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11.
公开(公告)号:KR101828103B1
公开(公告)日:2018-02-09
申请号:KR1020130070236
申请日:2013-06-19
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/311 , H01L21/306
CPC classification number: H01L21/02057 , G03F7/423 , H01L21/31133 , H01L21/67051
Abstract: 본발명은, 기판의하지층에손상을주지않고, 제거대상층을양호하게제거하는것을목적으로한다. 본발명에서는, 하지층의표면에제거대상층을형성한기판(3)에황산과과산화수소수의혼합액을공급하여제거대상층을제거하는기판처리장치(1)에있어서, 기판(3)을처리하기위한기판처리실(16)과, 기판처리실(16)에설치되며, 기판(3)을유지하기위한기판유지수단(12)과, 기판유지수단(12)으로유지된기판에황산과과산화수소수의혼합액을하지층에손상을주지않는온도및 과산화수소수의혼합비로공급하는혼합액공급수단(13)과, 기판(3)에 OH기를포함하는유체를공급하는 OH기공급수단(14)을가지며, OH기공급수단(14)은, 혼합액과 OH기가기판(3) 상에서혼합되었을때에하지층에손상을주지않는양의 OH기를포함하는유체를공급하는것으로하였다.
Abstract translation: 本发明的一个目的是令人满意地去除去除目标层而不损坏基板的基层。 衬底就目前来说,为在基板3上去除移除目标层通过供给混合液的硫酸和过氧化氢数目的本发明,以形成层的表面上的移除目标层的基板处理装置1,处理的基片(3)的 衬底保持装置12,其设置在衬底处理室16中,用于在由衬底保持装置12保持的衬底上保持衬底3以及硫酸和过氧化氢水溶液的混合液体; 用于将含有OH基的流体供给基板3的OH基供给装置14. OH基供给装置14向OH基供给装置14供给OH基供给装置14, 当混合液和OH基混合在基板(3)上时,提供含有不损伤底层的含OH基的流体。
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公开(公告)号:KR101774427B1
公开(公告)日:2017-09-04
申请号:KR1020120021826
申请日:2012-03-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/306 , H01L21/67
Abstract: 실리콘산화막에대한실리콘질화막의높은에칭선택비와, 실리콘질화막의높은에칭레이트를양립시킬수 있는기술을제공한다. 에칭방법은실리콘질화막및 실리콘산화막이표면에노출된기판에가열된 HSO를공급하여기판을가열하는프리히팅공정과, 이후, 상기기판에가열된 HSO와, HF, NHF 및 NHHF중적어도어느하나와, HO와의혼합액체를공급하는에칭공정을구비하고있다.
Abstract translation: 可以实现既能够实现氮化硅膜对氧化硅膜的高蚀刻选择性又能够实现氮化硅膜的高蚀刻速率的技术。 该蚀刻方法包括:预热步骤,通过将加热的HSO供给暴露在氮化硅膜和氧化硅膜的表面上的衬底,然后通过HSO,HF,NHF和NHHF中的任一个加热衬底来加热衬底 以及用于供应混合液体的蚀刻工艺。
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公开(公告)号:KR101608105B1
公开(公告)日:2016-03-31
申请号:KR1020110127651
申请日:2011-12-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/68728 , B08B3/04 , B08B3/041 , H01L21/67017 , H01L21/67051 , H01L21/6719 , H01L21/68742
Abstract: 본발명은, 노즐을지지하는노즐지지아암에부착된오물에의하여처리실내의기판이오염되는것을방지할수 있는액 처리장치및 액처리방법을제공한다. 본발명의액 처리장치(10)는, 기판(W)을유지하는기판유지부(21) 및해당기판유지부(21)의주위에배치되는컵(40)이내부에설치된처리실(20)과, 기판유지부(21)에유지된기판(W)에대하여유체를공급하기위한노즐(82a)과, 노즐(82a)을지지하는노즐지지아암(82)을구비하고있다. 액처리장치(10)에는, 노즐지지아암(82)을세정하기위한아암세정부(88)가설치된다.
Abstract translation: 本发明提供一种液体处理装置和液体处理方法,其能够防止由于附着到支撑喷嘴的喷嘴支撑臂上的污物而污染处理室中的基板。 本发明的液体处理装置10包括用于保持基板W的基板保持部21和配置在基板保持部21周围的杯40内的处理室20, 喷嘴82a用于向由基板支架21保持的基板W供给流体,喷嘴支撑臂82用于保持喷嘴82a。 液处理装置10具备用于清扫喷嘴支承臂82的臂清扫部88。
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公开(公告)号:KR1020150125586A
公开(公告)日:2015-11-09
申请号:KR1020150057995
申请日:2015-04-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/67
CPC classification number: H01L21/67051 , B05B12/14 , B05C11/115 , H01L21/306 , H01L21/31 , H01L21/67017 , H01L21/6715
Abstract: 노즐내에서의가수분해열화에따른실릴화액의폐기량을저감한다. 노즐(43) 내의실릴화액유로(431)에차단유체를공급함으로써, 실릴화액유로내에있는실릴화액보다토출구(434)에가까운측에존재하는차단유체에의해실릴화액유로내에있는실릴화액을토출구의외부의분위기로부터차단한다.
Abstract translation: 由于喷嘴中的水解劣化引起的消耗的甲硅烷基化液体的量减少。 向喷嘴(43)中的甲硅烷基化液体流路(431)供给封闭流体,以通过存在于更靠近排出口的一侧的阻塞流体从排出孔的外部气氛中阻断甲硅烷醇化液体流路中的甲硅烷基化液体 (434)比硅烷化液体流路中的甲硅烷基化液体。
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公开(公告)号:KR1020140147716A
公开(公告)日:2014-12-30
申请号:KR1020140073526
申请日:2014-06-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302 , H01L21/08 , H01L21/02
CPC classification number: B05D3/107 , B05B3/001 , B05B12/04 , B05D1/005 , B05D5/08 , H01L21/67051 , H01L21/68792
Abstract: Disclosed is a liquid processing method which may de-electrify the surface of a hydrophobized substrate. A substrate electrified by a liquid processing is de-electrified by supplying hydrophobizing liquid to the surface of a substrate (W) subjected to the liquid processing while rotating the substrate (W) for hydrophobizing the surface of the substrate, and performing rinsing by supplying alkaline rinsing liquid to the hydrophobized surface of the substrate (W).
Abstract translation: 公开了一种可以使疏水化基材的表面去电的液体处理方法。 通过将液体处理带电的基板通过向基板(W)的表面供给疏水化液体而进行脱气,同时旋转用于使基板表面疏水化的基板(W),并且通过供给碱性进行漂洗 冲洗液体到基底的疏水化表面(W)。
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公开(公告)号:KR1020130121033A
公开(公告)日:2013-11-05
申请号:KR1020130045384
申请日:2013-04-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/027 , H01L21/302
CPC classification number: H01L21/02076 , G03F7/423 , H01L21/31133 , H01L21/6708 , H01L21/0273 , G11C7/22 , H01L21/302 , H03K5/156
Abstract: The purpose of the present invention is to reduce damage to a film and improve the efficiency of removing a resist layer in an SPM process. A substrate processing method includes a process for producing an SPM solution of a first temperature including enough Caro’s acid with a resist layer delamination effect by mixing heated sulfuric acid with oxygenated water and a process for cooling the SPM solution to a second temperature to have a film loss reduction effect after the SPM solution of the first temperature is produced, and a process for removing the resist layer by touching the resist layer with the SPM solution of the second temperature.
Abstract translation: 本发明的目的是减少对膜的损伤并提高在SPM工艺中除去抗蚀剂层的效率。 基板处理方法包括通过将加热的硫酸与含氧水混合并制备具有足够的Caro酸的第一温度的SPM溶液和具有抗蚀剂层分层效果的方法,以及将SPM溶液冷却至第二温度的方法以具有 产生在第一温度的SPM溶液之后的膜损失降低效果,以及通过用第二温度的SPM溶液接触抗蚀剂层来除去抗蚀剂层的工艺。
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公开(公告)号:KR1020130008458A
公开(公告)日:2013-01-22
申请号:KR1020120066770
申请日:2012-06-21
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/02041 , H01L21/67051 , H01L21/6719 , Y02E60/34 , Y10T137/0318 , Y10T137/598
Abstract: PURPOSE: A liquid processing apparatus and a liquid processing method are provided to supply processing liquid to the substrate while the substrate is rotated and to facilitate a cleaning process. CONSTITUTION: A substrate holding unit horizontally maintains a substrate. A process liquid supply nozzle(82a) supplies processing liquid to the substrate. An upper plate rotation unit rotates the upper plate. A cup circumference case(50) is installed at a cup(40). A nozzle support arm supports the process liquid supply nozzle.
Abstract translation: 目的:提供一种液体处理装置和液体处理方法,以在衬底旋转的同时向衬底提供处理液体并促进清洁过程。 构成:基板保持单元水平地保持基板。 处理液供给喷嘴(82a)向处理液供给处理液。 上板旋转单元使上板旋转。 一个杯形外壳(50)安装在一个杯子(40)上。 喷嘴支撑臂支撑工艺液体供应喷嘴。
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公开(公告)号:KR1020120083841A
公开(公告)日:2012-07-26
申请号:KR1020110127651
申请日:2011-12-01
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/68728 , B08B3/04 , B08B3/041 , H01L21/67017 , H01L21/67051 , H01L21/6719 , H01L21/68742
Abstract: PURPOSE: A liquid processing apparatus and liquid processing method are provided to remove pollution on a nozzle support arm by setting an arm cleaner. CONSTITUTION: A substrate maintaining unit(21) and cup(40) are installed in a processing chamber(20). The cup is arranged around the substrate maintain unit. A nozzle(82a) supplies liquid to the substrate installed on the substrate maintaining unit. A nozzle support arm(82) supports the nozzle. An arm cleaner(88) cleans the nozzle support arm.
Abstract translation: 目的:提供液体处理设备和液体处理方法,通过设置手臂清洁器来消除喷嘴支撑臂上的污染。 构成:衬底保持单元(21)和杯(40)安装在处理室(20)中。 杯子围绕衬底维护单元布置。 喷嘴(82a)向安装在基板保持单元上的基板供给液体。 喷嘴支撑臂(82)支撑喷嘴。 手臂清洁器(88)清洁喷嘴支撑臂。
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