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公开(公告)号:SG115769A1
公开(公告)日:2005-10-28
申请号:SG200501615
申请日:2005-03-17
Applicant: ASML NETHERLANDS BV
Inventor: VOORMA HARM-JAN , VAN DIJSSELDONK ANTONIUS JOHAN , MICKAN UWE
IPC: H01L21/027 , G03F7/20
Abstract: A lithographic apparatus includes an illumination system for providing a projection beam of radiation, a support structure for supporting patterning structure for imparting a pattern to the projection beam, a substrate table for holding a wafer and a projection system for projecting the patterned beam onto a target portion of the wafer. In order to permit control of the radiation dose at the wafer so that the throughput of wafers can be optimised, a variable attenuator A is provided to vary the intensity of the projection beam while not changing the position of the beam. The variable attenuator A comprises two parallel mirrors 21 and 22 positioned such that an input beam of radiation is incident on a first of the mirrors 21 by which it is reflected towards a second of the mirrors 22 by which the beam is reflected to produce an output beam of radiation of required intensity for input to the illumination system, and a tilting mechanism for tilting the mirrors 21 and 22 such that the mirrors 21 and 22 remain parallel to one another and the angles of incidence of the beams on the mirrors 21 and 22 are changed so as to vary the intensity of the output beam. This allows the intensity of the projection beam to be varied continuously without changing the position of the beam, whether the input beam is converging, diverging or parallel.
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公开(公告)号:DE60321883D1
公开(公告)日:2008-08-14
申请号:DE60321883
申请日:2003-11-25
Applicant: ASML NETHERLANDS BV
Inventor: LOWISCH MARTIN , DIERICHS MARCEL MATHIJS THEODO , VAN INGEN SCHENAU KOEN , VAN DER LAAN HANS , LEENDERS MARTINUS HENDRIKUS AN , MCGOO ELAINE , MICKAN UWE
IPC: G03F7/20 , G03F1/24 , G03F7/22 , G03F9/02 , H01L21/027
Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z 5 astigmatism, Z 9 spherical, and Z 12 astigmatism.
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公开(公告)号:SG136134A1
公开(公告)日:2007-10-29
申请号:SG2007066608
申请日:2004-08-23
Applicant: ASML NETHERLANDS BV
Inventor: LOOPSTRA ERIK ROELOF , DIERICHS MARCEL MATHIJS THEODO , JASPER JOHANNES CHRISTIAAN MAR , MEIJER HENDRICUS JOHANNE MARIA , MICKAN UWE , MULKENS JOHANNES CATHARINUS HU , LIPSON MATHEW , UITTERDIJK TAMMO , BASELMANS JOHANNES JACOBUS MAT
IPC: G03F7/20
Abstract: A lithographic projection apparatus is disclosed for use with an immersion liquid positioned between the final element of the projection system and the substrate W. Several methods are disclosed for protecting components of the projection system, substrate table and a liquid confinement system. These include providing a protective coating on the final element 20 of the projection system as well as providing sacrificial bodies upstream of the components. A two component final optical element of CaF 2 is also disclosed.
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公开(公告)号:SG173309A1
公开(公告)日:2011-08-29
申请号:SG2011034329
申请日:2004-08-23
Applicant: ASML NETHERLANDS BV
Inventor: LOOPSTRA ERIK ROELOF , DIERICHS MARCEL MATHIJS THEODORE MARIE , JASPER JOHANNES CHRISTIAAN MARIA , MEIJER HENDRICUS JOHANNE MARIA , MICKAN UWE , MULKENS JOHANNES CATHARINUS HUBERTUS , LIPSON MATHEW , UITTERDIJK TAMMO , BASELMANS JOHANNES JACOBUS MATHEUS
IPC: G03F7/20
Abstract: 225A lithographic projection apparatus is disclosed for use with an immersion liquid positioned between the final element of the projection system and the substrate W. Several methods are disclosed for protecting components of the projection system, substrate table anda liquid confinement system. These include providing a protective coating on the final10 element 20 of the projection system as well as providing sacrificial bodies upstream of the components. A two component final optical element of CaF2 is also disclosed.[Fig No. 61115
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公开(公告)号:NL2003751A
公开(公告)日:2010-06-15
申请号:NL2003751
申请日:2009-11-04
Applicant: ASML NETHERLANDS BV
Inventor: VRIES GOSSE , BUIS EDWIN , MICKAN UWE
Abstract: An actuator system is provided that is configured to move a component relative to a base of the actuator system. The actuator system may include first and second actuating elements, each including two sections of material that are joined to each other and have different coefficients of thermal expansion. The two actuating elements may be configured such that if the temperature of one is increased it applies a force on the component in a direction that is opposite to the force applied by the other actuating element if its temperature is increased. The actuator system may further include at least one power supply configured to provide independently controllable heating to the first and second actuating elements.
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公开(公告)号:SG135931A1
公开(公告)日:2007-10-29
申请号:SG2003068699
申请日:2003-11-24
Applicant: ASML NETHERLANDS BV , ZEISS CARL SMT AG
Inventor: LOWISCH MARTIN , DIERICHS MARCEL MATHIJS THEODO , VAN INGEN SCHENAU KOEN , VAN DER LAAN HANS , LEENDERS MARTINUS HENDRIKUS AN , MCGOO ELAINE , MICKAN UWE
Abstract: System aberrations are effected in a projection system of a lithographic apparatus to optimize imaging of a thick reflective mask with a thick absorber that is obliquely illuminated. The aberrations may include Z5 astigmatism, Z9 spherical, and Z12 astigmatism.
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公开(公告)号:NL2005958A
公开(公告)日:2011-08-10
申请号:NL2005958
申请日:2011-01-06
Applicant: ASML NETHERLANDS BV
Inventor: MICKAN UWE , OOSTEN ANTON
IPC: G03F7/20
Abstract: A lithographic method for irradiating resist on a substrate, the resist filling a region located between a first element located on the substrate, and a second element located on the substrate, the first element having a first length, a first width, and a first height, the second element having a second length, a second width, and a second height, the first height being substantially equal to the second height, the first length being substantially parallel to the second length, and extending in a first direction, a distance between facing sidewalls of the first element and the second element that defines the region filled with resist being less than a wavelength of radiation used to irradiate the resist, the method including irradiating the resist with elliptically polarized radiation, the elliptically polarized radiation being configured such that, at the first height and second height, the elliptically polarized radiation is polarized perpendicular to the first direction, substantially perpendicular to the first and second lengths.
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公开(公告)号:DE602005022957D1
公开(公告)日:2010-09-30
申请号:DE602005022957
申请日:2005-03-21
Applicant: ASML NETHERLANDS BV
Inventor: VOORMA HARM-JAN , VAN DIJSSELDONK ANTONIUS JOHANNES , MICKAN UWE
IPC: G03F7/20 , H01L21/027
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公开(公告)号:SG124407A1
公开(公告)日:2006-08-30
申请号:SG200600565
申请日:2006-01-26
Applicant: ASML NETHERLANDS BV
Inventor: MICKAN UWE , MEIJER HENDRICUS JOHANNES MARI
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30.
公开(公告)号:SG113566A1
公开(公告)日:2005-08-29
申请号:SG200500186
申请日:2005-01-13
Applicant: ASML NETHERLANDS BV
Inventor: MOORS JOHANNES HUBERTUS JOSEPH , FRANKEN JOHANNES CHRISTIAN LEO , MICKAN UWE , VOORMA HARM-JAN
IPC: G02B17/00 , G03F7/20 , H01L21/027
Abstract: A lithographic apparatus comprising an illumination system (IL) for providing a projection beam of radiation (PB), a support structure (MT) for supporting patterning means (MA), the patterning means (MA) serving to impart the projection beam (PB) with a pattern in its cross-section. The apparatus further comprises a substrate table (WT) for holding a substrate (W), a projection system (PL) for projecting the patterned beam onto a target portion of the substrate (W), and a collector (1; 101; 201) which is arranged for transmitting radiation (R), received from a first radiation source (SO), to the illumination system (IL). The apparatus comprises at least a heater (2; 102; 202) for heating the collector (1; 101; 201) when the collector receives substantially no radiation from the first radiation source (SO). The invention further provides a device manufacturing method as well as a device manufactured thereby.
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