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公开(公告)号：KR101812541B1
公开(公告)日：2017-12-27
申请号：KR1020110098711
申请日：2011-09-29
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
Abstract: (과제) 측정대상물상에박막이형성되어있는경우라도, 측정대상물의온도를종래에비해정확하게측정할수 있는온도측정방법을제공한다. (해결수단) 광원으로부터의빛을, 기판상에박막이형성된측정대상물의측정포인트까지전송하는공정과, 기판의표면에서의반사광에의한제1 간섭파와, 기판과박막과의계면및 박막의이면(裏面)에서의반사광에의한제2 간섭파를측정하는공정과, 제1 간섭파에서제2 간섭파까지의광로길이를산출하는공정과, 제2 간섭파의강도에기초하여, 박막의막두께를산출하는공정과, 산출한박막의막두께에기초하여, 기판의광로길이와산출한광로길이와의광로차를산출하는공정과, 산출한광로차에기초하여산출한제1 간섭파에서제2 간섭파까지의광로길이를보정하는공정과, 보정된광로길이로부터측정포인트에있어서의측정대상물의온도를산출하는공정을구비한다.
Abstract translation: （本发明要解决的问题）提供一种温度测量方法，即使当在被测物体上形成薄膜时，该温度测量方法也能够精确地测量待测量物体的温度。 一种制造半导体器件的方法，包括以下步骤：将来自光源的光传输到其上形成有薄膜的测量对象的测量点;测量从所述衬底的表面反射的第一干涉波， 并且基于第二干涉波的强度计算薄膜的厚度;基于第二干涉波的强度计算薄膜的厚度; 在这个过程中的第二干扰波和，一个基于薄膜产率的膜厚度，在计算光程差之间的长度在基板的光路长度并计算汉王和的步骤的差的基础上计算，计算汉王第一干扰该 以及从校正光路长度计算测量点处的测量对象的温度的步骤。
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公开(公告)号：KR101758026B1
公开(公告)日：2017-07-14
申请号：KR1020160144583
申请日：2016-11-01
Applicant: 도쿄엘렉트론가부시키가이샤
Abstract: 유도결합형의플라즈마프로세스에있어서간이한보정코일을이용하여플라즈마밀도분포를자유롭고또한정밀하게제어하는것이다. 이유도결합형플라즈마처리장치는 RF 안테나(54)에근접하는유전체창(52)의아래에서유도결합의플라즈마를도넛형상으로생성하고, 이도넛형상의플라즈마를넓은처리공간내에서분산시켜, 서셉터(12) 근방(즉, 반도체웨이퍼 W상)에서플라즈마의밀도를평균화하도록하고있다. 그리고, 서셉터(12) 근방의플라즈마밀도분포를직경방향에서균일화하고, 또한 RF 안테나(54)가발생하는 RF 자계에대해보정링(70)에의해전자계적인보정을거는동시에, 프로세스조건에따라스위칭기구(110)에의해보정코일(70)의통전듀티비를가변하도록하고있다.
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公开(公告)号：KR101672078B1
公开(公告)日：2016-11-02
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: 진공용기내에서기판에대해성막처리를행하도록구성된성막장치는, 상기기판을적재하도록구성된기판적재영역을공전시키도록구성된회전테이블과, 상기기판적재영역에처리가스를공급하도록구성된처리가스공급부를포함하고, 상기회전테이블의회전에수반하여상기기판상에분자층혹은원자층을순차적층하여박막을형성하도록구성된성막영역과, 상기성막영역에대해상기회전테이블의회전방향으로이격되어형성된플라즈마발생영역에서, 플라즈마발생용가스의플라즈마화에의해생성된플라즈마에의해상기분자층혹은원자층을개질처리하도록구성된플라즈마처리부와, 플라즈마중의이온을상기기판의표면에인입시키기위해, 상기회전테이블상의상기기판의높이보다도하방측에설치된하측바이어스전극및 상기높이와동일하거나혹은당해높이보다도상방측에배치된상측바이어스전극과, 상기하측바이어스전극및 상기상측바이어스전극중 적어도한쪽에접속되고, 상기하측바이어스전극및 상기상측바이어스전극이상기플라즈마발생영역을사이에두고용량결합되어상기기판에바이어스전위를형성하도록구성된고주파전원부와, 상기진공용기내를배기하도록구성된배기기구를구비한다.
Abstract translation: 用于对基板进行成膜处理的成膜装置包括旋转台，成膜区域，被配置为包括处理气体供给部，等离子体处理部，设置在位置的下侧的下偏置电极 位于旋转台上的基板的高度，布置在高度位置的相同位置的上偏置电极或高度位置的上侧;高频电源部分，连接到下偏置电极和下偏置电极中的至少一个; 所述上偏置电极并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述衬底上形成偏置电位，以及排气机构。
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公开(公告)号：KR101654968B1
公开(公告)日：2016-09-06
申请号：KR1020140013114
申请日：2014-02-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , H01J37/32 , C23C16/455
CPC classification number: C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733
Abstract: 회전테이블(2)의하방측에서개질영역(S1)에대향하는위치에바이어스전극(120)을배치함과함께, 개질영역(S1)의상방측에패러데이실드(95)를배치하고, 이들바이어스전극(120)과패러데이실드(95)를용량결합시켜상기개질영역(S1)에바이어스전계를형성한다. 그리고, 바이어스전극(120)에대해서, 회전테이블(2)의회전방향에서의폭 치수(t)가서로인접하는웨이퍼(W)끼리의이격치수(d)보다도작게되도록형성하여, 서로인접하는웨이퍼(W)에대해동시에바이어스전계가가해지는것을방지하면서, 각웨이퍼(W)에대해개별로바이어스전계를형성한다.
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公开(公告)号：KR1020140100442A
公开(公告)日：2014-08-14
申请号：KR1020140013114
申请日：2014-02-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , H01J37/32 , C23C16/455
CPC classification number: C23C16/45519 , C23C16/4554 , C23C16/45551 , H01J37/32541 , H01J37/32568 , H01J37/32715 , H01J37/32733 , H01L21/68714
Abstract: A bias electrode (120) is arranged in a position which faces a reforming region (S1) in the lower part of a rotation table (2). A faraday shield (95) is arranged in the front part of the reforming region (S1). A bias electric field is formed in the reforming region (S1) by the capacitive coupling of the bias electrode (120) and the faraday shield (95). And, with regard to the bias electrode (120), a width dimension (t) in the rotation direction of the rotation table (2) is smaller than the separation demission (d) between adjacent wafers, thereby preventing the bias electric field from being simultaneously applied to the adjacent wafers and individually forming a bias electric field with regard to each wafer.
Abstract translation: 偏置电极（120）配置在与旋转台（2）的下部的重整区域（S1）相对的位置。 在重整区域（S1）的前部设有法拉第罩（95）。 通过偏置电极（120）和法拉第屏蔽（95）的电容耦合，在重整区（S1）中形成偏置电场。 并且，关于偏置电极（120），旋转台（2）的旋转方向的宽度尺寸（t）小于相邻晶片间的分离离子（d），从而防止偏置电极 同时施加到相邻晶片并且相对于每个晶片分别形成偏置电场。
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Patent Agency Ranking
公开(公告)号：KR1020140077841A
公开(公告)日：2014-06-24
申请号：KR1020130153691
申请日：2013-12-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/687 , C23C16/458 , C23C16/455 , H01J37/32 , H01L21/02
CPC classification number: H01J37/321 , C23C16/45536 , C23C16/45551 , C23C16/4584 , H01J37/32082 , H01J37/3211 , H01J37/3244 , H01J37/32651 , H01J37/32715 , H01J37/32733 , H01J37/32752 , H01L21/02164 , H01L21/02167 , H01L21/0217 , H01L21/02211 , H01L21/02214 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
Abstract: A film formation apparatus, which is configured to conduct a film formation process for a substrate in a vacuum chamber, includes a rotating table configured to revolve a substrate loading area configured to load a substrate thereon; a film formation area configured to include a process gas supply part configured to supply a process gas to the substrate mounting area and sequentially laminate a molecular layer or an atomic layer on the substrate with rotation of the rotating table to form a thin film; a plasma processing part configured to conduct modification processing on the molecular layer or the atomic layer by plasma produced through plasma formation of a gas for plasma generation in a plasma generation area formed separately from the film formation area in a direction of rotation of the rotating table; a lower bias electrode provided at a lower side of the height position of the substrate on the rotating table to attract ions in the plasma to a surface of the substrate; an upper bias electrode arranged at the same height position or an upper side of the height position of the substrate; a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled through the plasma generation area; and an exhaust device configured to evacuate inside of the vacuum chamber.
Abstract translation: 构造成在真空室中进行基板的成膜处理的成膜装置包括旋转台，被配置为旋转被配置为在其上装载基板的基板装载区域; 成膜区域，其被配置为包括处理气体供给部，其被配置为向所述基板安装区域提供处理气体，并且通过所述旋转台的旋转顺序地将所述基板上的分子层或原子层层叠以形成薄膜; 等离子体处理部，其被配置为通过等离子体形成等离子体形成等离子体生成等离子体生成等离子体生成区域，使其在分子层或原子层上进行改性处理，所述等离子体产生区域与所述成膜区域分开地形成在所述旋转台的旋转方向上 ; 下偏置电极，设置在旋转台上的基板的高度位置的下侧，以将等离子体中的离子吸引到基板的表面; 布置在所述基板的高度位置的相同高度位置或上侧的上偏置电极; 连接到所述下偏置电极和所述上偏置电极中的至少一个的高频电源部，并且被配置为以所述下偏置电极和所述上偏置电极电容耦合的方式在所述基板上形成偏置电位 通过等离子体发生区域; 以及构造成在真空室内抽真空的排气装置。
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公开(公告)号：KR1020120112147A
公开(公告)日：2012-10-11
申请号：KR1020120031835
申请日：2012-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205
CPC classification number: H01J37/32091 , H01J37/32642 , H01J37/32715
Abstract: PURPOSE: A plasma processing apparatus is provided to control temperature rise of a ring member when plasma is radiated by installing a heat transfer member and an insulating member between a ring member and an arrangement table. CONSTITUTION: A ring member(5) is installed on a stepped part(31) of an arrangement table(3). The ring member adjusts the state of plasma. An insulating member(6) is installed to be concentric to the center of a substrate(W) on the arrangement table. The insulating member adjusts a potential difference between the substrate and the ring member. A heat transfer member(7) is installed between an upper side of the arrangement table and a lower side of the ring member. [Reference numerals] (3) Placement; (5) Focus ring; (6,7) Insulating member
Abstract translation: 目的：提供一种等离子体处理装置，用于通过将传热构件和绝缘构件安装在环构件和布置台之间来控制等离子体时的环构件的温度上升。 构成：环状构件（5）安装在排列台（3）的台阶部（31）上。 环件调节等离子体的状态。 绝缘构件（6）安装成与布置台上的基板（W）的中心同心。 绝缘构件调整基板和环构件之间的电位差。 传热构件（7）安装在排列台的上侧和环构件的下侧之间。 （附图标记）（3）放置; （5）聚焦环; （6,7）绝缘件
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公开(公告)号：KR1020120034012A
公开(公告)日：2012-04-09
申请号：KR1020110098711
申请日：2011-09-29
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: G01K11/125 , G01B9/02021 , G01B9/02025 , G01B9/0209 , G01B11/0675
Abstract: PURPOSE: A temperature measuring method and a storage media are provided to accurately measure a temperature of a measurement object even though a thin film is formed in the measurement object. CONSTITUTION: A temperature measuring method is as follows. Light is transmitted from a light source(110) to a measurement point(P) of a measurement object in which a thin film is formed on a substrate. A first interference wave by reflection light from a surface of the substrate and second interference wave by reflection light from the substrate, the thin film, and a rear side of the thin film are measured. A length of a light path from the first interference to second interference is calculated. A thickness of the thin film is calculated based on the intensity of the second interference wave. A length difference between a light path length of the substrate and the calculated light path length is calculated based on the calculated thickness of the thin film. The light path length from the first interference wave to the second interference wave is revised based on the calculated length difference of the light path. A temperature of the measurement object with respect to the measurement point is calculated from the revised light path length.
Abstract translation: 目的：提供温度测量方法和存储介质以精确地测量测量对象的温度，即使在测量对象中形成薄膜。 构成：温度测量方法如下。 光从光源（110）传输到其中在基板上形成薄膜的测量对象的测量点（P）。 测量来自基板表面的反射光的第一干涉波和来自基板，薄膜以及薄膜背面的反射光的第二干涉波。 计算从第一干扰到第二干扰的光路的长度。 基于第二干涉波的强度来计算薄膜的厚度。 基于计算出的薄膜厚度来计算基板的光路长度与计算出的光路长度之间的长度差。 基于计算出的光路的长度差，修正从第一干涉波到第二干涉波的光路长度。 测量对象相对于测量点的温度根据修改的光路长度计算。
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公开(公告)号：KR1020110117699A
公开(公告)日：2011-10-27
申请号：KR1020117020835
申请日：2010-03-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/02101 , H01L21/02071 , H01L21/67051 , H01L21/67109
Abstract: 간단한 장치 구성에서 실시 가능하고, 미세 패턴이 형성되어 있는 기판을 그 미세 패턴에 악영향을 주는 일 없이 단시간에 세정하기 위한 기판 세정 방법을 제공한다. 웨이퍼 W의 표면에 소정의 가공을 실시하는 처리 챔버로부터 웨이퍼 W의 세정을 실행하는 세정 챔버에 웨이퍼 W를 반송하고, 세정 챔버내에 있어 웨이퍼 W를 소정 온도로 냉각하고, 초유동체로서의 초유동 헬륨을 웨이퍼 W의 표면에 공급하고, 웨이퍼 W의 표면으로부터 초유동 헬륨을 유출하는 것에 의해서 미세 패턴내의 오염 성분을 흘러가게 한다.
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公开(公告)号：KR100993392B1
公开(公告)日：2010-11-10
申请号：KR1020080061061
申请日：2008-06-26
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/68 , H01L21/677
CPC classification number: H01L21/67766 , H01L21/67778 , H01L21/67781
Abstract: 구성 부품의 부식, 파티클의 기판으로의 부착 및 기판 반송 모듈의 비용 상승 및 대형화를 방지할 수 있는 기판 반송 모듈을 제공한다.
로더 모듈(14)은 웨이퍼(W)에 에칭 처리를 실시하는 프로세스 모듈(11)과 로드록 모듈(12)을 거쳐 연접(連接)되는 동시에, 웨이퍼(W)를 반송하는 기판 반송 장치(16) 및 상기 기판 반송 장치(16)를 수용하는 반송실(15)을 구비하고, 상기 반송실(15) 내는 외부 분위기로부터 격절(隔絶)되어, 반송실(15) 내의 압력은 대기압이며, 기판 반송 장치(16)는 웨이퍼(W)를 보지(保持)하는 피크(19) 및 상기 피크(19)를 이동시키는 아암부(20)를 갖고, 로더 모듈(14)은 피크(19) 및 상기 피크(19)에 보지된 웨이퍼(W)를 수용하여 반송실(15)의 내부 분위기로부터 격절하는 마이크로 주변 유닛(18)을 구비한다.
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