21.
    发明专利
    未知

    公开(公告)号:DE2263487A1

    公开(公告)日:1973-07-19

    申请号:DE2263487

    申请日:1972-12-27

    Applicant: IBM

    Abstract: 1395738 Records INTERNATIONAL BUSINESS MACHINES CORP 25 Oct 1972 [30 Dec 1971] 49105/72 Heading G5R [Also in Division C7] A wear resistant surface is provided on a first component, e.g. a magnetic disc or tape of granular material having a predetermined grain size, for sliding mechanical contact by a second component, e.g. a magnetic transducer head movable over the surface, by forming on the first component a layer of granular polycrystalline material, e.g. Au or Ni having a grain size of 10 to 1000Š, less than that of the first component, to reduce the development of a wear track caused by an asperity of the face of the second component. A polycrystalline Ni layer may-be electroplated from a solution comprising 218 g/l NiCl 2 .6H 2 O, 25 g/l H 3 BO 3 , 1À64 g/l Na saccharin and 10 drops of saturated 2- butyne 1,4 diol.

    24.
    发明专利
    未知

    公开(公告)号:DE3876228T2

    公开(公告)日:1993-06-03

    申请号:DE3876228

    申请日:1988-01-15

    Applicant: IBM

    Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

    25.
    发明专利
    未知

    公开(公告)号:DE3876228D1

    公开(公告)日:1993-01-07

    申请号:DE3876228

    申请日:1988-01-15

    Applicant: IBM

    Abstract: The field-effect structure comprises a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high- Tc metal-oxide superconductor, e.g. YBaCuO, having a carrier density of about 10 power 21/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched betweeen "zero" (undepleted, superconducting) and "very high" (depleted).

    26.
    发明专利
    未知

    公开(公告)号:DE68901980D1

    公开(公告)日:1992-08-13

    申请号:DE68901980

    申请日:1989-01-19

    Applicant: IBM

    Abstract: High-Tc superconducting devices are described in which controlled grain boundaries (GB) in a layer (12) of the superconductors form a weak link or barrier between superconducting grains (A, B) of the layer (12). A method is described for reproducibly fabricating these devices, including first preparing a substrate (10) to include at least one grain boundary (GB) therein. A high-Tc superconductor layer (12) is then epitaxially deposited on the substrate (10) in order to produce a corresponding grain boundary (GB) in the superconducting layer (12). This superconducting layer (12) is then patterned to leave at least two regions on either side of the grain boundary (GB), the two regions functioning as contact areas for a barrier device including the grain boundary (GB) as a current flow barrier. Electrical contacts (16) can be made to the superconducting regions (A, B) so that bias currents can be produced across the grain boundary (GB) which acts as a tunnel barrier or weak link connection.

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