公开(公告)号：DE10217610A1

公开(公告)日：2003-11-13

申请号：DE10217610

申请日：2002-04-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  STRACK HELMUT ,  TIHANYI JENOE ,  SCHULZE HANS-JOACHIM ,  KAPELS HOLGER

IPC: H01L21/285 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/167 ,  H01L29/32 ,  H01L29/45 ,  H01L29/78 ,  H01L21/28

Abstract: Metal-semiconductor contact comprises a metallizing layer (3) forming an ohmic metal-semiconductor contact arranged on a doped semiconductor layer (1). A first doping material is provided for doping of the semiconductor layer so that the electrically active doping concentration in the semiconductor layer is a fraction of the doping concentration in the semiconductor layer. Independent claims are also included for the following: (1) Semiconductor component arranged in a semiconductor body; (2) Integrated circuit containing the semiconductor component; and (3) Process for the production of the metal-semiconductor contact.

公开(公告)号：DE10052007C1

公开(公告)日：2002-03-07

申请号：DE10052007

申请日：2000-10-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHMANN VOLKER ,  STRACK HELMUT ,  TIHANYI JENOE ,  DEBOY GERALD

IPC: H01L29/06 ,  H01L29/78 ,  H01L21/336

Abstract: The semiconductor component has a semiconductor body (10) provided with a terminal zone (20) of the same conductivity type, at least partially enclosed by a channel zone (24) of the opposite conductivity type, a second terminal zone (30) of the first conductivity type and a number of compensation zones (50) of the second conductivity type. The compensation zones extend vertically through the semiconductor body between its opposite major surfaces and can be provided by doping the walls of a series of openings extending through the thickness of the semiconductor body. An Independent claim for a manufacturing method for a semiconductor component is also included.

公开(公告)号：DE19964214C2

公开(公告)日：2002-01-17

申请号：DE19964214

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/167

Abstract: A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium, thallium and/or palladium, in a cluster-like manner inside an n-conductive region.

公开(公告)号：DE102013212787B4

公开(公告)日：2022-03-03

申请号：DE102013212787

申请日：2013-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  KAHLMANN FRANK ,  MAUDER ANTON ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/328 ,  H01L21/336 ,  H01L29/06 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

Abstract: Verfahren zum Herstellen eines Halbleiterbauelements, wobei das Verfahren aufweist:i. Bereitstellen eines Halbleitersubstrats (110);ii. Herstellen einer Epitaxieschicht (120) auf dem Halbleitersubstrat (110);iii. Einbringen von Dotierstoffatomen eines ersten Dotierungstyps und von Dotierstoffatomen eines zweiten Dotierungstyps in die Epitaxieschicht (120);iv. Herstellen wenigstens eines Grabens (121) in der Epitaxieschicht;v. Auffüllen des wenigstens einen Grabens (121) mit einem monokristallinen Halbleitermaterial; undvi. Diffundieren von Dotierstoffatomen aus dem umliegenden Halbleitermaterial in das Material, das den wenigstens einen Graben (121) auffüllt.

公开(公告)号：DE102014109147A1

公开(公告)日：2015-12-31

申请号：DE102014109147

申请日：2014-06-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： IRSIGLER PETER ,  LAVEN JOHANNES ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/78 ,  H01L21/336

Abstract: Gemäß einer Ausführungsform wird ein Leistungs-Feldeffekttransistor vorgeschlagen, der ein Substrat, einen Kanal, eine Gate-Elektrode, und einen Gate-Isolator umfasst. Der Gate-Isolator ist zumindest teilweise zwischen der Gate-Elektrode und dem Kanal angeordnet, und umfasst ein Material, das eine Hysterese in Bezug auf seine Polarisation aufweist, so dass ein durch eine an der Gate-Elektrode angelegte Spannung erzeugter Schaltzustand des Transistors nach Abschalten der Spannung erhalten bleibt. Ferner wird eine Halbbrückenschaltung vorgeschlagen, umfassend einen High-Side-Transistor gemäß dem erfindungsgemäßen Aufbau, und einen Low-Side-Transistor, sowie Verfahren und Schaltungen zur Ansteuerung.

公开(公告)号：AT510300T

公开(公告)日：2011-06-15

申请号：AT00918684

申请日：2000-03-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  KANERT WERNER ,  GASSEL HELMUT ,  STRACK HELMUT ,  PAIRITSCH HERBERT

IPC: H01L21/336 ,  H01L21/225 ,  H01L21/265 ,  H01L21/331 ,  H01L29/06 ,  H01L29/10 ,  H01L29/739 ,  H01L29/78

Abstract: Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step, and then diffusion of the doping material. Production of a body area (9) of first conductivity type comprises implanting a doping material of first conductivity type into a semiconductor body followed by implanting a doping material of second conductivity type having a lower dose than the first implantation step. The body area has at least one channel region (11) arranged between a source region (10) and a drain region (2, 3) of second conductivity and bordering a gate electrode (5). The body area and the source region extend from a first surface (14) into the semiconductor body, and the drain region extends from a second surface (15) into the semiconductor body. The dosage of the first implantation is 10-1000 times larger than that of the second implantation.

公开(公告)号：DE102004028933B4

公开(公告)日：2009-11-26

申请号：DE102004028933

申请日：2004-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L29/739 ,  H01L29/78

Abstract: A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes establishing a positive temperature gradient in a vertical direction of the semiconductor body proceeding from the one side. The temperature in the region of the one side is higher than the eutectic temperatures of system, so that the metal of the metal layer migrates in the vertical direction into the semiconductor body. The method also includes discontinuing the temperature gradient once the metal reaches the predetermined vertical position in the semiconductor body, in order thereby to obtain the metallic layer at the predetermined position.

公开(公告)号：DE102009012524A1

公开(公告)日：2009-10-01

申请号：DE102009012524

申请日：2009-03-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： OTREMBA RALF ,  HOEGLAUER JOSEF ,  STRACK HELMUT ,  SCHLOEGEL XAVER

IPC: H01L21/60 ,  H01L23/28 ,  H01L23/50

Abstract: A semiconductor module. In one embodiment, at least two semiconductor chips are placed on a carrier. The at least two semiconductor chips are then covered with a molding material. An exposed portion of the at least two semiconductor chips is provided. A first layer of conductive material is applied over the exposed portion of the at least two semiconductor chips to electrically connect to a contact pad on the exposed portion of the at least two semiconductor chips. The at least two semiconductor chips are singulated.

公开(公告)号：DE102007007142A1

公开(公告)日：2008-08-21

申请号：DE102007007142

申请日：2007-02-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KOLLER ADOLF ,  THEUSS HORST ,  OTREMBA RALF ,  HOEGLAUER JOSEF ,  STRACK HELMUT ,  PLOSS REINHARD

IPC: H01L21/50 ,  H01L25/07

Abstract: A panel has a baseplate with an upper first metallic layer and a multiplicity of a vertical semiconductor components. The vertical semiconductor components in each case have a first side with a first load electrode and a control electrode and an opposite second side with a second load electrode. The second side of the semiconductor components is in each case mounted on the metallic layer of the baseplate. The semiconductor components are arranged in such a way that edge sides of adjacent semiconductor components are separated from one another. A second metallic layer is arranged in separating regions between the semiconductor components.

公开(公告)号：DE102007004320A1

公开(公告)日：2008-07-31

申请号：DE102007004320

申请日：2007-01-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  STRACK HELMUT ,  WILLMEROTH ARMIN ,  SCHULZE HANS-JOACHIM

IPC: H01L29/78 ,  H01L21/336

Abstract: The component has a drift zone (20) arranged between two component zones. A drift control zone (30) is arranged in a direction adjacent to the drift zone. A dielectric layer (50) is arranged between the drift zone and the drift control zone. The drift zone has a varying doping and/or a varying material composition based on a dielectric. The drift zone has two sections (21, 22), where doping concentration of the section (22) is selected such that the section (22) has a higher voltage loading capacity than the section (21). An independent claim is also included for a method for manufacturing a semiconductor component.