公开(公告)号：WO01083674A1

公开(公告)日：2001-11-08

申请号：PCT/US2001/014257

申请日：2001-05-02

IPC: G01N33/483 ,  B01L3/00 ,  B81C1/00 ,  C12Q1/68 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N27/327 ,  G01N27/333 ,  G01N27/403 ,  G01N27/416 ,  G01N27/48 ,  G01N27/49 ,  G01N33/487 ,  G01N37/00 ,  C12M1/34 ,  C12N11/00 ,  G01N27/00 ,  G01N31/00 ,  G01N33/00 ,  G01N33/48 ,  G01N33/53 ,  G01N33/543

CPC classification number: B01L3/5088 ,  B01J2219/00317 ,  B01J2219/00497 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/0061 ,  B01J2219/00612 ,  B01J2219/00617 ,  B01J2219/00619 ,  B01J2219/00621 ,  B01J2219/0063 ,  B01J2219/00637 ,  B01J2219/00653 ,  B01J2219/00659 ,  B01J2219/00702 ,  B01J2219/00722 ,  B01J2219/00725 ,  B81C2201/0133 ,  B82Y30/00 ,  C12Q1/68 ,  C12Q1/6876 ,  C12Q2600/156 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N27/3277

Abstract: A microelectromechanical system (MEMS) and integrated circuit based biosensor (210) capable of sensing or detecting various ionic molecules and macromolecules (DNA, RNA or protein). The MEMS based biosensor (210) may utilize a hybridization and enzyme amplification scheme and an electrochemical detection scheme for sensitivity improvement and system miniaturization. The biosensor or biosensors (210) are incorporated on a single substrate (200). Preferably, the biosensor system comprises at least two electrodes. The electrodes may comprise a working electrode (220), a reference electrode (240), and a counter (auxiliary) electrode (230). The biosensor or biosensors (210) also provide an apparatus and method for confinement of reagent and/or solution in the biosensor or biosensors (210) using surface tension at small scale. The confinement system provides controlled contacts between the reagent(s) and/or solution(s) with the components (i.e., electrodes) of the biosensor or biosensors (210) using controllable surface properties and surface tension forces. The confinement system allows for incorporation of the biosensor or biosensors (210) into a portable or handheld device and is immune to shaking and/or flipping. The invention also provides for a biosensor (210) and/or sensors that are integrated with integrated circuit (IC) technologies. Preferably, the entire sensor system or systems are fabricated on a single IC substrate (200) or chip and no external component and/or instrument is required for a complete detection system or systems. Preferably, the sensor system or systems are fabricated using the IC process on a silicon substrate (200).

Abstract translation: 一种能够感测或检测各种离子分子和大分子（DNA，RNA或蛋白质）的微机电系统（MEMS）和基于集成电路的生物传感器（210）。 基于MEMS的生物传感器（210）可以利用杂交和酶扩增方案和用于灵敏度改进和系统小型化的电化学检测方案。 生物传感器或生物传感器（210）被结合在单个基板（200）上。 优选地，生物传感器系统包括至少两个电极。 电极可以包括工作电极（220），参考电极（240）和计数器（辅助电极）230。 生物传感器或生物传感器（210）还提供了使用小规模的表面张力限制生物传感器或生物传感器（210）中的试剂和/或溶液的装置和方法。 限制系统使用可控的表面性质和表面张力提供试剂和/或溶液与生物传感器或生物传感器（210）的组分（即电极）之间的受控接触。 限制系统允许将生物传感器或生物传感器（210）并入便携式或手持式装置中，并且不受摇动和/或翻转的影响。 本发明还提供了与集成电路（IC）技术集成的生物传感器（210）和/或传感器。 优选地，整个传感器系统或系统制造在单个IC衬底（200）或芯片上，并且对于完整的检测系统或系统不需要外部部件和/或仪器。 优选地，使用在硅衬底（200）上的IC工艺来制造传感器系统或系统。

公开(公告)号：WO00038209A1

公开(公告)日：2000-06-29

申请号：PCT/JP1999/007137

申请日：1999-12-20

IPC: H01H11/00 ,  B81B3/00 ,  B81C1/00 ,  B81C3/00 ,  H01H1/20 ,  H01H11/06 ,  H01H59/00

CPC classification number: H01H59/0009 ,  B81B2201/014 ,  B81B2201/016 ,  B81C1/0015 ,  B81C2201/0133 ,  H01H1/20

Abstract: A micromachine switch comprises a support member having a predetermined height from the surface of a base, a flexible cantilevered arm projecting from the support member parallel to the surface of the base and facing the gap between two signal lines, a contact electrode provided to the cantilevered arm and facing the gap, a lower electrode provided on the base and facing a part of the cantilevered arm, and an intermediate electrode provided to the cantilevered arm and facing the lower electrode. The micromachine switch operates with a driving voltage lower than that of prior art. The breakdown voltage characteristic of the insulating film is improved.

Abstract translation: 微机械开关包括从基座的表面具有预定高度的支撑构件，从支撑构件平行于基座的表面突出并面向两条信号线之间的间隙的柔性悬臂，提供给悬臂的接触电极 并且面向所述间隙，设置在所述基座上并且面向所述悬臂的一部分的下电极，以及设置到所述悬臂并面向所述下电极的中间电极。 微机械开关的驱动电压低于现有技术。 绝缘膜的击穿电压特性提高。

公开(公告)号：EP3326964A1

公开(公告)日：2018-05-30

申请号：EP17172106.1

申请日：2017-05-20

Applicant: STMicroelectronics S.r.l.

Inventor： DUQI, Enri ,  BALDO, Lorenzo ,  GIUSTI, Domenico

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81B7/0051 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/0133 ,  B81C2203/032 ,  B81C2203/035 ,  B81C2203/0792

Abstract: Described herein is an integrated device (1), having: a first die (2); a second die (6) coupled in a stacked way on the first die (2) along a vertical axis (z); a coupling region (16) arranged between facing surfaces (2a, 6a) of the first die (2) and of the second die (6), which face one another along the vertical axis (z) and lie in a horizontal plane (xy) orthogonal to the vertical axis (z), for mechanical coupling of the first and second dies; electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, aligned in pairs along the vertical axis (z); and conductive regions (18) arranged between the pairs of electrical-contact elements (17) carried by the facing surfaces (2a, 6a) of the first and second dies, for their electrical coupling. Supporting elements (20) are arranged at the facing surface (2a; 6a) of at least one between the first and second dies and elastically support respective electrical-contact elements.

公开(公告)号：EP3247134A1

公开(公告)日：2017-11-22

申请号：EP16206878.7

申请日：2016-12-23

Applicant: STMicroelectronics S.r.l.

Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

公开(公告)号：EP3196617A1

公开(公告)日：2017-07-26

申请号：EP17150950.8

申请日：2017-01-11

Applicant: Rosemount Aerospace Inc.

Inventor： ZHANG, Weibin ,  POTASEK, David P.

IPC: G01L9/00 ,  G01L19/06

CPC classification number: B81B3/0021 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0132 ,  B81C2201/0133 ,  G01L9/0048 ,  G01L19/0618

Abstract: A method for producing a silicon based MEMS pressure sensor includes forming a cavity in a first (100) surface of a silicon wafer with first and second parallel (100) surfaces wherein the angle between the walls of the first cavity and the first (100) surface where they intersect the first (100) surface are greater than 90 degrees and the remaining material between the bottom of the cavity and the second parallel (100) surface comprises a flexible diaphragm. The method also includes forming a backing wafer, having a through hole, and bonding the silicon wafer to the backing wafer such that the hole in the backing wafer matches up with the cavity in the second side of the (100) silicon wafer. A dielectric layer is formed on the second side of the (100) silicon wafer and a sensing element is formed on the dielectric layer to detect pressure induced deflection of the silicon diaphragm.

Abstract translation: 一种用于制造硅基MEMS压力传感器的方法包括：在具有第一和第二平行（100）表面的硅晶片的第一（100）表面中形成空腔，其中第一空腔的壁和第一（100） 它们与第一（100）表面相交的表面大于90度，并且腔体的底部和第二平行（100）表面之间的剩余材料包括柔性隔膜。 该方法还包括形成具有通孔的背衬晶片，并且将硅晶片结合到背衬晶片，使得背衬晶片中的孔与（100）硅晶片的第二侧中的空腔匹配。 在（100）硅晶片的第二侧上形成介电层，并且在介电层上形成感测元件以检测硅膜的压力引起的偏转。

公开(公告)号：EP3060290A1

公开(公告)日：2016-08-31

申请号：EP14803185.9

申请日：2014-10-15

Applicant: Swansea University

Inventor： LUI, Yufei ,  GUY, Owen

IPC: A61M37/00 ,  B81C1/00

CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0159 ,  B81C2201/0176 ,  B81C2201/0181 ,  C23C16/402

Abstract: A method of forming microneedles where through a series of coating and etching processes microneedles are formed from a surface as an array. The microneedles have a bevelled end and bore which are formed as part of the process with no need to use a post manufacturing process to finish the microneedle.

公开(公告)号：EP2995586A1

公开(公告)日：2016-03-16

申请号：EP15183869.5

申请日：2015-09-04

Applicant: InvenSense, Inc.

Inventor： DANEMAN, Michael J. ,  ASSADERAGHI, Fariborz

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B7/0025 ,  B81B7/007 ,  B81B2207/015 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00801 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/053 ,  B81C2203/0735

Abstract: Systems and methods that protect CMOS layers from exposure to a release chemical are provided. The release chemical is utilized to release a micro-electromechanical (MEMS) device integrated with the CMOS wafer. Sidewalls of passivation openings created in a complementary metal-oxide-semiconductor (CMOS) wafer expose a dielectric layer of the CMOS wafer that can be damaged on contact with the release chemical. In one aspect, to protect the CMOS wafer and prevent exposure of the dielectric layer, the sidewalls of the passivation openings can be covered with a metal barrier layer that is resistant to the release chemical. Additionally or optionally, an insulating barrier layer can be deposited on the surface of the CMOS wafer to protect a passivation layer from exposure to the release chemical.

Abstract translation: 系统和方法做了保护层CMOS暴露于化学版本提供。 释放化学被用来释放与CMOS晶片集成微机电（MEMS）装置。 在互补金属氧化物半导体（CMOS）晶片中创建钝化开口的侧壁暴露所述CMOS晶片的介电层也可以与所述化学释放接触而损坏。 在一个方面，以保护CMOS晶片和防止介电层的曝光，钝化开口的侧壁可覆盖有一金属阻挡层所做的是在化学释放具有抗性。 另外地或可选地，为了绝缘势垒层可以在CMOS晶片的表面上沉积保护钝化层免于暴露于化学释放。

公开(公告)号：EP2485243A1

公开(公告)日：2012-08-08

申请号：EP12153896.1

申请日：2012-02-03

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Danel, Jean-Sébastien ,  Duraffourg, Laurent ,  Progent, Frédéric ,  Tassetti, Charles-Marie

IPC: H01J49/40 ,  B81B7/02

CPC classification number: H01J49/405 ,  B05D3/10 ,  B81C1/00119 ,  B81C2201/0133 ,  B81C2203/031 ,  H01J49/0018

Abstract: L'invention concerne un micro-réflectron pour spectromètre de masse à temps de vol comprenant un substrat (3100, 5400), et, intégrés au volume du substrat, des moyens (5400) d'application d'un gradient de potentiel dans un volume adapté à constituer une zone de vol des ions (3300 ), caractérisé en ce que lesdits moyens d'application comprennent au moins deux électrodes de polarisation et une paroi en au moins un matériau résistif adaptée à être polarisée entre ces électrodes en sorte de générer un gradient continu de potentiel en assurant elle-même la fonction de réflectron, cette zone de vol, ces électrodes et cette paroi étant obtenues par la technologie des systèmes micro-électromécaniques (MEMS) et ce micro-réflectron ayant une épaisseur inférieure à 5 millimètres tandis que ses autres dimension sont inférieures à 10 fois cette épaisseur.

Abstract translation: 微反射器具有电位梯度施加单元，例如， 电阻层（5400），用于在形成离子飞行区的基底体积中施加电位梯度，例如 管（3300），其中微反射器的厚度小于5mm，其他尺寸小于厚度的10倍。 该单元包括由电阻材料制成的壁，并且在金属极化电极（5210）之间极化，以产生连续的电势梯度，同时提供反射器功能。 通过微机电系统技术获得区域，电极和壁。 还包括以下独立权利要求：（1）质谱仪（2）微反射镜的制造方法。

公开(公告)号：EP1383707B1

公开(公告)日：2011-04-13

申请号：EP02715619.9

申请日：2002-01-11

Applicant: International Business Machines Corporation

Inventor： DESPONT, Michel ,  DRECHSLER, Ute ,  MAGNUSON, Roy, H.

IPC: B81C1/00

CPC classification number: H01L21/30604 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C1/00801 ,  B81C2201/0107 ,  B81C2201/0114 ,  B81C2201/0133 ,  C23F13/14

Abstract: A method for protecting a material of a microstructure comprising said material and a noble metal layer (8) against undesired galvanic etching during manufacture comprises forming on the structure a sacrificial metal layer (12) having a lower redox potential than said material, the sacrificial metal layer (12) being electrically connected to said noble metal layer (8).

公开(公告)号：EP1764830A3

公开(公告)日：2009-02-18

申请号：EP05447238.6

申请日：2005-10-21

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

Inventor： Beyer, Gerald

IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/31111 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0133 ,  H01L21/31633 ,  H01L21/76224 ,  H01L21/76816

Abstract: The present invention relates to a method for the production of very small trenches in semiconductor devices.
The formation of these small trenches is based on chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in said first dielectric layer are converted locally and become etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.
The small trenches obtained by chemically changing the properties of a dielectric layer can be used as test vehicle to study barrier deposition, copper plating and seedlayer deposition within very small trenches (order 10-30 nm).