Abstract:
A particle optical system comprises a beam generating system (3) configured to generate a plurality of particle beams (5) and to direct the plurality of particle beams (5) onto an object plane (7), a first deflector arrangement (35) arranged in the beam path of the particle beams (5) upstream of the object plane (7) and configured to deflect the plurality of particle beams (5) before they are incident on the object plane (7), an object holder (15) configured to hold an object (17) to be inspected in the object plane (7), a plurality of detectors (27) configured to receive and to detect the plurality of particle beams (5) having traversed the object plane (7), wherein the detectors are arranged in a detection plane (21) on a side of the object plane (7) opposite to the beam generating system (3), at least one first particle optical lens (19) configured to collect particles of the particle beams emanating from the object plane on the detectors (27), and a controller (31) configured to control the first deflector arrangement (35) in order to deflect locations of incidence (9) of the particle beams (5) on the object plane (7) by deflecting the particle beams (5).
Abstract:
In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region.
Abstract:
A charged-particle-beam device is characterized in having a control value for an aligner coil (29) being determined by: a coil current and an electrode applied-voltage at a control value for objectives (30, 31), which is an electromagnetic-field superposition lens; a control value for image-shift coils (27, 28); and the acceleration voltage of the charged-particle-beam. By doing this, it has become possible to avoid image disturbances that occur on images to be displayed at boundaries between charged areas and non-charged areas, and provide a charged-particle-beam device that obtains clear images without any unevenness in brightness.
Abstract:
The invention provides a charged particle beam system wherein the middle section of the focused ion beam column is biased to a high negative voltage allowing the beam to move at higher potential than the final beam energy inside that section of the column. At low kV potential, the aberrations and coulomb interactions are reduced, which results in significant improvements in spot size.
Abstract:
A particle beam device, in particular an electron beam device, is provided having a beam generator for generating a primary particle beam, an objective lens for focusing the primary particle beam onto an object, and a detector for detecting particles emitted by the object. The objective lens has at least one magnetic unit, with the magnetic unit generating at least one first crossover and at least one second crossover. The first crossover is arranged in the objective lens or in a region between the objective lens and the object. The second crossover is arranged at the object. The device permits the examination of the object using particles which have a low energy, with good imaging properties. A method for operating the particle beam device is also provided.
Abstract:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
Abstract:
An inspection device for inspecting a surface of an inspection object using a beam includes a beam generator capable of generating one of either charge particles or an electromagnetic wave as a beam, a primary optical system capable of guiding and irradiating the beam to the inspection object supported within a working chamber, a secondary optical system capable of including a first movable numerical aperture and a first detector which detects secondary charge particles generated from the inspection object, the secondary charge particles passing through the first movable numerical aperture, an image processing system capable of forming an image based on the secondary charge particles detected by the first detector; and a second detector arranged between the first movable numerical aperture and the first detector and which detects a location and shape at a cross over location of the secondary charge particles generated from the inspection object.
Abstract:
This electron scanning microscope comprises an electron source (102), electron optical systems (109, 110, 111) for exposing a sample (113) to primary electron beams (138), an electron detector (127) for detecting signal electrons (139) emitted from the sample, and a deceleration electrical field-type energy filter (108). The deceleration electrical field-type energy filter has a conductor thin film (304) for distinguishing the energy of signal electrons. With this configuration, it is possible to realize a scanning electron microscope having a deceleration electrical field-type energy filter with which high energy resolution is obtained, even in a case where the scanning electron microscope has a retarding optical system.
Abstract:
A transmission electron microscope (100) includes an electron beam source (2), an illumination lens (10), an objective lens (20), an intermediate lens system (30), a pair of transfer lenses (40) located behind the intermediate lens system (30), and an energy filter (60) for separating the electrons of the beam L transmitted through the specimen (S) according to energy. The transfer lenses (40) transfer the first image to the entrance crossover plane (S1) of the energy filter (60) and to transfer the second image to the entrance image plane (A1) of the filter (60). An image plane (A3) is formed between the first transfer lens (40a) and the second transfer lens (40b).
Abstract:
The invention relates to a charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system has a charged particle source, an aperture array, a beamlet manipulator, a beamlet blanker, and an array of projection lens systems. The charged particle source is configured to generate a charged particle beam. The aperture array is configured to define separate beamlets from the generated beam. The beamlet manipulator is configured to converge groups of the beamlets towards a common point of convergence for each group. The beamlet blanker is configured to controllably blank beamlets in the groups of beamlets. Finally, the array of projection lens systems is configured to project unblanked beamlets of the groups of beamlets on to the surface of the target. The beamlet manipulator is further adapted to converge each of the groups of beamlets towards a point corresponding to one of the projection lens systems.