Abstract:
A wiring circuit block body is formed by the followings: the step of forming a separation layer (6) over the flattened main surface of a matrix substrate (1), and then an insulation layer (7) over the separation layer (6); the step of patterning this insulation layer (7) to form a wiring layer (8) in the patterned insulation layer (7); and the step of separating this insulation layer (7) and wiring layer (8) from the matrix substrate (1) via the separation layer (6). A circuit body block (2), incorporating film-forming elements (12) (13) (17) in a wiring layer, is mounted on a base substrate (3) to constitute a wiring device. The circuit body block (2) has a semiconductor chip (62) mounted on the surface and is attached on a base substrate (64) to constitute a semiconductor device.
Abstract:
A circuit card assembly includes a substrate having longitudinally spaced first and second substrate end edges and transversely spaced top and bottom substrate surfaces. The top and/or bottom substrate surface has first, second, and third substrate regions. The first substrate region is directly laterally adjacent the first substrate side edge. The third substrate region is directly laterally adjacent the second substrate side edge. The second substrate region is located between the first and third substrate regions. At least one circuit trace is located on the selected substrate surface. The portion of the circuit trace in the first substrate region is made of only a first material. The portion of the circuit trace in the third substrate region is made of only a second material. The portion of the circuit trace in the second substrate region is made of both the first and second materials. The first material is preferably copper and the second material is preferably niobium.
Abstract:
Provided are semiconductor packages comprising at least one thin-film capacitor attached to a printed wiring board core through build-up layers, wherein a first electrode of the thin-film capacitor comprises a thin nickel foil, a second electrode of the thin-film capacitor comprises a copper electrode, and a copper layer is formed on the nickel foil. The interconnections between the thin-film capacitor and the semiconductor device provide a low inductance path to transfer charge to and from the semiconductor device. Also provided are methods for fabricating such semiconductor packages.
Abstract:
An embedded capacitor structure (100) comprising a main body; at least one embedded capacitor (102, 104) having a first electrode (108), a dielectric layer, and a second electrode (118), formed in the main body; and at least one via electrical connection (110, 112) formed in the main body; wherein at least one of the first and second electrodes (108, 118) is free from direct electrical connection to the via electrical connections (110, 112).
Abstract:
A process of fabricating a passive electrical component, such as a resistor, a capacitor, or an inductor, is provided. The process includes the step of ink-jet printing at least one electronic ink onto a substrate in a predetermined pattern. The step of ink-jet printing may include the steps of: a) selecting at least one electronic ink having at least one electrical characteristic when cured; b) determining a positional layout for a plurality of droplets of the at least one electronic ink such that, when the at least one electronic ink has been cured, the positional layout provides a desired response for the electrical component; c) printing each of the plurality of droplets of the at least one electronic ink onto the substrate according to the positional layout using an ink-jet printing process; and d) curing the at least one electronic ink.
Abstract:
The invention relates to a thin film capacitor containing (a) a substrate, (b) a first polymeric film comprising an electrically conductive polymer located on the substrate, (c) a pentoxide layer selected from the group consisting of tantalum pentoxide, or niobium pentoxide, and mixtures thereof, (d) a second polymeric film comprising an electrically conductive polymer located on the pentoxide layer.
Abstract:
A small, high−performance, low−cost semiconductor connection substrate such that the large size of the module because of discrete passive elements mounted on the substrate and the rise in mounting cost are improved, the substrate has a high reliability, the production yield is favorable, and various electronic components such as capacitors, inductors, and resistors are integrated at high density. A semiconductor connection substrate for connecting a semiconductor device to a mounting substrate such as a printed substrate is characterized by comprising an insulating substrate, one or more elements selected from capacitor elements provided on the insulating substrate and composed of electrodes having different areas and a dielectric material interposed between the electrodes, inductor elements, and resistor elements, a metallic wiring for connecting the elements, a metallic terminal part that is a part of the metallic wiring, and an organic insulating material covering the surroundings of the metallic wiring part except for the elements and metallic terminal part
Abstract:
A method is provided for forming an embedded, low profile capacitor in a multilayer printed circuit board. The method entails providing a first metal plate (16) on a dielectric substrate (14). A dielectric layer (18) of a photopolymeric material is applied onto a first region (17) of the first metal plate, surrounded by a second region (19) that is exposed. A second metal plate (24) is deposited onto the dielectric layer and the second region (19) of the first metal plate. The second plate (24) is then patterned to define an upper electrode (26) on the dielectric layer that is electrically isolated from the first metal plate. This may be accomplished by forming a trench (34) in the second metal plate above the dielectric layer. In one aspect, the resulting capacitor thus comprises a lower electrode structure (28) derived mainly from the first metal plate, a dielectric layer (20) overlying the first region of the first metal plate, and an upper electrode (26) overlying the dielectric layer. The lower metal structure also includes an extension (32) deposited onto the second region of the first metal layer about the dielectric layer and including a lip overlying a perimeter of the dielectric layer surface.
Abstract:
A double layer capacitor comprises current collectors, electrodes and an electrolyte. The capacitor (C) is manufactured with a printing technique and it is connected to other electronics (R,V) also manufactured with a printing technique. The capacitor (C) is arranged to provide power to said other electronics. Cellulose carbamate can be used in the capacitor as a binder of conductive particles or as a separator.