公开(公告)号：DE10345525B4

公开(公告)日：2007-08-16

申请号：DE10345525

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  CRELL CHRISTIAN

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F7/26

公开(公告)号：DE10352639B4

公开(公告)日：2007-03-01

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G03F7/20 ,  G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.

公开(公告)号：DE102004014482A1

公开(公告)日：2005-10-13

申请号：DE102004014482

申请日：2004-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  MAREK PETER ,  HAY BERND ,  DOEHR NINA ,  KATZWINKEL FRANK ,  JAEHNERT CARMEN

IPC: G03C5/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00

Abstract: Tolerances to be communicated to the manufacturer for a photomask fabrication process that are assigned as desired values of feature sizes to be realized on the photomask, are freed of restrictions by predefining, for a first feature size, a first desired value and a first tolerance assigned to the first desired value. The real discrepancy between the first feature size and the first desired value is taken into account when predefining desired values assigned to the further feature sizes to be provided on the photomask. As a result, a value which corresponds to a first approximation to the permitted feature size tolerance on the semiconductor wafer is provided for the tolerances of the desired values.

公开(公告)号：DE10352639A1

公开(公告)日：2005-06-23

申请号：DE10352639

申请日：2003-11-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANGEN ANDREAS ,  HAASE NORBERT ,  HAFFNER HENNING ,  EGGERS KARIN ,  JAEHNERT CARMEN

IPC: G01B5/28 ,  G01B5/30 ,  G01N21/956 ,  G03F1/00 ,  G03F7/20

Abstract: The method of dynamically monitoring a reticle includes preventively macro monitoring and defect inspecting with regard to mechanical loading, including particle deposits or electrostatically induced damage, and energy load, including the associated changes to the reticle material and surface characteristics. Different surface distributions of the absorber layer as well as characteristics of the exposure system, such as N 2 purging of the projection lens/reticle area in order to reduce contamination and recrystallization on optically active surfaces are considered.

公开(公告)号：DE102004031877A1

公开(公告)日：2005-03-24

申请号：DE102004031877

申请日：2004-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE STEFFEN ,  HAFFNER HENNING

IPC: G01N21/956 ,  G06K9/00 ,  G06T7/00 ,  G09F1/00 ,  H01L21/66

Abstract: A method of inspecting a mask or reticle, the mask or reticle being provided with a pattern to be transferred onto a semiconductor wafer, the pattern having a defect, includes the step of creating a plurality of logical zones and uniquely associating each of said logical zones with a surface area of said pattern. Then, an inspection rule representing a characteristic sensitivity for detecting a defect is associated with each of said logical zones. An image of said pattern is then recorded and compared with a reference image of an ideal pattern for locating a defect within said pattern. One of said logical zones is then identified with said located defect and that inspection rule which is associated with said identified logical zone is retrieved from a memory. The inspection rule is then applied to a characteristic of said defect for determining, whether said defect is to be repaired. A signal can be issued in response to said determination.

公开(公告)号：DE10245621A1

公开(公告)日：2004-04-22

申请号：DE10245621

申请日：2002-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HAFFNER HENNING ,  BUECHNER BETTINE ,  ROTSCH CHRISTIAN

IPC: G03F1/00 ,  G03F7/20 ,  G06F17/50

Abstract: A mask is to be prepared for a memory chip which has four memory cell fields (12). As shown in the circuit plan (10) each cell has six measurement reference positions (20) provided by the end customer to the mask manufacturer. The invention proposes that a step is introduced in the production of the mask using this information to give the actual coordinates of the circuit structural elements (18) and not deduced measurement structures.

公开(公告)号：DE10131187C2

公开(公告)日：2003-06-18

申请号：DE10131187

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRANKE THORSTEN ,  VERBEEK MARTIN ,  SEMMLER ARMIN ,  HAFFNER HENNING

IPC: G03F1/00

公开(公告)号：DE10126130A1

公开(公告)日：2002-12-12

申请号：DE10126130

申请日：2001-05-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BAUCH LOTHAR ,  GRUENING-VON SCHWERIN ULRICKE ,  HAFFNER HENNING ,  KOWALEWSKI JOHANNES ,  SAVIGNAC DOMINIQUE ,  MORHARD KLAUS-DIETER ,  THIELSCHER GUIDO ,  TRINOWITZ REINER

IPC: G03F1/00 ,  H01L21/768 ,  H01L21/28

Abstract: The method involves using a mask illuminated with short-wave light in an optical lithographic method. The mask has elongated, slit-shaped openings for producing essentially circular and/or elongated contact holes (2,6). The illumination conditions are selected so that an image reduction of at least 200 to 400 nm. occurs in the longitudinal direction of the openings.

公开(公告)号：DE10051719A1

公开(公告)日：2002-05-08

申请号：DE10051719

申请日：2000-10-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLING SABINE ,  SAVIGNAC DOMINIQUE ,  MOLL HANS-PETER ,  HAFFNER HENNING ,  HIETSCHOLD ELKE

IPC: H01L21/768 ,  H01L21/8242 ,  H01L23/528 ,  H01L27/02 ,  H01L27/105 ,  H01L21/312 ,  H01L21/105 ,  H01L21/82 ,  G11C5/06 ,  H01L27/10

Abstract: The method involves using a lithographic process, whereby photo-lacquer structures are formed on the semiconducting substrate (5) to define dummy circuit structures. If an envisaged dummy structure (4) is smaller than a minimum size determined by the smallest required adhesive surface for photo-lacquer the first dummy structure is combined with a second to exceed the minimum size. An independent claim is also included for the following: a semiconducting substrate with functional circuit structures and dummy structures.

公开(公告)号：DE10044257A1

公开(公告)日：2002-04-11

申请号：DE10044257

申请日：2000-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SEMMLER ARMIN ,  HAFFNER HENNING ,  FRIEDRICH CHRISTOPH

IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50 ,  H01L21/027 ,  H01L21/66 ,  G03F3/10

Abstract: The method involves defining original data specifying an original layout and automatically computing new layout data similar to the original layout in terms of the geometry of a mask generated from the original data. The new data are computed based on rules related to deviations in layout geometry from a mask manufactured from this layout or modeled from the layout by following steps of a manufacturing process. The method involves predefining original data (12) specifying an original layout (10) and automatically computing new data (54) specifying a new layout (42) from the original data, whereby the new layout is similar to the original layout in terms of the geometry of a mask (22) generated from the original data. The new data are computed based on rules related to deviations in the geometry of a layout from a mask manufactured from this layout or modeled from the layout by following the steps of the manufacturing process. Independent claims are also included for the following: an arrangement for generating mask layout data, especially a data processing system, a program with a command sequence for implementation by a data processing system and an integrated circuit structure.