公开(公告)号：DE3382809D1

公开(公告)日：1996-10-10

申请号：DE3382809

申请日：1983-05-02

Applicant: IBM

Inventor： ITO HIROSHI ,  WILLSON CARLTON GRANT ,  FRECHET JEAN M J

IPC: C08K5/00 ,  C08F8/00 ,  C08L33/00 ,  C08L33/02 ,  G03F7/004 ,  G03F7/021 ,  G03F7/038 ,  G03F7/039 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027

公开(公告)号：DE3880823D1

公开(公告)日：1993-06-09

申请号：DE3880823

申请日：1988-12-15

Applicant: IBM

Inventor： MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  WALSH JOSEPH GREGORY ,  WILLSON CARLTON GRANT

IPC: C07C309/76 ,  C07C67/00 ,  C07C301/00 ,  G03C1/72 ,  G03C1/73 ,  G03F7/022

Abstract: Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

公开(公告)号：DE3773061D1

公开(公告)日：1991-10-24

申请号：DE3773061

申请日：1987-06-26

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  CHIONG KAOLIN N ,  CHOW MING-FEA ,  MACDONALD SCOTT ARTHUR ,  YANG JER-MING ,  WILLSON CARLTON GRANT

IPC: H01L21/027 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26 ,  G03F7/38

Abstract: The present invention is concerned with a method of converting a single resist layer into a multilayered resist. The upper portion of the single resist layer can be patternwise converted into a chemically different composition or structure having altered absorptivity toward radiation. The difference in radiation absorptivity within the patterned upper portion of the resist enables subsequent use of blanket irradiation of the resist surface to create differences in chemical solubility between areas having the altered absorptivity toward radiation and non-altered areas. The difference in chemical solubility enables wet development of the patterned resist.

公开(公告)号：DE3861251D1

公开(公告)日：1991-01-24

申请号：DE3861251

申请日：1988-02-09

Applicant: IBM

Inventor： ALLEN ROBERT DAVID ,  FRECHET JEAN M J ,  TWIEG ROBERT JAMES ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/029 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Heat stable, negative resist compositions are provided for use, particularly in deep ultraviolet light x-ray and electron beams. The composition comprises an acid generting onium salt photoinitiator, a source of polyfunctional activated aromatic rings and a source of polyfunctional carbonium ions, with at least one of said sources being a polymer.

公开(公告)号：DE3467430D1

公开(公告)日：1987-12-17

申请号：DE3467430

申请日：1984-05-16

Applicant: IBM

Inventor： CLECAK NICHOLAS JEFFRIES ,  MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  TOMPKINS TERRY CADY ,  WILLSON CARLTON GRANT

IPC: G03F7/20 ,  C07D213/77 ,  G03C1/72 ,  G03C5/08 ,  G03F7/008 ,  G03F7/016 ,  G03F7/022 ,  G03F7/039 ,  H01L21/027 ,  G03F7/08

Abstract: A lithographic resist for use with deep ultra-violet radiation comprising an acidic resin and a diazohomotetramic acid sensitizer.

公开(公告)号：DE3063170D1

公开(公告)日：1983-06-16

申请号：DE3063170

申请日：1980-10-15

Applicant: IBM

Inventor： CLECAK NICHOLAS JEFFRIES ,  GRANT BARBARA DIANNE ,  WILLSON CARLTON GRANT

IPC: G03C1/72 ,  C08K5/1575 ,  C08L61/00 ,  C08L61/04 ,  C08L61/06 ,  G03C1/00 ,  G03F7/004 ,  G03F7/016 ,  G03F7/022 ,  G03F7/038 ,  G03F7/26 ,  H01L21/26 ,  G03F7/02 ,  G03F7/08 ,  G03C1/68

Abstract: The invention relates to a lithographic resist composition for use in a method of forming a film (17) on a substrate (11) comprising the steps of providing a deposition mask (10) of the resist composition on the substrate (11), exposing a selected portion of the mask to ultra-violet rays, dissolving the exposed portion with aqueous alkali to form an aperture (15) with negative slope or overhang, depositing on said substrate (11) through the aperture (15) said film (17) and removing the deposition mask (10). The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: wherein R1 is C1 to C20 alkyl or aryl, R2 is H, C1 to C20 alkyl or aryl, or together R1 and R2 are cycloalkyl, A is N or H.

公开(公告)号：AU8189882A

公开(公告)日：1982-12-02

申请号：AU8189882

申请日：1982-03-25

Applicant: IBM

Inventor： JAIN KANTILAL ,  WILLSON CARLTON GRANT

IPC: H01L21/027 ,  G03F7/20 ,  H01L21/30 ,  H01S3/30 ,  G03F7/02 ,  H01S3/22

公开(公告)号：DE69301999D1

公开(公告)日：1996-05-02

申请号：DE69301999

申请日：1993-11-22

Applicant: IBM

Inventor： CAMERON JAMES FIELD ,  FRECHET JEAN M J ,  LEUNG MAN-KIT ,  NIESERT CLAUS-PETER ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: Provided is an improved lithographic photoresist composition comprising a photosensitive base generator. The composition is useful in the manufacture of integrated circuits.

公开(公告)号：DE3880823T2

公开(公告)日：1993-10-28

申请号：DE3880823

申请日：1988-12-15

Applicant: IBM

Inventor： MCKEAN DENNIS RICHARD ,  MILLER ROBERT DENNIS ,  WALSH JOSEPH GREGORY ,  WILLSON CARLTON GRANT

IPC: C07C309/76 ,  C07C67/00 ,  C07C301/00 ,  G03C1/72 ,  G03C1/73 ,  G03F7/022

Abstract: Esters of 1-oxo-2-diazo-naphthalene sulfonic acid wherein the sulfonic acid group is at either the 4 or the 5 position of a hydroxymethyl-tricyclo [5.2.1.0 ] decane wherein the hydroxy group is either at the 3 or 4 position and useful as sensitizers for positive resists, particularly relatively thick resists at 365 nm.

公开(公告)号：DE3678858D1

公开(公告)日：1991-05-29

申请号：DE3678858

申请日：1986-02-28

Applicant: IBM

Inventor： HEFFERON GEORGE JOSEPH ,  ITO HIROSHI ,  MACDONALD SCOTT ARTHUR ,  WILLSON CARLTON GRANT

IPC: H01L21/302 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065