公开(公告)号：US20210391519A1

公开(公告)日：2021-12-16

申请号：US17344872

申请日：2021-06-10

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chi-Hao Cheng

IPC: H01L33/62 ,  H01L33/22 ,  H01L33/46 ,  H01L33/40

Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer. A manufacturing method of the light emitting device is also provided.

公开(公告)号：US20200220050A1

公开(公告)日：2020-07-09

申请号：US16705255

申请日：2019-12-06

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Kai-Shun Kang ,  Tung-Lin Chuang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Chih-Ming Shen ,  Jing-En Huang

IPC: H01L33/46 ,  H01L33/00 ,  H01L33/14 ,  H01L33/38

Abstract: A light emitting diode (LED) including an epitaxial stacked layer, first and second reflective layers which are disposed at two sides of the epitaxial stacked layer, a current conducting layer and first and second electrodes and a manufacturing thereof are provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and an active layer. A main light emitting surface with a light transmittance >0% and ≤10% is formed on one of the two reflective layers. The current conducting layer contacts the second-type semiconductor layer. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer via the current conducting layer. A contact scope of the current conducting layer and the second-type semiconductor layer is served as a light-emitting scope overlapping the two layers, but not overlapping the two electrodes.

公开(公告)号：US10608144B2

公开(公告)日：2020-03-31

申请号：US15975743

申请日：2018-05-09

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62 ,  H01L33/40 ,  H01L33/36

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

公开(公告)号：US10573779B2

公开(公告)日：2020-02-25

申请号：US16231914

申请日：2018-12-24

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yi-Ru Huang ,  Sie-Jhan Wu ,  Long-Lin Ke

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/08 ,  H01L33/50 ,  H01L33/52 ,  H01L25/075 ,  H05B33/08 ,  H01L33/48 ,  H01L33/64 ,  H01L27/15

Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.

公开(公告)号：USD872701S1

公开(公告)日：2020-01-14

申请号：US29650986

申请日：2018-06-11

Applicant: GENESIS PHOTONICS INC.

Designer： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

公开(公告)号：US20190139932A1

公开(公告)日：2019-05-09

申请号：US16241947

申请日：2019-01-07

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L23/00 ,  H01L33/62 ,  H01L21/78 ,  H01L33/00 ,  H01L21/683 ,  H01L25/075

Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion are bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

公开(公告)号：US10134950B2

公开(公告)日：2018-11-20

申请号：US15680227

申请日：2017-08-18

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L27/15 ,  H01L33/06

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US20180261729A1

公开(公告)日：2018-09-13

申请号：US15975743

申请日：2018-05-09

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Chih-Ming Shen ,  Sheng-Tsung Hsu ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/50 ,  H01L33/44 ,  H01L33/10 ,  H01L33/62

CPC classification number: H01L33/46 ,  H01L33/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

公开(公告)号：US20180261727A1

公开(公告)日：2018-09-13

申请号：US15981855

申请日：2018-05-16

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

IPC: H01L33/38 ,  H01L33/46

CPC classification number: H01L33/38 ,  H01L33/36 ,  H01L33/382 ,  H01L33/385 ,  H01L33/387 ,  H01L33/405 ,  H01L33/46 ,  H01L33/465 ,  H01L33/60

Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

公开(公告)号：US10050183B2

公开(公告)日：2018-08-14

申请号：US15405323

申请日：2017-01-13

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Kuan-Chieh Huang ,  Jing-En Huang ,  Yu-Feng Lin ,  Yi-Ru Huang

IPC: H01L33/48 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62

Abstract: A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively.