公开(公告)号：EP1712514A3

公开(公告)日：2011-06-15

申请号：EP06075736.6

申请日：2006-03-29

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81C1/00

CPC classification number: B81B3/001

Abstract: A technique (600) for forming anti-stiction bumps on a bottom surface of a micro-electro mechanical (MEM) structure includes a number of process steps. The MEM structure is fabricated from an assembly that includes a support substrate bonded to a single-crystal semiconductor layer, via an insulator layer. A plurality of holes are formed through the single-crystal semiconductor layer to the insulator layer on an interior portion of a defined movable structure (602). A portion of the insulator layer underneath the holes is removed (604). The holes are then filled with a conformal film that extends below a lower surface of the defined movable structure to provide a plurality of anti-stiction bumps (606). A trench is then formed through the single-crystal semiconductor layer to the insulator layer to form the defined movable structure (608). Finally, a remainder of the insulator layer underneath the defined movable structure is removed to free the defined movable structure (610).

Abstract translation: 用于在微机电（MEM）结构的底表面上形成抗静电凸块的技术（600）包括多个工艺步骤。 MEM结构由包括通过绝缘体层结合到单晶半导体层的支撑衬底的组件制成。 多个孔通过单晶半导体层形成在限定的可移动结构（602）的内部的绝缘体层上。 除去孔下面的绝缘体层的一部分（604）。 孔然后用保形膜填充，该保形膜在限定的可移动结构的下表面下方延伸，以提供多个抗静电凸块（606）。 然后通过单晶半导体层形成沟槽到绝缘体层以形成限定的可移动结构（608）。 最后，除去限定的可移动结构之下的绝缘体层的剩余部分以释放限定的可移动结构（610）。

公开(公告)号：EP2083246A1

公开(公告)日：2009-07-29

申请号：EP09150251.8

申请日：2009-01-08

Applicant: Delphi Technologies, Inc.

Inventor： Zarabadi, Seyed R. ,  Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Johnson, Jack D.

IPC: G01C19/56

CPC classification number: G01C19/5684

Abstract: A motion sensor in the form of an angular rate sensor (10) and a method of making a sensor are provided and includes a support substrate (12) and a silicon sensing ring (14) supported by the substrate and having a flexural resonance.
Drive electrodes (20A) apply electrostatic force on the ring (14) to cause the ring to resonate. Sensing electrodes (20B) sense a change in capacitance indicative of vibration modes of resonance of the ring (14) so as to sense motion. A plurality of silicon support rings (16) connect the substrate (12) to the ring (14). The support springs (16) have portions (B1 and B2) are located at an angle to substantially match a modulus of elasticity of the silicon, such as about 22.5° and 67.5°, with respect to the crystalline orientation of the silicon. Also disclosed is a method of making a silicon integrated sensor.

Abstract translation: 提供角速率传感器（10）形式的运动传感器和制造传感器的方法，并且包括支撑衬底（12）和由衬底支撑并且具有弯曲共振的硅感测环（14）。 驱动电极（20A）在环（14）上施加静电力使环产生共振。 感测电极（20B）感测指示环（14）的谐振的振动模式的电容的变化，以便感测运动。 多个硅支撑环（16）将衬底（12）连接到环（14）。 支撑弹簧（16）具有部分（B1和B2）相对于硅的结晶取向以与硅的弹性模量（例如约22.5°和67.5°）基本匹配的角度定位。 还公开了制造硅集成传感器的方法。

公开(公告)号：EP2082989A2

公开(公告)日：2009-07-29

申请号：EP09150363.1

申请日：2009-01-12

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Chilcott, Dan W. ,  Forestal, Richard G. ,  Glenn, Jack L. ,  Zarabadi, Seyed R.

IPC: B81C1/00

CPC classification number: B81C1/00246 ,  B81B3/001 ,  B81B2201/0242 ,  B81C2203/0735

Abstract: A method of making a silicon integrated sensor on an SOI substrate is provided. The method includes the step of providing a substrate having an insulation layer on a top surface, and providing a silicon epitaxial layer on top of the insulation layer. The method also includes the steps of forming a first trench extending through the epitaxial layer and reaching the insulation layer so as to isolate a first portion of the epitaxial layer from a second portion of the epitaxial layer, and disposing a fill material within the first trench. The method also includes the steps of forming one or more electrical components on the first portion of the epitaxial layer, and forming one or more contacts on the second portion of the epitaxial layer. The method further includes the step of forming one or more second trenches in the second portion of the epitaxial layer so as to provide one or more moving element within the second portion of the epitaxial layer, wherein the one or more movable elements serve as sensing element.

Abstract translation: 提供了在SOI衬底上制造硅集成传感器的方法。 该方法包括提供在顶表面上具有绝缘层的衬底以及在绝缘层的顶部上提供硅外延层的步骤。 该方法还包括以下步骤：形成延伸穿过外延层并到达绝缘层的第一沟槽，以将外延层的第一部分与外延层的第二部分隔离，并将填充材料设置在第一沟槽 。 该方法还包括以下步骤：在外延层的第一部分上形成一个或多个电组件，以及在外延层的第二部分上形成一个或多个触点。 该方法还包括在外延层的第二部分中形成一个或多个第二沟槽以在外延层的第二部分内提供一个或多个移动元件的步骤，其中一个或多个可移动元件用作感测元件 。

公开(公告)号：EP1712514A2

公开(公告)日：2006-10-18

申请号：EP06075736.6

申请日：2006-03-29

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81B3/00

CPC classification number: B81B3/001

Abstract: A technique (600) for forming anti-stiction bumps on a bottom surface of a micro-electro mechanical (MEM) structure includes a number of process steps. The MEM structure is fabricated from an assembly that includes a support substrate bonded to a single-crystal semiconductor layer, via an insulator layer. A plurality of holes are formed through the single-crystal semiconductor layer to the insulator layer on an interior portion of a defined movable structure (602). A portion of the insulator layer underneath the holes is removed (604). The holes are then filled with a conformal film that extends below a lower surface of the defined movable structure to provide a plurality of anti-stiction bumps (606). A trench is then formed through the single-crystal semiconductor layer to the insulator layer to form the defined movable structure (608). Finally, a remainder of the insulator layer underneath the defined movable structure is removed to free the defined movable structure (610).

公开(公告)号：EP1333504A2

公开(公告)日：2003-08-06

申请号：EP03075163.0

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chavan, Abhijeet V. ,  Logsdon, James H. ,  Chilcott, Dan W. ,  Lee, Han-Sheng ,  Lambert, David K. ,  Vas, Timothy A.

IPC: H01L35/02 ,  H01L35/08

CPC classification number: G01J5/14 ,  G01J5/12

Abstract: An integrated sensor (10) comprising a thermopile transducer (12) and signal processing circuitry (4) that are combined on a single semiconductor substrate (20), such that the transducer output signal is sampled in close vicinity by the processing circuitry (14). The sensor (10) comprises a frame (18) formed of a semiconductor material that is not heavily doped, and with which a diaphragm (16) is supported. The diaphragm (16) has a first surface for receiving thermal (e.g., infrared) radiation, and comprises multiple layers that include a sensing layer containing at least a pair of interlaced thermopiles (22). Each thermopile (22) comprises a sequence of thermocouples (24), each thermocouple (24) comprising dissimilar electrically-resistive materials that define hot junctions (26) located on the diaphragm (16) and cold junctions (28) located on the frame (18). The signal processing circuitry (14) is located on the frame (18) and electrically interconnected with the thermopiles (22). The thermopiles (22) are interlaced so that the output of one of the thermopiles (22) increases with increasing temperature difference between the hot and cold junctions (26,28) thereof, while the output of the second thermopile (22) decreases with increasing temperature difference between its hot and cold junctions (26,28).

Abstract translation: 包括组合在单个半导体衬底（20）上的热电堆换能器（12）和信号处理电路（4）的集成传感器（10），使得所述换能器输出信号在所述处理电路（14）附近被采样， 。 传感器（10）包括由不重掺杂的半导体材料形成的框架（18），并且支撑有隔膜（16）。 隔膜（16）具有用于接收热（例如，红外线）辐射的第一表面，并且包括包含至少一对隔行热电堆（22）的感测层的多个层。 每个热电堆（22）包括一系列热电偶（24），每个热电偶（24）包括不同的电阻材料，其限定位于隔膜（16）上的热接点（26）和位于框架上的冷接点（28） 18）。 信号处理电路（14）位于框架（18）上并与热电堆（22）电互连。 热电堆（22）交错，使得其中一个热电堆（22）的输出随着热连接点（26,28）之间温差的增加而增加，而第二热电堆（22）的输出随着增加 其热连接点之间的温差（26,28）。

公开(公告)号：EP1398298A3

公开(公告)日：2015-06-24

申请号：EP03077437.6

申请日：2003-08-04

Applicant: Delphi Technologies, Inc.

Inventor： Freeman, John E. ,  Baney, William J. ,  Betzner, Timothy M. ,  Chilcott, Dan W. ,  Christenson, John C. ,  Vas, Timothy A. ,  Queen, George M. ,  Long, Stephen P.

IPC: B81C1/00 ,  H04R19/00 ,  H04R31/00

CPC classification number: H04R31/00 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81C1/00666 ,  H04R19/005 ,  H04R31/006 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/49005

Abstract: A process of forming a capacitive audio transducer (10), preferably having an all-silicon monolithic construction that includes capacitive plates (22,24) defined by doped single-crystal silicon layers (18,62). The capacitive plates (22,24) are defined by etching the single-crystal silicon layers (18,62), and the capacitive gap (30) therebetween is accurately established by wafer bonding, yielding a transducer (10) that can be produced by high-volume manufacturing practices.

公开(公告)号：EP1333504B1

公开(公告)日：2013-04-24

申请号：EP03075163.0

申请日：2003-01-17

Applicant: Delphi Technologies, Inc.

Inventor： Chavan, Abhijeet V. ,  Logsdon, James H. ,  Chilcott, Dan W. ,  Lee, Han-Sheng ,  Lambert, David K. ,  Vas, Timothy A.

IPC: G01J5/12 ,  G01J5/14

CPC classification number: G01J5/14 ,  G01J5/12

公开(公告)号：EP1702884A3

公开(公告)日：2011-01-05

申请号：EP06075521.2

申请日：2006-03-06

Applicant: Delphi Technologies, Inc.

Inventor： Christenson, John C. ,  Zarabadi, Seyed R. ,  Chilcott, Dan W.

IPC: B81B3/00 ,  G01P15/08 ,  G01P15/18 ,  G01P15/125

CPC classification number: B81C1/00047 ,  B81B2201/0235 ,  B81B2203/033 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/082

Abstract: A linear accelerometer (10) is provided having a support substrate (14), fixed electrodes (22A-22D) having fixed capacitive plates (30A-30D), and a movable inertial mass (12) having movable capacitive plates (20A-20D) capacitively coupled to the fixed capacitive plates (30A-30D). Adjacent capacitive plates vary in height. The accelerometer (10) further includes support tethers (16A-16B) for supporting the inertial mass (12) and allowing movement of the inertial mass upon experiencing a linear acceleration along a sensing axis. The accelerometer (10) has inputs (26, 28) and an output (34) for providing an output signal which varies as a function of the capacitive coupling and is indicative of both magnitude and direction of vertical acceleration along the sensing Z-axis. A microsensor fabrication process (100) is also provided which employs a top side mask and etch module (70).

公开(公告)号：EP1770057A3

公开(公告)日：2008-07-16

申请号：EP06076693.8

申请日：2006-09-07

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2203/0127 ,  B81C1/00246 ,  B81C2201/0191 ,  B81C2203/0728

Abstract: A technique (400) for manufacturing a microelectromechanical (MEM) device includes a number of steps. Initially, a first wafer (402) is provided. Next, a bonding layer is formed on a first surface of the first wafer. Then, a portion of the bonding layer is removed to provide a cavity including a plurality of spaced support pedestals within the cavity (404). Next, a second wafer is bonded to at least a portion of the bonding layer (406). A portion of the second wafer provides a diaphragm over the cavity and the support pedestals support the diaphragm during processing. The second wafer is then etched to release the diaphragm from the support pedestals.

公开(公告)号：EP1770056A2

公开(公告)日：2007-04-04

申请号：EP06076692.0

申请日：2006-09-07

Applicant: Delphi Technologies, Inc.

Inventor： Chilcott, Dan W.

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81C1/00531 ,  B81B2203/033 ,  B81C2201/0132 ,  B81C2201/0142

Abstract: A technique (500) for manufacturing a micro-electro-mechanical (MEM) structure includes a number of steps. Initially, a substrate is provided (502). Next, a plurality of trenches are etched into the substrate with a first etch (508). Then, a charging layer is formed at a bottom of each of the trenches to form undercut trenches (510). Finally, a second etch is provided into the undercut trenches. The charging layer causes the second etch to laterally etch foots in the substrate between the undercut trenches (512). The footers undercut the substrate to release a portion of the substrate for providing a movable structure between the undercut trenches and above the footers.

Abstract translation: 用于制造微机电（MEM）结构的技术（500）包括多个步骤。 首先，提供基板（502）。 接下来，通过第一蚀刻（508）将多个沟槽蚀刻到衬底中。 然后，在每个沟槽的底部形成充电层以形成底切槽（510）。 最后，在底切沟槽中提供第二蚀刻。 充电层使得第二蚀刻在底切沟槽（512）之间横向蚀刻衬底中的脚。 底脚底切基板以释放基板的一部分，以在底切沟槽和页脚之上提供可移动结构。