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公开(公告)号：US20180374892A1
公开(公告)日：2018-12-27
申请号：US16101681
申请日：2018-08-13
Applicant: Genesis Photonics Inc.
Inventor： Tsung-Syun Huang , Chih-Chung Kuo , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L27/15 , H01L27/153 , H01L33/20 , H01L2933/0016
Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.
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公开(公告)号：US10164145B2
公开(公告)日：2018-12-25
申请号：US15859714
申请日：2018-01-01
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
IPC: H01L33/00 , H01L33/62 , H01L33/08 , H01L33/50 , H01L33/52 , H01L25/075 , H05B33/08 , H01L33/48 , H01L33/64 , H01L27/15
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting element, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
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公开(公告)号：US20180248078A1
公开(公告)日：2018-08-30
申请号：US15965999
申请日：2018-04-30
Applicant: Genesis Photonics Inc.
Inventor： Yu-Chen Kuo , Teng-Hsien Lai , Kai-Shun Kang , Yan-Ting Lan , Jing-En Huang , Cheng-Pin Chen , Wei-Chen Chien , Chih-Chin Cheng , Chih-Hung Tseng
CPC classification number: H01L33/38 , H01L33/145
Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.
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公开(公告)号：US20180130926A1
公开(公告)日：2018-05-10
申请号：US15727545
申请日：2017-10-06
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Sheng-Tsung Hsu , Yu-Chen Kuo , Chih-Ming Shen , Tung-Lin Chuang , Tsung-Syun Huang , Jing-En Huang
CPC classification number: H01L33/382 , H01L33/007 , H01L33/0095 , H01L33/06 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/387 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0025
Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.
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公开(公告)号：US20180122984A1
公开(公告)日：2018-05-03
申请号：US15859714
申请日：2018-01-01
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang , Sie-Jhan Wu , Long-Lin Ke
IPC: H01L33/00 , H05B33/08 , H01L33/08 , H01L33/48 , H01L33/50 , H01L33/62 , H01L33/52 , H01L25/075 , H01L33/64 , H01L27/15
CPC classification number: H01L33/0095 , H01L25/0753 , H01L27/15 , H01L33/005 , H01L33/08 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/507 , H01L33/52 , H01L33/62 , H01L33/64 , H01L2224/04105 , H01L2224/18 , H01L2224/19 , H01L2224/24137 , H01L2924/0002 , H01L2933/0016 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H05B33/0803 , H05B33/0806 , H05B33/0827 , H01L2924/00
Abstract: A method for manufacturing a light emitting unit is provided. A semiconductor structure including a plurality of light emitting dice separated from each other is provided. A molding compound is formed to encapsulate the light emitting dice. Each of the light emitting dice includes a light emitting clement, a first electrode and a second electrode. A patterned metal layer is formed on the first electrodes and the second electrodes of the light emitting dice. A substrate is provided, where the molding compound is located between the substrate and the light emitting elements of the light emitting dice. A cutting process is performed to cut the semiconductor structure, the patterned metal layer, the molding compound and the substrate so as to define a light emitting unit with a series connection loop, a parallel connection loop or a series-parallel connection loop.
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Patent Agency Ranking
公开(公告)号：US20180083168A1
公开(公告)日：2018-03-22
申请号：US15823480
申请日：2017-11-27
Applicant: Genesis Photonics Inc.
Inventor： Kuan-Chieh Huang , Shao-Ying Ting , Jing-En Huang , Yi-Ru Huang
CPC classification number: H01L33/505 , H01L33/507 , H01L33/54 , H01L33/56 , H01L33/60
Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.
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67.发明申请公开(公告)号：US20180033914A1
公开(公告)日：2018-02-01
申请号：US15726673
申请日：2017-10-06
Applicant: GENESIS PHOTONICS INC.
Inventor： Yi-Fan Li , Jing-En Huang , Sie-Jhan Wu
CPC classification number: H01L33/22 , H01L33/005 , H01L33/0095 , H01L33/06 , H01L33/486 , H01L2933/0016 , H01L2933/0033 , H01L2933/0091
Abstract: A thin-film flip-chip light emitting diode (LED) having a roughened surface and a method for manufacturing the same are provided. First, a substrate having a patterned structure on a surface of the substrate is provided, and the surface is roughened. A first semiconductor layer is then formed on the surface; a light emitting structure layer is then formed on the first semiconductor layer; a second semiconductor layer is then formed on the light emitting structure layer. The first and second semiconductor layers possess opposite electrical characteristics. A first contact electrode and a second contact electrode are then formed on the first semiconductor layer and the second semiconductor layer, respectively. Finally, a sub-mount is formed on the first and second contact electrodes, and the substrate is removed to form the thin-film flip-chip LED having the roughened surface. Here, the light emitting efficiency of the thin-film flip-chip LED is improved.
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公开(公告)号：US20170323870A1
公开(公告)日：2017-11-09
申请号：US15657299
申请日：2017-07-24
Applicant: Genesis Photonics Inc.
Inventor： Shao-Ying Ting , Kuan-Chieh Huang , Jing-En Huang , Yi-Ru Huang
IPC: H01L25/075 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/46 , H01L33/50 , H01L33/52 , H01L33/56 , H01L33/62 , H01L33/58 , H01L33/42 , H01L33/54 , H01L33/00
CPC classification number: H01L25/0753 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/507 , H01L33/52 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2933/0016 , H01L2933/0025 , H01L2933/005 , H01L2933/0058 , H01L2924/00014
Abstract: A light-emitting device including a light-emitting unit, a packaging sealant, a transparent layer, and a reflective structure is provided. The light-emitting unit has at least one epitaxial layer and two electrodes correspondingly formed on the epitaxial layer. The epitaxial layer has a top surface, a bottom surface on which the two electrodes are exposed, and a side surface connecting the bottom surface and the top surface. The packaging sealant is formed on the top surface and the side surface of the epitaxial layer. The transparent layer is disposed on the packaging sealant and located above the top surface of the epitaxial layer. The reflective structure is disposed surrounding the side surface of the epitaxial layer and formed on the packaging sealant. A manufacturing method of the above light-emitting device is further provided.
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公开(公告)号：US20170309787A1
公开(公告)日：2017-10-26
申请号：US15644969
申请日：2017-07-10
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
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70.发明授权公开(公告)号：US09705045B2
公开(公告)日：2017-07-11
申请号：US15045488
申请日：2016-02-17
Applicant: Genesis Photonics Inc.
Inventor： Yi-Ru Huang , Kuan-Chieh Huang , Chih-Ming Shen , Tung-Lin Chuang , Hung-Chuan Mai , Jing-En Huang , Shao-Ying Ting
CPC classification number: H01L33/46 , H01L33/10 , H01L33/44 , H01L33/50 , H01L33/62 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2933/0025 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting diode (LED) having distributed Bragg reflector (DBR) and a manufacturing method thereof are provided. The distributed Bragg reflector is used as a reflective element for reflecting the light generated by the light emitting layer to an ideal direction of light output. The distributed Bragg reflector has a plurality of through holes, such that the metal layer and the transparent conductive layer disposed on two sides of the distributed Bragg reflector may contact each other to conduct the current. Due to the distribution properties of the through holes, the current may be more uniformly diffused, and the light may be more uniformly emitted from the light emitting layer.
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