公开(公告)号：GB2517324A

公开(公告)日：2015-02-18

申请号：GB201419648

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  C09D133/00 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy- containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

公开(公告)号：GB2511665A

公开(公告)日：2014-09-10

申请号：GB201408327

申请日：2012-11-02

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HUANG WU-SONG ,  LIU SEN ,  HOLMES STEVEN ,  BREYTA GREGORY

IPC: G03F7/004 ,  G03F7/028 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027

Abstract: The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.

公开(公告)号：GB2487309A

公开(公告)日：2012-07-18

申请号：GB201201714

申请日：2010-10-19

Applicant: IBM

Inventor： DORIS BRUCE ,  ZHANG YING ,  CHENG KANGGUO ,  HOLMES STEVEN ,  HUA XUEFENG

IPC: H01L21/033 ,  H01L21/308

Abstract: A method for fabrication of features for an integrated circuit includes patterning a mandrel layer to include structures having at least one width on a surface of an integrated circuit device. Exposed sidewalls of the structures are reacted to integrally form a new compound in the sidewalls such that the new compound extends into the exposed sidewalls by a controlled amount to form pillars. One or more layers below the pillars are etched using the pillars as an etch mask to form features for an integrated circuit device.

公开(公告)号：AT552533T

公开(公告)日：2012-04-15

申请号：AT06793213

申请日：2006-09-05

Applicant: IBM

Inventor： HOLMES STEVEN ,  FURUKAWA TOSHIHARU ,  KOBURGER CHARLES ,  MOUMEN NAIM

IPC: G03F7/20 ,  G03F7/11

Abstract: An immersion lithography system is provided which includes an optical source operable to produce light having a nominal wavelength and an optical imaging system. The optical imaging system has an optical element in an optical path from the optical source to an article to be patterned thereby. The optical element has a face which is adapted to contact a liquid occupying a space between the face and the article. The optical element includes a material which is degradable by the liquid and a protective coating which covers the degradable material at the face for protecting the face from the liquid, the protective coating being transparent to the light, stable when exposed to the light and stable when exposed to the liquid.

公开(公告)号：AT504946T

公开(公告)日：2011-04-15

申请号：AT05707994

申请日：2005-02-10

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK ,  HOLMES STEVEN ,  HORAK DAVID ,  KOBURGER CHARLES ,  MITCHELL PETER ,  NESBIT LARRY

IPC: H01L51/05 ,  G11C13/02 ,  H01L21/335 ,  H01L21/336 ,  H01L27/28 ,  H01L29/06 ,  H01L29/12 ,  H01L29/772 ,  H01L51/30 ,  H01L51/40

Abstract: Carbon nanotube field effect transistors, arrays of carbon nanotube field effect transistors, device structures, and arrays of device structures. A stacked device structure includes a gate electrode layer and catalyst pads each coupled electrically with a source/drain contact. The gate electrode layer is divided into multiple gate electrodes and at least one semiconducting carbon nanotube is synthesized by a chemical vapor deposition process on each of the catalyst pads. The gate electrode has a sidewall covered by a gate dielectric and at least one semiconducting carbon nanotube adjacent to the sidewall of the gate electrode. Source/drain contacts are electrically coupled with opposite ends of the semiconducting carbon nanotube to complete the device structure. Multiple device structures may be configured either as a memory circuit or as a logic circuit.

公开(公告)号：AU1510202A

公开(公告)日：2002-05-27

申请号：AU1510202

申请日：2001-11-13

Applicant: IBM

Inventor： HAKEY MARK ,  HOLMES STEVEN ,  HORAK DAVID ,  NOWAK EDWARD

IPC: H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L29/10 ,  H01L29/41 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

Abstract: An FET has a T-shaped gate. The FET has a halo diffusion self-aligned to the bottom portion of the T and an extension diffusion self aligned to the top portion. The halo is thereby separated from the extension implant, and this provides significant advantages. The top and bottom portions of the T-shaped gate can be formed of layers of two different materials, such as germanium and silicon. The two layers are patterned together. Then exposed edges of the bottom layer are selectively chemically reacted and the reaction products are etched away to provide the notch. In another embodiment, the gate is formed of a single gate conductor. A metal is conformally deposited along sidewalls, recess etched to expose a top portion of the sidewalls, and heated to form silicide along bottom portions. The silicide is etched to provide the notch.

公开(公告)号：DE112020001916T5

公开(公告)日：2022-01-13

申请号：DE112020001916

申请日：2020-06-15

Applicant: IBM

Inventor： HOLMES STEVEN ,  SADANA DEVENDRA ,  BEDELL STEPHEN

IPC: A61B5/00 ,  A61B5/291 ,  A61B5/383 ,  A61N1/05 ,  G01N21/49 ,  G01N21/55 ,  G01S17/02

Abstract: Ein Verfahren enthält ein Implantieren eines implantierbaren Biosensors innerhalb eines Probanden, wobei der implantierbare Biosensor eine Anordnung von Lichtquellen und eine Anordnung von Lichtdetektoren besitzt, um Lichtsignale auf eine Zielgewebestelle in dem Probanden zu richten, ein Erfassen mit den Lichtdetektoren der Lichtsignale, die von der Zielstelle reflektiert werden, ein Berechnen einer Umlaufausbreitungszeit für jedes der Lichtsignale und ein Vergleichen der Umlaufausbreitungszeit für jedes der Lichtsignale mit vorherigen berechneten jeweiligen Umlaufausbreitungszeiten, um ein Auftreten einer Änderung an der Zielgewebestelle zu bestimmen.

公开(公告)号：GB2517324B

公开(公告)日：2015-06-03

申请号：GB201419648

申请日：2013-06-27

Applicant: IBM

Inventor： CHEN KUANG-JUNG ,  HOLMES STEVEN ,  HUANG WU-SONG ,  KWONG RANEE WAI-LING ,  LIU SEN

IPC: G02B1/11 ,  B32B7/02 ,  C09D133/00 ,  G03F7/004

Abstract: The present invention relates to a developable bottom antireflective coating (BARC) composition and a pattern forming method using the BARC composition. The BARC composition includes a first polymer having a first carboxylic acid moiety, a hydroxy-containing alicyclic moiety, and a first chromophore moiety; a second polymer having a second carboxylic acid moiety, a hydroxy-containing acyclic moiety, and a second chromophore moiety; a crosslinking agent; and a radiation sensitive acid generator. The first and second chromophore moieties each absorb light at a wavelength from 100 nm to 400 nm. In the patterning forming method, a photoresist layer is formed over a BARC layer of the BARC composition. After exposure, unexposed regions of the photoresist layer and the BARC layer are selectively removed by a developer to form a patterned structure in the photoresist layer. The BARC composition and the pattern forming method are especially useful for implanting levels.

公开(公告)号：DE112010004884T5

公开(公告)日：2012-09-27

申请号：DE112010004884

申请日：2010-11-26

Applicant: IBM

Inventor： HOLMES STEVEN ,  COLBURN MATTHEW ,  SANDERS DANIEL PAUL ,  CHENG JOY ,  HINSBERG WILLIAM ,  KIM HO-CHEOL ,  HARRER STEFAN

IPC: G03F7/00

Abstract: Ein Verfahren zum Herstellen einer Schichtstruktur, die ein selbstorganisiertes Material umfasst, umfasst: Aufbringen einer nichtvernetzenden Fotolackschicht auf ein Substrat; strukturierendes Exponieren der Fotolackschicht gegenüber einer ersten Strahlung; gegebenenfalls Aufheizen der exponierten Fotolackschicht; Entwickeln der exponierten Fotolackschicht durch ein erstes Entwicklungsverfahren mit einem wässrigen alkalischen Entwickler, um eine strukturierte Ausgangs-Fotolackschicht zu bilden; fotochemisches, thermisches und/oder chemisches Behandeln der strukturierten Ausgangs-Fotolackschicht, um so eine behandelte strukturierte Fotolackschicht zu bilden, die nichtvernetzten behandelten Fotolack, der auf einer ersten Substratoberfläche aufgebracht ist, umfasst; Gießen einer Lösung eines orientierungslenkenden Materials in einem ersten Lösungsmittel auf die behandelte strukturierte Fotolackschicht und Entfernen des ersten Lösungsmittels, um eine orientierungslenkende Schicht zu bilden; Aufheizen der orientierungslenkenden Schicht, um einen Teil des orientierungslenkenden Materials wirkungsvoll an eine zweite Substratoberfläche zu binden; Entfernen von wenigstens einem Teil des behandelten Fotolacks und gegebenenfalls von nichtgebundenem orientierungslenkenden Material durch ein zweites Entwicklungsverfahren, um so eine Vorstruktur für die Selbstorganisation zu bilden; gegebenenfalls Aufheizen der Vorstruktur; Gießen einer Lösung eines selbstorganisationsfähigen Materials, das in einem zweiten Lösungsmittel gelöst ist, auf die Vorstruktur und Entfernen des zweiten Lösungsmittels; und Selbstorganisierenlassen des gegossenen Materials mit optionalem Aufheizen und/oder Tempern, um so die Schichtstruktur zu bilden, die das selbstorganisierte Material umfasst.

公开(公告)号：AT389242T

公开(公告)日：2008-03-15

申请号：AT05701511

申请日：2005-01-13

Applicant: IBM

Inventor： FURUKAWA TOSHIHARU ,  HAKEY MARK ,  HOLMES STEVEN ,  HORAK DAVID ,  MITCHELL PETER ,  NESBIT LARRY

IPC: H01L51/30 ,  H01L21/78 ,  H01L27/28

Abstract: Vertical field effect transistors having a channel region defined by at least one semiconducting nanotube and methods for fabricating such vertical field effect transistors by chemical vapor deposition using a spacer-defined channel. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad positioned at the base of a high-aspect-ratio passage defined between a spacer and a gate electrode. Each nanotube grows in the passage with a vertical orientation constrained by the confining presence of the spacer. A gap may be provided in the base of the spacer remote from the mouth of the passage. Reactants flowing through the gap to the catalyst pad participate in nanotube growth.