Patent search ap:("ASML NETHERLANDS BV") AND inv:"JONKERS PETER GERARDUS" Page 1

1.

发明公开
EUV 리소그래피 시스템 내에서의 광학 요소 수명 연장 审中-公开

公开(公告)号：KR20200125942A

公开(公告)日：2020-11-05

申请号：KR20207025275

申请日：2019-02-28

Applicant: ASML NETHERLANDS BV

Inventor： MA YUE , KEMPEN ANTONIUS THEODORUS WILHELMUS , HUMMLER KLAUS MARTIN , MOORS JOHANNES HUBERTUS JOSEPHINA , ROMMERS JEROEN HUBERT , VAN DE WIEL HUBERTUS JOHANNES , LAFORGE ANDREW DAVID , BRIZUELA FERNANDO , WIEGGERS ROB CARLO , GOMES UMESH PRASAD , NEDANOVSKA ELENA , KORKMAZ CELAL , KIM ALEXANDER DOWNN , DUARTE RODRIGUES NUNES RUI MIGUEL , VAN DIJCK HENDRIKUS ALPHONSUS LUDOVICUS , VAN DRENT WILLIAM PETER , JONKERS PETER GERARDUS , ZHU QIUSHI , YAGHOOBI PARHAM , WESTERLAKEN JAN STEVEN CHRISTIAAN , LEENDERS MARTINUS HENDRIKUS ANTONIUS , ERSHOV ALEXANDER IGOREVICH , FOMENKOV IGOR VLADIMIROVICH , LIU FEI , JACOBS JOHANNES HENRICUS WILHELMUS , KUZNETSOV ALEXEY SERGEEVICH

IPC: G03F7/20 , G02B5/08 , G02B27/00 , H05G2/00

Abstract: EUV 방사선을생성하기위한시스템(SO) 내의하나이상의반사광학요소의반사율열화는광학요소를포함하는진공챔버(26) 내로의가스의제어된도입에의하여감소된다. 가스는수소와같은또 다른가스의흐름에추가될수 있거나수소라디칼의도입과번갈아가며추가될수 있다.

2.

发明专利
Lithographic apparatus and method 有权
Title translation: LITHOGRAPHIC设备和方法

公开(公告)号：JP2011135078A

公开(公告)日：2011-07-07

申请号：JP2010282944

申请日：2010-12-20

Applicant: Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.

Inventor： HAN-KWANG NIENHUYS , JONKERS PETER GERARDUS , ALEXANDER MARINUS ARNORDUS HEIBERTS

IPC: H01L21/027 , G03F7/20

CPC classification number: G03F7/70916 , G03F7/70233 , G03F7/70833 , G03F7/70883 , G03F7/70908

Abstract: PROBLEM TO BE SOLVED: To improve the effect of preventing the infiltration of contaminants into a projection system of a lithographic apparatus. SOLUTION: The lithographic apparatus has a projection system configured to project a patterned radiation beam onto a substrate. The projection system has an opening that allows the patterned radiation beam to pass therethrough. At least part of the opening has an inclined surface of a wall of the projection system and an inclined surface of a mirror of the projection system. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提高防止污染物侵入光刻设备的投影系统的效果。解决方案：光刻设备具有被配置为将图案化的辐射束投影到衬底上的投影系统。投影系统具有允许图案化的辐射束通过的开口。开口的至少一部分具有投影系统的壁的倾斜表面和投影系统的反射镜的倾斜表面。版权所有（C）2011，JPO＆INPIT

3.

发明专利
Lithography device and device manufacturing method 有权
Title translation: LITHOGRAPHY DEVICE AND DEVICE MANUFACTURING METHOD

公开(公告)号：JP2009302536A

公开(公告)日：2009-12-24

申请号：JP2009135672

申请日：2009-06-05

Applicant: Asml Netherlands Bv , エーエスエムエルネザーランズビー.ブイ.

Inventor： LOOPSTRA ERIK ROELOF , BARTRAY PETRUS RUTGERUS , LEVASIER LEON MARTIN , LUTTIKHUIS BERNARDUS ANTONIUS , SMITS JOSEPHUS JACOBUS , AANTJES ANTHONIE , WIJCKMANS MAURICE WILLEM JOZEF , RIDDER JOHANNES BERNARDUS , SCHREUDER ANDRE , PAULUSSEN DENNIS JOZEF MARIA , JONKERS PETER GERARDUS , POINCELIN HUGUES , HEUSSCHEN FRANSISCUS THERESIA

IPC: H01L21/027 , G03F7/20

CPC classification number: G03F7/709 , G03F7/70808

Abstract: PROBLEM TO BE SOLVED: To suppress transmission of undesirable vibrations with respect to a lithography device and a device manufacturing method. SOLUTION: The lithography device includes a projection system configured to project an image on a substrate, a substrate table configured to support the substrate, a first chamber including the projection system, and a second chamber including the substrate table and first frame. The device includes a base frame configured so as to support the second chamber and an intermediate frame coupled to the base frame. The intermediate frame is configured to separate the first chamber and the second chamber. The device includes a support coupled to the first frame. The support is configured to support the first chamber through coupled openings that the intermediate frame and second chamber have. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：抑制相对于光刻设备的不期望的振动的传输和装置制造方法。光刻设备包括：投影系统，被配置为将图像投影在基板上;衬底台，其被配置为支撑所述基板;第一室，包括所述投影系统;以及第二室，包括所述基板台和所述第一框架。该装置包括被配置为支撑第二室的基座框架和耦合到基架的中间框架。中间框架构造成分离第一室和第二室。该装置包括联接到第一框架的支撑件。支撑构造成通过中间框架和第二室具有的联接开口支撑第一室。版权所有（C）2010，JPO＆INPIT

4.

发明申请
METHOD AND SYSTEM FOR DETERMINING A SUPPRESSION FACTOR OF A SUPPRESSION SYSTEM AND A LITHOGRAPHIC APPARATUS 审中-公开
Title translation: 用于确定抑制系统的抑制因子的方法和系统和光刻设备

公开(公告)号：WO2009061188A2

公开(公告)日：2009-05-14

申请号：PCT/NL2008050700

申请日：2008-11-06

Applicant: ASML NETHERLANDS BV , SCHIMMEL HENDRIKUS GIJSBERTUS , VAN EMPEL TJARKO ADRIAAN RUDOL , SWINKELS GERARDUS HUBERTUS PET , HAAST MARC ANTONIUS MARIA , LABETSKI DZMITRY , FRERIKS JOHANNES MARIA , VAN DE VIJVER YURI JOHANNES GA , VERSTEEG WENDELIN JOHANNA MARI , JONKERS PETER GERARDUS

Inventor： SCHIMMEL HENDRIKUS GIJSBERTUS , VAN EMPEL TJARKO ADRIAAN RUDOLF , SWINKELS GERARDUS HUBERTUS PET , HAAST MARC ANTONIUS MARIA , LABETSKI DZMITRY , FRERIKS JOHANNES MARIA , VAN DE VIJVER YURI JOHANNES GA , VERSTEEG WENDELIN JOHANNA MARI , JONKERS PETER GERARDUS

IPC: G03F7/20

CPC classification number: G03F7/70916 , G03F7/70841 , G03F7/70908

Abstract: The invention relates to a method for determining a suppression factor of a suppression system. The suppression system is arranged to suppress migration of a contaminant gas out of a first system. The suppression factor is an indication of the performance of the suppression system. The method includes introducing a tracer gas in the sub-system, providing a detection system configured to detect the amount of tracer gas that has migrated out of the first system, determining a first suppression factor for the suppression system for the tracer gas. The method further includes determining a second suppression factor for the suppression system for the contaminant gas based on the first suppression factor.

Abstract translation: 本发明涉及一种确定抑制系统抑制因子的方法。抑制系统被布置成抑制污染气体从第一系统中的迁移。抑制因子表示抑制系统的性能。该方法包括在子系统中引入示踪气体，提供检测系统，其被配置为检测已经从第一系统迁出的示踪气体的量，确定示踪气体的抑制系统的第一抑制因子。该方法还包括基于第一抑制因子确定用于污染气体的抑制系统的第二抑制因子。