公开(公告)号：DE10345377A1

公开(公告)日：2005-05-04

申请号：DE10345377

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER ROLAND ,  HEDLER HARRY ,  MEYER THORSTEN

IPC: G03F3/08 ,  H01L21/48 ,  H01L23/00 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/32 ,  H01L23/367 ,  H01L23/48 ,  H01L23/49 ,  H01L23/498 ,  H01L23/50

Abstract: The present invention provides a semiconductor module having: at least one semiconductor device (10); a rigid covering device (14) over the at least one semiconductor device (10) for protecting and dissipating heat from the at least one semiconductor device (10); and a carrier device (17), which has a connection device (19), for receiving the semiconductor device (10) and the covering device (14), the at least one semiconductor device (10) being electrically coupled to the connection device (19) by means of a flexible contact device (11) via the carrier device (17) and being mechanically coupled to the covering device (14) via a contact device (15, 16). The present invention likewise provides a method for producing a semiconductor module.

公开(公告)号：DE10126568B4

公开(公告)日：2004-12-09

申请号：DE10126568

申请日：2001-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L23/13 ,  H01L23/498 ,  H05K3/32 ,  H05K1/11

公开(公告)号：DE10238582A1

公开(公告)日：2004-03-11

申请号：DE10238582

申请日：2002-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN

IPC: H01L21/60 ,  H01L23/485 ,  H01L23/498 ,  H01L23/50 ,  H01L21/66

Abstract: Integrated circuit comprises an elastically deformable protrusion (11) on a switching substrate (10), a contact unit (13) arranged on the protrusion for producing an electrical connection, and a rewiring unit (12, 14, 15) for electrically connecting an active semiconductor section of the integrated circuit to the contact unit. The rewiring unit is formed as a ring around the protrusion at the foot of the protrusion and in electrical connection with the contact unit. An Independent claim is also included for a process for the production of a composite made from a tested integrated circuit and an electrical unit.

公开(公告)号：DE10158563C1

公开(公告)日：2003-07-17

申请号：DE10158563

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  FRANKOWSKY GERD ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/68 ,  H01L23/31 ,  H01L21/58

Abstract: A process for producing a component module comprising a module carrier and a plurality of components with which contact is made on the latter, comprising the following steps: arranging separated components on a surface-adhesive film at a predefined contact-specific spacing from one another, embedding the components in a flexible material in order to form a flexible holding frame which holds the components, pulling off the film, producing contact-making elements on the exposed side of the components, performing a functional test of the components and, if necessary, repair and/or replacement of components, and fixing and making contact with the components held in the holding frame on the module carrier.

公开(公告)号：DE10157280A1

公开(公告)日：2003-06-12

申请号：DE10157280

申请日：2001-11-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  FRANKOWSKY GERD ,  HEDLER HARRY ,  IRSIGLER ROLAND ,  VASQUEZ BARBARA

IPC: H01L21/00 ,  H01L21/60 ,  H01L21/78 ,  H01L21/56

Abstract: The invention creates a method for connection of circuit units (101a-10n) which are arranged on a wafer (100), in which the wafer (100) is fitted to a first film (102a), the wafer (100) is sawn such that the circuit units (101a-101n) which are arranged on the wafer (100) are separated, the functional circuit units (101d) are picked up by means of a handling device (101) and are placed down on a second film (102b) by means of the handling device (103), so as to produce a separation distance which can be predetermined between connection contacts of the circuit units (101d).

公开(公告)号：DE10250636A1

公开(公告)日：2003-05-28

申请号：DE10250636

申请日：2002-10-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HEDLER HARRY ,  MEYER THORSTEN ,  VASQUEZ BARBARA

IPC: H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L21/78 ,  H01L23/31 ,  H01L23/485 ,  H01L23/538 ,  H01L23/50

Abstract: A conductive layer on a semiconductor chip (10) is etched to form metal lines. A portion of the conductive layer extends beyond the edge of the chip. A micromechanical device is formed on the semiconductor chip. A contact pad provided on the device surface is in electrical communication with the conductive layer. An Independent claim is also included for semiconductor structure formation method.

公开(公告)号：DE10157008A1

公开(公告)日：2003-05-28

申请号：DE10157008

申请日：2001-11-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKOWSKY GERD ,  MEYER THORSTEN

IPC: H01L23/31 ,  H01L23/485 ,  H01L23/50 ,  H01L21/66

Abstract: A semiconductor component that is suitable for wafer level packaging contains a plurality of contact elements that are elevated relative to a main body of the semiconductor component. Some of the contact elements are needed only for purposes of testing on the wafer level and should not be subsequently accessible from outside. For this purpose, the semiconductor component contains an insulating layer that covers the elevated contact elements that are provided for testing purposes but leaves the remaining contact elements uncovered. In this way, inadvertent activating of test functions on the chip is effectively prevented by simple measures, for instance by inserting only one additional fabrication step.

公开(公告)号：DE10137668A1

公开(公告)日：2002-10-17

申请号：DE10137668

申请日：2001-08-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： GEBAUER UTA ,  STRUTZ VOLKER ,  MEYER THORSTEN

IPC: H01L21/60 ,  H05K3/30 ,  H01L23/50 ,  H01L21/58

Abstract: A component comprises a substrate (3); semiconductor components (1) connected to the substrate via contacts (2) which are arranged between the substrate and the semiconductor components; and supporting bodies (4, 5, 6) arranged between a prescribed region of a semiconductor component and the substrate. An Independent claim is also included for the production of a component. Preferred Features: Several prescribed regions are arranged on the periphery of a semiconductor component and supported by several supporting bodies. The supporting bodies are made from a metal, polymer and/or a ceramic material.

公开(公告)号：DE102010064679B3

公开(公告)日：2023-01-12

申请号：DE102010064679

申请日：2010-03-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MEYER THORSTEN ,  DECKER STEFAN ,  KRISCHKE NORBERT ,  KADOW CHRISTOPH

IPC: H01L27/07 ,  H01L21/266 ,  H01L21/8234 ,  H01L23/62 ,  H01L27/088 ,  H01L29/06

Abstract: Integrierte Schaltung (100), die aufweist:einen ersten FET (110) und einen zweiten FET (120),wobei wenigstens ein Element aus Source, Drain, Gate des ersten FETs (110) elektrisch mit dem entsprechenden Element aus Source, Drain, Gate des zweiten FETs (120) verbunden ist,wenigstens ein weiteres Element aus Source, Drain, Gate des ersten FETs (110) und das entsprechende weitere Element aus Source, Drain, Gate des zweiten FETs (120) mit einem Schaltkreiselement (130) verbunden sind; undeine Dotierstoffkonzentration eines Bodys entlang eines Kanals des ersten (110) und zweiten (120) FETs jeweils einen Peak an einer Position (Z1, Z2, Z3, Z4, Z5, Zmax) innerhalb des Kanals aufweist, und ein Profil der Dotierstoffkonzentration des Bodys jeweils des ersten (110) und zweiten (120) FETs an einem pn-Übergang zwischen dem Body und der Source in Richtung zur Source hin abfällt.

公开(公告)号：DE102017210654B4

公开(公告)日：2022-06-09

申请号：DE102017210654

申请日：2017-06-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FEHLER ROBERT ,  HAUBNER GERHARD ,  HARTNER WALTER ,  NIESSNER MARTIN RICHARD ,  GEISSLER CHRISTIAN ,  ARCIONI FRANCESCA ,  WOJNOWSKI MACIEJ ,  MEYER THORSTEN

IPC: H01L23/48 ,  H01L21/60 ,  H01L23/32

Abstract: Halbleitervorrichtung, die Folgendes umfasst:ein Substrat (26);eine erste dielektrische Schicht (25), die auf dem Substrat (26) angeordnet ist;ein erstes Metallschicht-Pad (23.1), das auf der ersten dielektrischen Schicht (25) angeordnet ist;eine zweite dielektrische Schicht (24), die auf dem ersten Metallschicht-Pad (23.1) und auf der ersten dielektrischen Schicht (25) angeordnet ist, wobei die zweite dielektrische Schicht (24) eine Öffnung umfasst;ein zweites Metallschicht-Pad (22), das auf dem ersten Metallschicht-Pad (23.1) in der Öffnung der zweiten dielektrischen Schicht (24) angeordnet ist;eine Lotkugel (21), die auf dem zweiten Metallschicht-Pad (22) angeordnet ist;eine Umverdrahtungsleitung (23.3), wobei das erste Metallschicht-Pad (23.1) ein Umverdrahtungs-Pad ist und ein Teil der Umverdrahtungsleitung (23.3) oder integral mit dieser ist;wobei das erste Metallschicht-Pad (23.1) wenigstens einen Hohlraum (23.11, 33.11, 43.11, 53.11) umfasst, wobei der Hohlraum (23.11, 33.11, 43.11, 53.11) wenigstens teilweise lateral außerhalb des zweiten Metallschicht-Pads (22) angeordnet ist und wobei der Hohlraum (23.11, 33.11, 43.11, 53.11) als ein Schlitz gebildet ist, wobei der Schlitz eine längliche Form umfasst, die entlang eines kreisförmigen Bogensegments angeordnet ist,wobei der wenigstens eine Hohlraum (23.11, 33.11, 43.11, 53.11) derart gebildet und angeordnet ist, dass ein innerer Teil des ersten Metallschicht-Pads (23.1) durch zwei Torsionsfedern oder durch eine Auslegerfeder aufgehängt ist, undwobei das Substrat (26) einen Halbleiter-Die umfasst, der Halbleiter-Die ein Kontakt-Pad umfasst und das Kontakt-Pad mittels der Umverdrahtungsleitung (23.3) wenigstens teilweise mit dem ersten Metallschicht-Pad (23.1) verbunden ist.