公开(公告)号：DE10229231A1

公开(公告)日：2004-01-15

申请号：DE10229231

申请日：2002-06-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ZULL HERIBERT ,  STEIN WILHELM

IPC: H01L31/0236 ,  H01L33/22 ,  H01L33/00 ,  B81C1/00 ,  H01L31/0232

Abstract: Radiation-emitting and/or -receiving semiconductor chip (1) has a radiation coupling and/or decoupling microstructure arranged in a material layer of the semiconductor chip using a mask material which dampens the material layer so that it forms a number of partially cross-linked islands (280) separated from each other.

公开(公告)号：WO2004030108A2

公开(公告)日：2004-04-08

申请号：PCT/DE0303147

申请日：2003-09-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  PLOESSL ANDREAS ,  STEIN WILHELM

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  PLOESSL ANDREAS ,  STEIN WILHELM

IPC: H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC classification number: H01L33/32 ,  H01L33/405

Abstract: Disclosed is a radiation-emitting semiconductor component comprising a layered structure (12) which is provided with a photon-emitting active layer (16), an n-doped cladding layer (14), and a p-doped cladding layer (18), a contact that is connected to the n-doped cladding layer (14), and a reflector layer (20) that is connected to the p-doped cladding layer (18). The inventive reflector layer (20) is formed by an alloy of silver and one or several metals of the group comprising Ru, Rh, Pd, Au, Os, Ir, Pt, Cu, Ti, Ta, and Cr.

Abstract translation: 在具有层结构（12），包括一个光子的发光有源层（16），n型掺杂包层（14）和p掺杂的包覆层（18），与所述n型掺杂的包层发射辐射的半导体部件（14） 连接接触，并与连接到反射镜层（20）p型掺杂的包覆层（18）是根据本发明的由银的与该组钌，铑，钯，金，锇的一种或多种金属的合金的反射层（20） ，铜铱，铂，形成Ti，Ta和铬。

公开(公告)号：WO2005117070A3

公开(公告)日：2006-05-11

申请号：PCT/DE2005000791

申请日：2005-04-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  STEIN WILHELM ,  ALBRECHT TONY ,  BRICK PETER

Inventor： STEIN WILHELM ,  ALBRECHT TONY ,  BRICK PETER

IPC: H01S5/042 ,  H01L21/00 ,  H01S3/109 ,  H01S5/02 ,  H01S5/14 ,  H01S5/183

CPC classification number: H01S5/18394 ,  H01S3/109 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/141 ,  H01S5/18355 ,  H01S5/18386 ,  H01S2301/18

Abstract: Disclosed is a surface-emitting semiconductor laser component, especially an electrically pumped semiconductor laser component, which features emission in a vertical direction and is used for generating laser radiation by means of an external optical resonator (4,5). Said semiconductor laser component comprises a semiconductor element with a sequence (2) of semiconductor layers which is provided with a lateral main direction of extension and an active zone (3) used for generating radiation. A radiation-permeable contact layer (6) is disposed within the resonator and is connected to the semiconductor element in an electrically conducting manner.

Abstract translation: 它是一种表面发射半导体激光器元件，特别是电泵浦半导体激光装置，具有垂直发射方向，这是由一个外部光谐振器（4,5）的装置，提供了一种用于激光辐射的产生，包括：具有半导体层序列的半导体主体（2）所示 具有延伸的横向主方向和提供用于产生辐射活性区（3）被布置在所述腔内的透射辐射的接触层（6）和电连接到所述半导体基体。

公开(公告)号：DE102004061865A1

公开(公告)日：2006-03-30

申请号：DE102004061865

申请日：2004-12-22

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  STEIN WILHELM

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/40

Abstract: Manufacturing methods for a thin-film semiconductor chip based on a III/V-III/V semiconductor compound material and capable of generating electromagnetic radiation. In one method, a succession of active layers is applied to a growth substrate. Applied to the reverse side of the active layers is a dielectric layer. Laser energy is introduced into a defined volumetric section of the dielectric layer to form an opening. Subsequently, a metallic layer is applied to form a succession of reflective layers, to fill the opening with metallic material and to create a reverse-side electrically conductive contact point to the reverse side of the succession of active layers. Pursuant to another method, a succession of reflective layers is applied to the active layers and laser energy is applied to a volumetric section of the reflective layers, to create a reverse-side electrically conductive contact point.

公开(公告)号：DE10329364A1

公开(公告)日：2005-02-03

申请号：DE10329364

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： JUNG CHRISTIAN ,  STEIN WILHELM

IPC: H01L21/285 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00

Abstract: Electrical contact comprises a mirror layer containing a layer (2) made from a gold-germanium alloy and a gold layer (3), a barrier layer (4) made from material deposited by thermal vaporization and a solder layer (7). An independent claim is also included for a process for the production of the electrical contact.

公开(公告)号：DE102004029412A1

公开(公告)日：2005-10-13

申请号：DE102004029412

申请日：2004-06-18

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ZEISEL ROLAND ,  VOELKL JOHANNES ,  WALTER ROBERT ,  KUS OLIVER

IPC: H01L33/44 ,  H01L33/00

公开(公告)号：DE10329398A1

公开(公告)日：2005-02-03

申请号：DE10329398

申请日：2003-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ZOELFL MICHAEL ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00

Abstract: Radiation-emitting semiconductor chip (1) comprises a brightness adjusting layer (12) arranged between a connecting region (4) and a current injection region (5) on a radiation coupling surface (10) of a semiconductor layer sequence (3) to absorb a part of the radiation produced in the semiconductor layer sequence. Independent claims are also included for: (a) process for adjusting the brightness of a radiation-emitting semiconductor chip; and (b) process for the production of a semiconductor chip.

公开(公告)号：DE10350707A1

公开(公告)日：2004-11-11

申请号：DE10350707

申请日：2003-10-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  FEHRER MICHAEL ,  BAUR JOHANNES ,  WINTER MATTHIAS ,  PLOESL ANDREAS ,  KAISER STEPHAN ,  HAHN BERTHOLD ,  EBERHARD FRANZ

IPC: H01L31/0224 ,  H01L33/32 ,  H01L33/40 ,  H01S5/02 ,  H01S5/323 ,  H01L33/00

Abstract: The electrical contact of optoelectronic semiconductor chip (1) has a mirror layer (2), a protective layer (3), a barrier layer (4), an adhesion medium layer (5) and a solder layer (8). The mirror layer contains metal or metal alloy. The protective layer reduces corrosion of mirror layer. The mirror layer contains silver, aluminum or platinum. The protective layer contains titanium or platinum. The barrier layer contains titanium-tungsten nitride (TiW (N)). The adhesion medium layer contains titanium. An independent claim is included for manufacture electrical contact.

公开(公告)号：DE10261364A1

公开(公告)日：2004-08-19

申请号：DE10261364

申请日：2002-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  JANES STEFAN ,  HEINDL ALEXANDER ,  PLOESL ANDREAS ,  WEGLEITER WALTER

IPC: H01L21/283 ,  H01L21/285 ,  H01L33/00

Abstract: Deposition of a temperable multilayer contact coating, especially a tempered multilayer contact metallizing onto a semiconductor material by the steps: application of a masking layer to the semiconductor, formation of a window in the masking layer, application of a contact metal layer to the semiconductor, application of an external layer and/or a barrier layer on or above the contact metal layer (4), and removal of the contact metal on the masking layer.

公开(公告)号：DE10244986A1

公开(公告)日：2004-04-08

申请号：DE10244986

申请日：2002-09-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  FEHRER MICHAEL ,  HAERLE VOLKER ,  BADER STEFAN ,  STEIN WILHELM ,  KAISER STEPHAN

IPC: H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01S5/028 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises a semiconductor body (1) having an active zone (2), a structured contact layer (3) arranged on the surface of the semiconductor body, and intermediate chambers (4) provided over the contact layer to form free surfaces (5) on the surface which are not covered by the contact layer. The free surfaces are covered by a mirror (6).