公开(公告)号：US10770328B2

公开(公告)日：2020-09-08

申请号：US16121844

申请日：2018-09-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Xing Lin ,  Douglas A. Buchberger, Jr. ,  Xiaoping Zhou ,  Andrew Nguyen ,  Anchel Sheyner

IPC: H01L21/683 ,  H01J37/32 ,  H01L21/67

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

公开(公告)号：US10770269B2

公开(公告)日：2020-09-08

申请号：US15677929

申请日：2017-08-15

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Bradley Howard ,  Shahid Rauf ,  Ajit Balakrishna ,  Tom K. Choi ,  Kenneth S. Collins ,  Anand Kumar ,  Michael D. Willwerth ,  Yogananda Sarode Vishwanath

IPC: B29D22/00 ,  H01J37/32 ,  B01D45/08 ,  B32B1/02 ,  B29C65/00 ,  B32B1/08

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US10573493B2

公开(公告)日：2020-02-25

申请号：US15070847

申请日：2016-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Valentin N. Todorow ,  Samer Banna ,  Ankur Agarwal ,  Zhigang Chen ,  Tse-Chiang Wang ,  Andrew Nguyen ,  Martin Jeff Salinas ,  Shahid Rauf

IPC: C23C16/00 ,  H01L21/326 ,  H01J37/32 ,  B44C1/22 ,  C23C16/505

Abstract: Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

公开(公告)号：US20190295826A1

公开(公告)日：2019-09-26

申请号：US16438277

申请日：2019-06-11

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Andrew Nguyen ,  Changhun Lee ,  Xiaoming He ,  Meihua Shen

IPC: H01J37/32

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.

公开(公告)号：US09761416B2

公开(公告)日：2017-09-12

申请号：US14200077

申请日：2014-03-07

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Bradley Howard ,  Shahid Rauf ,  Ajit Balakrishna ,  Tom K. Cho ,  Kenneth S. Collins ,  Anand Kumar ,  Michael D. Willwerth ,  Yogananda Sarode Vishwanath

IPC: B01D45/00 ,  H01J37/32 ,  B01D45/08 ,  B32B1/02 ,  B29C65/00

CPC classification number: H01J37/32495 ,  B01D45/08 ,  B29C66/71 ,  B32B1/02 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/32871 ,  Y10T428/13

Abstract: Embodiments of the present disclosure generally provide various apparatus and methods for reducing particles in a semiconductor processing chamber. One embodiment of present disclosure provides a vacuum screen assembly disposed over a vacuum port to prevent particles generated by the vacuum pump from entering substrate processing regions. Another embodiment of the present disclosure provides a perforated chamber liner around a processing region of the substrate. Another embodiment of the present disclosure provides a gas distributing chamber liner for distributing a cleaning gas around the substrate support under the substrate supporting surface.

公开(公告)号：US09745663B2

公开(公告)日：2017-08-29

申请号：US13666224

申请日：2012-11-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Shahid Rauf ,  James D. Carducci ,  Douglas A. Buchberger, Jr. ,  Ankur Agarwal ,  Jason A. Kenney ,  Leonid Dorf ,  Ajit Balakrishna ,  Richard Fovell

IPC: H01L21/00 ,  C23C16/00 ,  C23F1/08 ,  C23C14/28 ,  H05H1/46 ,  B01J12/00 ,  H01J37/32

CPC classification number: C23F1/08 ,  B01J12/002 ,  C23C14/28 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32733 ,  H01J37/32834 ,  H05H1/46

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

公开(公告)号：US09601301B2

公开(公告)日：2017-03-21

申请号：US14283159

申请日：2014-05-20

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Andrew Nguyen ,  Michael G. Chafin

IPC: H01J37/32 ,  H01J37/00 ,  H01L21/683

CPC classification number: H01J37/00 ,  H01J37/32715 ,  H01J37/32935 ,  H01L21/6833

Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

公开(公告)号：US20160358792A1

公开(公告)日：2016-12-08

申请号：US15238604

申请日：2016-08-16

Applicant: Applied Materials, Inc.

Inventor： Nagendra V. Madiwal ,  Robert Irwin Decottignies ,  Andrew Nguyen ,  Paul B. Reuter ,  Angela R. Sico ,  Michael Kuchar ,  Travis Morey ,  Mitchell DiSanto

IPC: H01L21/67 ,  C23C16/455

CPC classification number: H01L21/6719 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126 ,  Y10T29/49432

Abstract: An electronic device manufacturing system may include a chamber port assembly that provides an interface between a transfer chamber and a process chamber. In some embodiments, the chamber port assembly may be configured to direct a flow of purge gas into a substrate transfer area of the chamber port assembly. In other embodiments, a process chamber and/or the transfer chamber may be configured to direct a flow of purge gas into the substrate transfer area. The flow of purge gas into a substrate transfer area may prevent and/or reduce migration of particulate matter from chamber hardware onto a substrate being transferred between the transfer chamber and a process chamber. Methods of assembling a chamber port assembly are also provided, as are other aspects.

Abstract translation: 电子设备制造系统可以包括提供传送室和处理室之间的界面的室端口组件。 在一些实施例中，室端口组件可以被配置成将净化气体流引导到腔室端口组件的衬底传送区域。 在其它实施例中，处理室和/或转移室可以被配置成将净化气体流引导到基板传送区域中。 吹扫气体流入衬底传送区域的流动可以防止和/或减少颗粒物质从腔室硬件到在转移室和处理室之间转移的衬底上的迁移。 还提供了组装腔室端口组件的方法，以及其他方面。

公开(公告)号：US09162236B2

公开(公告)日：2015-10-20

申请号：US13790735

申请日：2013-03-08

Applicant: Applied Materials, Inc.

Inventor： Roy C. Nangoy ,  Andrew Nguyen

IPC: B05B1/18 ,  H01L21/67 ,  H01J37/32 ,  C23C16/455 ,  B01F15/02

CPC classification number: B05B1/185 ,  B01F15/0264 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45578 ,  H01J37/32119 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

Abstract: Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas injection assembly. The gas injection assembly includes an inlet hub, a nozzle having a plurality of injection passages disposed against the inlet hub, and a distribution insert disposed between the nozzle and the inlet hub. The distribution insert has one or more gas distribution passages configured to connect the inlet hub to the plurality of the injection passages the nozzle. Each of the one or more gas distribution passages has one inlet connecting with a plurality of outlets, and distances between the inlet and each of the plurality of outlets are substantially equal.

Abstract translation: 本发明的实施例涉及用于向处理室提供具有改进的均匀性的处理气体的方法和装置。 本发明的一个实施例提供一种气体注入组件。 气体注入组件包括入口轮毂，具有多个设置在入口轮毂上的喷射通道的喷嘴以及设置在喷嘴和入口轮毂之间的分配插入件。 分配插件具有一个或多个气体分配通道，其构造成将入口轮毂连接到喷嘴的多个喷射通道。 一个或多个气体分配通道中的每一个具有与多个出口连接的一个入口，并且多个出口中的入口与每个出口之间的距离基本相等。

公开(公告)号：US20150170879A1

公开(公告)日：2015-06-18

申请号：US14108683

申请日：2013-12-17

Applicant: Applied Materials, Inc.

Inventor： Andrew Nguyen ,  Kartik Ramaswamy ,  Srinivas Nemani ,  Bradley Howard ,  Yogananda Sarode Vishwanath

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32449 ,  H01J37/32477

Abstract: An exemplary semiconductor processing system may include a high-frequency electrical source that has an outlet plug. The system may include a processing chamber having a top plate, and an inlet assembly coupled with the top plate. The inlet assembly may include an electrode defining an aperture at a first end and configured to receive the outlet plug. The aperture may be characterized at the first end by a first diameter, and a second end of the aperture opposite the first end may be characterized by a second diameter less than the first diameter. The inlet assembly may further include an inlet insulator coupled with the top plate and configured to electrically insulate the top plate from the electrode.

Abstract translation: 示例性的半导体处理系统可以包括具有出口插头的高频电源。 该系统可以包括具有顶板的处理室和与顶板联接的入口组件。 入口组件可以包括在第一端限定孔并且被配置为接收出口塞的电极。 孔可以在第一端被表征为第一直径，并且与第一端相对的孔的第二端的特征在于小于第一直径的第二直径。 入口组件还可包括与顶板耦合的入口绝缘体并且构造成使顶板与电极电绝缘。