Abstract:
Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.
Abstract:
There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110) for emitting an electron beam; an acceleration tube (170) having acceleration electrodes (170a-170f) and operative to accelerate the electron beam; a first electrode (160) operative such that a lens action is produced between this first electrode (160) and the initial stage of acceleration electrode (170a); an accelerating voltage supply (112) for supplying an accelerating voltage to the acceleration tube (170); a first electrode voltage supply (162) for supplying a voltage to the first electrode (160); and a controller (109b) for controlling the first electrode voltage supply (162). The lens action produced between the first electrode (160) and the initial stage of acceleration electrode (170a) forms a crossover (CO2) of the electron beam. The controller (109b) controls the first electrode voltage supply (162) such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode (160) and the voltage applied to the initial stage of acceleration electrode (170a) is kept constant.
Abstract:
The plasma is formed between electrodes to be energized from an electric power source, containing a partially ionized mass having a luminescence region including neutral atoms (NA), primary electrons (PE), secondary electrons (SE), and ions.The method comprises the interspersed steps of: accelerating the primary electrons (PE) toward one of said electrodes (10) polarized by a short, positive, high voltage pulse, impacting primary electrons (PE) against said electrode (10) and ejecting secondary electrons (SE) from it; subsequently, accelerating the secondary electrons (SE) toward the luminescence region by polarization of said electrode (10) by a negative voltage with a lower voltage pulse colliding the secondary electrons with neutral atoms (NA) and producing positive ions (PI) and derived electrons (DE); the negative pulse must have a period of time sufficient to accelerate the positive ions (PI) of the luminescent region towards the electrodes 10, striking the surface of said electrodes; repeating the previous steps in order to obtain a steady state plasma with a desired degree of ionization. The control of the intensity and the period of the positive and negative pulses allow the control of the degree of ionization and the volume of the luminescent region of the plasma.
Abstract:
A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coils operably are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operably coupled to the yoke and configured to generate a predominantly multipole magnetic field, wherein the predominantly multipole magnetic field is one of static or time-varying.
Abstract:
Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.
Abstract:
Disclosed is a plasma processing apparatus including a processing container, an ion trapping member partitioning the inside of the processing container into a processing space and a non-processing space and transmitting radicals and trap ions, a placing table, a first gas supply unit supplying a first processing gas into the non-processing space, a second gas supply unit supplying a second processing gas into the processing space, a first high frequency power supply supplying a high frequency power to generate radicals and ions in the non-processing space, a second high frequency power supply supplying a high frequency power to generate radicals and ions in the processing space, and a third high frequency power supply supplying a high frequency power of a lower frequency than that of the high frequency power supplied from the second high frequency power supply to draw the ions generated in the processing space into the workpiece.
Abstract:
An apparatus for separating ions having different mass or charge includes a waveguide conduit coupled to a microwave source for transmitting microwaves through openings in the waveguide conduit. The outlet ends of pipes are positioned at the openings for transporting material from a material source to the openings. A plasma chamber is in communication with the waveguide tube through the openings. The plasma chamber receives through the openings microwaves from the waveguide tube and material from the pipes. The plasma chamber includes magnets disposed in an outer wall thereof for forming a magnetic field in the plasma chamber. The plasma chamber includes a charged cover at a side of the chamber opposite the side containing the openings. The cover includes extraction holes through which ion beams from the plasma chamber are extracted. Deflectors coupled to one of the extraction holes receive the ion beams extracted from the plasma chamber. Each deflector bends an ion beam and provides separate passages for capturing ions following different trajectories from the bending of the ion beam based on their respective mass or charge.
Abstract:
A system and process are disclosed for ultrasensitive determination of target isotopes of analytical interest in a sample. Target isotopes may be implanted in an implant area on a high-purity substrate to pre-concentrate the target isotopes free of contaminants. A known quantity of a tracer isotope may also be implanted. Target isotopes and tracer isotopes may be determined in a mass spectrometer. The present invention provides ultrasensitive determination of target isotopes in the sample.
Abstract:
The present invention relates to a lens-less Foucault method wherein a transmission electron microscope objective lens (5) is turned off, an electron beam crossover (11, 13) is matched with a selected area aperture (65), and the focal distance of a first imaging lens (61) can be changed to enable switching between a sample image observation mode and a sample diffraction pattern observation mode, characterized in that a deflector (81) is disposed in a stage following the first imaging lens (61), and conditions for an irradiating optical system (4) can be fixed after conditions for the imaging optical system have been determined. This allows a lens-less Foucault method to be implemented in a common general-use transmission electron microscope with no magnetic shielding lens equipped, without burdening the operator.
Abstract:
A scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) apparatus that includes a scanning electron microscope, an x-ray detector, and an auxiliary acceleration voltage source. The scanning electron microscope includes a sample holder, and a layered electron beam column arranged to output an electron beam towards the sample holder at an initial beam energy. The auxiliary acceleration voltage source is to apply an auxiliary acceleration voltage between the sample holder and the layered electron beam column to accelerate the electron beam to a final beam energy. At the final beam energy, the electron beam is capable of generating x-rays at multiple wavelengths from a larger range of atomic species than the electron beam at the initial beam energy.