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    Charged particle energy filter
    26.
    发明公开
    Charged particle energy filter 有权
    EnstriefilterfürStrahlen geladener Teilchen

    公开(公告)号：EP2592642A2

    公开(公告)日：2013-05-15

    申请号：EP12191522.7

    申请日：2012-11-07

    Applicant: FEI COMPANY

    Inventor： Parker, William ,  Hughes, Wesley

    IPC: H01J37/305 ,  H01J37/05

    CPC classification number: H01J37/05 ,  H01J37/3056 ,  H01J2237/043 ,  H01J2237/057 ,  H01J2237/1534

    Abstract: A multi-element electrostatic chicane energy filter (300) , with the addition of electrostatic quadrupole and hexapole excitations to the dipole elements (302, 304, 306, 308). A charged particle energy filter according to the present invention with a combination of dipole, quadrupole, and hexapole elements capable of producing a line focus at an aperture (310) reduces space-charge effects and aperture damage. A preferred embodiment allows the filter to act as a conjugate blanking system. The energy filter is capable of narrowing the energy spread to result in a smaller beam.

    Abstract translation: 一种多元件静电截面能量过滤器（300），其中向偶极元件（302,304,306,308）添加静电四极和六极激发。 根据本发明的具有能够在孔（310）处产生线焦点的偶极子，四极和六极元件的组合的带电粒子能量过滤器减少了空间电荷效应和孔径损伤。 优选的实施方案允许过滤器充当共轭体消隐系统。 能量滤波器能够缩小能量扩展以导致较小的光束。

    Blocking member for use in the diffraction plane of a TEM
    27.
    发明公开
    Blocking member for use in the diffraction plane of a TEM 有权
    在einer TEM-Beugungsebene的Block礼品zur Verwendung

    公开(公告)号：EP2400523A1

    公开(公告)日：2011-12-28

    申请号：EP11171115.6

    申请日：2011-06-23

    Applicant: FEI Company

    Inventor： Tiemeijer, Peter ,  Buijsse, Bart

    IPC: H01J37/09 ,  H01J37/26

    CPC classification number: H01J37/263 ,  H01J37/09 ,  H01J2237/043 ,  H01J2237/223 ,  H01J2237/2614 ,  H01J2237/2802

    Abstract: The invention relates to a blocking member to be placed in the diffraction plane of a TEM. It resembles the knife edge used for single sideband imaging, but blocks only electrons deflected over a small angle. As a result the Contrast Transfer Function of the TEM according to this invention will equal that of a single sideband microscope at low frequencies and that of a normal microscope for high frequencies. Preferable the highest frequency blocked by the blocking member is such that a microscope without the blocking member would show a CTF of 0.5.

    Abstract translation: 本发明涉及一种放置在TEM的衍射平面中的阻挡构件。 它类似于用于单边带成像的刀刃，但仅阻挡在小角度偏转的电子。 结果，根据本发明的TEM的对比度传递函数将等于低频下的单边带显微镜的对比度传递函数，以及用于高频的正常显微镜的对比度传递函数。 优选地，阻挡构件阻挡的最高频率使得没有阻挡构件的显微镜将显示为0.5的CTF。

    ION SOURCE HAVING A SHUTTER ASSEMBLY
    28.
    发明申请
    ION SOURCE HAVING A SHUTTER ASSEMBLY 审中-公开
    离子源有快门组件

    公开(公告)号：WO2014062515A1

    公开(公告)日：2014-04-24

    申请号：PCT/US2013/064626

    申请日：2013-10-11

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.

    Inventor： BLAHNIK, Jeffrey Charles ,  WEAVER, William T.

    IPC: H01J27/04 ,  H01J27/08 ,  H01J37/08 ,  H01J37/317 ,  H01J27/02 ,  H01J37/302

    CPC classification number: H01J27/024 ,  H01J27/08 ,  H01J37/08 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/30472 ,  H01J2237/3171

    Abstract: An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.

    Abstract translation: 离子源包括限定电弧室的电弧室壳体。 电弧室壳体具有固定位置的提取板，并且提取板限定多个提取孔。 离子源还包括位于靠近提取板的弧形室外部的快门组件。 快门组件构造成在一个时间间隔期间阻挡多个提取孔中的一个的至少一部分。 离子源与从离子源提取的离子束相关的待处理工件的相对运动结合使得仅使用一个离子源就能在工件上形成二维离子注入图案。

    WAFER-SCANNING ION IMPLANTER HAVING FAST BEAM DEFLECTION APPARATUS FOR BEAM GLITCH RECOVERY
    30.
    发明申请
    WAFER-SCANNING ION IMPLANTER HAVING FAST BEAM DEFLECTION APPARATUS FOR BEAM GLITCH RECOVERY 审中-公开
    具有快速光束偏转装置的波束扫描离子植绒装置用于光束恢复

    公开(公告)号：WO2006084143A2

    公开(公告)日：2006-08-10

    申请号：PCT/US2006/003863

    申请日：2006-02-03

    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT

    IPC: H01J37/317 ,  H01J37/147

    CPC classification number: H01J37/304 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/043 ,  H01J2237/15 ,  H01J2237/1501 ,  H01J2237/20228 ,  H01J2237/3045 ,  H01J2237/30472

    Abstract: An analyzer module of an ion implanter includes beam deflection apparatus adjacent to a resolving opening from which a terminal ion beam portion of an ion beam emanates. In response to a beam deflection voltage of a first value of substantially zero volts in a first operating condition, the beam deflection apparatus directs a source ion beam portion of the ion beam toward the resolving opening to generate the terminal ion beam portion. When the beam deflection voltage has a high second value in a second operating condition, the beam deflection apparatus directs the species of the source ion beam portion away from the resolving opening such that the terminal ion beam portion is substantially extinguished. Beam control circuitry is operative during the second operating condition to transition the ion implanter to the first operating condition by rapidly switching the beam deflection voltage from the second value to the first value. An implantation method employs the features of the implanter to recover from glitches during implantation and thereby improve the yield of implanted wafers.

    Abstract translation: 离子注入机的分析器模块包括与分离开口相邻的光束偏转装置，离子束的末端离子束部分从该分离开口发射。 响应于在第一操作条件下基本为零伏的第一值的光束偏转电压，光束偏转装置将离子束的源离子束部分引向分辨开口以产生端子离子束部分。 当光束偏转电压在第二操作条件下具有高的第二值时，光束偏转装置引导源离子束部分的种类远离分辨开口，使得末端离子束部分基本上熄灭。 光束控制电路在第二操作条件期间操作，以通过将光束偏转电压从第二值快速切换到第一值来将离子注入机转换到第一操作状态。 植入方法采用注入机的特征从植入期间的毛刺恢复，从而提高植入晶片的产量。

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