公开(公告)号：DE3771930D1

公开(公告)日：1991-09-12

申请号：DE3771930

申请日：1987-03-24

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  FRISCH MARGARET ANN ,  SPEIDELL JAMES LOUIS

IPC: G21K1/087 ,  H01J37/04 ,  H01J37/05 ,  H01J49/48 ,  H01J1/46 ,  H01J3/14

Abstract: A spherical grid for use in instrumentation comprising a rigid non-magnetic frame (10) having a pattern of holes (16). Into each hole a flat wafer (20) is placed, each wafer having etched therein holes defining the grid mesh. The frame maintains the geometric conformal shape allowing large units to be constructed.

公开(公告)号：DE3573190D1

公开(公告)日：1989-10-26

申请号：DE3573190

申请日：1985-06-27

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： CUOMO JEROME JOHN ,  HARPER JAMES MCKELL EDWIN ,  KAUFMAN HAROLD RICHARD ,  SPEIDELL JAMES LOUIS

IPC: H01J37/08 ,  B23K15/00 ,  C23C14/46 ,  H01J37/09 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/265 ,  H01J37/302

Abstract: The present invention provides an ion beam system which produces an ion beam pattern without the need for a mask. A programmable grid (35) is used in combination with an ion beam source (14), where the apertures (54, 56, 68) of the programmable grid (35) can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures (54,56, 68). Depending upon the electrical biasing provided to each of the apertures (54, 56, 68) of the grid (35), different patterns of ions can be extracted through the grid (35). By changing the electrical bias at different locations on the programmable grid (35), these different patterns are produced. The patterns can be used for many applications including patterned deposition, patterned etching and patterned treatment of surfaces.

公开(公告)号：DK151079C

公开(公告)日：1988-05-09

申请号：DK409377

申请日：1977-09-15

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DISTEFANO THOMAS HERMAN ,  WOODALL JERRY MAC PHERSON

IPC: C02F1/14 ,  F24J2/48 ,  F24J2/10 ,  G02B1/10

公开(公告)号：DE3362664D1

公开(公告)日：1986-04-30

申请号：DE3362664

申请日：1983-05-10

Applicant: IBM

Inventor： CUOMO JEROME JOHN

IPC: H01L21/302 ,  H01L21/3065 ,  H01L21/263 ,  C23C14/46

公开(公告)号：DE3171316D1

公开(公告)日：1985-08-14

申请号：DE3171316

申请日：1981-09-09

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  HARPER JAMES MCKELL EDWIN

IPC: H01J37/08 ,  C23C14/32 ,  H01J37/147 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/302 ,  H01J3/14

Abstract: A method and system for deflecting a broad ion plasma beam which includes an ion source for forming an ion plasma, an extraction means for extracting a broad ion plasma beam from the ion plasma, and deflection means including a non-grounded surface located in the path of the ion plasam beam and at an angle to the path for deflecting the ion plasma beam to a target material. A grounded, screen grid is located in front of the deflecting means in the path of the ion plasma. The screen grid has openings which permit passage of the ions in the ion plasma, but block passage of the electrons. The plasma beam is deflected by the deflection means and the grounded, screen grid onto the target material for sputter cleaning, deposition and ion milling applications.

公开(公告)号：DE3167275D1

公开(公告)日：1985-01-03

申请号：DE3167275

申请日：1981-04-10

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  DREYFUS RUSSELL WARREN ,  WOODALL JERRY MCPHERSON

IPC: H01J1/30 ,  H01J1/308 ,  H01J1/34 ,  H01L49/00

Abstract: A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.

公开(公告)号：DE3066485D1

公开(公告)日：1984-03-15

申请号：DE3066485

申请日：1980-06-09

Applicant: IBM

Inventor： CHANDRASHEKHAR G V ,  GAMBINO RICHARD JOSEPH ,  CHAUDHARI PRAVEEN ,  HARPER JAMES MCKEEL EDWIN ,  CUOMO JEROME JOHN

IPC: B23K15/00 ,  H01J3/04 ,  H01J27/02 ,  H01J27/20 ,  H01J37/08 ,  H01L21/265 ,  H01L27/00

Abstract: The present invention describes an ion source which is capable of producing relatively high density ion currents. The ion source employs an electrically biased ionic conductor to supply ions from a reservoir of the atomic species.

公开(公告)号：DE3065501D1

公开(公告)日：1983-12-15

申请号：DE3065501

申请日：1980-04-25

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  HARPER JAMES MCKELL EDWIN ,  KUPSTIS JOHN DEMOSTHENES

IPC: C23F4/00 ,  C23C14/34 ,  C23C14/46 ,  C23C15/00 ,  H01J37/36

公开(公告)号：FI57673B

公开(公告)日：1980-05-30

申请号：FI269373

申请日：1973-08-29

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH

IPC: G02F1/09 ,  C22C19/00 ,  C22C45/04 ,  G02F1/00 ,  G11B11/10 ,  G11B11/105 ,  G11C11/14 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/10

公开(公告)号：DE2809965A1

公开(公告)日：1978-09-14

申请号：DE2809965

申请日：1978-03-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  VECHTEN JAMES ALDEN VAN

IPC: G21F9/02 ,  G21G4/00 ,  G21H1/00 ,  G21H5/00