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公开(公告)号：KR1020160148798A
公开(公告)日：2016-12-27
申请号：KR1020150085217
申请日：2015-06-16
Applicant: 삼성전자주식회사
IPC: H01L21/02 , H01L21/67 , H01L21/683
CPC classification number: H01L22/26 , B01F3/088 , B01F15/0022 , H01L21/02057 , H01L21/67017 , H01L21/67051
Abstract: 본발명의일 실시예에따른기판처리장치는, 공정챔버내 지지유닛에지지된기판으로제 1 액과제 2 액이혼합된약액을공급하는노즐유닛, 상기노즐유닛으로상기약액을공급하는약액공급장치, 그리고상기약액공급장치를제어하는제어기를포함하되, 상기약액공급장치는, 복수의케미컬들을혼합하여상기제 1 액을생성하는혼합탱크, 상기혼합탱크로부터상기제 1 액을공급받고상기약액을생성하는공급탱크, 상기혼합탱크와상기공급탱크를연결하는연결라인, 그리고상기연결라인상에설치된밸브및 펌프를포함하되, 상기공급탱크로상기제 1 액을공급할때, 스트로크당 설정공급량을공급하도록상기펌프를제어한다.
Abstract translation: 公开了一种基板处理系统，其包括：喷嘴，其将含有第一和第二溶液的混合物的化学溶液供给到负载在处理室的支撑体上的基板上;化学溶液供给系统，用于向喷嘴提供化学溶液;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐，从混合罐接收第一溶液并产生化学溶液的供应罐，将混合罐连接到供应罐的连接管线 ，以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。
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公开(公告)号：KR1020160028794A
公开(公告)日：2016-03-14
申请号：KR1020140117800
申请日：2014-09-04
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/324 , H01L21/02
CPC classification number: B23K26/146 , B08B3/10 , B08B7/0071 , C11D11/0047 , H01L21/67028 , H01L21/6708 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L21/67253 , H01L21/68785 , H01L21/68792
Abstract: 스팟히터및 이를이용한웨이퍼클리닝장치가제공된다. 상기웨이퍼클리닝장치는웨이퍼가안착되고, 상기웨이퍼의아래에서상기웨이퍼를가열하는히터척, 상기웨이퍼의상면에상기웨이퍼의상면을식각하는약액을분사하는약액노즐및 상기웨이퍼의상면의스팟(spot)을가열하는스팟히터를포함한다.
Abstract translation: 提供点加热器和使用其的晶片清洁装置。 晶片清洗装置包括：加热器卡盘，用于安置晶片并从其底部加热晶片; 用于将晶片的顶表面蚀刻到其上的液体喷嘴喷射液体; 以及被配置为加热晶片顶表面上的点的点加热器。 本发明的目的是提供能够使晶片的蚀刻速率变化均匀的晶片清洁装置。
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公开(公告)号：KR1020150116017A
公开(公告)日：2015-10-15
申请号：KR1020140040043
申请日：2014-04-03
Applicant: 삼성전자주식회사
IPC: H01L21/302
CPC classification number: H01L21/02101 , H01L21/02057 , H01L21/76224 , H01L27/10852 , H01L27/11582
Abstract: 반도체소자의세정및 건조방법및 이를이용하는반도체소자의제조방법을제공한다. 세정및 건조방법은기판상에패턴을형성하고, 패턴이형성된기판을세정액을이용하여세정하며, 세정액이잔류하는패턴이형성된기판을건조챔버내에로딩하고, 패턴이형성된기판에잔류하는세정액의농도가 2중량%이하로희석되도록건조챔버로초임계상태의이산화탄소(CO)를주입하는것을포함한다.
Abstract translation: 本发明提供了一种半导体器件的清洁和干燥方法，以及使用其制造半导体的方法。 清洗和干燥方法在基材上形成图案，使用清洁溶液清洗具有图案的基板，将具有图案的基板用剩余的清洁溶液装载到干燥室，并将超临界状态的CO 2插入干燥 将剩余的清洗液的浓度稀释至2重量％以下。
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公开(公告)号：KR101527535B1
公开(公告)日：2015-06-10
申请号：KR1020080103197
申请日：2008-10-21
Applicant: 삼성전자주식회사
IPC: H01L21/324 , H01L21/3105
CPC classification number: H01L21/823842 , H01L21/82345 , H01L21/823462 , H01L21/823857
Abstract: 반도체소자및 그형성방법을제공한다. 이방법은기판상에단일층또는다층의금속산화막을형성하고, 금속산화막상에희생산화막을형성한다. 기판에열처리공정을수행한다. 열처리공정의공정온도에서, 희생산화막의형성자유에너지는금속산화막의형성자유에너지보다크다.
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公开(公告)号：KR1020110034816A
公开(公告)日：2011-04-06
申请号：KR1020090092258
申请日：2009-09-29
Applicant: 삼성전자주식회사
IPC: H01L21/8247 , H01L27/115
CPC classification number: H01L27/11578 , H01L27/11556 , H01L27/11582 , H01L21/28282 , H01L27/11524 , H01L27/11551
Abstract: PURPOSE: A vertical NAND charge trap flash memory device and a manufacturing method thereof are provided to highly integrate a memory device by vertically connecting cell transistors with a charge trap layer in series. CONSTITUTION: A single crystal semiconductor channel(150) is vertically formed on a semiconductor substrate(100). A GSL(Ground Source Line) electrode(115) is adjacent to the semiconductor substrate and surrounds a signal crystal semiconductor channel. A tunnel oxide layer(145) surrounds the channel side of a single crystal semiconductor filler shape. First to n+1 interlayer insulation layers(120a,120b,120c,120d,120e) are formed on the GSL electrode. A charge trap layer(170) is formed between the first to n+1 interlayer insulation layers.
Abstract translation: 目的：提供垂直NAND电荷陷阱闪存器件及其制造方法，以通过将电池晶体管与电荷陷阱层串联连接来高度集成存储器件。 构成：在半导体衬底（100）上垂直形成单晶半导体沟道（150）。 GSL（地源线）电极（115）与半导体衬底相邻并且包围信号晶体半导体通道。 隧道氧化物层（145）围绕单晶半导体填料形状的沟道侧。 在GSL电极上形成第一至第n + 1层间绝缘层（120a，120b，120c，120d，120e）。 在第一至第n + 1层间绝缘层之间形成电荷陷阱层（170）。
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Patent Agency Ranking
公开(公告)号：KR1020090038590A
公开(公告)日：2009-04-21
申请号：KR1020070103959
申请日：2007-10-16
Applicant: 동우 화인켐 주식회사 , 삼성전자주식회사
CPC classification number: G03F7/425 , G03F1/103 , G03F7/063 , G03F7/30 , G03F7/32 , G03F7/34 , G03F7/422
Abstract: A photoresist stripper composition and a process of stripping photoresist by using the same are provided to cure or strip photoresist changed into a polymer after ion injection process and high temperature etching. A photoresist stripper composition comprises a mixture of sulfuric acid solution and hydrogen peroxide solution in which the weight ratio of pure sulfuric acid and pure hydrogen peroxide is 1~10,000:1; and an ammonium salt compound. The ammonium salt compound is a mixture of at least one or two selected from the group consisting of ammonium phosphate, ammonium sulfate, ammonium nitrate, ammonium borate, ammonium persulfate, ammonium citrate, ammonium oxalate, ammonium formate and ammonium carbonate.
Abstract translation: 提供光致抗蚀剂剥离剂组合物和通过使用其来剥离光致抗蚀剂的方法以在离子注入工艺和高温蚀刻之后固化或剥离变成聚合物的光致抗蚀剂。 光致抗蚀剂组合物包括硫酸溶液和过氧化氢溶液的混合物，其中纯硫酸和纯过氧化氢的重量比为1〜10,000:1; 和铵盐化合物。 铵盐化合物是选自磷酸铵，硫酸铵，硝酸铵，硼酸铵，过硫酸铵，柠檬酸铵，草酸铵，甲酸铵和碳酸铵中的至少一种或两种以上的混合物。
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公开(公告)号：KR1020070113096A
公开(公告)日：2007-11-28
申请号：KR1020070001514
申请日：2007-01-05
Applicant: 삼성전자주식회사 , 부경대학교 산학협력단
IPC: H01L21/302
Abstract: An etching, cleaning and drying method using supercritical fluid is provided to eliminate etch byproducts while preventing a lower electrode from collapsing in a process for fabricating a capacitor constituting a memory cell of a DRAM device. A material is formed(S10). The material layer is etched by using supercritical carbon dioxide in which etching chemical is melted(S11). Etch byproducts generated from a reaction of the material layer and the etch chemical are eliminated by using supercritical carbon dioxide in which cleaning chemical is melted(S12). The process for etching the material layer and the process for removing the etch byproducts can be continuously performed in the same process chamber in a critical point of carbon dioxide or higher.
Abstract translation: 提供了使用超临界流体的蚀刻，清洁和干燥方法以消除蚀刻副产物，同时防止在用于制造构成DRAM器件的存储器单元的电容器的制造工艺中下电极塌缩。 形成材料（S10）。 通过使用其中蚀刻化学品熔化的超临界二氧化碳蚀刻材料层（S11）。 通过使用其中清洗化学品熔化的超临界二氧化碳来消除由材料层和蚀刻化学品的反应产生的蚀刻副产物（S12）。 用于蚀刻材料层的方法和用于除去蚀刻副产物的方法可以在二氧化碳或更高的临界点的相同处理室中连续进行。
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公开(公告)号：KR100744145B1
公开(公告)日：2007-08-01
申请号：KR1020060074316
申请日：2006-08-07
Applicant: 삼성전자주식회사
IPC: H01L21/304
Abstract: An apparatus and method for processing wafers using supercritical fluids is provided to improve the uniformity of processed wafer by sequentially processing the wafer in plural chambers one by one. A fluid supply unit(200) has a first supply part(210) for supplying a first fluid(212) of a supercritical state to a wafer processing unit(100) and a second supply part(220) for supplying a mixture of the first fluid and a second fluid(214) to the wafer processing unit. First supply lines(230) are connected to the first supply part and chambers, and second supply lines(240) are connected to the second supply part and the chambers. First valves(232) are installed in the first supply lines, and second valves(234) are installed in the second supply lines.
Abstract translation: 提供了一种使用超临界流体处理晶片的设备和方法，以通过在多个腔室中逐个处理晶片来提高处理晶片的均匀性。 流体供应单元（200）具有用于向晶片处理单元（100）供应超临界状态的第一流体（212）的第一供应部分（210）和用于供应第一流体（212）的混合物的第二供应部分（220） 流体和第二流体（214）到晶片处理单元。 第一供应管线（230）连接到第一供应部分和腔室，第二供应管线（240）连接到第二供应部分和腔室。 第一阀（232）安装在第一供应管线中，第二阀（234）安装在第二供应管线中。
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公开(公告)号：KR100660863B1
公开(公告)日：2006-12-26
申请号：KR1020050030429
申请日：2005-04-12
IPC: H01L21/304
Abstract: A cleaning solution and a method for forming a metal pattern of a semiconductor device are provided to remove completely a hard polymer by using a mixed solution containing acetic acid, inorganic acid, fluoride compound, and deionized water. A metallic film made of Ru is formed on a substrate(10). A TiN layer is formed on the metallic film. A TiN pattern and a metallic pattern(20a) are formed on the resultant structure by performing selectively a dry etching process on the TiN layer and the metallic film. The by-products due to the etching process are removed from a peripheral region of the metallic pattern without the damage of the TiN pattern by performing a cleaning process on the resultant structure using a mixed solution containing acetic acid, inorganic acid, fluoride compound, a corrosion inhibitor, deionized water.
Abstract translation: 提供了一种用于形成半导体器件的金属图案的清洁溶液和方法，以通过使用含有乙酸，无机酸，氟化合物和去离子水的混合溶液完全除去硬质聚合物。 在基板（10）上形成由Ru构成的金属膜。 在金属膜上形成TiN层。 TiN图案和金属图案（20a）通过在TiN层和金属膜上选择性地执行干法蚀刻工艺而形成在所得结构上。 通过使用含有乙酸，无机酸，氟化合物，无机酸，氟化合物，二氧化碳和氧化剂的混合溶液对所得结构进行清洁处理，由蚀刻处理产生的副产物从金属图案的周边区域被去除而没有TiN图案的损坏 缓蚀剂，去离子水。
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