公开(公告)号：GB2485493B

公开(公告)日：2014-01-15

申请号：GB201200163

申请日：2010-08-04

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  EDELSTEIN DANIEL C ,  KIM HO-CHEOL ,  KOESTER STEVEN ,  SOLOMON PAUL M ,  HINSBERG WILLIAM

IPC: H01L21/44 ,  H01L21/311 ,  H01L21/768

Abstract: An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.

公开(公告)号：GB2365622A

公开(公告)日：2002-02-20

申请号：GB0103577

申请日：2001-02-14

Applicant: IBM

Inventor： SAMBUCETTI CARLOS J ,  EDELSTEIN DANIEL C ,  GAUDIELLO JOHN G ,  RUBINO JUDITH M ,  WALKER GEORGE

IPC: H05K3/34 ,  C23C18/16 ,  H01L21/60 ,  H01L23/12 ,  H01L23/485 ,  H01L23/532 ,  H05K3/24 ,  H05K13/06

Abstract: A copper pad surface 14 of an IC chip is first prepared, e.g. cleaned by an acid solution, a protection layer 16 of a phosphorus or boron-containing metal alloy is then deposited on the copper pad surface, and then an adhesion layer 18 of a noble metal is deposited on top of the protection layer. The protection layer 16 may be a single layer, or two or more layers intimately joined together formed of a phosphorus or boron-containing metal alloy such as Ni-P, Co-P, Co- W-P, Co-Sn-P, Ni-W-P, Co-B, Ni-B, Co-Sn-B, Co-W-B and Ni-W-B. A suitable thickness for the protection layer is between about 1,000 Ñ and about 10,000 Ñ, and preferably between about 3,000 Ñ and about 7,000 Ñ. The adhesion layer 18 can be formed of a noble metal such as Au, Pt, Pd and Ag to a thickness between about 500 Ñ and about 4,000 Ñ, and preferably between about 1,000 Ñ and about 2,000 Ñ. A nucleation layer of Pd may be deposited between the copper conductive pad surface 14 and the protection layer 16 prior to the electroless deposition of the protection layer. An additional noble metal layer may be deposited on top of the adhesion layer 18 by an electroless Au deposition process to increase the thickness of the final noble metal layer to about 2,000 Ñ 12,000 Ñ, and preferably between about 4,000 Ñ and about 6,000 Ñ. The pad is suitable for a wireband or solder bump connection

公开(公告)号：CA2368950A1

公开(公告)日：2000-11-30

申请号：CA2368950

申请日：2000-05-15

Applicant: IBM

Inventor： MCGAHAY VINCENT ,  NYE HENRY A III ,  OTTEY BRIAN G R ,  EDELSTEIN DANIEL C ,  PRICE WILLIAM H

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532

Abstract: A structure comprising a layer of copper (1), a barrier layer (10), a layer of AlCu (9), and a pad-limiting layer (7), wherein the layer of AlCu and barrie r layer are interposed between the layer of copper and pad-limiting layer.

公开(公告)号：GB2504418B

公开(公告)日：2015-03-11

申请号：GB201319175

申请日：2012-04-04

Applicant: IBM

Inventor： YANG CHIH-CHAO ,  GATES STEPHEN M ,  LI BAOZHEN ,  EDELSTEIN DANIEL C

IPC: H01L23/525

公开(公告)号：DE112010003269T5

公开(公告)日：2013-04-25

申请号：DE112010003269

申请日：2010-08-04

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  EDELSTEIN DANIEL C ,  KOESTER STEVEN ,  SOLOMAN PAUL M ,  HINSBERG WILLIAM D ,  KIM HO-CHEOL

IPC: H01L21/44

Abstract: Es wird eine Kopplung zwischen einer Struktur mit sublithographischem Rasterabstand und einer Struktur mit lithographischem Rasterabstand gebildet. Eine Vielzahl von leitfähigen Linien mit einem sublithographischen Rasterabstand kann lithographisch strukturiert und entlang einer Linie mit einem Winkel von weniger als 45 Grad bezüglich der Längsrichtung der Vielzahl von leitfähigen Linien geschnitten werden. Alternativ kann ein Copolymer, gemischt mit einem Homopolymer, in einem ausgesparten Bereich angeordnet und selbstorganisiert werden, um eine Vielzahl von leitfähigen Linien mit einem sublithographischen Rasterabstand in dem Bereich mit konstanter Breite und einer lithographischen Abmessung zwischen benachbarten Linien in einem trapezförmigen Bereich zu bilden. In einer weiteren Alternative kann eine erste Vielzahl von leitfähigen Linien mit dem sublithographischen Rasterabstand und eine zweite Vielzahl von leitfähigen Linien mit dem lithographischen Rasterabstand auf der gleichen oder einer anderen Ebene gebildet werden.

公开(公告)号：GB2485493A

公开(公告)日：2012-05-16

申请号：GB201200163

申请日：2010-08-04

Applicant: IBM

Inventor： BANGSARUNTIP SARUNYA ,  EDELSTEIN DANIEL C ,  KIM HO-CHEOL ,  KOESTER STEVEN ,  SOLOMON PAUL M ,  HINSBERG WILLIAM

IPC: H01L21/311 ,  H01L21/44 ,  H01L21/768

Abstract: An interconnection between a sublithographic-pitched structure and a lithographic pitched structure is formed. A plurality of conductive lines having a sublithographic pitch may be lithographically patterned and cut along a line at an angle less than 45 degrees from the lengthwise direction of the plurality of conductive lines. Alternately, a copolymer mixed with homopolymer may be placed into a recessed area and self-aligned to form a plurality of conductive lines having a sublithographic pitch in the constant width region and a lithographic dimension between adjacent lines at a trapezoidal region. Yet alternately, a first plurality of conductive lines with the sublithographic pitch and a second plurality of conductive lines with the lithographic pitch may be formed at the same level or at different.

公开(公告)号：MY134065A

公开(公告)日：2007-11-30

申请号：MYPI20022744

申请日：2002-07-19

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： CONTI RICHARD A ,  EDELSTEIN DANIEL C ,  LEE GILL Y

IPC: H01L21/31 ,  C23C16/40 ,  H01L21/768 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: A METHOD IS DESCRIBED FOR FORMING A LOW-K DIELECTRIC FILM, IN PARTICULAR, A PRE-METAL DIELECTRIC (PMD) ON A SEMICONDUCTOR WAFER WHICH HAS GOOD GAP-FILLING CHARACTERISTICS. THE METHOD USES A THERMAL SUB-ATMOSPHERIC CVD PROCESS THAT INCLUDES A CARBON-CONTAINING ORGANOMETALLIC PRECUSOR SUCH AS TMCTS OR OMCTS, AN OZONE-CONTAINING GAS, AND A SOURCE OF DOPANTS FOR GETTERING ALKALI ELEMENTS AND FOR LOWERING THE REFLOW TEMPERATURE OF THE DIELECTRIC WHILE ATTAINING THE DESIRED LOW-K AND GAPFILLING PROPERTIES OF THE DIELECTRIC FILM. PHOSPHOROUS IS A PREFERRED DOPANT FOR GETTERING ALKALI ELEMENT SUCH AS SODIUM. ADDITIONAL DOPANTS FOR LOWERING THE REFLOW TEMPERATURE INCLUDE, BUT ARE NOT LIMITED TO BORON, GERMANIUM, ARSENIC, FLUORINE OR COMBINATIONS THEREOF.(FIG 3)

公开(公告)号：MY119885A

公开(公告)日：2005-07-29

申请号：MYPI20010427

申请日：2001-01-31

Applicant: IBM

Inventor： SAMBUCETTI CARLOS J ,  EDELSTEIN DANIEL C ,  GAUDIELLO JOHN G ,  RUBINO JUDITH M ,  WALKER GEORGE

IPC: B32B15/00 ,  H05K3/34 ,  B05D5/12 ,  C23C18/16 ,  H01L21/60 ,  H01L23/12 ,  H01L23/485 ,  H01L23/532 ,  H05K3/24 ,  H05K13/06

Abstract: A METHOD FOR PREPARING A COPPER PAD SURFACE FOR ELECTRICAL CONNECTION THAT HAS SUPERIOR DIFFUSION BARRIER AND ADHESION PROPERTIES IS PROVIDED. IN THE METHOD, A COPPER PAD SURFACE (14) IS FIRST PROVIDED THAT HAS BEEN CLEANED BY AN ACID SOLUTION, A PROTECTION LAYER (16) OF A PHOSPHORUS OR BORON-CONTAINING METAL ALLOY IS THEN DEPOSITED ON THE COPPER PAD SURFACE, AND THEN AN ADHESION LAYER (18) OF A NOBLE METAL IS DEPOSITED ON TOP OF THE PROTECTION LAYER. THE PROTECTION LAYER MAY BE A SINGLE LAYER, OR TWO OR MORE LAYERS INTIMATELY JOINED TOGETHER FORMED OF A PHOSPHORUS OR BORON-CONTAINING METAL ALLOY SUCH AS NI-P, CO-P, CO-W-P, CO-SN-P, NI-W-P, CO-B, NI-B, CO-SN-B, CO-W-B AND NI-W-B TO A THICKNESS BETWEEN ABOUT 1,000 Å AND ABOUT 10,000 Å. THE ADHESION LAYER CAN BE FORMED OF A NOBLE METAL SUCH AS AU, PT, PD AND AG TO A THICKNESS BETWEEN ABOUT 500 Å AND ABOUT 4,000 Å.