기판 재치대의 온도 제어 시스템 및 온도 제어 방법
    42.
    发明公开
    기판 재치대의 온도 제어 시스템 및 온도 제어 방법 有权
    基板安装表温控系统及温度控制方法

    公开(公告)号:KR1020110040724A

    公开(公告)日:2011-04-20

    申请号:KR1020100099915

    申请日:2010-10-13

    CPC classification number: H01L21/67248 H01L21/67109

    Abstract: PURPOSE: A temperature control system and temperature control method for a substrate mounting table are provided to prevent partial heat of a heating unit from being absorbed by a second heat medium, thereby quickly preventing a temperature increase of a substrate. CONSTITUTION: A chamber(11) receives a wafer for a semiconductor device. A cylindrical susceptor(12) is arranged in the lower part of the chamber. A heater unit(14) and a heat medium flow path(15) are embedded in the susceptor. A shower head(13) faces the susceptor in the upper part of the chamber. The shower head has a disk shape. The shower head includes a buffer chamber(17) and a plurality of gas holes(18) which connects the buffer chamber with a processing space.

    Abstract translation: 目的:提供一种用于基板安装台的温度控制系统和温度控制方法,以防止加热单元的部分热被第二热介质吸收,从而快速防止基板的温度升高。 构成:室(11)接收用于半导体器件的晶片。 圆柱形基座(12)布置在腔室的下部。 加热器单元(14)和热介质流路(15)嵌入在基座中。 淋浴头(13)面向腔室上部的基座。 淋浴头具有盘形。 淋浴头包括缓冲室(17)和连接缓冲室与处理空间的多个气孔(18)。

    표면 처리 방법
    43.
    发明公开
    표면 처리 방법 有权
    表面处理方法

    公开(公告)号:KR1020110005661A

    公开(公告)日:2011-01-18

    申请号:KR1020100066540

    申请日:2010-07-09

    Abstract: PURPOSE: A surface processing method is provided to eliminate all the fractured layers formed on the surface of the member including the fractured layer of a stepped part by reforming the member surface. CONSTITUTION: A focus ring(25) is configured by a ring-shaped member having a step(25a) on the inner side. The step is formed in response to the outer side of a wafer. An upper side(25d), a lower side(25e), and sides(25g, 25f) of the focus ring are formed by the mechanical polishing. A horizontal part(25b) and a corner(25c) of the step are polished manually.

    Abstract translation: 目的:提供表面处理方法,通过重构构件表面来消除在包括阶梯部分的断裂层的构件的表面上形成的所有断裂层。 构成:聚焦环(25)由在内侧具有台阶(25a)的环状构件构成。 该步骤响应于晶片的外侧形成。 通过机械抛光形成聚焦环的上侧(25d),下侧(25e)和侧面(25g,25f)。 手工抛光台阶的水平部分(25b)和拐角(25c)。

    플라즈마 처리장치용의 소모품의 재이용 방법
    44.
    发明公开
    플라즈마 처리장치용의 소모품의 재이용 방법 审中-实审
    在等离子体加工设备中使用消耗部件的方法

    公开(公告)号:KR1020100133910A

    公开(公告)日:2010-12-22

    申请号:KR1020100055307

    申请日:2010-06-11

    Abstract: PURPOSE: A consumable parts reusing method for a plasma processing apparatus is provided to improve the quality of reused consumable parts by cleaning the surface of the consumable parts before a silicon carbide deposition process is implemented. CONSTITUTION: Silicon carbide is deposited to prepared silicon carbide lump through a chemical vapor deposition process. The silicon carbide lump is processed to prepare consumable parts for a plasma processing apparatus in a pre-set shape. A plasma processing process is implemented with respect to a substrate using the consumable parts. The surface of the consumable parts is cleaned. Silicon carbide is re-deposited on the surface of the consumable parts in order to prepare another silicon carbide lump(42).

    Abstract translation: 目的:提供等离子体处理装置的消耗部件再利用方法,以在实施碳化硅沉积工艺之前通过清洁消耗部件的表面来提高再利用的消耗部件的质量。 构成:通过化学气相沉积工艺沉积碳化硅以制备碳化硅块。 处理碳化硅块,以预先设定的形状制备等离子体处理装置的消耗部件。 使用消耗部件相对于基板实施等离子体处理工艺。 消耗部件的表面被清洁。 为了制备另一个碳化硅块(42),将碳化硅再沉积在消耗部件的表面上。

    기판 탑재대의 제조 방법
    45.
    发明公开
    기판 탑재대의 제조 방법 有权
    制造基板安装表的方法

    公开(公告)号:KR1020080055646A

    公开(公告)日:2008-06-19

    申请号:KR1020070127619

    申请日:2007-12-10

    CPC classification number: H01L21/68757

    Abstract: A method for fabricating a substrate mounting table is provided to avoid contamination caused by spray residue by preventing spray residue from being left in a coolant gas supply path. A removable coating layer is formed on the inner wall of a gas supply path confronting at least a gas discharge hole(511). A ceramic spray layer(10) is formed on the mounting surface of a substrate. The coating layer is eliminated. While compressed gas is discharged from the gas discharge hole in the ceramic spray process, ceramic is sprayed onto the mounting surface.

    Abstract translation: 提供了一种用于制造衬底安装台的方法,以通过防止喷雾残留物留在冷却剂气体供应路径中来避免喷雾残留引起的污染。 至少在气体排出孔(511)的气体供给路径的内壁上形成有可移除的涂层。 陶瓷喷涂层(10)形成在基板的安装表面上。 消除涂层。 当在陶瓷喷涂工艺中压缩气体从气体排出孔排出时,陶瓷被喷到安装表面上。

    처리 장치 부품의 조립 기구 및 그 조립 방법
    47.
    发明公开
    처리 장치 부품의 조립 기구 및 그 조립 방법 有权
    装配加工装置部分的机构和方法

    公开(公告)号:KR1020050047134A

    公开(公告)日:2005-05-19

    申请号:KR1020057005918

    申请日:2001-05-16

    CPC classification number: H01J37/32458

    Abstract: A processing device capable of being maintained easily and reducing a burden on a worker and a method of maintaining the processing device; the processing device, comprising an upper electrode unit (106) forming the ceiling part of a processing chamber (102) of an etching device (100) having a lower assembly (128) on the processing chamber (102) side including upper electrodes (130) and an upper assembly (126) on a power supply side including an electro-body (144); the method of maintaining the processing device, comprising the steps of releasing a lock mechanism (156), solely raising the upper assembly (126) by a lift mechanism (164) for removal, and performing the maintenance of the upper assembly (126) and/or the lower assembly (128), and then locking the lock mechanism (156), raising the upper and lower assemblies (126, 128) integrally with each other by the lift mechanism (164) for removal, and performing the maintenance of the internal parts in the processing chamber (102).

    Abstract translation: 能够容易地维护并减轻对工人的负担的处理装置和维护处理装置的方法; 所述处理装置包括上部电极单元(106),其形成在处理室(102)侧上具有下部组件(128)的包括上部电极(130)的蚀刻装置(100)的处理室(102)的顶部 )和包括电子体(144)的电源侧的上部组件(126); 维护处理装置的方法包括以下步骤:释放锁定机构(156),通过用于移除的提升机构(164)单独提升上部组件(126),并执行上部组件(126)的维护和 /或下部组件(128),然后锁定锁定机构(156),通过提升机构(164)将上部和下部组件(126,128)彼此一体地提升以便移除,并执行维护 处理室(102)中的内部部件。

    처리 장치 및 그 유지 보수 방법
    49.
    发明公开
    처리 장치 및 그 유지 보수 방법 有权
    처리장치및그유지보수방법

    公开(公告)号:KR1020030013419A

    公开(公告)日:2003-02-14

    申请号:KR1020027015433

    申请日:2001-05-16

    CPC classification number: H01J37/32458

    Abstract: 유지 보수를 용이하게 실행하여 작업자의 부담을 경감 가능한 처리 장치 및 그 유지 보수 방법을 제공한다. 에칭 장치(100)의 처리실(102)의 천정부를 구성하는 상부 전극 유닛(106)은 상부 전극(130)을 포함하는 처리실(102)측의 하부 조립체(128)와, 일렉트로-바디(144)를 포함하는 전력 공급측의 상부 조립체(128)로 구성된다. 로크 기구(156)를 해제하고, 승강 기구(164)에 의해 상부 조립체(126)를 단독으로 상승시켜 분리한 후, 상부 조립체(126) 및/또는 하부 조립체(128)의 유지 보수를 한다. 로크 기구(156)를 로크하여, 승강 기구(164)에 의해 상부 및 하부 조립체(126, 128)를 일체적으로 상승시켜 분리한 후, 처리실(102)내의 유지 보수를 실행한다.

    Abstract translation: 提供一种能够容易地进行维护并且能够减轻作业者的负担的处理装置以及维护该装置的方法。 构成蚀刻装置100的处理室102的顶部的上部电极单元106由包括上部电极130的处理室102侧的下部组件128和包括电源侧的上部组件128构成 释放锁定机构156,并且在上部组件126被升降机构164独立地升起并移除之后,执行上部组件126和/或下部组件128的维护。 锁定机构156被锁定,并且在上部组件126和下部组件128通过提升机构164整体地升起和移除之后,执行处理室102的内部的维护。

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