Abstract:
PURPOSE: An up-converting digital-RF transmitter using scrambler is provided to increase the whole linearity index of a transmitter system. CONSTITUTION: Decoding units(33,34) convert a digital signal into a signal of unit-weighted-code in a binary-code type. Scrambling units(35,36) scramble an order of converted output signals. A plurality of digital RF(Radio Frequency) converting cells is connected to the multiple-bit output signals of the scrambling unit. A differential RF signal is generated by mixing a differential carrier signal and a control signal. A local oscillator or a frequency synthesizer(61) generate the differential carrier signal.
Abstract:
PURPOSE: A frequency comparator is provided to form a simple hardware structure by using a shift register in a frequency comparator applied to an adaptive frequency calibration loop of a PLP(phase-locked loop). CONSTITUTION: An input unit(230) generates a first reference signal and a second reference signal having differential relation and a 180 degree phase difference of 50% of a duty ratio over a reference signal divided from a reference frequency demultiplier. An up shift register(240) and a down shift register(250) respectively connect a first reference signal and a second reference signal to each reset terminal. An input terminal of the up shift register and the down shift register receives a logic high signal. An output unit(260) outputs a comparison value by comparing a first lower output bit in the up shift register and a second lower output bit in the down shift register.
Abstract:
PURPOSE: A time-interleaving type pulse-signal recovering device is provided to reduce a time to restore a pulse signal received from a receiver. CONSTITUTION: A time-interleaving type pulse-signal recovering device comprises a plurality of sampling blocks, a sampling clock generator, and a multiplexer(120). The sampling block comprises buffer arrays(100_1-100_N). The buffer array generates a plurality of signals by using a sampling period. A plurality of the sampling blocks comprises a track and hold unit. The track and hold unit senses the level of a received pulse signal. The multiplexer inputs the output signal of the track and hold unit and outputs one input signal from a plurality of input signals.
Abstract:
PURPOSE: A second order sinc decimation filter is provided to reuse a clock signal for controlling an input unit of a signal transmitting channel, thereby drastically simplifying a switching circuit. CONSTITUTION: A second order sinc decimation filter includes six signal transmitting channels(511~516) and two signal output channels. The signal transmitting channels are connected between input node A and middle node B. The signal output channels are connected between middle node B and output node C. The signal transmitting channels and the signal output channels can configure a signal transmitting unit and an adding unit of the second order sinc decimation filter. A discrete signal can be applied to input node A. The discrete signal is generated by sampling a current signal outputted from a transconductor. A second order decimation circuit operates according to a clock signal with signal timing.
Abstract:
PURPOSE: A digital lock detection apparatus and a frequency synthesizer having the same are provided to detect the lock state in the digital PLL by using a simple delay circuit and a comparator circuit. CONSTITUTION: A comparison unit(210) is inputted with a plurality of control bits. The comparator outputs a bit signal including the bit information on the locking state of the control bits. A delay cell block(220) outputs one clock signal by combining one bit signal outputted from the comparator and a signal which is made by delaying the bit signal as much as the predetermined time.
Abstract:
PURPOSE: A digital proportional integral loop filter is provided to improve the stability of all digital phase locked loop using a proportional integral loop filter. CONSTITUTION: A first proportion amplifier(210) multiplies a first proportion loop gain and a phase-error value. A first integral amplifier(220) multiplies a phase error accumulated value and a first integral loop gain. A second proportion amplifier(240) multiplies the phase-error value and a second proportion loop. A second integral amplifier(250) multiplies the phase-error accumulated value and a second integral loop gain. The first offset generating unit(260) generates a first offset. A second offset generating unit(270) generates a second offset. A first adder(230) adds the outputs of the first proportion amplifier and the first integral amplifier. A second adder(280) adds the outputs of the second proportion amplifier, the second integral amplifier, the first offset generating unit, and the second offset generating unit.
Abstract:
PURPOSE: An interfering signal controlling apparatus and an interfering signal controlling method using a selective frequency phase converter are provided to effectively eliminate the interfering signal not only narrow frequency band but wide frequency band using a differential amplification principle. CONSTITUTION: A first phase converter(20) differential-outputs a first and a second signals including a phase difference of 180 angle by changing the phase of received RF signal. A second phase converter(21) changes selectively the phase of the signal of a specific frequency band as a specific size in the first signal. A third phase converter(22) changes selectively the phase of the signal of the specific frequency band as the specific size in the second signal. An adder(50) adds the output of the second phase converter and the output of the third phase converter. The specific frequency band signal of the second phase converter and the specific frequency band signal of the third phase converter not have a phase difference of 180 angle.
Abstract:
PURPOSE: An operation transconductance amplifier for a filter designing of a vhf bandwidth is provided to gain an OTA property by using a base unit conversion cell of fewer comparing with existing Nauta OTA circuit structure. CONSTITUTION: A first and a second parallel inverters(21,22) are respectively inputted a first and a second input voltage through an input terminal. The input terminal and an output terminal of a first intersection feedback inverter(23) are respectively connected to the output terminal of the second parallel conversion cell and the output terminal of the first parallel conversion cell. The input terminal and the output terminal of a second intersection feedback inverter(24) are respectively connected to the output terminal of the first parallel conversion cell and the output terminal of the second parallel conversion cell. A transconductance and an outputting admittance of the first parallel inverter and the second parallel inverter are similar each other. The transconductance and the outputting admittance of the first intersection feedback inverter and the second intersection feedback inverter are similar each other.
Abstract:
A photo detector array in which a readout IC is integrated for a laser image signal and a manufacturing method thereof are provided to simplify a manufacturing process by excluding a hybrid packaging process of a separate flip chip. A plurality of optical detection pixels(210) includes a photo diode and a first heterojunction bipolar transistor. The photo diode converts incident light energy into electrical energy. The first heterojunction bipolar transistor selectively converts the electrical energy of the photo diode into electrical signals. An output control circuit(220) includes a second heterojunction bipolar transistor which controls an output of the electrical signals transmitted from a plurality of optical detection pixels. The photo diode, the first heterojunction bipolar transistor, and the second heterojunction bipolar transistor are formed into a single chip integration type on a semi-insulation InP substrate.
Abstract:
본 발명은 티형 게이트 전극을 갖는 부정형 고 전자 이동도 트랜지스터 제조 방법에 관한 것으로서, 에피 성장층이 성장된 기판 상에 소스 및 드레인 전극을 형성하는 단계; 상기 소스 및 드레인 전극이 형성된 상기 기판 전면에 보호막을 형성하는 단계; 상기 보호막 상에 제1 감광막을 형성한 후, 마스크 패턴을 이용하여 상기 기판의 상부가 노출되도록 상기 제1 감광막과 상기 보호막을 패터닝하는 단계; 상기 보호막 상에 남아있는 상기 제1 감광막을 제거한 후, 상기 기판 전면에 상기 보호막 패턴 폭보다 적은 미세 패턴을 갖는 제2 감광막을 형성하는 단계; 상기 미세 패턴을 이용하여 상기 남겨진 보호막을 식각한 후, 상기 제2 감광막을 제거하는 단계; 상기 기판 전면에 다층 구조의 제3 감광막을 형성한 후, 티자 형태의 게이트 전극이 형성되도록 상기 제3 감광막을 패터닝하는 단계; 상기 미세 패턴으로 식각된 상기 보호막을 통해 상기 기판의 상부를 식각하여 상기 기판 상면에 리세스를 형성하는 단계; 및 상기 리세스가 형성된 상기 기판 전면에 게이트 전극용 금속을 증착한 후, 상기 제3 감광막 및 상기 게이트 전극용 금속을 제거하여 상기 리세스를 통해 상기 기판과 연결되는 티자형 게이트 전극을 형성하는 단계를 포함한다. 이에 따라, 게이트 전극의 안정성을 향상시키고 소자의 활성영역을 보호하며, 티형 게이트의 다리 영역에만 보호막이 남게 하여 기생 캐패시턴스를 감소시킬 수 있다. 또한, 게이트 리세스 식각시 건식 식각 방법을 이용함으로써, 게이트 미세 선폭을 유지하고, 소스 저항을 감소시키고, 게이트-소스 및 게이트-드레인 캐패시턴스를 감소시켜 고주파 특성을 향상시킬 수 있다. 부정형 고 전자 이동도 트랜지스터, 티형 게이트, 리세스 식각, 실리콘 질화막, 반응성 이온 식각, 유도 결합 플라즈마