4）。
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