公开(公告)号：US20230187473A1

公开(公告)日：2023-06-15

申请号：US18105045

申请日：2023-02-02

Applicant: Epistar Corporation

Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L27/156 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L33/382 ,  H01L33/385 ,  H01L2924/0002

Abstract: A light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and the second light-emitting structure unit includes a second sidewall; an isolation layer formed on the first sidewall and the second sidewall, including a first edge on the first light-emitting structure unit and wherein the first edge has an acute angle in a cross-sectional view; and an electrical connection formed on the isolation layer, the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall and the second sidewall are inclined; and wherein the electrical connection includes a first part on the first light-emitting structure unit, and the first part does not overlap the first edge of the isolation layer.

公开(公告)号：US20230135799A1

公开(公告)日：2023-05-04

申请号：US18091035

申请日：2022-12-29

Applicant: EPISTAR CORPORATION

Inventor： Aurelien GAUTHIER-BRUN ,  Chao-Hsing CHEN ,  Chang-Tai HSAIO ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  Jia-Kuen WANG ,  Yung-Hsiang LIN

IPC: H01L33/38 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/44 ,  H01L33/18

Abstract: A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.

公开(公告)号：US20210343906A1

公开(公告)日：2021-11-04

申请号：US17306136

申请日：2021-05-03

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC: H01L33/46 ,  H01L33/60 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US20210313388A1

公开(公告)日：2021-10-07

申请号：US17348080

申请日：2021-06-15

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/38

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US20210210659A1

公开(公告)日：2021-07-08

申请号：US17206647

申请日：2021-03-19

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG ,  Bo-Jiun HU ,  Tsung-Hsun CHIANG ,  Wen-Hung CHUANG ,  Kuan-Yi LEE ,  Yu-Ling LIN ,  Chien-Fu SHEN ,  Tsun-Kai KO

IPC: H01L33/46 ,  H01L33/38

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

公开(公告)号：US20210202571A1

公开(公告)日：2021-07-01

申请号：US17138335

申请日：2020-12-30

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Chi-Shiang HSU ,  Yong-Yang CHEN

IPC: H01L27/15

Abstract: A light-emitting device comprises a substrate comprising a top surface; a plurality of light-emitting units formed on the top surface of the substrate comprising a first light-emitting unit, a second light-emitting unit, and one or a plurality of third light-emitting units, wherein each of the plurality of light-emitting units comprises a first semiconductor layer, an active layer and a second semiconductor layer; an insulating layer comprising a first insulating layer opening and a second insulating layer opening formed on each of the plurality of light-emitting units; a first extension electrode covering the first light-emitting unit, wherein the first extension electrode covers the first insulating layer opening on the first light-emitting unit without covering the second insulating layer opening on the first light-emitting unit; a second extension electrode covering the second light-emitting unit, wherein the second extension electrode covers the second insulating layer opening on the second light-emitting unit without covering the first insulating layer opening on the second light-emitting unit; a first electrode pad covering a part of the plurality of the light-emitting units; and a second electrode pad covering another part of the plurality of light-emitting units.

公开(公告)号：US20210183942A1

公开(公告)日：2021-06-17

申请号：US17170407

申请日：2021-02-08

Applicant: EPISTAR CORPORATION

Inventor： Chien-Fu SHEN ,  Chao-Hsing CHEN ,  Tsun-Kai KO ,  Schang-Jing HON ,  Sheng-Jie HSU ,  De-Shan KUO ,  Hsin-Ying WANG ,  Chiu-Lin YAO ,  Chien-Fu HUANG ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L27/15 ,  H01L25/075 ,  H01L33/20 ,  H01L33/62 ,  H01L33/38 ,  H01L33/44

Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

公开(公告)号：US20190237624A1

公开(公告)日：2019-08-01

申请号：US16382873

申请日：2019-04-12

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yu-Chen YANG ,  Li-Ping JOU ,  Hui-Chun YEH ,  Yi-Wen KU

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/46 ,  H01L33/62 ,  H01L33/30 ,  H01L33/08 ,  H01L33/20

CPC classification number: H01L33/38 ,  H01L33/0012 ,  H01L33/08 ,  H01L33/20 ,  H01L33/30 ,  H01L33/382 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second semiconductor layer having a second electrical conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a plurality of beveled trenches formed in the semiconductor layer sequence; a plurality of protruding structures respectively formed in the plurality of beveled trenches; a dielectric layer formed on the second semiconductor layer and an inner sidewall of the plurality of beveled trenches; a reflecting layer interposed between the semiconductor layer sequence and the dielectric layer; and a metal layer formed along the inner sidewall of the plurality of beveled trenches, wherein the dielectric layer, the reflecting layer and the metal layer are overlapping, the plurality of protruding structures and the reflecting layer are not overlapping.

公开(公告)号：US20180287031A1

公开(公告)日：2018-10-04

申请号：US16001676

申请日：2018-06-06

Applicant: EPISTAR CORPORATION

Inventor： Shih-I CHEN ,  Chia-Liang HSU ,  Tzu-Chieh HSU ,  Han-Min WU ,  Ye-Ming HSU ,  Chien-Fu HUANG ,  Chao-Hsing CHEN ,  Chiu-Lin YAO ,  Hsin-Mao LIU ,  Chien-Kai CHUNG

IPC: H01L33/62 ,  H01L33/60 ,  H01L27/15 ,  H01L33/08 ,  H01L33/10 ,  H01L25/075 ,  H01L33/48 ,  H01L33/46 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38 ,  H01L33/14 ,  H01L33/40 ,  H01L33/32

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

公开(公告)号：US20180212125A1

公开(公告)日：2018-07-26

申请号：US15880067

申请日：2018-01-25

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao Tseng ,  Wen-Hung Chuang ,  Cheng-Lin LU

IPC: H01L33/62 ,  H01L33/46

CPC classification number: H01L33/405 ,  F21K9/23 ,  F21K9/232 ,  F21K9/69 ,  F21Y2115/10 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a surrounding part surrounding the semiconductor structure and exposing a surface of the first semiconductor layer; a first insulating structure formed on the semiconductor structure, including a plurality of protrusions covering the surface of the first semiconductor layer and a plurality of recesses exposing the surface of the first semiconductor layer; a first contact portion formed on the surrounding part and contacting the surface of the first semiconductor layer by the plurality of recesses; a first pad formed on the semiconductor structure; and a second pad formed on the semiconductor structure.