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公开(公告)号：CN101499450A
公开(公告)日：2009-08-05
申请号：CN200910005255.6
申请日：2009-01-20
Applicant: 株式会社瑞萨科技
IPC: H01L23/488 , H01L23/495 , H01L21/50 , H01L21/60
CPC classification number: H01L24/83 , H01L23/49513 , H01L23/49524 , H01L23/49562 , H01L23/49582 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/743 , H01L24/84 , H01L2224/04026 , H01L2224/274 , H01L2224/29101 , H01L2224/2919 , H01L2224/29339 , H01L2224/32245 , H01L2224/32506 , H01L2224/37124 , H01L2224/37147 , H01L2224/40091 , H01L2224/40245 , H01L2224/40247 , H01L2224/45014 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/49111 , H01L2224/49175 , H01L2224/73219 , H01L2224/73221 , H01L2224/73265 , H01L2224/743 , H01L2224/83194 , H01L2224/83439 , H01L2224/83801 , H01L2224/83805 , H01L2224/8384 , H01L2224/8385 , H01L2224/83855 , H01L2224/85205 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30105 , H01L2924/00014 , H01L2924/00 , H01L2924/01026 , H01L2924/3512 , H01L2924/00015 , H01L2224/83205 , H01L2924/00012
Abstract: 本发明使得介在于半导体芯片和芯片垫部之间的导电性接着剂的接合可靠性提高。硅芯片3A搭载在与漏极引线Ld一体形成的芯片垫部4D上，且在硅芯片3A的主面上形成有源极垫7。硅芯片3A的背面构成一功率MOSFET的漏极，且经由Ag膏5而接合于芯片垫部4D上。源极引线Ls与源极垫7是通过Al带10而电性连接。在硅芯片3A的背面上形成有Ag纳米粒子涂膜9A，在芯片垫部4D与引线(漏极引线Ld、源极引线Ls)的表面上形成有Ag纳米粒子涂膜9B。
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公开(公告)号：CN101295687A
公开(公告)日：2008-10-29
申请号：CN200810093595.4
申请日：2008-04-25
Applicant: 株式会社瑞萨科技
IPC: H01L23/48 , H01L23/485 , H01L23/495 , H01L23/31
Abstract: 本发明公开了一种半导体器件。本发明的目的是实现其中密封功率MOSFET的小表面安装封装的导通电阻的减小。硅芯片安装在与构成漏极引线的引线集成的芯片焊盘部上。硅芯片的主表面上具有源极焊盘和栅极焊盘。硅芯片的背面构成功率MOSFET的漏极，并经由Ag浆料键合至芯片焊盘部的顶表面。构成源极引线的引线经由Al带电耦合至源极焊盘，而构成栅极引线的引线经由Au线电耦合至栅极焊盘。
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公开(公告)号：CN100481428C
公开(公告)日：2009-04-22
申请号：CN200610005710.9
申请日：2006-01-06
Applicant: 株式会社瑞萨科技
IPC: H01L23/488 , H01L21/60 , H01L21/52 , B23K35/22 , B23K35/26
CPC classification number: H01L23/3735 , H01L23/3107 , H01L23/3677 , H01L23/4334 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29294 , H01L2224/29298 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/78 , H01L2224/78301 , H01L2224/83192 , H01L2224/83206 , H01L2224/83385 , H01L2224/83801 , H01L2224/85181 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01012 , H01L2924/01032 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明的课题是在管芯键合中可使用无铅焊锡。在半导体芯片(1)与Cu合金制的键和焊盘(4)之间配置应力缓冲板(8)，通过用以固相温度大于等于270℃且液相温度小于等于400℃的Sn-Sb-Ag-Cu为主要构成元素的无铅焊锡的接合材料(10、9)接合半导体芯片(1)与应力缓冲板(8)和应力缓冲板(8)与键和焊盘(4)，可使用无铅焊锡进行管芯键合而不发生芯片裂纹。
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公开(公告)号：CN1812083A
公开(公告)日：2006-08-02
申请号：CN200610005710.9
申请日：2006-01-06
Applicant: 株式会社瑞萨科技
IPC: H01L23/488 , H01L21/60 , H01L21/52 , B23K35/22 , B23K35/26
CPC classification number: H01L23/3735 , H01L23/3107 , H01L23/3677 , H01L23/4334 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/743 , H01L24/78 , H01L24/83 , H01L24/85 , H01L24/97 , H01L2224/04042 , H01L2224/05553 , H01L2224/05624 , H01L2224/05647 , H01L2224/0603 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29294 , H01L2224/29298 , H01L2224/32245 , H01L2224/45124 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/48724 , H01L2224/48747 , H01L2224/49171 , H01L2224/73265 , H01L2224/743 , H01L2224/78 , H01L2224/78301 , H01L2224/83192 , H01L2224/83206 , H01L2224/83385 , H01L2224/83801 , H01L2224/85181 , H01L2224/85205 , H01L2224/92 , H01L2224/92247 , H01L2224/97 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01051 , H01L2924/01073 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/0134 , H01L2924/014 , H01L2924/10253 , H01L2924/12041 , H01L2924/181 , H01L2924/19043 , H01L2924/351 , H01L2924/00014 , H01L2224/85 , H01L2224/83 , H01L2924/01039 , H01L2924/00 , H01L2924/00012 , H01L2924/01031 , H01L2924/01012 , H01L2924/01032 , H01L2924/01026 , H01L2924/01083 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
Abstract: 本发明的课题是在管芯键合中可使用无铅焊锡。在半导体芯片1与Cu合金制的键和焊盘4之间配置应力缓冲板8，通过用以固相温度大于等于270℃且液相温度小于等于400℃的Sn－Sb－Ag－Cu为主要构成元素的无铅焊锡的接合材料10、9接合半导体芯片1与应力缓冲板8和应力缓冲板8与键和焊盘4，可使用无铅焊锡进行管芯键合而不发生芯片裂纹。
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