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公开(公告)号：KR1020140127681A
公开(公告)日：2014-11-04
申请号：KR1020130046345
申请日：2013-04-25
Applicant: 한국화학연구원
CPC classification number: C07F5/003 , C23C16/305
Abstract: 본발명은하기화학식 1로표시되는인듐전구체에관한것으로, 상기인듐전구체는황을포함하고있는전구체로서박막제조중에별도의황을첨가시키지않아도되는장점이있고열적안정성과휘발성이향상되어양질의황화인듐박막을형성할수 있다.[화학식 1](상기식에서, R, R는각각독립적으로 C1-C10의선형또는분지형알킬기이고, R, R는각각독립적으로 C1-C10의선형또는분지형의알킬기또는 C1-C10의선형또는분지형의플루오르화알킬기이며, n은 1 내지 3 범위의정수에서선택된다.)
Abstract translation: 本发明涉及由化学式1表示的铟前体。铟前体含有硫，在薄膜制造期间不需要添加额外的硫作为前体，并且能够通过改进的热稳定性形成高质量的硫化铟薄膜 和波动。 在化学式1中，R 1和R 2分别是C 1 -C 10的直链或支链烷基。 R_3和R_4是C1-C10的直链或支链烷基或C1-C10的内衬或支链氟化烷基。 n为1-3的整数。
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公开(公告)号：KR1020140108885A
公开(公告)日：2014-09-15
申请号：KR1020130022728
申请日：2013-03-04
Applicant: 한국화학연구원
IPC: C30B13/14
Abstract: A pressure vessel for single crystal growth using shrink fitting of the present invention comprises: a pressure vessel body manufactured by a heat-resistant alloy; a liner manufactured with a material having corrosion resistance and inserted into the pressure vessel body; and a lower part supporter inserted through the lower part of the pressure vessel body and supporting the lower part of the liner, wherein the liner is inserted into the pressure vessel body after the pressure vessel body is heated with a heating furnace.
Abstract translation: 本发明的收缩配合用于单晶生长的压力容器包括：由耐热合金制成的压力容器主体; 由具有耐腐蚀性的材料制成的衬套插入到压力容器主体中; 以及通过压力容器本体的下部插入并支撑衬套的下部的下部支撑件，其中在用加热炉加压压力容器主体之后，将衬套插入压力容器主体。
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公开(公告)号：KR101336743B1
公开(公告)日：2013-12-03
申请号：KR1020120011219
申请日：2012-02-03
Applicant: 한국화학연구원
Abstract: 본 발명은 단결정 성장 장치에 있어서, 원료 물질들을 배치하는 바스켓, 종자 결정들을 결속할 수 있는 랙 및 상기 바스켓과 상기 랙 사이에 위치하는 대류조절판을 포함하고, 상기 바스켓과 상기 랙이 분리되어 상기 대류조절판을 교체할 수 있는 것을 특징으로 하는 것을 특징으로 한다.
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54.发明公开
公开(公告)号：KR1020130007509A
公开(公告)日：2013-01-18
申请号：KR1020120135577
申请日：2012-11-27
Applicant: 한국화학연구원
IPC: H01L31/04 , H01L31/0224 , H01B1/14
CPC classification number: Y02E10/50 , H01L31/04 , H01B1/14 , H01L31/0224
Abstract: PURPOSE: A contact formation of silicon solar cells using conductive ink with nano-sized glass frit is provided to minimize the loss of electrode material and to reduce production costs. CONSTITUTION: An emitter layer(202) is formed on the upper part of a substrate. A reflection barrier layer is formed on the emitter layer. A first conductive layer(204) is patterned in the reflection barrier layer. A second conductive layer(205) is formed in the upper surface of the first conductive layer. A conductive ink composite is used in the process for forming the second conductive layer.
Abstract translation: 目的：提供使用具有纳米尺寸玻璃料的导电油墨的硅太阳能电池的接触形成，以最小化电极材料的损失并降低生产成本。 构成：在衬底的上部形成发射极层（202）。 在发射极层上形成反射阻挡层。 在反射阻挡层中图案化第一导电层（204）。 第二导电层（205）形成在第一导电层的上表面中。 在形成第二导电层的工艺中使用导电油墨复合材料。
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公开(公告)号：KR1020120127070A
公开(公告)日：2012-11-21
申请号：KR1020110045303
申请日：2011-05-13
Applicant: 한국화학연구원
CPC classification number: C01B32/194 , C01B2204/22 , C23C16/26 , H01B1/04 , H01L21/2026
Abstract: PURPOSE: Graphene and a manufacturing method of the same, a semiconductor device using the same, and a manufacturing method of the semiconductor are provided to control the electric characteristic of the graphene by generating the structural change of the graphene. CONSTITUTION: A manufacturing method of graphene controls the electric characteristic of graphene(104) by generating the structural change of the graphene. The structural change of the graphene is generated by doping nitrogen into the graphene based on nitrogen plasma treatment. The structural change of the graphene controls the electric characteristic of the graphene based on conductivity. The conductivity is controlled by the power of nitrogen plasma, the flux of nitrogen, the generating pressure of the nitrogen plasma, and the contact time of the nitrogen plasma and the graphene.
Abstract translation: 目的：提供石墨烯及其制造方法，使用该方法的半导体装置和半导体的制造方法，以通过产生石墨烯的结构变化来控制石墨烯的电特性。 构成：石墨烯的制造方法通过产生石墨烯的结构变化来控制石墨烯（104）的电特性。 石墨烯的结构变化是通过基于氮等离子体处理将氮掺杂到石墨烯中而产生的。 石墨烯的结构变化基于导电性控制石墨烯的电特性。 电导率由氮等离子体的功率，氮通量，氮等离子体的产生压力以及氮等离子体和石墨烯的接触时间来控制。
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Patent Agency Ranking
公开(公告)号：KR1020120079282A
公开(公告)日：2012-07-12
申请号：KR1020110000493
申请日：2011-01-04
Applicant: 한국화학연구원
CPC classification number: C07F9/94 , C23C16/18 , C23C16/40 , C23C16/45525
Abstract: PURPOSE: A novel bismuth amino alkoxide compound with an amino alkoxide ligand and a method for preparing the same are provided to deposit a thin film or various alloys. CONSTITUTION: A bismuth amino alkoxide compound is denoted by chemical formula 1(Bi[O-A-NR^1R^2]_3) or formula 2(Bi[O-CR^3R^4(CH_2)_m-NR^1R^2]_3). A method for preparing the compound of chemical formula 1 comprises a step of reacting bismuth halide compound of chemical formula 2(BiX) with alkali metal salt of alcohol of chemical formula 4(M[O-A-NR_1R_2]). A bismuth compound of chemical formula 6(Bi[NR^5_2]_3) is prepared by reacting a bismuth halide compound of chemical formula 3(BiX_3) with alkali metal compounds of chemical formula 5(M[NR^5_2]). A bismuth-containing thin film is prepared using the bismuth amino alkoxide compounds as a precursor.
Abstract translation: 目的：提供一种具有氨基醇盐配体的新型铋氨基烷氧基化合物及其制备方法，以沉积薄膜或各种合金。 构成：铋氨基烷氧基化合物由化学式1（Bi [OA-NR] 1R ^ 2] _3）或式2（Bi [O-CR 3 3R 4（CH 2）m-NR 1 R 1）2] _3）。 制备化学式1化合物的方法包括使化学式2（BiX）的卤化铋化合物与化学式4的醇的碱金属盐（M [O-A-NR_1R_2]）反应的步骤。 通过使化学式3（BiX_3）的卤化铋化合物与化学式5的碱金属化合物（M [NR 5 - 5]]反应，制备化学式6的铋化合物（Bi [NR 5/2] _3）。 使用铋氨基醇盐化合物作为前体制备含铋的薄膜。
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公开(公告)号：KR101082335B1
公开(公告)日：2011-11-10
申请号：KR1020100046874
申请日：2010-05-19
Applicant: 한국화학연구원
IPC: H01L29/786
CPC classification number: H01L29/1606 , H01L29/0669
Abstract: PURPOSE: A method for manufacturing a thin film transistor using a two-dimensional graphene nano ribbon is provided to control the length of a graphene nano ribbon by using a Pd catalyst. CONSTITUTION: A source electrode and a drain electrode are connected to both sides of a channel layer. A gate electrode corresponds to the channel layer. A gate insulation layer is formed between the channel layer and the gate electrode. After the gate insulation layer is deposited on the gate electrode, the source electrode and the drain electrode are formed by a lithograph process. A hydrophobic organic layer is laminated after the gate insulation layer, the source electrode, and the drain electrode are surface-processed.
Abstract translation: 目的：提供使用二维石墨烯纳米带制造薄膜晶体管的方法，以通过使用Pd催化剂来控制石墨烯纳米带的长度。 构成：源电极和漏极连接到沟道层的两侧。 栅电极对应于沟道层。 在沟道层和栅电极之间形成栅极绝缘层。 在栅极绝缘层沉积在栅极上之后，源极和漏极通过光刻工艺形成。 在栅极绝缘层，源电极和漏电极进行表面处理之后，层叠疏水性有机层。
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公开(公告)号：KR100567926B1
公开(公告)日：2006-04-07
申请号：KR1020030088657
申请日：2003-12-08
Applicant: 한국화학연구원
IPC: C07D319/12
Abstract: 본 발명은 파라-디옥사논(p-dioxanone)을 정제하는 방법에 관한 것으로, (1) 파라-디옥사논을 냉각시켜 파라-디옥사논을 결정화시키는 단계; (2) 결정화된 파라-디옥사논을 파쇄하고 여과시키는 단계; (3) 여과된 파라-디옥사논 입자를 고진공하에서 파라-디옥사논의 녹는점 이하의 온도에서 건조시키는 단계; 및 (4) 건조된 파라-디옥사논을 열-용융시킨 후 감압하에서 증류하는 단계를 포함하는, 본 발명의 파라-디옥사논의 정제방법에 따르면 99.9% 이상의 고순도 파라-디옥사논을 높은 수율로 간단하게 수득할 수 있다.
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公开(公告)号：KR1020050040529A
公开(公告)日：2005-05-03
申请号：KR1020030075775
申请日：2003-10-29
Applicant: 한국화학연구원
IPC: C07D265/32
Abstract: 본 발명은 N-알킬몰포리논의 제조방법에 관한 것으로, 반응 초기에 2-p-디옥사논 또는 이의 중합체와 1급 알킬아민을 수성 매질 중에서 1:0.8∼1.1의 몰비로 반응시키고, 반응용액에 상기 1급 알킬아민의 수용액을 불활성 기체와 함께 추가로 공급하면서 열린 반응계에서 반응을 진행하는 것을 특징으로 하며, 이러한 본 발명의 방법에 의하면, 짧은 시간 내에 N-알킬몰포리논을 고선택성 및 고수율로 제조할 수 있다.
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60.发明授权복합금속산화물 촉매 및 이의 제조 방법, 및 이를이용하여 프탈산에스테르로부터 프탈라이드를 제조하는 방법 失效복합금속산화물촉매및이의제조방법，및이를이용하여프탈산에스테르로부프라이드를제조하는방복합
公开(公告)号：KR100457067B1
公开(公告)日：2004-11-12
申请号：KR1020020022270
申请日：2002-04-23
Applicant: 한국화학연구원 , 에이케이홀딩스 주식회사
IPC: B01J23/889 , B01J23/80 , B82B1/00 , B82Y30/00
Abstract: PURPOSE: Provided are a composite metal oxide catalyst for vapour phase hydrogenation, a preparation method thereof and a method for preparing phthalide from ester phthalate using the composite metal oxide catalyst, wherein the catalyst exhibits high selectivity, productivity and extended catalytic activity in the process of preparing phthalide from ester phthalate by vapour phase hydrogenation even under the mild conditions of low temperature at 130 to 220 deg.C, low pressure of 1 to 10 atm and low hydrogen/ester phthalate ratio ranging from 500 to 3,000. CONSTITUTION: The catalyst is represented as follows: £CuO(a)ZnO(b)MnO2(c)SiO2(d)|(100-x)M(x), where M is at least one oxide selected from the group consisting of Re oxides, Ru oxides and Ag oxides, a is 20 to 90, b is 0.01 to 10, c is 0.01 to 5, d is 5 to 65 and x is 0.001 to 5, wherein a, b, c, d and x are expressed on the basis of weight. The preparation method of the catalyst comprises the steps of preparing a mixed solution containing copper salt, zinc salt and manganese salt; adding an alkali solution to the mixed solution to coprecipitate copper, zinc and manganese in the form of hydrogel, wherein the temperature of the mixed solution is in the range of 1 to 30 deg.C and pH is kept in the range of 6 to 9; adding nano size colloidal silica to the hydrogel, thereby obtaining a mixed slurry, wherein the colloidal silica is stabilized by NH4¬+, Na¬+ and other alkali metal, and particle size and specific surface area thereof are 4 to 60 nm and 100 to 300 m¬2/g, respectively; hydrothermal aging the mixed slurry at 50 to 100 deg.C for more than 0.5 hr; filtering the mixed slurry after hydrothermal aging to separate cake, followed by washing the cake, wherein the washing is conducted until residual concentration of alkali metal is less than 1000 ppm; and drying and tableting the washed cake.
Abstract translation: 本发明提供一种用于气相氢化的复合金属氧化物催化剂，其制备方法和由该邻苯二甲酸酯用该复合金属氧化物催化剂制备邻苯二甲酸酯的方法，其中该催化剂在该方法中显示出高选择性，生产率和延长的催化活性 即使在130-220℃的低温，1-10atm的低压和500-3000的低氢/酯邻苯二甲酸酯比例的温和条件下，通过气相氢化由邻苯二甲酸酯制备苯酞。 构成：催化剂如下所示：CuO（a）ZnO（b）MnO 2（c）SiO 2（d）|（100-x）M（x），其中M是选自以下的至少一种氧化物： 的Re氧化物，Ru氧化物和Ag氧化物，a为20-90，b为0.01-10，c为0.01-5，d为5-65，x为0.001-5，其中a，b，c，d和x 以重量为基础表示。 该催化剂的制备方法包括以下步骤：制备含铜盐，锌盐和锰盐的混合溶液; 向混合溶液中添加碱溶液，以水凝胶形式共沉淀铜，锌和锰，其中混合溶液的温度在1至30℃的范围内并且pH保持在6至9的范围内 ; 将纳米胶体二氧化硅加入到水凝胶中，由此获得混合浆液，其中胶体二氧化硅通过NH 4 +，Na +和其它碱金属稳定，并且其粒径和比表面积分别为4至60nm和100至100nm 300m＆lt; 2 / g; 在50至100℃下水热老化混合浆料0.5小时以上; 过滤水热老化后的混合浆料以分离滤饼，然后洗涤滤饼，其中进行洗涤直至残余的碱金属浓度小于1000ppm; 并干燥和压片洗涤的蛋糕。
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