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公开(公告)号：KR1020130010823A
公开(公告)日：2013-01-29
申请号：KR1020120018591
申请日：2012-02-23
Applicant: 한국전자통신연구원
IPC: H01L29/812 , H01L21/338
Abstract: PURPOSE: A nitride electronic device and a manufacturing method thereof are provided to implement an integrated circuit with various properties on a single substrate by using design technology and unit process with a structure of a different channel layer and a barrier layer. CONSTITUTION: A low temperature buffer layer(102) is formed on a sapphire substrate(101). A first semi-insulating GaN layer(103) is formed on the low temperature buffer layer. A first channel layer(104) for an electron transfer is formed on the first semi-insulating GaN layer. A first barrier layer(105) is formed on the first channel layer. A second semi-insulating GaN layer(107) is formed on the sidewall of the first barrier layer and the first channel layer. A second channel layer(108) and a second barrier layer(109) are formed on the second semi-insulating GaN layer.
Abstract translation: 目的：提供一种氮化物电子器件及其制造方法，通过使用具有不同沟道层和阻挡层的结构的设计技术和单元工艺，在单个衬底上实现具有各种性能的集成电路。 构成：在蓝宝石衬底（101）上形成低温缓冲层（102）。 在低温缓冲层上形成第一半绝缘GaN层（103）。 用于电子转移的第一沟道层（104）形成在第一半绝缘GaN层上。 第一阻挡层（105）形成在第一沟道层上。 在第一阻挡层和第一沟道层的侧壁上形成第二半绝缘GaN层（107）。 在第二半绝缘GaN层上形成第二沟道层（108）和第二势垒层（109）。
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公开(公告)号：KR100860068B1
公开(公告)日：2008-09-24
申请号：KR1020070043334
申请日：2007-05-04
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: 본 발명은 이종접합 바이폴라 트랜지스터 및 그 제조방법에 관한 것으로서, 본 발명에 의한 이종접합 바이폴라 트랜지스터 제조방법은 (a) 기판 상에 서브 컬렉터층, 컬렉터층, 베이스층, 에미터층 및 에미터캡층을 순차적으로 적층하는 단계; (b) 상기 에미터캡층 상부에 형상반전 리소그라피 방법을 이용하여 역경사를 갖는 감광막을 형성한 후 금속 증착 및 리프트 오프 공정에 의해 에미터 전극을 형성하는 단계; (c) 상기 에미터 전극의 양 측면에 제 1 유전체층을 형성하는 단계; (d) 상기 에미터 전극을 마스크로 하여 상기 에미터캡층 및 상기 에미터층 식각하여 상기 베이스층을 노출시키고 메사형태의 에미터를 형성하는 단계; (e) 상기 제 1 유전체층 및 상기 메사형태의 에미터의 측면에 제 2 유전체층을 형성하는 단계; (f) 상기 에미터 전극을 마스크로 하여 노출된 상기 베이스층의 상부에 상기 에미터 전극과 자기정렬되는 베이스전극을 형성하는 단계를 포함한다.
본 발명에 따르면, 에미터의 옆면에 추가적인 유전체를 사용하여 측벽을 형성함으로써 에미터와 베이스를 분리시키고, 종래의 기술에서 메사형태의 에미터 식각시 불가분하게 발생하는 과도한 하부 식각을 방지할 수 있을 뿐만 아니라 최소의 메사형태의 에미터와 베이스 전극의 간격을 정밀하게 제어할 수 있는 이점이 있다.
이종접합 바이폴라 트랜지스터, 자기정렬, 결정이방성, 메사식각, 에미터전극, 베 이스전극, 이방성식각, 측벽-
公开(公告)号：KR100832816B1
公开(公告)日：2008-05-28
申请号：KR1020070050022
申请日：2007-05-23
Applicant: 한국전자통신연구원
IPC: H01L29/70 , H01L29/737
CPC classification number: H01L29/66242 , H01L21/30604 , H01L29/42304
Abstract: A manufacturing method of a hetero junction bipolar transistor is provided to realize self array between emitter-base electrodes by forming a base electrode considering crystal anisotropy without performing an additional process or piling up a separated layer. An emitter cap layer, an emitter layer, a base layer, a primary collector layer(204) and a secondary collector layer(205) are formed on a substrate. An emitter electrode(301) is formed on the emitter cap layer. The base layer is exposed by etching the emitter cap layer and the emitter layer through the anisotropy etching using the emitter electrode as a mask. A base electrode(302) which is self-aligned to the emitter electrode is formed above the exposed base layer. The secondary collector layer is exposed by etching the collector layer and the base layer using the base electrode as the mask. A collector electrode(303) is formed on the secondary collector layer, and the secondary collector layer and the substrate are etched.
Abstract translation: 提供了异质结双极晶体管的制造方法，通过考虑晶体各向异性形成基极，而不进行附加工艺或堆叠分离层，实现发射极 - 基极之间的自阵列。 在基板上形成发射极盖层，发射极层，基极层，初级集电极层（204）和次级集电极层（205）。 发射极电极（301）形成在发射极盖层上。 通过使用发射电极作为掩模，通过各向异性蚀刻蚀刻发射极帽层和发射极层来暴露基底层。 在露出的基底层上形成与发射电极自对准的基极（302）。 通过使用基极作为掩模蚀刻集电体层和基极层来使第二集电体层露出。 集电极（303）形成在二次集电极层上，二次集电极层和基板被蚀刻。
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公开(公告)号：KR1020070061136A
公开(公告)日：2007-06-13
申请号：KR1020060050775
申请日：2006-06-07
Applicant: 한국전자통신연구원
CPC classification number: H01L29/7371 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/66318 , H01L29/7378
Abstract: A hetero-junction bipolar transistor and a method for manufacturing the same are provided to remove an increase of base-collector capacitance by isolating a base pad region from a device region including a base electrode. A hetero-junction bipolar transistor includes a substrate, a collector layer(120), a base layer(130), an emitter layer, a collector electrode(210), a base electrode(180), and an emitter electrode(160). A device region is formed on one side of the substrate and includes a sub-collector layer(110), the collector layer, the base layer, the emitter layer, an emitter cap layer(150), the emitter electrode, and the base electrode. A pad region is formed on the other side of the substrate and includes the sub-collector layer, the collector layer, the base layer, and a base pad. A connective line(200) is used for connecting the base electrode of the device region with the base pad of the pad region in a bridge structure.
Abstract translation: 提供了一种异质结双极晶体管及其制造方法，以通过从包括基极的器件区域隔离基极区域来消除基极集电极电容的增加。 异质结双极晶体管包括基板，集电极层（120），基极层（130），发射极层，集电极（210），基极（180）和发射极（160）。 器件区域形成在衬底的一侧上，并且包括副集电极层（110），集电极层，基极层，发射极层，发射极帽层（150），发射极电极和基极 。 衬底区域形成在衬底的另一侧，并且包括副集电极层，集电极层，基极层和基座。 连接线（200）用于将装置区域的基极与衬垫区域的基座焊接在桥结构中。
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公开(公告)号：KR100518451B1
公开(公告)日：2005-09-30
申请号：KR1020030085822
申请日：2003-11-28
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: 절연막 리프트-오프(lift-off)를 활용한 이종접합 쌍극자 트랜지스터(Heterojunction Bipolar Transistor : HBT) 마이크로웨이브 단일기판 집적회로(Monolithic Microwave Integrated Circuit : MMIC) 제작방법을 제시한다. 본 발명에서는 HBT MMIC의 제작에서 필수적인 비아(via)를 형성하기 위하여 형상반전패턴인 포토레지스트 패턴을 형성한 후, 양질의 절연막을 저온에서 증착한다. 그런 다음, 포토레지스트 패턴과 절연막을 동시에 리프트-오프하여 비아를 개방한다. 이렇게 함으로써, 고온의 절연막 증착 공정과 절연막 식각 공정으로 비아를 형성하던 종래에 비하여 전류이득 감소를 최소화할 수 있다.
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Patent Agency Ranking
公开(公告)号：KR1020040017698A
公开(公告)日：2004-02-27
申请号：KR1020020050124
申请日：2002-08-23
Applicant: 한국전자통신연구원
IPC: C25D7/12
Abstract: PURPOSE: An electroplating device is provided which further improves uniformity of plating thickness by changing a member for resting an object to be plated into an electrode ring and constructing the electrode ring in an inclined shape so that bubbles generated from the surface of wafer that is the object to be plated are easily removed. CONSTITUTION: The electroplating device comprises a plating pot(100) which forms an external appearance, and in which a plating solution is contained; a metal box(110) positioned inside the plating pot and formed of the same metal as plating metal; an inclined electrode ring(120) which is positioned oppositely to the metal box in the plating pot, and on which an object to be plated is rested; a metal box fixing frame(140) for fixing the metal box; an electrode ring fixing frame(130) for fixing the inclined electrode ring; and power supply terminals(150,160) connected to the metal box and inclined electrode ring, wherein a wafer holder(170) is attached to the inclined electrode ring so that a wafer i.e., the object to be plated is rested on the wafer holder, wherein a chemical resistant material such as Teflon and polyethylene is coated on the surface of the metal box fixing frame and electrode ring fixing frame, and wherein the power supply terminals are connected to the metal box and inclined electrode ring through an inner part of the metal box fixing frame and electrode ring fixing frame.
Abstract translation: 目的：提供一种电镀装置，其通过改变用于将要镀覆的物体放置在电极环中并将该电极环形成为倾斜形状的构件，从而进一步提高电镀厚度的均匀性，使得从晶片的表面产生的气泡为 被镀物体很容易去除。 构成：电镀装置包括形成外观的电镀罐（100），其中包含电镀液; 金属盒（110），其位于所述电镀槽内并由与所述电镀金属相同的金属形成; 倾斜电极环（120），与电镀锅中的金属盒相对地定位，待镀物体放置在该倾斜电极环上; 金属盒固定框架（140），用于固定金属盒; 用于固定所述倾斜电极环的电极环固定框架（130）; 以及连接到金属盒和倾斜电极环的电源端子（150,160），其中晶片保持器（170）附接到倾斜电极环，使得晶片（即被电镀物体）搁置在晶片保持器上，其中 在金属盒固定框架和电极环固定框架的表面上涂覆了特氟龙和聚乙烯等耐化学性材料，其中电源端子通过金属盒的内部连接到金属盒和倾斜电极环 固定框架和电极环固定架。
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公开(公告)号：KR100419576B1
公开(公告)日：2004-02-19
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供一种具有阴极电极的电镀装置，通过改善阴极电极和电镀杯的结构，从而实现电镀的高均匀性和高效率，由此解决不均匀的电镀问题并抑制电镀速度的恶化。 本发明的目的在于提供一种电镀装置，该电镀装置包括用于通过流动式电镀对晶片进行电镀的电镀杯（20），用于密封电镀杯的头部和用于将正电源施加到晶片（22）的阳极电极板， 设备包括一个阴极板（21），该阴极板包括一个环（21e），该环被接收在电镀杯中并与电镀杯的底表面间隔开一定的距离，并且晶片与 其中，所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧以使与所述晶片接触的所述电镀液循环至外部，所述电镀液的直径 所述电镀杯大于所述晶片的电镀杯，并且所述阴极电极板包括圆柱形部分（21a）; 凸缘部（21b），其从所述筒部的上表面向外侧延伸; 底部（21c），其从所述筒部的下表面向内侧延伸; 以及从所述筒部的所述底部向所述筒部的上表面方向延伸的突出部，所述突出部与所述筒部的所述内周面隔开一定距离，所述环（21e）为 在突出部分上膨胀并形成。
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公开(公告)号：KR100417126B1
公开(公告)日：2004-02-05
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: 본 발명은 플립 칩(Flip chip) 방식의 반도체 소자의 접속단자인 범프를 형성하는 방법에 관한 것으로, 입출력패드가 형성된 반도체칩 상에 보호막을 형성하는 단계, 상기 보호막을 선택적으로 식각하여 상기 입출력패드의 표면을 노출시키는 단계, 상기 노출된 입출력패드를 포함한 상기 보호막 상에 금속기저층을 형성하는 단계, 상기 금속기저층 상에 도금법을 이용하여 도금층을 형성하는 단계, 상기 도금층 상에 감광막을 도포하고 선택적으로 패터닝하여 감광막패턴을 형성하는 단계, 상기 감광막패턴을 식각 마스크로 이용하여 상기 도금층과 금속기저층을 순차적으로 식각하는 단계, 및 상기 도금층에 열을 가하여 상기 금속기저층 상에 상기 도금층으로 된 범프를 형성하는 단계를 포함한다.
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR1020020093297A
公开(公告)日：2002-12-16
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供具有阴极电极的电镀装置，通过改善阴极和电镀杯的结构来实现电镀的高均匀性和效率，从而解决不均匀电镀问题并抑制电镀速度的劣化。 构成：在电镀设备中，包括用于通过流动电镀电镀晶片的电镀杯（20），用于密封电镀杯的头和用于将正电源施加到晶片（22）的阳极电极板，电镀 装置包括阴极电极板（21），其包括环（21e），所述环（21e）被接收在电镀杯中，与电镀杯的底表面间隔开一定距离，并且晶片在 低于电镀杯的上表面，其中所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧，以将与所述晶片接触的电镀溶液循环到外部， 电镀杯大于晶片的电镀杯，阴极电极板包括圆筒部分（21a）; 凸缘部（21b），其从所述气缸部的上表面延伸到外侧; 底部（21c），其从所述气缸部的下表面延伸到所述内侧; 以及突出部（21d），其从所述圆筒部的底部延伸到上表面方向，其中所述突出部与所述圆筒部的内周面间隔开一定距离，其中，所述环（21e）为 在突起部分上膨胀并形成。
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公开(公告)号：KR1020020092041A
公开(公告)日：2002-12-11
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: PURPOSE: A bump formation method is provided to easily achieve a high density and a high aspect ration and to simplify manufacturing processes by minimizing a stress due to a thermal expansive coefficient between a chip and a substrate. CONSTITUTION: A protection layer(23) is formed on a semiconductor substrate(21) having an input and an output pad(22). An UBM(Under Ball Metallurgy)(24) and a plating film are sequentially formed on the protection layer(23). The plating layer and the UBM(24) are sequentially patterned by wet-etching or dry-etching of spray method using a photoresist pattern as a mask. After coating a resin flux on the plating layer, the resin flux reflows in nitrogen atmosphere, thereby forming a bump(25a).
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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