Belt polishing device with double retainer ring

    公开(公告)号:AU3133202A

    公开(公告)日:2002-07-01

    申请号:AU3133202

    申请日:2001-12-21

    Applicant: LAM RES CORP

    Abstract: An apparatus for use in a chemical mechanical planarization (CMP) system is provided. The apparatus includes a platen capable of introducing fluid beneath a polishing pad and a platen support cover configured to surround the platen. The platen is disposed at a first level and the platen support cover is disposed at a second level, the first level being lower relative to the second level. Both the platen and the platen support cover are configured to be disposed below the polishing pad such that the polishing pad is closer to the second level than the first level. The platen support cover has a width at the second level that is substantially equal around the platen. An apparatus and method for controlling pressure beneath a polishing pad is also provided.

    SELF ASSEMBLED MONOLAYER FOR IMPROVING ADHESION BETWEEN COPPER AND BARRIER LAYER

    公开(公告)号:MY162187A

    公开(公告)日:2017-05-31

    申请号:MYPI20090690

    申请日:2007-08-15

    Applicant: LAM RES CORP

    Abstract: [53] THE EMBODIMENTS FILL THE NEED ENABLING DEPOSITION OF A THIN AND CONFORMAL BARRIER LAYER, AND A COPPER LAYER IN THE COPPER INTERCONNECT WITH GOOD ELECTRO-MIGRATION PERFORMANCE AND WITH REDUCED RISK OF STRESS-INDUCE VOIDING OF COPPER INTERCONNECT. ELECTROMIGRATION AND STRESS-INDUCED VOIDING ARE AFFECTED BY THE ADHESION BETWEEN THE BARRIER LAYER AND THE COPPER LAYER. A FUNCTIONALIZATION LAYER IS DEPOSITED OVER THE BARRIER LAYER TO ENABLE THE COPPER LAYER BEING DEPOSIT IN THE COPPER INTERCONNECT. THE FUNCTIONALIZATION LAYER FORMS STRONG BONDS WITH BARRIER LAYER AND WITH COPPER TO IMPROVE ADHESION PROPERTY BETWEEN THE TWO LAYERS. AN EXEMPLARY METHOD OF PREPARING A SUBSTRATE SURFACE OF A SUBSTRATE TO DEPOSIT A FUNCTIONALIZATION LAYER OVER A METALLIC BARRIER LAYER OF A COPPER INTERCONNECT TO ASSIST DEPOSITION OF A COPPER LAYER IN THE COPPER INTERCONNECT IN ORDER TO IMPROVE ELECTROMIGRATION PERFORMANCE OF THE COPPER INTERCONNECT IS PROVIDED. THE METHOD INCLUDES DEPOSITING THE METALLIC BARRIER LAYER TO LINE THE COPPER INTERCONNECT STRUCTURE IN THE INTEGRATED SYSTEM, AND OXIDIZING A SURFACE OF THE METALLIC BARRIER LAYER. THE METHOD ALSO INCLUDES DEPOSITING THE FUNCTIONALIZATION LAYER OVER THE OXIDIZED SURFACE OF THE METALLIC BARRIER LAYER, AND DEPOSITING THE COPPER LAYER IN THE COPPER INTERCONNECT STRUCTURE AFTER THE FUNCATIONALIZATION LAYER IS DEPOSITED OVER THE METALLIC BARRIER LAYER. FIG. 5D

    METHOD AND APPARATUS FOR MATERIAL DEPOSITION

    公开(公告)号:SG182190A1

    公开(公告)日:2012-07-30

    申请号:SG2012043196

    申请日:2004-12-07

    Applicant: LAM RES CORP

    Abstract: OF THE DISCLOSURE A method and an apparatus are provided for selective heating of a surface of a wafer5 exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately10 defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member.15 Figure 2A

    PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION

    公开(公告)号:SG174752A1

    公开(公告)日:2011-10-28

    申请号:SG2011062197

    申请日:2007-08-17

    Applicant: LAM RES CORP

    Abstract: 59 OF THE DISCLOSURE[177] The embodiments provide processes and integrated systems that produce a metal-to metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.Figure 8A

    CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING

    公开(公告)号:SG174750A1

    公开(公告)日:2011-10-28

    申请号:SG2011062171

    申请日:2007-08-28

    Applicant: LAM RES CORP

    Abstract: OF THE DISCLOSUREA cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions. The embodiments also provide for efficient methods for filling a trench of a substrate.Figure 1

    36.
    发明专利
    未知

    公开(公告)号:DE60314508D1

    公开(公告)日:2007-08-02

    申请号:DE60314508

    申请日:2003-09-30

    Applicant: LAM RES CORP

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    37.
    发明专利
    未知

    公开(公告)号:DE60104903T2

    公开(公告)日:2005-09-08

    申请号:DE60104903

    申请日:2001-12-21

    Applicant: LAM RES CORP

    Abstract: An invention is disclosed for impoved performance in a CMP process using a pressurized membrane (312) and piezoelectric elements (702) as replacements for a platen (308) air bearing. In one embodiment, a platen form impoving performance in CMP applications is disclosed. The platen includes a membrane disposed above the platen, and a plurality of annular bladders (314) disposed below the membrane, wherein the annular bladders are capable of exerting force on the membrane. In this manner, zonal control is provided during the CMP process. In a further embodiment, piezoeletric elements are disposeed above the platen, which exert force on the polishing belt (310) during a CMP process, resulting in improved zonal control during the CMP process.

    CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING

    公开(公告)号:SG10201501328WA

    公开(公告)日:2015-04-29

    申请号:SG10201501328W

    申请日:2007-08-28

    Applicant: LAM RES CORP

    Abstract: A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate

    APPARATUS FOR CLEANING SUBSTRATE USING MEGASONIC POWER

    公开(公告)号:IL190454A

    公开(公告)日:2011-12-29

    申请号:IL19045408

    申请日:2008-03-26

    Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

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