公开(公告)号：US09966439B2

公开(公告)日：2018-05-08

申请号：US14904042

申请日：2014-07-02

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora ,  Tomohiro Yamaguchi ,  Tohru Honda

IPC: H01L21/02 ,  C09K11/80 ,  H01L29/24 ,  C01G15/00 ,  C30B29/16 ,  C30B29/22 ,  C30B25/18 ,  C30B29/40 ,  C30B25/02 ,  H01L29/04 ,  H01L29/12

CPC classification number: H01L29/24 ,  C01G15/00 ,  C01G15/006 ,  C01P2002/72 ,  C30B25/02 ,  C30B25/183 ,  C30B29/16 ,  C30B29/22 ,  C30B29/403 ,  H01L29/04 ,  H01L29/122

Abstract: A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice.

公开(公告)号：US09828694B2

公开(公告)日：2017-11-28

申请号：US14838126

申请日：2015-08-27

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Toshimi Hitora

IPC: H01L21/288 ,  H01L29/45 ,  C30B19/00 ,  C23C16/18 ,  C23C16/448 ,  C03C17/10 ,  C30B29/02

CPC classification number: C30B19/00 ,  C03C17/10 ,  C03C2217/253 ,  C03C2218/112 ,  C23C16/18 ,  C23C16/4486 ,  C30B29/02 ,  H01L21/288 ,  H01L29/45

Abstract: Provided is a metal film forming method which can form a metal film having excellent adhesion industrially advantageously and a metal film formed by using the method. A method of forming a metal film on a base includes an atomization step of atomizing a raw-material solution into a mist, in which the raw-material is prepared by dissolving or dispersing a metal in an organic solvent containing an oxidant, a chelating agent, or a protonic acid; a carrier-gas supply step of supplying a carrier gas to the mist; a mist supply step of supplying the mist onto the base using the carrier gas; and a metal-film formation step of forming the metal film on part or all of a surface of the base to causing the mist to thermally react.

公开(公告)号：US20150325660A1

公开(公告)日：2015-11-12

申请号：US14578072

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda ,  Akio Takatsuka

IPC: H01L29/22 ,  H01L33/28 ,  H01L29/04

CPC classification number: H01L29/22 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/1066 ,  H01L29/24 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/7722 ,  H01L29/7786 ,  H01L29/7813 ,  H01L29/7828 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26 ,  H01L33/28 ,  H01L33/42 ,  H01L2933/0016

Abstract: Provided is a crystalline multilayer structure having good semiconductor properties. In particular, the crystalline multilayer structure has good electrical properties as follows: the controllability of conductivity is good; and vertical conduction is possible. A crystalline multilayer structure includes a metal layer containing a uniaxially oriented metal as a major component and a semiconductor layer disposed directly on the metal layer or with another layer therebetween and containing a crystalline oxide semiconductor as a major component. The crystalline oxide semiconductor contains one or more metals selected from gallium, indium, and aluminum and is uniaxially oriented.

Abstract translation: 提供了具有良好半导体特性的结晶多层结构。 特别地，结晶多层结构具有如下良好的电性能：导电性的可控性良好; 并且垂直传导是可能的。 结晶多层结构包括含有单轴取向金属作为主要成分的金属层和直接设置在金属层上的半导体层或其间的另一层并且包含结晶氧化物半导体作为主要成分的金属层。 结晶氧化物半导体包含一种或多种选自镓，铟和铝的金属，并且是单轴取向的。

公开(公告)号：US20150279927A1

公开(公告)日：2015-10-01

申请号：US14577917

申请日：2014-12-19

Applicant: FLOSFIA INC.

Inventor： Toshimi Hitora ,  Masaya Oda

IPC: H01L29/04 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/26 ,  H01L21/477

CPC classification number: H01L29/04 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02565 ,  H01L21/02628 ,  H01L21/477 ,  H01L29/24 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696 ,  H01L29/8611 ,  H01L29/872

Abstract: Provided is a highly conductive crystalline multilayer structure including a corundum-structured crystalline oxide thin film whose resistance has not increased even after annealing (heating). The crystalline multilayer structure includes a base substrate and the corundum-structured crystalline oxide thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide thin film is 1 μm or more in a thickness and 80 mΩcm or less in an electrical resistivity. A semiconductor device includes the crystalline multilayer structure.

Abstract translation: 提供了一种高导电性结晶多层结构，其包括即使在退火（加热）后电阻也不增加的刚玉结构的结晶氧化物薄膜。 结晶多层结构包括基底和刚玉结构的结晶氧化物薄膜，其直接设置在基底基板上，或者在其间具有另一层。 结晶性氧化物薄膜的厚度为1μm以上，电阻率为80mΩ·cm以上。 半导体器件包括结晶多层结构。

公开(公告)号：US12107137B2

公开(公告)日：2024-10-01

申请号：US17834089

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Fujio Okui ,  Yasushi Higuchi ,  Koji Amazutsumi ,  Hidetaka Shibata ,  Yuji Kato ,  Atsushi Terai

IPC: H01L29/06 ,  H01L29/47 ,  H01L29/872

CPC classification number: H01L29/475 ,  H01L29/0649 ,  H01L29/872

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

公开(公告)号：US20240309556A1

公开(公告)日：2024-09-19

申请号：US18603541

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto SHIMIZU ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: C30B29/54 ,  C30B25/18

CPC classification number: C30B29/54 ,  C30B25/18

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.

公开(公告)号：US20240307913A1

公开(公告)日：2024-09-19

申请号：US18603868

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto Shimizu ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: B05D1/00 ,  C09D4/00

CPC classification number: B05D1/60 ,  B05D1/005 ,  C09D4/00 ,  B05D2203/30

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, a metal complex is used, which shows an exothermic peak at 480°° C. to 520°° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.

公开(公告)号：US11804519B2

公开(公告)日：2023-10-31

申请号：US17239931

申请日：2021-04-26

Applicant: FLOSFIA INC. ,  National Institute for Material Science

Inventor： Yuichi Oshima ,  Katsuaki Kawara

IPC: H01L29/04 ,  H01L21/02 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02609 ,  H01L29/247

Abstract: A crystalline multilayer structure having a high-quality crystalline layer and a semiconductor device employing such a crystalline multilayer structure are provided. A crystalline multilayer structure, including a first crystalline layer having a first crystal, and a second crystalline layer stacked on the first crystalline layer and having a second crystal, wherein the first crystal includes polycrystalline κ-Ga2O3 and the second crystal is a single crystal of a crystalline oxide.

公开(公告)号：US11670688B2

公开(公告)日：2023-06-06

申请号：US16764615

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Masahiro Sugimoto ,  Takashi Shinohe

IPC: H01L29/24 ,  C23C16/448 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H02M3/335

CPC classification number: H01L29/24 ,  C23C16/4481 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66969 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7813 ,  H02M3/33576

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

公开(公告)号：US20230019414A1

公开(公告)日：2023-01-19

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/66 ,  H01L23/367 ,  H01L29/872

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.