公开(公告)号：DE2263487A1

公开(公告)日：1973-07-19

申请号：DE2263487

申请日：1972-12-27

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  FEDER RALPH ,  ROSENBERG ROBERT

IPC: C08J5/16 ,  C23C14/24 ,  C23C14/34 ,  C23C30/00 ,  C25D7/00 ,  C25D7/10 ,  F16C33/12 ,  F16C33/20 ,  G11B5/187 ,  G11B5/72

Abstract: 1395738 Records INTERNATIONAL BUSINESS MACHINES CORP 25 Oct 1972 [30 Dec 1971] 49105/72 Heading G5R [Also in Division C7] A wear resistant surface is provided on a first component, e.g. a magnetic disc or tape of granular material having a predetermined grain size, for sliding mechanical contact by a second component, e.g. a magnetic transducer head movable over the surface, by forming on the first component a layer of granular polycrystalline material, e.g. Au or Ni having a grain size of 10 to 1000Š, less than that of the first component, to reduce the development of a wear track caused by an asperity of the face of the second component. A polycrystalline Ni layer may-be electroplated from a solution comprising 218 g/l NiCl 2 .6H 2 O, 25 g/l H 3 BO 3 , 1À64 g/l Na saccharin and 10 drops of saturated 2- butyne 1,4 diol.

公开(公告)号：DE2131513A1

公开(公告)日：1972-04-06

申请号：DE2131513

申请日：1971-06-25

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  FRANCIS FREEDMAN JAMES ,  KOVAC ZLATA

IPC: B29C70/14 ,  B29C70/62 ,  C22C32/00 ,  C22C47/00 ,  B29D3/02

公开(公告)号：DE2060476A1

公开(公告)日：1971-07-22

申请号：DE2060476

申请日：1970-12-09

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MAX D HEURLE FRANCOIS ,  GANGULEE AMITAVA

IPC: H01C17/06 ,  C23C14/14 ,  H01B1/00 ,  H01F10/06 ,  H01F10/10 ,  H01L21/00 ,  H01L21/28 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/43 ,  H01L39/22 ,  H01L39/24 ,  H05K3/14 ,  C22F3/00

公开(公告)号：DE3876228T2

公开(公告)日：1993-06-03

申请号：DE3876228

申请日：1988-01-15

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

IPC: H01L39/22 ,  H01L39/14

Abstract: A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 10 /cm and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：DE3876228D1

公开(公告)日：1993-01-07

申请号：DE3876228

申请日：1988-01-15

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL ALEXANDER ,  WOLF HANS PETER

IPC: H01L39/22 ,  H01L39/14

Abstract: The field-effect structure comprises a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high- Tc metal-oxide superconductor, e.g. YBaCuO, having a carrier density of about 10 power 21/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched betweeen "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：DE68901980D1

公开(公告)日：1992-08-13

申请号：DE68901980

申请日：1989-01-19

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CHI CHENG-CHUNG JOHN ,  DIMOS DUANE BRIAN ,  MANNHARDT JOCHEN DIETER ,  TSUEI CHANG CHYI

IPC: B32B18/00 ,  C01G1/00 ,  C04B41/87 ,  H01B13/00 ,  H01L39/22 ,  H01L39/24

Abstract: High-Tc superconducting devices are described in which controlled grain boundaries (GB) in a layer (12) of the superconductors form a weak link or barrier between superconducting grains (A, B) of the layer (12). A method is described for reproducibly fabricating these devices, including first preparing a substrate (10) to include at least one grain boundary (GB) therein. A high-Tc superconductor layer (12) is then epitaxially deposited on the substrate (10) in order to produce a corresponding grain boundary (GB) in the superconducting layer (12). This superconducting layer (12) is then patterned to leave at least two regions on either side of the grain boundary (GB), the two regions functioning as contact areas for a barrier device including the grain boundary (GB) as a current flow barrier. Electrical contacts (16) can be made to the superconducting regions (A, B) so that bias currents can be produced across the grain boundary (GB) which acts as a tunnel barrier or weak link connection.

公开(公告)号：DE3771930D1

公开(公告)日：1991-09-12

申请号：DE3771930

申请日：1987-03-24

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  FRISCH MARGARET ANN ,  SPEIDELL JAMES LOUIS

IPC: G21K1/087 ,  H01J37/04 ,  H01J37/05 ,  H01J49/48 ,  H01J1/46 ,  H01J3/14

Abstract: A spherical grid for use in instrumentation comprising a rigid non-magnetic frame (10) having a pattern of holes (16). Into each hole a flat wafer (20) is placed, each wafer having etched therein holes defining the grid mesh. The frame maintains the geometric conformal shape allowing large units to be constructed.

公开(公告)号：DE3171523D1

公开(公告)日：1985-09-05

申请号：DE3171523

申请日：1981-01-23

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CHOU NED J ,  FEDER RALPH ,  FOWLER ALAN B ,  VANVECHTEN JAMES A

IPC: G03F1/20 ,  H01L21/203 ,  H01L21/266 ,  C30B23/04 ,  G03F1/00

Abstract: A high aspect ratio collimating mask (2) for use in ion beam epitaxy or ion implantation doping is formed through the use of damage-trail-forming materials which are irradiated through a mask and then etched. The high aspect ratio is obtained in part by the sequential formation of a plurality of spaced mask plates. The mask is useful in producing large scale integrated circuits by localized ion implantation (10) during epitaxial growth (7) of a crystal wafer (1). In apparatus for use of the collimating mask (2), the crystal wafer (1) is held perpendicular to the plurality of discrete parallel ion beams (10) emitted through the collimating mask (2).

公开(公告)号：DE3066485D1

公开(公告)日：1984-03-15

申请号：DE3066485

申请日：1980-06-09

Applicant: IBM

Inventor： CHANDRASHEKHAR G V ,  GAMBINO RICHARD JOSEPH ,  CHAUDHARI PRAVEEN ,  HARPER JAMES MCKEEL EDWIN ,  CUOMO JEROME JOHN

IPC: B23K15/00 ,  H01J3/04 ,  H01J27/02 ,  H01J27/20 ,  H01J37/08 ,  H01L21/265 ,  H01L27/00

Abstract: The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.

公开(公告)号：DE2965205D1

公开(公告)日：1983-05-19

申请号：DE2965205

申请日：1979-09-24

Applicant: IBM

Inventor： TYNAN EUGENE ,  CHAUDHARI PRAVEEN ,  KIESSLING JOHN B ,  PERLMAN DAVID ,  VON GUTFELD ROBERT

IPC: H01R43/00 ,  B23K26/22 ,  H01L21/60 ,  H01R43/02 ,  H05K3/32 ,  B23K26/00 ,  B23K17/00 ,  B23K15/00

Abstract: 1. A method for bonding a metallic wire (13) to a microcircuit conductor (11), characterized in that it includes the steps of : a. applying said wire to the conductor, b. maintaining said wire in close contact with said conductor, c. applying a focussed energy beam (14) directed towards a point at least tangentially in contact with said wire, and forming a hole in said conductor, and d. applying additional energy to portions of said wire adjacent to said point for melting the wire metal so that the metal flows into said hole (15) to form an electrical contact between the wire and the conductor.