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公开(公告)号：KR1020170031469A
公开(公告)日：2017-03-21
申请号：KR1020150129053
申请日：2015-09-11
Applicant: 삼성전자주식회사
IPC: H01L27/108 , H01L49/02
CPC classification number: H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876
Abstract: 기판상의비아구조체들, 상기비아구조체들상의스토리지전극들, 상기스토리지전극들의제1 부분들을연결하는제1 서포터, 상기스토리지전극들의상기제1 부분들보다높은레벨에위치한상기스토리지전극들의제2 부분들을연결하는제2 서포터및 상기스토리지전극들의상기제2 부분들보다높은레벨에위치한상기스토리지전극들의제3 부분들을연결하는제3 서포터를포함하고, 상기제3 서포터의상면은상기스토리지전극들의상면들과실질적으로공면을이루는반도체소자가설명된다.
Abstract translation: 连接存储电极的第一部分的第一支撑件，连接存储电极的第一部分的第二支撑件，存储电极的第二部分定位成高于存储电极的第一部分， 以及第三支撑件，将存储电极的第三部分连接到比存储电极的第二部分更高的位置，其中第三支撑件的上表面连接到存储电极的上表面 描述了与半导体元件基本重合的半导体元件。
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公开(公告)号：KR101548674B1
公开(公告)日：2015-09-01
申请号：KR1020090079243
申请日：2009-08-26
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L27/11575 , H01L27/1157 , H01L27/11582 , H01L2924/0002 , H01L2924/00
Abstract: 3차원반도체메모리장치및 그제조방법이제공된다. 3차원반도체메모리장치는서로이격된제 1 콘택영역및 제 2 콘택영역을포함하는기판및 차례로적층된복수의도전패턴들을포함하되, 도전패턴들각각은, 기판의상부면에평행한배선부및 기판의상부면을관통하는방향을따라, 배선부의일단으로부터연장되는콘택연장부를포함하고, 도전패턴들중의적어도하나의콘택연장부는제 1 콘택영역에배치되고, 상기도전라인들중 적어도다른하나의콘택연장부는제 2 콘택영역에배치된다.
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公开(公告)号：KR1020130105238A
公开(公告)日：2013-09-25
申请号：KR1020120080195
申请日：2012-07-23
Applicant: 삼성전자주식회사
IPC: H01L21/20
Abstract: PURPOSE: A method for fabricating a semiconductor device is provided to obtain the high degree of integration by forming a deposition layer on a semiconductor substrate. CONSTITUTION: A semiconductor substrate is loaded into a process chamber. A deposition layer is formed on the semiconductor substrate. The semiconductor substrate is unloaded from the process chamber. A preliminary unit layer is formed on the semiconductor substrate (S110). The process chamber is firstly purged (S115). [Reference numerals] (AA) 1 cycle; (BB) Has the desired thickness of a film been reached ?; (S10) Film forming on a semiconductor substrate; (S110) Preliminary unit layer is formed on a semiconductor substrate by supplying a first process material including a film-controlling material and an electrode material to a process chamber; (S115,S125) Process chamber is firstly purged; (S120) Preliminary unit layer is formed into a unit layer by supplying a second process material to the process chamber
Abstract translation: 目的：提供一种制造半导体器件的方法，通过在半导体衬底上形成沉积层来获得高集成度。 构成：将半导体衬底装载到处理室中。 在半导体衬底上形成沉积层。 半导体衬底从处理室卸载。 在半导体基板上形成预备单位层（S110）。 首先清洗处理室（S115）。 （附图标记）（AA）1循环; （BB）是否已达到所需的胶片厚度？ （S10）半导体基板上的成膜; （S110）通过向处理室供给包括膜控制材料和电极材料的第一处理材料，在半导体基板上形成初步单元层; （S115，S125）首先清洗处理室; （S120）通过向处理室供给第二处理材料，将初级单元层形成为单位层
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公开(公告)号：KR1020120040599A
公开(公告)日：2012-04-27
申请号：KR1020100102105
申请日：2010-10-19
Applicant: 삼성전자주식회사
IPC: H01L21/02 , C23C16/34 , C23C16/455
CPC classification number: C23C16/34 , C23C16/45525 , H01L21/02697
Abstract: PURPOSE: A method for forming a thin metal film is provided to remove a leakage current of a semiconductor device by preventing a dielectric layer from being etched due to metal chloride. CONSTITUTION: A reactant is adsorbed to a processed object(S110). A metal precursor including chlorine is provided(S10). A by-product, after the metal precursor is supplied, is removed by injecting a purge gas(S20). A metal thin film layer is formed by supplying the reactant and reacting the reactant with the metal precursor(S30). The by-product after the reaction is removed by injecting the purge gas(S40).
Abstract translation: 目的：提供一种用于形成薄金属膜的方法，以通过防止由金属氯化物侵蚀电介质层来消除半导体器件的漏电流。 构成：反应物被吸附到被处理物体上（S110）。 提供包含氯的金属前体（S10）。 在供给金属前体之后，通过注入吹扫气体除去副产物（S20）。 通过供给反应物并使反应物与金属前体反应形成金属薄膜层（S30）。 通过注入吹扫气体除去反应后的副产物（S40）。
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公开(公告)号：KR1020110035061A
公开(公告)日：2011-04-06
申请号：KR1020090092615
申请日：2009-09-29
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144 , H01L45/1666
Abstract: PURPOSE: A phase change memory device is provided to form the lower layer of a lower electrode with low resistance by a first structure including titanium silicide and a second structure including titanium nitride. CONSTITUTION: A substrate(100) includes a field area and an active area. A switching device(120) is electrically connected to a word line(104). A lower electrode includes a first structure(124), a second structure(134), and a third structure(136). A phase change material pattern(140) is electrically connected to a lower electrode. An upper electrode(142) is electrically connected to the phase change material pattern.
Abstract translation: 目的：通过包括钛硅化物的第一结构和包括氮化钛的第二结构，提供相变存储器件以形成具有低电阻的下电极的下层。 构成：衬底（100）包括场区域和有源区域。 开关装置（120）电连接到字线（104）。 下电极包括第一结构（124），第二结构（134）和第三结构（136）。 相变材料图案（140）电连接到下电极。 上电极（142）电连接到相变材料图案。
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Patent Agency Ranking
公开(公告)号：KR1020080070441A
公开(公告)日：2008-07-30
申请号：KR1020070008578
申请日：2007-01-26
Applicant: 삼성전자주식회사
IPC: C23C16/00
CPC classification number: C23C16/4401 , C23C16/4481 , H01L21/02271 , Y10S261/65
Abstract: An apparatus for depositing a material film including an electromagnetic field generation part is provided to preclude sedimentation of deposit on an inner wall of transfer pipes and to flow a source, using electromagnetic field, by generating an electric field direction and a magnetic field direction. An apparatus(100) for depositing a material film comprises a first inert-gas injector(110a), a source tank(120a), a carburetor(140), a process chamber(170), a plurality of transfer pipes(180a,180b,180c,180d,180e,180f), and an electromagnetic field generation part(190). The electromagnetic field generation part is installed around the transfer pipes. The first inert-gas injector injects argon or hydrogen gas. The electromagnetic field generation part generates an electric field direction perpendicular to a progressive direction of the transfer pipes and a magnetic field direction perpendicular to the electric field direction. The electromagnetic field generation part includes a permanent magnet for generating the magnetic field.
Abstract translation: 提供了一种用于沉积包括电磁场产生部分的材料膜的装置，以防止沉积物在输送管的内壁上沉积，并且通过产生电场方向和磁场方向使用电磁场流动源。 一种用于沉积材料膜的设备（100）包括第一惰性气体注入器（110a），源罐（120a），化油器（140），处理室（170），多个输送管（180a，180b） ，180c，180d，180e，180f）和电磁场产生部（190）。 电磁场产生部分安装在输送管周围。 第一惰性气体喷射器注入氩气或氢气。 电磁场产生部分产生垂直于传送管的行进方向的电场方向和垂直于电场方向的磁场方向。 电磁场产生部分包括用于产生磁场的永磁体。
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公开(公告)号：KR1020080019334A
公开(公告)日：2008-03-04
申请号：KR1020060081475
申请日：2006-08-28
Applicant: 삼성전자주식회사
IPC: H01L21/04 , H01L21/20 , H01L27/108
CPC classification number: H01L21/0228 , H01L21/02205 , H01L21/324 , H01L28/40
Abstract: A method for forming a thin film and a method for manufacturing a capacitor using the same are provided to obtain an excellent dielectric layer by improving surface uniformity on a substrate. A lower electrode(102) is formed on a plurality of substrates(100) which are positioned within a chamber(10). A precursor layer is formed on the lower electrode by supplying precursor gas including hafnium and zirconium onto the substrates. A first purge process is performed to purge the inside of the chamber. A dielectric layer(120) including a zirconium oxide is formed on the lower electrode by oxidizing the precursor layer. A second purge process is performed to purge the inside of the chamber. An upper electrode(130) is formed on the dielectric layer.
Abstract translation: 提供一种形成薄膜的方法和使用其制造电容器的方法，以通过改善基板上的表面均匀性来获得优异的介电层。 在位于室（10）内的多个基板（100）上形成下电极（102）。 通过将含有铪和锆的前体气体供给到基板上，在下电极上形成前体层。 执行第一吹扫处理以吹扫室的内部。 通过氧化前体层，在下部电极上形成包含氧化锆的电介质层（120）。 执行第二吹扫处理以吹扫室的内部。 在电介质层上形成上电极（130）。
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公开(公告)号：KR100712502B1
公开(公告)日：2007-05-02
申请号：KR1020040099058
申请日：2004-11-30
Applicant: 삼성전자주식회사
IPC: H01L27/04
CPC classification number: H01L21/7687 , H01L27/10852 , H01L28/65 , H01L28/75
Abstract: 하부 전극을 형성하기 위한 습식 식각 공정시, 하부 전극의 하단에 위치하는 막들의 유실을 방지할 수 있는 MIM 캐패시터 및 그 제조방법을 개시한다. 개시된 본 발명의 MIM 캐패시터는, 제 1 도전막, 상기 제 1 도전막 상부에 형성되는 케미컬 베리어층 및 상기 케미컬 베리어층 상부에 형성되는 제 2 도전막으로 구성되는 하부 전극, 상기 하부 전극 표면에 형성되는 유전막, 및 상기 유전막 표면에 형성되는 상부 전극을 포함한다. 상기 케미컬 베리어층은 상기 제 1 및 제 2 도전막과 서로 다른 물질이며, 상기 제 1 및 제 2 도전막의 두께보다 얇은 두께를 갖는다.
케미컬 베리어층, 하부 전극, TiN, MIM-
公开(公告)号：KR100688499B1
公开(公告)日：2007-03-02
申请号：KR1020040067433
申请日：2004-08-26
Applicant: 삼성전자주식회사
IPC: H01L27/04
CPC classification number: H01L29/92 , H01L27/10852 , H01L28/40
Abstract: 유전막의 결정화로 인한 누설 전류를 방지할 수 있는 MIM 캐패시터 및 그 제조방법을 개시한다. 개시된 본 발명의 MIM 캐패시터는, 금속 물질로 된 하부 전극, 상기 하부 전극 상에 형성되는 유전막, 상기 유전막 상부에 형성되는 금속 물질로 된 상부 전극을 포함한다. 상기 유전막은 그 내부에 상기 유전막과 상이한 물질로 된 결정화 방지막을 포함한다.
결정화 방지막, ALD, 하프늄 산화막, 알루미늄 산화막, 티타늄 질화막, 누설 전류-
公开(公告)号：KR1020070004193A
公开(公告)日：2007-01-09
申请号：KR1020050059585
申请日：2005-07-04
Applicant: 삼성전자주식회사
IPC: H01L21/8242 , H01L27/108
Abstract: A film forming method and a capacitor forming method using the same are provided to sufficiently eliminate metal precursor chemically and physically absorbed on a substrate by repeatedly performing a purging and pumping process. A source gas containing a precursor is supplied onto a substrate(100) disposed in a process chamber(10) to form a precursor film(112) on the substrate. The process chamber is purged to remove the source gas from the process chamber. The process chamber is pumped out to eliminate the precursor physically absorbed on the precursor film. The purging and pumping process is repeated. Then, an oxidant is supplied onto the precursor film.
Abstract translation: 提供一种成膜方法和使用该成膜方法的电容器形成方法，以通过反复进行清洗和泵送过程来充分消除化学和物理上吸收在基板上的金属前体。 将含有前体的源气体供给到设置在处理室（10）中的基板（100）上，以在基板上形成前体膜（112）。 净化处理室以从处理室中除去源气体。 泵出处理室以除去物理吸收在前体膜上的前体。 清洗和泵送过程重复。 然后，将氧化剂供给到前体膜上。
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