公开(公告)号：AU2003277212A1

公开(公告)日：2004-04-19

申请号：AU2003277212

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN ,  LARIOS JOHN M DE ,  GARCIA JAMES P

IPC: H01L21/00

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

公开(公告)号：MY147719A

公开(公告)日：2013-01-15

申请号：MYPI20052853

申请日：2005-06-22

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  MARASCHIN BOB ,  BOYD JOHN ,  REDEKER FRED C ,  WOODS CARL

IPC: H01L21/288 ,  C25D7/12

Abstract: FIRST AND SECOND ELECTRODES (107A, 107B) ARE DISPOSED AT FIRST AND SECOND LOCATIONS, RESPECTIVELY, PROXIMATE TO A PERIPHERY OF A WAFER SUPPORT (103), WHEREIN THE FIRST AND SECOND LOCATION ARE SUBSTANTIALLY OPPOSED TO EACH OTHER RELATIVE TO THE WAFER SUPPORT. EACH OF THE FIRST AND SECOND ELECTRODES CAN BE MOVED TO ELECTRICALLY CONNECT WITH AND DISCONNECT FROM A WAFER (101) HELD BY THE WAFER SUPPORT. AN ANODE (109) IS DISPOSED OVER AND PROXIMATE TO THE WAFER SUCH THAT A MENISCUS (111) OF ELECTROPLATING SOLUTION IS MAINTAINED BETWEEN THE ANODE AND THE WAFER. AS THE ANODE MOVES OVER THE WAFER FROM THE FIRST LOCATION TO THE SECOND LOCATION, AN ELECTRIC CURRENT IS APPLIED THROUGH THE MENISCUS BETWEEN THE ANODE AND THE WAFER. ALSO, AS THE ANODE IS MOVED OVER THE WAFER, THE FIRST AND SECOND ELECTRODES ARE CONTROLLED TO CONNECT WITH THE WAFER WHILE ENSURING THE ANODE DOES NOT PASS OVER AN ELECTRODE THAT IS CONNECTED.

公开(公告)号：SG174749A1

公开(公告)日：2011-10-28

申请号：SG2011062163

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

Abstract: OF THE DISCLOSURE[53] The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the bather layer metal-rich prior copper deposition and by limiting the amount of oxygen the bather layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the bather layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the bather layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic bather layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic bather layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic bather oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.Figure 5D

公开(公告)号：IL161550A

公开(公告)日：2010-12-30

申请号：IL16155004

申请日：2004-04-21

Applicant: LAM RES CORP ,  LARIOS JOHN M DE ,  GARCIA JAMES P ,  WOODS CARL A ,  RAVKIN MICHAEL ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

Inventor： LARIOS JOHN M DE ,  GARCIA JAMES P ,  WOODS CARL A ,  RAVKIN MICHAEL ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: C25D5/22 ,  C25D7/12 ,  H01L21/00

Abstract: A manifold for use in preparing a surface of a substrate, comprising: the manifold defined by a head that includes, a first portion in the manifold having a plurality of conduits to deliver a first fluid onto the surface of the substrate and a plurality of conduits for removing the first fluid from the surface of the substrate to define a first process window in the first portion of the manifold, a first fluid meniscus configured to be maintained in the first process window of the manifold; and a second portion in the manifold having a plurality of conduits to deliver a second fluid onto the surface of the substrate and a plurality of conduits for removing the second fluid from the surface of the substrate to define a second process window in the second portion of the manifold, a second fluid meniscus configured to be maintained in the second process window of the manifold; wherein the head is operable to be placed in proximity to the surface of the substrate so as to orient the first process window and the second process window toward the surface of the substrate.

公开(公告)号：MY137557A

公开(公告)日：2009-02-27

申请号：MYPI20041056

申请日：2004-03-25

Applicant: LAM RES CORP

Inventor： REDEKER FRED C ,  BOYD JOHN

IPC: H01L21/288 ,  H01L21/768

Abstract: A PLANARIZED CONDUCTIVE MATERIAL IS FORMED OVER A SUBSTRATE (120) INCLUDING NARROW (108) AND WIDE FEATURES (106). THE CONDUCTIVE MATERIAL IS FORMED THROUGH A SUCCESSION OF DEPOSITION PROCESS. A FIRST DEPOSITION PROCESS FORMS A FIRST LAYER (900) OF THE CONDUCTIVE MATERIAL THAT FILLS THE NARROW FEATURES (108) AND AT LEAST PARTIALLY FILLS THE WIDE FEATURES (106). A SECOND DEPOSITION PROCESS FORMS A SECOND LAYER (1000) OF THE CONDUCTIVE MATERIAL WITHIN CAVITIES (904) IN THE FIRST LAYER (900).A FLEXIBLE MATERIAL (1200) CAN REDUCE A THICKNESS OF THE FIRST LAYER (900) ABOVE THE SUBSTRATE (102) WHILE DELIVERING A SOLUTION TO THE CAVITIES (904) TO FORM THE SECOND LAYER THEREIN. THE FLEXIBLE MATERIAL (1200) CAN BE A POROUS MEMBRANE ATTACHED TO A PRESSURIZABLE RESERVOIR FILLED WITH THE SOLUTION. THE FLEXIBLE MATERIAL CAN ALSO BE A POROMERIC MATERIAL WETTED WITH THE SOLUTION.

公开(公告)号：SG149019A1

公开(公告)日：2009-01-29

申请号：SG2008092058

申请日：2004-12-07

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  BOYD JOHN ,  THIE WILLIAM ,  MARASCHIN BOB ,  REDEKER FRED C ,  COOK JOEL M

IPC: C23C18/16 ,  C23C18/54

Abstract: METHOD AND APPARATUS FOR MATERIAL DEPOSITION A method and an apparatus are provided for selective heating of a surface of a wafer exposed to an electroless plating solution. Selective heating by a radiant energy source causes a temperature increase at an interface between the wafer surface and the electroless plating solution. This temperature increase causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source. Additionally, a planar member can be positioned over and proximate to the wafer surface to entrap electroless plating solution between the planar member and the wafer surface. Material deposited through the plating reactions forms a planarizing layer that conforms to a planarity of the planar member. Fig 2A

公开(公告)号：PL374502A1

公开(公告)日：2005-10-31

申请号：PL37450203

申请日：2003-09-30

Applicant: LAM RES CORP

Inventor： DE LARIOS JOHN M ,  GARCIA JAMES P ,  WOODS CARL ,  RAVKIN MIKE ,  REDEKER FRITZ ,  BOYD JOHN ,  NICKHOU AFSHIN

IPC: H01L21/00

Abstract: One of many embodiments of a substrate preparation system is provided which includes a head having a head surface where the head surface is proximate to a surface of the substrate. The system also includes a first conduit for delivering a first fluid to the surface of the substrate through the head, and a second conduit for delivering a second fluid to the surface of the substrate through the head, where the second fluid is different than the first fluid. The system also includes a third conduit for removing each of the first fluid and the second fluid from the surface of the substrate where the first conduit, the second conduit and the third conduit act substantially simultaneously. In an alternative embodiment, a method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

公开(公告)号：AU2003299889A8

公开(公告)日：2004-09-06

申请号：AU2003299889

申请日：2003-12-23

Applicant: LAM RES CORP

Inventor： KNOP ROBERT ,  THIE WILLIAM ,  BOYD JOHN ,  ANDERSON THOMAS W ,  SMITH MICHAEL G R ,  KUTHI ANDRAS

IPC: B06B1/02 ,  B08B3/10 ,  B08B3/12 ,  H01L21/00 ,  H01L21/302

Abstract: system and method of cleaning a substrate (202) includes a megasonic chamber (206) that includes a transducer (210) and a substrate (202). The transducer (210) is being oriented toward the substrate (202). A variable distance d separates the transducer (210) and the substrate (202). The system (200) also includes a dynamically adjustable RF generator (212) that has an output coupled to the transducer. The dynamically adjustable RF generator (212) can be controlled by a phase comparison of an oscillator output (306) voltage and a phase of an RF generator output voltage. The dynamically adjustable RF generator (212) can also be controlled by monitoring a peak voltage of an output signal and controlling the RF generator to maintain the peak voltage within a predetermined voltage range. The dynamically adjustable RF generator (212) can also be controlled by dynamically controlling a variable DC power supply voltage.

公开(公告)号：AU3288902A

公开(公告)日：2002-07-01

申请号：AU3288902

申请日：2001-12-21

Applicant: LAM RES CORP

Inventor： KISTLER ROD ,  BOYD JOHN ,  OWCZARZ ALEK

IPC: B24B21/04 ,  B24B37/12 ,  B24B49/16 ,  B24D9/08 ,  B24B37/04

Abstract: An invention is disclosed for improved performance in a CMP process using piezoelectric elements as a replacement for a platen air bearing. In one embodiment, a platen for improving performance in CMP applications is disclosed. The platen includes a plurality of piezoelectric elements disposed above the platen. In operation, the piezoelectric elements are used to exert force on the polishing belt during a CMP process. In this manner, zonal control is provided during the CMP process.