公开(公告)号：SG11201401989UA

公开(公告)日：2014-09-26

申请号：SG11201401989U

申请日：2012-11-01

Applicant: LAM RES CORP

Inventor： DHINDSA RAHINDER ,  MARAKHTANOV ALEXEI ,  DELGADINO GERARDO ,  HUDSON ERIC ,  YEN BI MING ,  BAILEY ANDREW D III

IPC: H01L21/306

公开(公告)号：AT543204T

公开(公告)日：2012-02-15

申请号：AT04780271

申请日：2004-08-06

Applicant: LAM RES CORP

Inventor： RUSU CAMELIA ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  SRINIVASAN MUKUND ,  LI LUMIN ,  KOZAKEVICH FELIX

IPC: H01L21/00 ,  B23B3/10 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311 ,  H01L21/467 ,  H05H1/46

Abstract: A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

公开(公告)号：SG174501A1

公开(公告)日：2011-10-28

申请号：SG2011068269

申请日：2010-04-06

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  HUDSON ERIC ,  DHINDSA RAJINDER ,  BAILEY ANDREW

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion.

公开(公告)号：SG173353A1

公开(公告)日：2011-08-29

申请号：SG2011049541

申请日：2007-07-06

Applicant: LAM RES CORP

Inventor： KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

Abstract: An apparatus is provided for semiconductor wafer plasma processing. Theapparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electricpotential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes. Figure 1

公开(公告)号：SG10201500055UA

公开(公告)日：2015-02-27

申请号：SG10201500055U

申请日：2007-07-06

Applicant: LAM RES CORP

Inventor： KEIL DOUGLAS ,  LI LUMIN ,  SADJADI REZA ,  HUDSON ERIC ,  LENZ ERIC ,  DHINDSA RAJINDER

Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

公开(公告)号：SG11201402553UA

公开(公告)日：2014-09-26

申请号：SG11201402553U

申请日：2012-11-16

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  BISE RYAN ,  LI LUMIN ,  NAM SANG KI ,  ROGERS JIM ,  HUDSON ERIC ,  DELGADINO GERARDO ,  BAILEY III ANDREW D ,  KELLOGG MIKE ,  DE LA LLERA ANTHONY

IPC: C23F1/08

公开(公告)号：SG11201400364RA

公开(公告)日：2014-04-28

申请号：SG11201400364R

申请日：2012-08-17

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  DHINDSA RAJINDER ,  HUDSON ERIC ,  BAILEY III ANDREW D

IPC: H01L21/3065 ,  C23F1/08 ,  H01L21/306

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF-period, and to assist in the re-striking of the bottom plasma during the ON-period.

公开(公告)号：SG184777A1

公开(公告)日：2012-10-30

申请号：SG2012070926

申请日：2008-09-29

Applicant: LAM RES CORP

Inventor： MARAKHTANOV ALEXEI ,  BENJAMIN NEIL ,  HUDSON ERIC ,  DHINDSA RAJINDER

Abstract: METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY COUPLED AND AN INDUCTIVELYCOUPLED PLASMA PROCESSINC SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.Fig. 3A

公开(公告)号：SG171840A1

公开(公告)日：2011-07-28

申请号：SG2011038577

申请日：2009-12-16

Applicant: LAM RES CORP

Inventor： HUDSON ERIC ,  FISCHER ANDREAS

Abstract: A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.

公开(公告)号：AU2003284890A8

公开(公告)日：2004-05-13

申请号：AU2003284890

申请日：2003-10-22

Applicant: LAM RES CORP

Inventor： MCMILLIN BRIAN K ,  MARKS JEFFREY ,  HUDSON ERIC

IPC: H01L21/311 ,  H01L21/66 ,  H01L21/768 ,  H01J37/32

Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.