31.
    发明专利
    未知

    公开(公告)号:DE60314508T2

    公开(公告)日:2008-02-21

    申请号:DE60314508

    申请日:2003-09-30

    Applicant: LAM RES CORP

    Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

    32.
    发明专利
    未知

    公开(公告)号:AT556431T

    公开(公告)日:2012-05-15

    申请号:AT07007143

    申请日:2003-09-30

    Applicant: LAM RES CORP

    Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

    METHOD AND SYSTEM FOR USING A TWO-PHASES SUBSTRATE CLEANING COMPOUND

    公开(公告)号:MY143763A

    公开(公告)日:2011-07-15

    申请号:MYPI20082382

    申请日:2006-12-19

    Applicant: LAM RES CORP

    Abstract: 1 8 METHOD AND SYSTEM FOR USING A TWO-PHASES SUBSTRATE CLEANING COMPOUND ABSTRACT OF THE DISCLOSURE 1511 CLEANING COMPOUNDS, APPARATUS, AND METHODS TO REMOVE CONTAMINANTS FROM A 5 SUBSTRATE SURFACE ARE PROVIDED. AN EXEMPLARY CLEANING COMPOUND TO REMOVE PARTICULATE CONTAMINANTS FROM A SEMICONDUCTOR SUBSTRATE SURFACE IS PROVIDED. THE CLEANING COMPOUND INCLUDES A VISCOUS LIQUID WITH A VISCOSITY BETWEEN ABOUT I CP TO ABOUT 10,000 O. THE CLEANING COMPOUND ALSO INCLUDES A PLURALITY OF SOLID COMPONENTS DISPERSED IN THE VISCOUS LIQUID, THE PLURALITY OF SOLID COMPONENTS INTERACT WITH THE PARTICULATE CONTAMINANTS ON THE SUBSTRATE SURFACE TO REMOVE THE PARTICULATE CONTAMINANTS FROM THE SUBSTRATE SURFACE,

    SUBSTRATE PREPARATION USING STABILIZED FLUID SOLUTIONS AND METHODS FOR MAKING STABLE FLUID SOLUTIONS

    公开(公告)号:SG169975A1

    公开(公告)日:2011-04-29

    申请号:SG2010097285

    申请日:2006-12-18

    Applicant: LAM RES CORP

    Abstract: A method for making a solution for use in preparing a surface of a substrate is provided. The method includes providing a continuous medium that adds a polymer material to the continuous medium. A fatty acid is adding to the continuous medium having the polymer material, and the polymer material defines a physical network that exerts forces in the solution that overcome buoyancy forces experienced by the fatty acid, thus preventing the fatty acids from moving within the solution until a yield stress of the polymer material is exceeded by an applied agitation. The applied agitation is from transporting the solution from a container to a preparation station that applies the solution to the surface of the substrate.

    36.
    发明专利
    未知

    公开(公告)号:AT467230T

    公开(公告)日:2010-05-15

    申请号:AT05251901

    申请日:2005-03-29

    Applicant: LAM RES CORP

    Abstract: A method for processing a substrate is provided which includes generating a fluid meniscus to process the substrate and applying the fluid meniscus to a surface of the substrate. The method further includes reducing evaporation of fluids from a surface in the substrate processing environment.

    SUBSTRATE PREPARATION USING STABILIZED FLUID SOLUTIONS AND METHODS FOR MAKING STABLE FLUID SOLUTIONS

    公开(公告)号:MY149848A

    公开(公告)日:2013-10-31

    申请号:MYPI20082419

    申请日:2006-12-18

    Applicant: LAM RES CORP

    Abstract: A METHOD FOR MAKING A SOLUTION FOR USE IN PREPARING A SURFACE OF A SUBSTRATE IS PROVIDED. THE METHOD INCLUDES PROVIDING (602) A CONTINUOUS MEDIUM THAT ADDS (604) A POLYMER MATERIAL TO THE CONTINUOUS MEDIUM. A FATTY ACID IS ADDED TO THE CONTINUOUS MEDIUM HAVING THE POLYMER MATERIAL, AND THE POLYMER MATERIAL DEFINES A PHYSICAL NETWORK THAT EXERTS FORCES IN THE SOLUTION THAT OVERCOME BUOYANCY FORCES EXPERIENCED BY THE FATTY ACID, THUS PREVENTING THE FATTY ACIDS FROM MOVING WITHIN THE SOLUTION UNTIL A YIELD STRESS OF THE POLYMER MATERIAL IS EXCEED BY AN APPLIED AGITATION. THE APPLIED AGITATION IS FROM TRANSPORTING THE SOLUTION FROM A CONTAINER TO A PREPARATION STATION THAT APPLIES THE SOLUTION TO THE SURFACE OF THE SUBSTRATE.

    METHOD OF LOW-K DIELECTRIC FILM REPAIR

    公开(公告)号:SG178798A1

    公开(公告)日:2012-03-29

    申请号:SG2012011540

    申请日:2008-01-24

    Applicant: LAM RES CORP

    Abstract: METHOD OF LOW-K DIELECTRIC FILM REPAIRAn apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.Fig. 2E

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