公开(公告)号：JP2000298350A

公开(公告)日：2000-10-24

申请号：JP2000065165

申请日：2000-03-09

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  TOMAS I WOROU ,  JULIAN OPITZ ,  DEPIETRO RICHARD A ,  MARGARET C LAWSON ,  ANN MARIE MYUUHAATAA ,  JOSEPH F MANISCALCO ,  MAHAMUUDO EMU HOJISUTE ,  JORDHAMO GEORGE M ,  ITO HIROSHI

IPC: C08F232/00 ,  C08K5/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To obtain a photoresist composition using an acid as a catalyst, capable of forming an image with radiation of 193 nm and capable of forming a photoresist structure having high resolution and high etching resistance by development. SOLUTION: The photoresist composition comprises a combination of a cyclic olefin polymer, a photosensitive acid-generating agent and a substantially transparent bulky hydrophobic additive. The cyclic olefin polymer contains a cyclic olefin unit having a polar functional group which promotes dissolution in an aqueous alkali solution and the cyclic olefin unit having an acid-labile group which inhibits the dissolution in the aqueous alkali solution. The hydrophobic additive is selected from the group comprising a saturated steroid compound, a non-steroid cycloaliphatic compound and a non-steroid polycycloaliphatic compound having an acid-labile bond.

公开(公告)号：AU2003303304A1

公开(公告)日：2004-08-23

申请号：AU2003303304

申请日：2003-09-11

Applicant: IBM

Inventor： WONG RANEE W ,  CHEN KUANG-JUNG ,  VARANASI PUSHKARA RAO ,  ALLEN ROBERT D ,  BROCK PHILLIP ,  HOULE FRANCES ,  SOORIYAKUMARAN RATNAM ,  KHOJASTEH MAHMOUD M

IPC: G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/38

Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

公开(公告)号：DE10009183A1

公开(公告)日：2000-09-28

申请号：DE10009183

申请日：2000-02-26

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  MANISCALCO JOSEPH F ,  LAWSON MARGARET C ,  MEWHERTER ANN MARIE ,  JORDHAMO GEORGE M ,  ALLEN ROBERT D ,  OPITZ JULIANN ,  ITO HIROSHI ,  WALLOW THOMAS I ,  PIETRO RICHARD A DE

IPC: C08F232/00 ,  C08K5/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/11 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027

Abstract: Photoresist composition comprises: (a) a cyclic olefin polymer, (b) a photosensitive acid generating compound and (c) a hydrophobic additive selected from non-steroidal alicyclic and multi-alicyclic components and a saturated steroid component.

公开(公告)号：MY122727A

公开(公告)日：2006-04-29

申请号：MYPI20000522

申请日：2000-02-15

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  MANISCALCO JOSEPH F

IPC: G03F7/213 ,  G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  G03F7/36 ,  G03F7/38

Abstract: ACID-CATALYZED POSITIVE PHOTORESIST COMPOSITIONS WHICH ARE IMAGEABLE WITH 193NM RADIATION AND ARE DEVELOPABLE TO FROM PHOTORESIST STRUCTURE OF HIGH RESOLUTION AND HIGH ETCH RESISTANCE ARE ENABLE BY THE USE OF A COMBINATION OF CYCLIC OLEFIN POLYMER, PHOTOSENSITIVE ACID GENERATOR AND A HYDROPHOBIC NON-STEROIDAL NULTI-ALICYCLIC COMPONENT CONTAINING PLURAL ACID LINKING GROUPS.THE CYCLIC OLEFIN POLYMERS PREFERABLY CONTAIN I) CYCLIC OLEFIN UNITS HAVING POLAR FUNCTIONAL MOIETIES , II) CYCLIC OLEFIN UNITS HAVING ACID LABILE MOIETIES THAT INHIBIT SOLUBILITY IN AQUEOUS ALKALINE SOLUTIONS.

公开(公告)号：AU2003273924A1

公开(公告)日：2004-04-19

申请号：AU2003273924

申请日：2003-08-28

Applicant: IBM

Inventor： VARANASI PUSHKARA RAO ,  NISHIMURA YUKIO ,  KOBAYASHI EIICHI ,  KHOJASTEH MAHMOUD M ,  CHEN KUANG-JUNG

IPC: G03F7/039

Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.