公开(公告)号：US07728308B2

公开(公告)日：2010-06-01

申请号：US11628196

申请日：2005-05-13

Applicant: Tao Zhang

Inventor： Tao Zhang

IPC: H01J3/26

CPC classification number: G21K1/087 ,  H01J37/045 ,  H01J37/09 ,  H01J37/1472 ,  H01J37/15 ,  H01J2237/028 ,  H01J2237/0451 ,  H01J2237/3175

Abstract: A beam blanking unit (1) comprises first and second blanking plates (2, 3) mounted to a support plate (15). A stopper (4) is mechanically and electrically connected to the first blanking plate (2).

Abstract translation: 光束消隐单元（1）包括安装到支撑板（15）的第一和第二消隐板（2,3）。 制动器（4）机械地和电连接到第一冲裁板（2）。

公开(公告)号：US07714308B2

公开(公告)日：2010-05-11

申请号：US11899291

申请日：2007-09-05

Applicant: Masahito Hiroshima

Inventor： Masahito Hiroshima

IPC: H01J37/30 ,  H01J37/08 ,  G21K5/00

CPC classification number: H01J37/1472 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/0455 ,  H01J2237/0456 ,  H01J2237/0458 ,  H01J2237/0835

Abstract: This VSB lithography system includes a first, second and third aperture for forming a single electron beam in each of the rectangular opening portion that are provided, and draws a figure pattern using the single electron beam formed by passing the beam through the first, second and third aperture in sequence. Each of the first, second and third aperture has a mechanism for rotationally driving the aperture around an optical axis up to an arbitrary angle from 0 to 360°. Further, in the third aperture, a mechanism for varying the opening slit width of the rectangular opening portion is provided.

Abstract translation: 该VSB光刻系统包括用于在设置的每个矩形开口部分中形成单个电子束的第一，第二和第三孔，并且使用通过使光束穿过第一，第二和第二孔而形成的单个电子束来绘制图形图案 第三个孔径顺序。 第一，第二和第三孔中的每一个具有用于围绕光轴旋转地驱动孔径至0至360°任意角度的机构。 此外，在第三孔中，设置有用于改变矩形开口部分的开口狭缝宽度的机构。

公开(公告)号：US20100084581A1

公开(公告)日：2010-04-08

申请号：US12244001

申请日：2008-10-02

Applicant: Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

Inventor： Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/047 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

Abstract: An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

Abstract translation: 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。

公开(公告)号：US20100065753A1

公开(公告)日：2010-03-18

申请号：US12554577

申请日：2009-09-04

Applicant: Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

Inventor： Momoyo ENYAMA ,  Hiroya Ohta ,  Osamu Kamimura

IPC: H01J3/16

CPC classification number: H01J37/153 ,  H01J37/1472 ,  H01J2237/151 ,  H01J2237/1534

Abstract: With a multi-beam type charged particle beam apparatus, and a projection charged particle beam apparatus, in the case of off-axial aberration corrector, there is the need for preparing a multitude of multipoles, and power supply sources in numbers corresponding to the number of the multipoles need be prepared. In order to solve this problem as described, a charged particle beam apparatus is provided with at least one aberration corrector wherein the number of the multipoles required in the past is decreased by about a half by disposing an electrostatic mirror in an electron optical system.

Abstract translation: 使用多光束型带电粒子束装置和投影带电粒子束装置，在离轴像差校正器的情况下，需要准备多个多极，并且与数字对应的数量的电源 的多极需要准备。 为了解决上述问题，带电粒子束装置设置有至少一个像差校正器，其中通过在电子光学系统中设置静电镜，过去所需的多极数减少约一半。

公开(公告)号：US20080315112A1

公开(公告)日：2008-12-25

申请号：US12146331

申请日：2008-06-25

Applicant: John C. Wiesner

Inventor： John C. Wiesner

IPC: H01J3/14 ,  G03F7/20

CPC classification number: H01J37/304 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/1472 ,  H01J37/244 ,  H01J37/3045 ,  H01J37/3174 ,  H01J2237/2025 ,  H01J2237/20292 ,  H01J2237/2485 ,  H01J2237/30438 ,  H01J2237/3045 ,  H01J2237/30455

Abstract: The invention provides a method for patterning a resist coated substrate carried on a stage, where the patterning utilizes a charged particle beam. The method comprises the steps of: moving the stage at a nominally constant velocity in a first direction; while the stage is moving, deflecting the charged particle beam in the first direction to compensate for the movement of the stage, the deflecting including: (a) compensating for an average velocity of the stage; and (b) separately compensating for the difference between an instantaneous position of the stage and a calculated position based on the average velocity. The separately compensating step uses a bandwidth of less than 10 MHz. The invention also provides a deflector control circuit for implementing the separate compensation functions.

Abstract translation: 本发明提供了一种用于图案化承载在载物台上的抗蚀剂涂覆的基底的方法，其中图案化使用带电粒子束。 该方法包括以下步骤：在第一方向以标称恒定的速度移动舞台; 当舞台正在移动时，使带电粒子束沿第一方向偏转以补偿舞台的移动，偏转包括：（a）补偿舞台的平均速度; 和（b）基于平均速度分别补偿载物台的瞬时位置与计算的位置之间的差。 单独的补偿步骤使用小于10MHz的带宽。 本发明还提供一种用于实现单独补偿功能的偏转器控制电路。

公开(公告)号：US07414249B2

公开(公告)日：2008-08-19

申请号：US11289863

申请日：2005-11-30

Applicant: Kenneth H. Purser ,  Norman L. Turner

Inventor： Kenneth H. Purser ,  Norman L. Turner

IPC: H01J3/20 ,  H01J37/14

CPC classification number: H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/31701

Abstract: A method and apparatus satisfying growing demands for improving the intensity of implanting ions that impact a semiconductor wafer as it passes under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes for combating the disruptive effects of ion-beam induced space-charge forces. The design of the novel optical elements makes possible: (1) Focusing of a ribbon ion beam as the beam passes through uniform or non-uniform magnetic fields; (2) Reduction of the losses of ions comprising a d.c. ribbon beam to the magnetic poles when a ribbon beam is deflected by a magnetic field.

公开(公告)号：US20070187619A1

公开(公告)日：2007-08-16

申请号：US11276128

申请日：2006-02-15

Applicant: Peter Kellerman ,  Keneth Purser

Inventor： Peter Kellerman ,  Keneth Purser

IPC: H01J37/317 ,  H01J37/141

CPC classification number: H01J37/05 ,  H01J37/141 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/057 ,  H01J2237/141 ,  H01J2237/142 ,  H01J2237/1508 ,  H01J2237/152 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.

Abstract translation: 公开了一种包括活性场容纳的电磁体和相关离子注入机系统。 电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。 在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流 电线定位成绕过第一和第二相对侧的每个开口。

公开(公告)号：US20060169924A1

公开(公告)日：2006-08-03

申请号：US11341839

申请日：2006-01-27

Applicant: Kenneth Purser ,  Harald Enge ,  Norman Turner

Inventor： Kenneth Purser ,  Harald Enge ,  Norman Turner

IPC: H01J37/08

CPC classification number: H01J37/141 ,  H01J37/14 ,  H01J37/147 ,  H01J37/1472 ,  H01J37/153 ,  H01J37/315 ,  H01J37/3171 ,  H01J2237/141 ,  H01J2237/1534 ,  H01J2237/31703

Abstract: A method and apparatus satisfying growing demands for improving the precision of angle of incidence of implanting ions that impact a semiconductor wafer and the precision of ribbon ion beams for uniform doping of wafers as they pass under an ion beam. The method and apparatus are directed to the design and combination together of novel magnetic ion-optical transport elements for implantation purposes. The design of the optical elements makes possible: (1) Broad-range adjustment of the width of a ribbon beam at the work piece; (2) Correction of inaccuracies in the intensity distribution across the width of a ribbon beam; (3) Independent steering about both X and Y axes; (4) Angle of incidence correction at the work piece; and (5) Approximate compensation for the beam expansion effects arising from space charge. In a practical situation, combinations of the elements allow ribbon beam expansion between source and work piece to 350 millimeter, with good uniformity and angular accuracy. Also, the method and apparatus may be used for introducing quadrupole fields along a beam line.

Abstract translation: 一种满足日益增长的要求的方法和装置，用于提高冲击半导体晶片的注入离子入射角的精度以及当离子束通过时晶片的均匀掺杂的带状离子束的精度。 该方法和装置涉及用于植入目的的新型磁离子 - 光学传输元件的设计和组合。 光学元件的设计成为可能：（1）宽幅调节工件上的带状光束的宽度; （2）纠正带状横梁宽度的强度分布不准确; （3）关于X轴和Y轴的独立转向; （4）工件入射角校正; 和（5）空间费用引起的光束膨胀效应的近似补偿。 在实际情况下，这些元件的组合允许源和工件之间的带状光束膨胀到350毫米，具有良好的均匀性和角度精度。 此外，该方法和装置可用于沿着光束线引入四极场。

公开(公告)号：US20060097200A1

公开(公告)日：2006-05-11

申请号：US11304680

申请日：2005-12-16

Applicant: Mamoru Nakasuji ,  Takao Kato ,  Nobuharu Noji ,  Tohru Satake ,  Takeshi Murakami ,  Kenji Watanabe

Inventor： Mamoru Nakasuji ,  Takao Kato ,  Nobuharu Noji ,  Tohru Satake ,  Takeshi Murakami ,  Kenji Watanabe

IPC: G21G4/00

CPC classification number: H01J3/10 ,  B82Y10/00 ,  B82Y40/00 ,  G01N23/225 ,  H01J3/021 ,  H01J37/063 ,  H01J37/073 ,  H01J37/1471 ,  H01J37/1472 ,  H01J37/3174 ,  H01J2237/06316 ,  H01J2237/2817

Abstract: An electron beam apparatus, in which an electron beam emitted from an electron gun having a cathode and an anode is focused and irradiated onto a sample, and secondary electrons emanated from the sample are directed into a detector, the apparatus further comprising means for optimizing irradiation of the electron beam emitted from the electron gun onto the sample, the optimizing means may be two-stage deflectors disposed in proximity to the electron gun which deflects and directs the electron beam emitted in a specific direction so as to be in alignment with the optical axis direction of the electron beam apparatus, the electron beam emitted in the specific direction being at a certain angle with respect to the optical axis due to the fact that, among the crystal orientations of said cathode, a specific crystal orientation allowing a higher level of electron beam emission out of alignment with the optical axis direction.

公开(公告)号：US20050121610A1

公开(公告)日：2005-06-09

申请号：US10959499

申请日：2004-10-07

Applicant: Hideaki Abe

Inventor： Hideaki Abe

IPC: G21K1/093 ,  G01N23/225 ,  G21K5/00 ,  G21K5/04 ,  H01J37/147 ,  H01J37/28 ,  H01L21/66

CPC classification number: H01J37/1472 ,  G01N23/2251 ,  H01J2237/30488 ,  H01J2237/3175

Abstract: A charged particle beam irradiation method includes: obtaining shape information of an edge of a pattern to be inspected that is formed on a subject; creating a first line group substantially perpendicular to the pattern edge; creating a second line group substantially parallel with the pattern edge; specifying areas defined by the first line group and the second line group as a lattice group including irradiation positions of a charged particle beam; deciding an order to irradiate the areas with the charged particle beam so that the lattice group is sequentially scanned in a direction of the first or second line group; and scanning the subject with the charged particle beam in accordance with the irradiation order.

Abstract translation: 带电粒子束照射方法包括：获得形成在被检体上的待检查图案的边缘的形状信息; 形成基本上垂直于图案边缘的第一线组; 产生基本上与图案边缘平行的第二线组; 将由第一线组和第二线组限定的区域指定为包括带电粒子束的照射位置的格子组; 决定用所述带电粒子束照射所述区域的顺序，使得所述晶格组在所述第一线组或第二线组的方向上顺序扫描; 并根据照射顺序用带电粒子束扫描被检体。