公开(公告)号：DE102005003185A1

公开(公告)日：2006-07-27

申请号：DE102005003185

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20

Abstract: The system has a mask (25) for manufacturing of semiconductor structures on a wafer by transformation of the mask on the wafer. The mask has main mask structures (20) parallel to a transformation axis (x) that is running perpendicular to a dipole axis (y). A connection mask structure (23) that is transversely aligned in sections to the dipole axis is formed on the mask and connects the main mask structures with each other. Independent claims are also included for the following: (A) a method of manufacturing a semiconductor circuit with a transformation system (B) an application of a transformation system for manufacturing of a semiconductor circuit.

公开(公告)号：DE10310136A1

公开(公告)日：2004-09-16

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20 ,  G03F1/14

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE10143723A1

公开(公告)日：2003-04-03

申请号：DE10143723

申请日：2001-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BODENDORF CHRISTOF TILMANN ,  THIELE JOERG

IPC: G03F1/00 ,  G03F1/36

Abstract: A method of producing a layout for a mask for use in semiconductor production includes a two-stage, iterative optimization of the position of scatter bars in relation to main structures being carried out. In a first stage, following first production of scatter bars and carrying out an OPC, scatter bars are again generated based on the corrected main structures. A renewed OPC is then carried out, followed by the renewed formation of scatter bars. This is repeated until the layout has been optimized sufficiently. Then, in the second stage, defocused exposure of the layout is simulated and, if required, further adaptation of the scatter bars is carried out. The first and second iterative stages can also be employed independently of each other. The common factor in the iterations is that the scatter bar positions are varied with each iteration and is therefore optimized.

公开(公告)号：DE10021096A1

公开(公告)日：2001-10-31

申请号：DE10021096

申请日：2000-04-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  GANS FRITZ ,  FISCHER WERNER ,  PFORR RAINER

IPC: G03F1/00

Abstract: The mask consists of an image structure (2) and a dummy structure (3) formed on a transparent carrier material (1). The dummy structure is spaced apart from all image structures (2) and has different transparency and phase rotation from the image structure. The dummy structure is preferably semitransparent. The smallest lateral dimension of the dummy structure is at least half as large as the smallest lateral dimension of the image structure. The semitransparent dummy structure may be optically homogenous.

公开(公告)号：DE10340611B4

公开(公告)日：2007-08-23

申请号：DE10340611

申请日：2003-08-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  LUDWIG BURKHARD ,  THIELE JOERG ,  AHRENS MARCO ,  KOEHLE RODERICK ,  PFORR RAINER ,  MORGANA NICOLO

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T), consisting of two transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than standard width. Lithographic mask contains angular structure element (0) formed by two opaque segments (01,2). Structure element contains convex section (A) facing over obtuse angle (alpha). Adjacent to angular element is transparent structure (T).Transparent structure is formed in two parts, i.e. consisting of two different transparent segments (T1,2), formed axis-symmetrically to angle (alpha) bisecting line (WH). Along this line in convex section, transparent structure is wider than used standard width of transparent segments.

公开(公告)号：DE10310136B4

公开(公告)日：2007-05-03

申请号：DE10310136

申请日：2003-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DETTMANN WOLFGANG ,  HENNIG MARIO ,  PFORR RAINER ,  KOEHLE RODERICK ,  HOFSAES MARKUS ,  THIELE JOERG

IPC: G03F1/00 ,  G03F7/20

Abstract: Structure patterns mutually correlated on masks are projected onto the same photosensitive layer (R) on semiconductor wafer (W) in projection system. The first mask (P) contains opaque structure element (25) on first position so that its position projection onto wafer forms not-exposed region of lacquer in photo-sensitive layer. There is at least one second mask (T), allocated to first mask, with semi-transparent region (23') on second position of second mask, coinciding with first position on first mask, whose image on wafer illuminates at least part of lacquer region in photo-sensitive layer. Independent claims are included for method of producing set of several masks.

公开(公告)号：DE102005003185B4

公开(公告)日：2006-11-02

申请号：DE102005003185

申请日：2005-01-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MOUKARA MOLELA ,  WINKLER THORSTEN ,  ZEILER KARSTEN ,  THIELE JOERG ,  KOESTLER WOLFRAM ,  HENNIG MARIO

IPC: G03F7/20

公开(公告)号：DE10133127A1

公开(公告)日：2003-01-30

申请号：DE10133127

申请日：2001-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： THIELE JOERG ,  ANKE INES ,  HAFFNER HENNING ,  SEMMLER ARMIN ,  FISCHER WERNER

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00

Abstract: Process for calculating or manufacturing a mask (4) for producing a structured mask (6) or structure (2) of an integrated circuit comprises calculating or manufacturing the mask based on the structured mask and/or structure. A nominal value for at least one parameter is given for the structured mask and/or structure. The mask is calculated in such a way that the structured mask and/or structure contain a prescribed value region based on the parameter. The value region is directed asymmetrically to the nominal value of the parameter. A larger deviation of the value of the parameter from the nominal value is established in a small critical value direction for the quality or function of the structured mask and/or structure than in a critical value direction. Preferred Features: The mask is an exposure mask (4) which prepares an etching mask according to a photolithographic process.

公开(公告)号：DE10017767A1

公开(公告)日：2001-10-18

申请号：DE10017767

申请日：2000-04-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER WERNER ,  LUDWIG BURKHARD ,  MEYER DIRK ,  THIELE JOERG

IPC: G03F1/00 ,  G06F17/50 ,  H01L21/312