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公开(公告)号：KR1020140127681A
公开(公告)日：2014-11-04
申请号：KR1020130046345
申请日：2013-04-25
Applicant: 한국화학연구원
CPC classification number: C07F5/003 , C23C16/305
Abstract: 본발명은하기화학식 1로표시되는인듐전구체에관한것으로, 상기인듐전구체는황을포함하고있는전구체로서박막제조중에별도의황을첨가시키지않아도되는장점이있고열적안정성과휘발성이향상되어양질의황화인듐박막을형성할수 있다.[화학식 1](상기식에서, R, R는각각독립적으로 C1-C10의선형또는분지형알킬기이고, R, R는각각독립적으로 C1-C10의선형또는분지형의알킬기또는 C1-C10의선형또는분지형의플루오르화알킬기이며, n은 1 내지 3 범위의정수에서선택된다.)
Abstract translation: 本发明涉及由化学式1表示的铟前体。铟前体含有硫，在薄膜制造期间不需要添加额外的硫作为前体，并且能够通过改进的热稳定性形成高质量的硫化铟薄膜 和波动。 在化学式1中，R 1和R 2分别是C 1 -C 10的直链或支链烷基。 R_3和R_4是C1-C10的直链或支链烷基或C1-C10的内衬或支链氟化烷基。 n为1-3的整数。
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公开(公告)号：KR1020140108885A
公开(公告)日：2014-09-15
申请号：KR1020130022728
申请日：2013-03-04
Applicant: 한국화학연구원
IPC: C30B13/14
Abstract: A pressure vessel for single crystal growth using shrink fitting of the present invention comprises: a pressure vessel body manufactured by a heat-resistant alloy; a liner manufactured with a material having corrosion resistance and inserted into the pressure vessel body; and a lower part supporter inserted through the lower part of the pressure vessel body and supporting the lower part of the liner, wherein the liner is inserted into the pressure vessel body after the pressure vessel body is heated with a heating furnace.
Abstract translation: 本发明的收缩配合用于单晶生长的压力容器包括：由耐热合金制成的压力容器主体; 由具有耐腐蚀性的材料制成的衬套插入到压力容器主体中; 以及通过压力容器本体的下部插入并支撑衬套的下部的下部支撑件，其中在用加热炉加压压力容器主体之后，将衬套插入压力容器主体。
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公开(公告)号：KR1020130127024A
公开(公告)日：2013-11-22
申请号：KR1020120048237
申请日：2012-05-07
Applicant: 한국화학연구원
IPC: C07F3/06 , C23C16/18 , H01L31/042
CPC classification number: Y02E10/50 , C07F3/06 , C23C16/306 , H01L31/0445
Abstract: The present invention relates to a zinc precursor represented by a chemical formula 1. The zinc precursor comprises sulfur and has advantages such as eliminating the need for separately adding sulfur while manufacturing a thin film, and forming a high-quality zinc sulfide thin film due to enhanced thermal stability and volatility. [Chemical formula 1] (In the chemical formula, R1 and R2 respectively are a linear alkyl group of C1-C10 or a branched alkyl group of C1-C10, R3 and R4 respectively are a linear alkyl group of C1-C10, a branched alkyl group of C1-C10, or a fluorinated alkyl group of C1-C10, and n is an integer of 1-3)
Abstract translation: 本发明涉及由化学式1表示的锌前体。锌前体包含硫，具有如下优点：在制造薄膜时不需要单独添加硫，并且由于制备薄膜而形成高质量的硫化锌薄膜 增强的热稳定性和挥发性。 [化学式1]（化学式中，R1，R2分别为C1-C10的直链烷基或C1-C10的支链烷基，R3和R4分别为C1-C10的直链烷基，支链 C1-C10的烷基或C1-C10的氟化烷基，n为1-3的整数）
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公开(公告)号：KR101306007B1
公开(公告)日：2013-09-12
申请号：KR1020120013515
申请日：2012-02-10
Applicant: 한국화학연구원
Abstract: 본 발명은 화학기상증착법을 이용하여 기판 상부에 Sb 증착막을 형성하는 단계; 및 Te 증착막을 형성하는 단계;를 교번하여 수행하는 Sb-Te계 열전박막을 증착 방법이며, Sb 증착 및 Te 증착 단계에서 플라즈마를 발생하는 Sb-Te계 열전박막의 제조방법에 관한 것이다.
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95.发明公开
公开(公告)号：KR1020130007509A
公开(公告)日：2013-01-18
申请号：KR1020120135577
申请日：2012-11-27
Applicant: 한국화학연구원
IPC: H01L31/04 , H01L31/0224 , H01B1/14
CPC classification number: Y02E10/50 , H01L31/04 , H01B1/14 , H01L31/0224
Abstract: PURPOSE: A contact formation of silicon solar cells using conductive ink with nano-sized glass frit is provided to minimize the loss of electrode material and to reduce production costs. CONSTITUTION: An emitter layer(202) is formed on the upper part of a substrate. A reflection barrier layer is formed on the emitter layer. A first conductive layer(204) is patterned in the reflection barrier layer. A second conductive layer(205) is formed in the upper surface of the first conductive layer. A conductive ink composite is used in the process for forming the second conductive layer.
Abstract translation: 目的：提供使用具有纳米尺寸玻璃料的导电油墨的硅太阳能电池的接触形成，以最小化电极材料的损失并降低生产成本。 构成：在衬底的上部形成发射极层（202）。 在发射极层上形成反射阻挡层。 在反射阻挡层中图案化第一导电层（204）。 第二导电层（205）形成在第一导电层的上表面中。 在形成第二导电层的工艺中使用导电油墨复合材料。
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Patent Agency Ranking
公开(公告)号：KR1020120127070A
公开(公告)日：2012-11-21
申请号：KR1020110045303
申请日：2011-05-13
Applicant: 한국화학연구원
CPC classification number: C01B32/194 , C01B2204/22 , C23C16/26 , H01B1/04 , H01L21/2026
Abstract: PURPOSE: Graphene and a manufacturing method of the same, a semiconductor device using the same, and a manufacturing method of the semiconductor are provided to control the electric characteristic of the graphene by generating the structural change of the graphene. CONSTITUTION: A manufacturing method of graphene controls the electric characteristic of graphene(104) by generating the structural change of the graphene. The structural change of the graphene is generated by doping nitrogen into the graphene based on nitrogen plasma treatment. The structural change of the graphene controls the electric characteristic of the graphene based on conductivity. The conductivity is controlled by the power of nitrogen plasma, the flux of nitrogen, the generating pressure of the nitrogen plasma, and the contact time of the nitrogen plasma and the graphene.
Abstract translation: 目的：提供石墨烯及其制造方法，使用该方法的半导体装置和半导体的制造方法，以通过产生石墨烯的结构变化来控制石墨烯的电特性。 构成：石墨烯的制造方法通过产生石墨烯的结构变化来控制石墨烯（104）的电特性。 石墨烯的结构变化是通过基于氮等离子体处理将氮掺杂到石墨烯中而产生的。 石墨烯的结构变化基于导电性控制石墨烯的电特性。 电导率由氮等离子体的功率，氮通量，氮等离子体的产生压力以及氮等离子体和石墨烯的接触时间来控制。
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公开(公告)号：KR1020120127069A
公开(公告)日：2012-11-21
申请号：KR1020110045302
申请日：2011-05-13
Applicant: 한국화학연구원
IPC: H01L21/027
CPC classification number: B32B43/006 , B32B2313/04 , B81C1/00492 , B81C99/0025 , C23C16/26 , C23C16/56 , H01L21/304 , Y10T156/195 , H01L21/0274 , G03F7/42
Abstract: PURPOSE: A method and apparatus for forming a graphene pattern using a stripping method are provided to easily form the graphene pattern having a uniform line width on a substrate by selectively stripping a part of a graphene layer formed on the substrate using a polymer stamp. CONSTITUTION: A graphene layer(104a) is formed on a substrate(102). A graphene stripping layer(108) is formed on a pattern surface of a polymer stamp(106) having a raised pattern. The pattern surface of the polymer stamp is attached with a target location of the graphene layer. The graphene layer attached to the raised pattern of the polymer stamp is selectively stripped from the substrate. The graphene pattern layer is formed on the substrate.
Abstract translation: 目的：提供一种使用剥离方法形成石墨烯图案的方法和装置，通过使用聚合物印模选择性地剥离在基板上形成的石墨烯层的一部分，以容易地在基板上形成具有均匀线宽的石墨烯图案。 构成：石墨烯层（104a）形成在基板（102）上。 在具有凸起图案的聚合物印模（106）的图案表面上形成石墨烯剥离层（108）。 聚合物印模的图案表面附着有石墨烯层的目标位置。 附着在聚合物印模的凸起图案上的石墨烯层从衬底中选择性剥离。 石墨烯图案层形成在基板上。
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公开(公告)号：KR1020120125046A
公开(公告)日：2012-11-14
申请号：KR1020110043089
申请日：2011-05-06
Applicant: 한국화학연구원
IPC: C07C251/12 , C07C249/02 , C07F3/00
Abstract: PURPOSE: A tridentate beta-diketiminate compound is provided to be used as a useful precursor for manufacturing strontium or barium oxide thin film and nanomaterial, and strontium or barium-containing heterometal thin film and nanomaterial. CONSTITUTION: A tridentate beta-diketiminate compound is indicated in chemical formula 1. In chemical formula 1, R^1 and R^2 is independently C1-10 linear or branched alkyl group or fluoroalkyl group, R^3 is C1-10 linear or branched alkyl group, R^4 is a linear or branched alkylene group, A is a linear or branched C1-10 alkylamine group or alkoxy group. A manufacturing method of the tridentate beta-diketiminate compound comprises a step of reacting a compound indicated in chemical formula 8 or 9 and an amine compound indicated in chemical formula 10.
Abstract translation: 目的：提供三齿β-二酮酯化合物，用作制造锶或氧化钡薄膜和纳米材料，锶或钡的异金属薄膜和纳米材料的有用前体。 构成：化学式1中表示三齿β-二酮酸酯化合物。在化学式1中，R 1和R 2独立地为C 1-10直链或支链烷基或氟代烷基，R 3为C 1-10直链或 支链烷基，R 4是直链或支链亚烷基，A是直链或支链C 1-10烷基胺基或烷氧基。 三齿β-二酮咪酯化合物的制造方法包括使化学式8或9所示的化合物与化学式10所示的胺化合物反应的步骤。
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公开(公告)号：KR101187700B1
公开(公告)日：2012-10-05
申请号：KR1020100014241
申请日：2010-02-17
Applicant: 한국화학연구원
Abstract: 본 발명은 변형된 글리신을 사용한 신규의 갈륨 화합물 및 그 제조방법에 관한 것으로, 구체적으로는 하기 화학식 1로 표시되는 갈륨 디알킬글리신 화합물에 관한 것으로 수분에 민감하지 않고 보관이 용이하며 열적 안정성이 있는 신규의 갈륨 디알킬글리신 화합물 및 그 제조 방법에 관한 것이다.
[화학식 1]
[상기 화학식 1에서, R
1 및 R
2 는 서로 독립적으로 선형 또는 분지형의 C1-C5의 알킬기이다.]-
公开(公告)号：KR1020120102985A
公开(公告)日：2012-09-19
申请号：KR1020110020943
申请日：2011-03-09
Applicant: 한국화학연구원
CPC classification number: C07F7/2232 , C23C16/18 , C23C16/407 , C23C16/45525
Abstract: PURPOSE: A novel tin compound with fluoro-ligand is provided to ensure high vapor pressure and to be used as a material for thin film deposition. CONSTITUTION: A tin alkoxide compound is denoted by chemical formula 1(Sn[O-A-OR^1]_2) or formula 2(Sn[O-CR^2R^3(CH_2)_m-OR^1]_2). The tin alkoxide compound is Sn(OCMe_2CH_2OCH_2CF_3)_2, or Sn(OCMeEtCH_2OCH_2CF_3)_2. A method for preparing the tin alkoxide compound comprises a step of reacting a tin halide compound of chemical formula 3(SnX_2) with an alkali metal salt of alcohol of chemical formula 4(M[O-A-OR^1]). A thin film containing tin compounds is prepared by MOCVD(modified chemical vapor deposition) or ALD(atomic layer deposition) using the tin alkoxide compounds as a precursor.
Abstract translation: 目的：提供具有氟配体的新型锡化合物以确保高蒸气压，并用作薄膜沉积材料。 组成：锡化合物化合物由化学式1（Sn [O-A-OR 1] 2）或式2（Sn [O-CR 2 R 2 3（CH 2）m -OR 1] 2）表示。 锡醇盐化合物是Sn（OCMe 2 CH 2 OCH 2 CF 3）2或Sn（OCMeEtCH 2 OCH 2 CF 3）2。 制备锡醇盐化合物的方法包括使化学式3（SnX_2）的卤化锡化合物与化学式4的醇的碱金属盐（M [O-A-OR 1]）反应的步骤。 使用锡醇盐化合物作为前体，通过MOCVD（改性化学气相沉积）或ALD（原子层沉积）制备含有锡化合物的薄膜。
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