公开(公告)号：DE60219343D1

公开(公告)日：2007-05-16

申请号：DE60219343

申请日：2002-10-09

Applicant: LAM RES CORP

Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：AT358887T

公开(公告)日：2007-04-15

申请号：AT02801663

申请日：2002-10-09

Applicant: LAM RES CORP

Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：SG10201502437TA

公开(公告)日：2015-10-29

申请号：SG10201502437T

申请日：2015-03-27

Applicant: LAM RES CORP

Inventor： SHEN MEIHUA ,  SINGH HARMEET ,  TAN SAMANTHA S H ,  MARKS JEFFREY ,  LILL THORSTEN ,  JANEK RICHARD P ,  YANG WENBING ,  SHARMA PRITHU

Abstract: A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds.

公开(公告)号：SG10201406081QA

公开(公告)日：2015-04-29

申请号：SG10201406081Q

申请日：2014-09-25

Applicant: LAM RES CORP

Inventor： GUHA JOYDEEP ,  REDDY SIRISH K ,  CHATTOPADHYAY KAUSHIK ,  MOUNTSIER THOMAS W ,  EPPLER AARON ,  LILL THORSTEN ,  VAHEDI VAHID ,  SINGH HARMEET

Abstract: A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.

公开(公告)号：SG189923A1

公开(公告)日：2013-06-28

申请号：SG2013029137

申请日：2011-10-31

Applicant: LAM RES CORP

Inventor： SINGH HARMEET

Abstract: Abstract A heating plate for a substrate support assembly in a semiconductor plasma processing apparatus, comprises multiple independently controllable planar heater zones arranged in a scalable multiplexing layout, and electronics to independently control and power the planar heater zones. Each planar heater zone includes one or more heater elements made of an insulator-conductor composite. A substrate support assembly in which the heating plate is incorporated includes an electrostatic clamping electrode and a temperature controlled base plate. Methods for manufacturing the heating plate include bonding together ceramic sheets having planar heater zones, power supply lines, power return lines and vias.

公开(公告)号：DE60219343T2

公开(公告)日：2007-12-13

申请号：DE60219343

申请日：2002-10-09

Applicant: LAM RES CORP

Inventor： COOPERBERG DAVID J ,  VAHEDI VAHID ,  RATTO DOUGLAS ,  SINGH HARMEET ,  BENJAMIN NEIL

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01L21/205 ,  H01L21/3065

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：AU2002356543A1

公开(公告)日：2003-04-28

申请号：AU2002356543

申请日：2002-10-09

Applicant: LAM RES CORP

Inventor： VAHEDI VAHID ,  BENJAMIN NEIL ,  SINGH HARMEET ,  COOPERBERG DAVID J ,  RATTO DOUGLAS

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/50

Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.

公开(公告)号：SG10201602785TA

公开(公告)日：2016-05-30

申请号：SG10201602785T

申请日：2012-04-10

Applicant: LAM RES CORP

Inventor： HOLLAND JOHN PATRICK ,  VENTZEK PETER L G ,  SINGH HARMEET ,  SHINAGAWA JUN ,  KOSHIISHI AKIRA

Abstract: PROBLEM TO BE SOLVED: To improve separate control of the ion concentration and the radical concentration in plasma.SOLUTION: A semiconductor substrate processing system 300 includes a chamber 301, a substrate support 303, and a separate plasma generation chamber 355. The system also includes a plurality of fluid transmission pathways 316 fluidly connecting the plasma generation chamber 355 to the chamber 301. The system further includes an electron beam source 363 for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. The electron beam source 363 is defined to transmit an electron beam through the processing chamber above and across the substrate support 303.SELECTED DRAWING: Figure 3A

公开(公告)号：SG10201508636RA

公开(公告)日：2015-11-27

申请号：SG10201508636R

申请日：2011-09-28

Applicant: LAM RES CORP

Inventor： SINGH HARMEET

Abstract: Described herein is a method of detecting fault conditions in a multiplexed multi-heater-zone heating plate for a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus.

公开(公告)号：SG10201401112YA

公开(公告)日：2014-11-27

申请号：SG10201401112Y

申请日：2014-03-31

Applicant: LAM RES CORP

Inventor： SINGH HARMEET ,  LILL THORSTEN ,  VAHEDI VAHID ,  PATERSON ALEX ,  TITUS MONICA ,  KAMARTHY GOWRI

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.