公开(公告)号：JP2001230505A

公开(公告)日：2001-08-24

申请号：JP2000379303

申请日：2000-12-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRCHHOFF MARKUS ,  ROGALLI MICHAEL ,  WEGE STEPHAN

IPC: H05K1/03 ,  H01L21/283 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To provide an electric wiring of an integrated circuit. SOLUTION: The electric wiring of the integrated circuit is provided with a substrate (1), conducting layer (2) which is arranged on the substrate (1) and structured to have a first conductor path (3), second conductor path (4) and a trench (5) between the first conductor path (3) and the second conductor path (4), and first dielectric layer (6) which is arranged on the conducting layer (2) and with which the trench (5) is at least partially filled. In this case, the first dielectric layer (6) contains one from among polybenzo-oxazole and/or polynorbornene and/or their derivatives, as the polymeric material.

公开(公告)号：DE102017113515B4

公开(公告)日：2019-01-24

申请号：DE102017113515

申请日：2017-06-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  LEHNERT WOLFGANG ,  MATOY KURT ,  SCHNEEGANS MANFRED ,  NAPETSCHNIG EVELYN ,  WEIDGANS BERNHARD ,  GATTERBAUER JOHANN

IPC: C23C16/455 ,  C23C16/40

Abstract: Ein Verfahren zum Bilden einer Aluminiumoxidschicht ist bereitgestellt, wobei das Verfahren Folgendes beinhaltet: Bereitstellen einer Metalloberfläche, die wenigstens ein Metall aus einer Gruppe von Metallen beinhaltet, wobei die Gruppe Kupfer, Aluminium, Palladium, Nickel, Silber und Legierungen von diesen beinhaltet, und Abscheiden einer Aluminiumoxidschicht auf der Metalloberfläche durch Atomlagenabscheidung, wobei eine maximale Verarbeitungstemperatur während der Abscheidung 280°C beträgt, so dass die Aluminiumoxidschicht mit einer Oberfläche gebildet wird, die einen Flüssiglotkontaktwinkel von weniger als 40° aufweist.

公开(公告)号：DE102014119360B4

公开(公告)日：2017-02-02

申请号：DE102014119360

申请日：2014-12-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LEHNERT WOLFGANG ,  ROGALLI MICHAEL

IPC: H01L21/768 ,  H01L21/60

Abstract: Verfahren (100) zur Verarbeitung einer Halbleitervorrichtung, das Folgendes aufweist: das Ausbilden einer abschließenden Metallschicht (403); das Ausbilden einer ALD-Passivierungsschicht (404) über der abschließenden Metallschicht (403); und das gemeinsame Strukturieren der ALD-Passivierungsschicht (404) und der abschließenden Metallschicht (403) zur Ausbildung einer strukturierten Metallschicht (403) und einer strukturierten ALD-Passivierungsschicht (404), wobei die strukturierte Metallschicht (403) einen Anschlussflächenbereich (406) aufweist, der von der strukturierten ALD-Passivierungsschicht (404) bedeckt ist, wobei die ALD-Passivierungsschicht (404) durch ein Atomlagenabscheidungsverfahren über der abschließenden Metallschicht (403) ausgebildet wird.

公开(公告)号：DE10224217A1

公开(公告)日：2003-12-18

申请号：DE10224217

申请日：2002-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  VOELKEL LARS

IPC: G03C1/492 ,  G03C1/494 ,  G03C1/76 ,  G03F7/039 ,  H01L21/31 ,  H01L21/469 ,  G03F7/038

Abstract: A photosensitive resist ( 100 ) for coating on a semiconductor substrate or a mask comprises a photo acid generator (D), a solvent (E) and at least two different base polymers, of which a first base polymer comprises cycloaliphatic parent structures (A) which substantially absorb incident light at 248 nm and are substantially transparent to incident light at 193 nm, and a second base polymer comprises aromatic parent structures (B) which substantially absorb incident light at 193 nm and are substantially transparent to incident light at 248 nm. If such a resist ( 100 ) is applied in a coat thickness of from 50 to 400 nm to a substrate and the proportion of the second base polymer having the aromatic parent structure is between 1 and 25 mol %, a relatively high structure contrast, better stability to etching and a reduction of defects are advantageously achieved in an exposure at a wavelength of 193 nm. Exposure over the entire depth range of the resist ( 100 ) is ensured thereby.

公开(公告)号：DE10121556A1

公开(公告)日：2002-11-14

申请号：DE10121556

申请日：2001-05-03

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHNEEGANS MANFRED ,  ROGALLI MICHAEL

IPC: C09J7/02 ,  B24B7/22 ,  B24B41/06 ,  C09J11/06 ,  C09J133/00 ,  C09J163/00 ,  C09J167/00 ,  C09J171/00 ,  C09J175/04 ,  H01L20060101 ,  H01L21/00 ,  H01L21/30 ,  H01L21/302 ,  H01L21/304 ,  H01L21/461 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78

Abstract: The invention relates to a method for grinding the back sides of wafers using foils having a carrier layer known per se and a gradually polymerizable adhesive layer. The invention also relates to foils having said gradually polymerizable adhesive layer and to their utilization.

公开(公告)号：DE50211139D1

公开(公告)日：2007-12-13

申请号：DE50211139

申请日：2002-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  SCHNEEGANS MANFRED

IPC: C09J7/02 ,  H01L21/302 ,  B24B7/22 ,  B24B41/06 ,  C09J11/06 ,  C09J133/00 ,  C09J163/00 ,  C09J167/00 ,  C09J171/00 ,  C09J175/04 ,  H01L20060101 ,  H01L21/00 ,  H01L21/30 ,  H01L21/304 ,  H01L21/461 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78

Abstract: The present invention relates to a process for the back-surface grinding of wafers using films which have a support layer, which is known per se, and an adhesion layer which can be polymerized in steps, and to films which include such an adhesion layer which can be polymerized in steps, and to the use thereof.

公开(公告)号：DE102006001429A1

公开(公告)日：2007-03-22

申请号：DE102006001429

申请日：2006-01-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BEER GOTTFRIED ,  BRUNNBAUER MARKUS ,  ROGALLI MICHAEL

IPC: H01L23/50 ,  H01L21/50 ,  H01L23/28 ,  H01L23/498

Abstract: A functional unit comprises rows and columns of semiconductor chips (3) on a connection plate with at least one chip at each position having an active upper side (8) and rear (10) and edge (12,14) sides. The active side and connection plate are coplanar and the rear and edge sides are embedded in a housing of plastic mass (4). A single or multi-layer wiring structure of conductive leads (17,18) on the plate has dielectric layers (16) to mutually insulate the leads and the dielectric comprises and organic/inorganic hybrid polymer. An independent claim is also included for the following: (A) a semiconductor component as above; and (B) a production process for the above.

公开(公告)号：DE50203431D1

公开(公告)日：2005-07-21

申请号：DE50203431

申请日：2002-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL ,  REB ALEXANDER ,  VOELKEL LARS ,  STEGEMANN MAIK

IPC: G03F7/40 ,  H01L21/311 ,  H01L21/3213

Abstract: The invention relates to a process for the production of a semiconductor apparatus, in which an etch step is carried out after an exposure step using light having a wavelength of 193 nm and a development step, the etch gas used containing an added reactive monomer. As a result, polymerization of the surface and hence sidewall passivation of the photoresist used are achieved.

公开(公告)号：DE59510967D1

公开(公告)日：2004-12-23

申请号：DE59510967

申请日：1995-03-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KIRSCHBAUER JOSEF ,  HOPF ERICH ,  GROENNINGER GUENTHER ,  FISCHER JUERGEN ,  DIDSCHIES GUENTER ,  MUNDIGL JOSEF ,  ROGALLI MICHAEL

IPC: G06K19/077

Abstract: This invention relates to chip-card comprising of plastic card in which semiconductor chip is placed. The chip card formed by plastic card in which semiconductor chip surrounded with plastic body is placed. The semiconductor chip is electrically connected to contact tabs connected to plastic card. The contact tabs are connected to the plastic card by means of glue substance with at least three layers. The middle layer of the glue substance is formed of flexible material. The contact tabs near the plastic body and outside it have flexible region.

公开(公告)号：DE102007030034A1

公开(公告)日：2008-01-10

申请号：DE102007030034

申请日：2007-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROGALLI MICHAEL

IPC: G01L9/06 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08

Abstract: A sensor device with a semiconductor substrate with at least one deformable region with a sensing element thereon that generates an output signal related to a force applied to the deformable region is shown. A wiring formed over the deformable region and deformable therewith has a deformation characteristic selected to reduce an output error characteristic of the sensor output signal. A method for manufacturing the sensor device is disclosed.