公开(公告)号：DE102004063991B4

公开(公告)日：2009-06-18

申请号：DE102004063991

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WAHL UWE ,  MEYER THORSTEN ,  RUEB MICHAEL ,  WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  SCHAEFFER CARSTEN

IPC: H01L21/336 ,  H01L29/78

公开(公告)号：DE19908809B4

公开(公告)日：2007-02-01

申请号：DE19908809

申请日：1999-03-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAEFFER CARSTEN

IPC: H01L21/336 ,  H01L21/265 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

Abstract: In a method is described for producing an MOS transistor structure with elevated body conductivity, a substrate layer is prepared and body regions are formed therein the body regions defining a main surface of the transistor structure and at least one channel region is also formed. Gate oxide and gate electrodes are formed in the region of the main surface, and source regions are formed that extend from the main surface into the body regions. An implantation of dopant of a first conductivity type occurs in at least a part of the channel region, this implantation dosage being controlled such that a re-doping of the body region into an area of the first conductivity type does not occur in the implantation region.

公开(公告)号：DE102005004354A1

公开(公告)日：2006-08-17

申请号：DE102005004354

申请日：2005-01-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LASKA THOMAS ,  SCHAEFFER CARSTEN ,  UMBACH FRANK ,  PFIRSCH FRANK ,  HILLE FRANK ,  GRIEBL ERICH ,  PFAFFENLEHNER MANFRED

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/78

Abstract: Semiconductor device has a semiconductor body between front and rear side contacts with front and rear side surfaces. Control electrodes are embedded against base areas (3) in trenches, such that current flow between emitter areas (9) and drift areas is controllable by the electrodes. A floating area (5) has a penetration depth in the drift areas, where the depth corresponds to another two penetration depths of the base areas and the trenches.

公开(公告)号：DE102004052643A1

公开(公告)日：2006-05-04

申请号：DE102004052643

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WAHL UWE ,  MEYER THORSTEN ,  RUEB MICHAEL ,  WILLMEROTH ARMIN ,  SCHMITT MARKUS ,  TOLKSDORF CAROLIN ,  SCHAEFFER CARSTEN

IPC: H01L29/78 ,  H01L21/336

Abstract: Lateral trench transistor (200) has a body region (4) inside which a semiconductor region (10) is provided adjoining to it. The semiconductor region is electrically connected with the source contact (12) and its type of endowment corresponds to the type of endowment of body region. An independent claim is also included for a method for manufacturing of endowed semiconductor region.

公开(公告)号：DE10208787A1

公开(公告)日：2003-09-18

申请号：DE10208787

申请日：2002-02-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FRIZA WOLFGANG ,  SCHAEFFER CARSTEN ,  POELZL MARTIN

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/334 ,  H01L21/336 ,  H01L21/763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/74 ,  H01L21/8249

Abstract: The filling material is introduced homogeneously into the trenches (1,2,3) in successive stages (I, III). Between these layer (15,16) -forming stages, a further stage (II) forms a barrier (11).

公开(公告)号：DE10053445C2

公开(公告)日：2002-11-28

申请号：DE10053445

申请日：2000-10-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  HUESKEN HOLGER ,  LASKA THOMAS ,  PORST ALFRED ,  SCHAEFFER CARSTEN ,  SCHMIDT THOMAS ,  PFIRSCH FRANK

IPC: H01L29/10 ,  H01L29/739