公开(公告)号：JP6177390B2

公开(公告)日：2017-08-09

申请号：JP2016122395

申请日：2016-06-21

Applicant: ニヴァロックス−ファー ソシエテ アノニム

Inventor： アレクス・ガンデルマン ,  アンドレ・パン

IPC: B81C1/00 ,  G04B13/02 ,  G04B19/06 ,  G04B37/22 ,  G04B15/14

CPC classification number: B81C1/00619 ,  B81C1/00103 ,  G04B13/02 ,  G04B13/026 ,  G04B13/027 ,  G04D99/00 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  B81C2201/0188 ,  B81C2201/0198

公开(公告)号：JP2012114310A

公开(公告)日：2012-06-14

申请号：JP2010263135

申请日：2010-11-26

Applicant: Tanaka Kikinzoku Kogyo Kk ,  田中貴金属工業株式会社

Inventor： KOGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC: H01L21/60

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2201/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: PROBLEM TO BE SOLVED: To provide a transfer substrate for forming metal wiring on a transferred object by transfer method in which the heating temperature can be lowered on the transferred object side, and to provide a method of forming metal wiring.SOLUTION: The transfer substrate comprises: a substrate; at least one metal wiring material formed on the substrate; and an underlying metal film formed between the substrate and the metal wiring material, and transfers the metal wiring material to a transferred object. The metal wiring material is a molding produced by sintering gold powder, or the like, having a purity of 99.9 wt% or higher, and an average particle diameter of 0.01-1.0 μm, and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate can transfer the metal wiring material to the transferred object even if the heating temperature of the transferred object is 80-300°C.

Abstract translation: 要解决的问题：提供一种用于通过转印方法在转印对象上形成金属布线的转印基板，其中转印物体侧可以降低加热温度，并提供形成金属布线的方法。 转移基板包括：基板; 形成在所述基板上的至少一个金属布线材料; 以及形成在基板和金属布线材料之间的底层金属膜，并将金属布线材料转印到转印对象物上。 金属配线材料是通过烧结纯度为99.9重量％以上，平均粒径为0.01〜1.0微米的金粉等而制成的成型体，下面的金属膜由金属等构成 金或合金。 即使转印对象的加热温度为80〜300℃，转印基板也可以将金属配线材料转印到转印体上。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP4859996B1

公开(公告)日：2012-01-25

申请号：JP2010263135

申请日：2010-11-26

Applicant: 田中貴金属工業株式会社

Inventor： 幸男 兼平 ,  俊典 小柏 ,  昌昭 栗田 ,  尚 西森

IPC: H01L21/60

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2201/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.

公开(公告)号：US11993011B1

公开(公告)日：2024-05-28

申请号：US17152942

申请日：2021-01-20

Applicant: National Technology & Engineering Solutions of Sandia, LLC

Inventor： Eric Langlois ,  Judith Maria Lavin

IPC: B29C64/209 ,  B33Y30/00 ,  B33Y80/00 ,  B81C1/00 ,  H01J37/04

CPC classification number: B29C64/209 ,  B81C1/00373 ,  H01J37/04 ,  B33Y30/00 ,  B33Y80/00 ,  B81C2201/0188 ,  H01J2237/31732

Abstract: Plasma micro nozzle adapters having various configurations and operating principles are disclosed. The plasma micro nozzle adapter is employed with a commercial plasma jet printer to produce smaller printed features than those possible with the original plasma jet printer. In a first class of embodiments, the plasma micro nozzle adapter narrows a plasma jet using electrostatic or magnetostatic lensing, permitting the printing of ceramic, metallic, dielectric, or plastic features with line widths of 10 μm or less. In a second class of embodiments, the plasma micro nozzle adapter narrows the plasma jet using a gas sheath. By adjusting the flow rate or pressure of the gas used to form the gas sheath, the cross-sectional shape of the plasma jet may form, for example, an ellipse, thereby controlling the width of the printed feature. A third class of embodiments employs both electrostatic (or magnetostatic) lensing along with the gas sheath.

公开(公告)号：US20230219804A1

公开(公告)日：2023-07-13

申请号：US18153795

申请日：2023-01-12

Applicant: KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS ,  King Abdullah University of Science and Technology

Inventor： Xuecui ZOU ,  Sally AHMED ,  Hossein FARIBORZI ,  Nizar JABER

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81C1/00158 ,  B81B2201/0278 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2207/017 ,  B81C2201/0156 ,  B81C2201/0188

Abstract: A MEMS temperature sensor including a clamped-clamped microbeam having a drive electrode on one side configured for applying an AC current, and a sense electrode diagonally situated on the other side, a first anchor at one end and a second anchor at the other end of the microbeam. The first anchor receive a DC bias currents, which heats the microbeam to an operating temperature. The sense electrode is configured to capacitively sense oscillations in the microbeam due to an applied AC current. The MEMS temperature sensor has a three wafer construction in which the components are formed. The device is encapsulated by aluminum, and metal wires connect the first and second anchor, the drive electrode and the sense electrode to side electrode pads outside of the encapsulation. The MEMS temperature sensor has a linear operating region of 30-60 degrees Celsius.

公开(公告)号：US09890036B2

公开(公告)日：2018-02-13

申请号：US15429636

申请日：2017-02-10

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： John Charles Ehmke ,  Virgil Cotoco Ararao

IPC: H01L21/00 ,  H01L21/31 ,  H01L21/469 ,  B81B7/00 ,  B81C1/00 ,  G02B26/08 ,  G02B6/42 ,  G02B26/00 ,  B82Y30/00

CPC classification number: B81B7/0038 ,  B81B2203/0315 ,  B81C1/00269 ,  B81C1/00285 ,  B81C1/00293 ,  B81C2201/0108 ,  B81C2201/013 ,  B81C2201/0188 ,  B81C2201/0198 ,  B81C2201/053 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/035 ,  B82Y30/00 ,  G02B6/4204 ,  G02B6/4208 ,  G02B6/4248 ,  G02B26/001 ,  G02B26/0833 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/03612 ,  H01L2224/03614 ,  H01L2224/039 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05109 ,  H01L2224/05123 ,  H01L2224/05138 ,  H01L2224/05163 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05562 ,  H01L2224/27462 ,  H01L2224/2747 ,  H01L2224/279 ,  H01L2224/29006 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29109 ,  H01L2224/29144 ,  H01L2224/32058 ,  H01L2224/32227 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01074 ,  H01L2924/1461 ,  H01L2924/164 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/03 ,  H01L2924/01042 ,  H01L2924/01072 ,  H01L2924/01004 ,  H01L2224/83 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03462

Abstract: In described examples, a hermetic package of a microelectromechanical system (MEMS) structure includes a substrate having a surface with a MEMS structure of a first height. The substrate is hermetically sealed to a cap forming a cavity over the MEMS structure. The cap is attached to the substrate surface by a vertical stack of metal layers adhering to the substrate surface and to the cap. The stack has a continuous outline surrounding the MEMS structure while spaced from the MEMS structure by a distance. The stack has: a first bottom metal seed film adhering to the substrate and a second bottom metal seed film adhering to the first bottom metal seed film; and a first top metal seed film adhering to the cap and a second top metal seed film adhering to the first top metal seed film.

公开(公告)号：US09822443B1

公开(公告)日：2017-11-21

申请号：US15010653

申请日：2016-01-29

Applicant: Multibeam Corporation

Inventor： Michael C. Smayling ,  Kevin M. Monahan ,  David K. Lam ,  Theodore A. Prescop

IPC: H01J37/30 ,  C23C14/48

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.

公开(公告)号：US09731964B2

公开(公告)日：2017-08-15

申请号：US15171002

申请日：2016-06-02

Applicant: Nivarox-FAR S.A.

Inventor： Alex Gandelhman ,  Andre Pin

IPC: B81C1/00 ,  G04D99/00 ,  G04B13/02

CPC classification number: B81C1/00619 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  B81C2201/0188 ,  B81C2201/0198 ,  G04B13/02 ,  G04B13/026 ,  G04B13/027 ,  G04D99/00

Abstract: The invention relates to a silicon-based component with at least one reduced contact surface which, formed from a method combining at least one oblique side wall etching step with a “Bosch” etch of vertical side walls, improves, in particular, the tribology of components formed by micromachining a silicon-based wafer.

公开(公告)号：US20160181040A1

公开(公告)日：2016-06-23

申请号：US14977483

申请日：2015-12-21

Applicant: DELFMEMS SAS

Inventor： Renaud Robin ,  Nicolas Lorphelin ,  Karim Segueni

IPC: H01H59/00 ,  B81B3/00 ,  H01H49/00 ,  B81C1/00

CPC classification number: H01H59/0009 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/0188 ,  H01H49/00 ,  H01H2059/0027 ,  H01H2059/0036 ,  H01H2227/004

Abstract: Systems and methods for a MEMS device, in particular, a MEMS switch, and the manufacture thereof are provided. In one example, said MEMS device comprises posts and a conduction (transmission) line formed over a substrate and a membrane over the posts and the conduction line. The membrane comprises a first membrane layer and a second membrane layer formed over the first membrane layer in a region over one of the posts and/or a region over the conduction line such that the first membrane layer has a region where the second membrane layer is not formed adjacent to the region where the second membrane layer is formed.

Abstract translation: 提供了用于MEMS器件，特别是MEMS开关的系统和方法及其制造。 在一个示例中，所述MEMS器件包括柱和在衬底上形成的导电（透射）线，并且在柱和导电线上形成膜。 所述膜包括第一膜层和第二膜层，所述第一膜层和所述第二膜层形成在所述第一膜上方的所述柱中的一个区域上和/或所述导电线上的区域中，使得所述第一膜层具有第二膜层 不与形成有第二膜层的区域相邻地形成。

公开(公告)号：US09193584B2

公开(公告)日：2015-11-24

申请号：US14608817

申请日：2015-01-29

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： William J. Gallagher ,  Eugene J. O'Sullivan ,  Naigang Wang

IPC: H01L21/00 ,  B81C1/00 ,  H01L43/14 ,  B81B3/00 ,  H01L43/10 ,  H01L43/12 ,  H01L49/02 ,  H01F41/04

CPC classification number: B81C1/00373 ,  B81B3/0021 ,  B81B2201/038 ,  B81B2203/0118 ,  B81C1/00142 ,  B81C1/00706 ,  B81C2201/0188 ,  H01F41/046 ,  H01L28/10 ,  H01L43/10 ,  H01L43/12 ,  H01L43/14

Abstract: A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space.